A capillary flow printing technique can be used to fabricate printed carbon nanotube thin-film transistors with submicrometre channel lengths on rigid or flexible substrates.

A six-stack hybrid complementary transistor technology that uses n-type indium oxide and a p-type organic semiconductor as channel materials can be used to build inverters that exhibit a gain of 94.84 V V⁻¹ and a power consumption of 0.47 µW.

A three-dimensional tin halide perovskite can be stabilized by incorporating methylammonium chloride into the perovskite structure and used to create p-type thin-film transistors with a hole mobility of over 80 cm² V⁻¹ s⁻¹.

A 64-kb non-volatile digital compute-in-memory macro that is based on 40-nm spin-transfer torque magnetic random-access memory technology can achieve a software-equivalent inference accuracy for a residual network at 8-bit precision and physics-informed neural networks at 16-bit precision.

An asymmetric double-layer C-shaped diode chain structure that can adjust the local electromagnetic field distribution can be used to create a terahertz device with a frequency doubling efficiency of 38%.

An analogue matrix solver that combines low-precision matrix inversion and high-precision matrix–vector multiplication can be used to solve inversion problems involving 16 × 16 real-valued matrices with precision comparable to 32-bit floating point.

The development of electronic capsules that can monitor biochemical markers and redox balance in the gastrointestinal tract is helping to expand the capabilities of ingestible electronics.

Photodetectors based on emerging semiconductors such as quantum dots and perovskites have been under development for over two decades, but the use of diverse characterization methods and set-ups make it increasingly difficult to compare device performance. A more standardized approach to external quantum efficiency characterization is now essential.