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Photoelectrochemical solar cells using electrodeposited GaAs and AlSb semiconductor films

  • Special Issue On Energy Resources Through Photoelectrochemical Routes
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Abstract

Electrodeposited GaAs and AlSb thin film semiconductors were prepared under various deposition conditions. Reasonable stoichiometry could be attained as revealed by EDAX studies. The best stoichiometry was obtained are Ga1·04As0·96 and Al1·12Sb0·88. The band gap of the GaAs and AlSb films was ∼1·5 eV and 1·6 eV respectively. The electrochemical and photoelectrochemical studies on these films are reported with different redox-couples in aqueous and non-aqueous medium.

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Authors and Affiliations

  1. Department of Physics, Banaras Hindu University, 221 005, Varanas, India

    S Chandra, N Khare & H M Upadhyaya

Authors
  1. S Chandra
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  2. N Khare
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  3. H M Upadhyaya
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Chandra, S., Khare, N. & Upadhyaya, H.M. Photoelectrochemical solar cells using electrodeposited GaAs and AlSb semiconductor films. Bull. Mater. Sci. 10, 323–332 (1988). https://doi.org/10.1007/BF02744303

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  • DOI: https://doi.org/10.1007/BF02744303

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