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Michael Shur

Rensselaer Polytechnic Institute, Electrical, Computer and System Engineering, Faculty Member

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Engineer, physicist and entrepreuner

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School of the Art Institute of Chicago

Julita Vassileva

University of Saskatchewan

Duke University

Maria Cristina La Rocca

Università degli Studi di Padova

Armando Marques-Guedes

UNL - New University of Lisbon

University of Florida

Graduate Center of the City University of New York

José Manuel Santos

University of Salamanca

Pedro de Andres

CSIC (Consejo Superior de Investigaciones Científicas-Spanish National Research Council)

Jonathan D Maltz

Stanford University

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Videos by Michael Shur

Michael Shur co-Founder, Vice-President and Chief Technology Officer of Electronics of the Future, Inc.

Cyber security affects literally every computer user. A multibillion world-wide industry is tryin... more Cyber security affects literally every computer user. A multibillion world-wide industry is trying to solve this growing and very dangerous problem. And all these efforts are focused on fighting malicious software. However, the malicious hardware is even more of a threat and much harder to detect. Our company - Electronics of the Future, Inc. - has developed technology and a family of products to detect the malicious hardware. Electronics of the Future is using terahertz scanning technology and Artificial Intelligence to detect genuine and faked integrated circuits.

6 views

Papers by Michael Shur

Graphene plasmonic heterostructures for terahertz device applications

2014 International Conference Laser Optics, 2014

Simulation and Modeling of Compound Semiconductor Devices

Selected Topics in Electronics and Systems, 1996

ABSTRACT

Non-Ideal Current Transport in Heterostructure Field Effect Transistors

International Journal of High Speed Electronics and Systems, 2008

We describe a new analytical model of a Heterostructure Field Effect Transistors (HFETs) that acc... more We describe a new analytical model of a Heterostructure Field Effect Transistors (HFETs) that accounts for electron trapping in the gate-drain spacing of the device and for related non-ideal device behavior. Under conditions of a very strong trapping, the electron velocity saturates outside the gate, in the trapping region, and the negative trapped charge leads to relatively large differential output conductance at the drain voltages exceeding the knee voltage. Also under the conditions of severe trapping, the negative trapped charge leads to the positive offset of the output current-voltage (I-V) characteristic. The model describes quite well numerous experimental data for passivated and unpassivated AlGaN / GaN HFETs with and without field plates (FP) under different bias conditions.

Complementary heterostructure insulated gate field effect transistors (HIGFETs)

1985 International Electron Devices Meeting, 1985

ABSTRACT

Gallium Arsenide versus Silicon — Applications and Modelling

Semiconductor Device Modelling, 1989

Silicon is the most important material for semiconductor electronics. Silicon devices and integra... more Silicon is the most important material for semiconductor electronics. Silicon devices and integrated circuits are dominant in most applications -- from consumer electronics to computers, from automotive electronics to sensors and imagers. However, in certain areas, silicon is being challenged by other semiconductor materials, such as gallium arsenide and related compounds. Gallium arsenide devices and monolithic microwave integrated circuits excel in ultra-high frequency applications. Gallium arsenide digital integrated circuits have emerged as leading contenders for ultrahigh speed applications in the next generation of supercomputers and communication equipment. These new technologies are located much earlier on the learning curve and their relative importance is expected to increase sharply in the near future.

Color rendition engineering of phosphor-converted light-emitting diodes

Optics Express, 2013

We present an approach to the optimization of the trichromatic spectral power distributions (SPDs... more We present an approach to the optimization of the trichromatic spectral power distributions (SPDs) of phosphor-converted (p-c) lightemitting diodes (LEDs) in respect of each of four different color rendition properties (high color fidelity, color saturating, color dulling, and color preference). The approach is based on selecting a model family of Eu 2+ phosphors and finding the optimal peak wavelengths of the phosphor bands as functions of the luminous efficacy of radiation. A blue component due to either phosphor photoluminescence or InGaN electroluminescence with the peak wavelength at about 460 nm was found to be an optimal one for the high-fidelity, color-dulling, and color-preference LEDs. The high-fidelity and color-preference LEDs need red phosphors with the peak wavelength of 610-615 nm. The high-fidelity LEDs were shown to require a true green (~530 nm) phosphor component, whereas a cyan (~510 nm) component is the prerequisite of the color-saturating and color-preference LEDs. Deepblue (~445 nm) and deep-red (~625 nm) components are required for the color-saturating LEDs. A broad yellow band similar to that of Ce 3+ emission is to be used in the color-dulling LEDs. The SPDs of practical phosphor blends for the high-fidelity, color-saturating, and color-preference p-c LEDs are demonstrated.

Physics of GaN devices (Keynote Address)

SPIE Proceedings, 2005

ABSTRACT

Symposium D: Advanced Materials and Devices for Large-Area Electronics

GaN-based electronic devices

Solid-State Electronics, 1999

We review the parameters and performance of GaN-based pyroelectric and piezoelectric sensors and ... more We review the parameters and performance of GaN-based pyroelectric and piezoelectric sensors and report on the characteristics of GaN-based High Electron Mobility Transistors (HEMTs) grown on 4H-SiC substrates. The piezoelectric and pyroelectric devices can operate at elevated temperatures, where conventional pyroelectric materials have poor characteristics or even lose pyroelectric properties. The transistors grown on insulating 4H-SiC substrates have a much smaller thermal impedance, exhibit less severe self-heating eects, lower noise, and their microwave performance is less sensitive to a temperature increase than for similar devices on sapphire substrates.

Field effect transistor modeling issues

Physica Scripta, 1997

ABSTRACT

Conductance of small semiconductor devices

Microelectronics Journal, 1984

We calculate low field conductivity and mobility as a function of a sample length for small semic... more We calculate low field conductivity and mobility as a function of a sample length for small semiconductor samples. When the sample length is much smaller than the mean free path the current density is proportional to the applied voltage so that the apparent low field mobility is proportional to the device length. Calculation of the apparent low field mobility for high mobility GaAs devices shows that the size effects may be important for sample lengths smaller than 2 ~m.

Capacitance-voltage characteristics of amorphous silicon thin-film transistors

Journal of Applied Physics, 1989

We present the results of experimental and theoretical studies of capacitance-voltage characteris... more We present the results of experimental and theoretical studies of capacitance-voltage characteristics of amorphous silicon thin-film transistors. The small-signal capacitances are calculated as derivatives of channel charge with respect to terminal voltages. The induced charge is evaluated using the same charge-control model for an amorphous silicon thin-film transistor as we used to calculate the current-voltage characteristics of this device. The calculated dependences of capacitances on bias voltages are in good agreement with our experimental data. The capacitance-voltage model is suitable for incorporation into a circuit simulator and can be used for computer-aided design of a-Si integrated circuits.

1/F Noise in Pentacene Organic Thin Film Transistors

Journal of Applied Physics, 2000

We report on the flicker (1/f ) noise in pentacene organic thin film transistors (TFTs) of differ... more We report on the flicker (1/f ) noise in pentacene organic thin film transistors (TFTs) of different designs. Our studies show that the TFT design affects the noise level and the noise dependence on the gate- and drain-source biases. The measured noise level was the lowest for the TFTs with a top source and drain contacts design. For these devices, the noise dependence at low drain current values resembled that for n-type crystalline Si metal–oxide–semiconductor field-effect transistors. The extracted Hooge parameter α, which allows comparing the noise level in different devices and materials, was 0.045 for the top-contact TFTs. This parameter value is several orders of magnitude lower than that for conducting polymers and only several times higher than that for hydrogenated amorphous Si (α-Si:H) TFTs. The bottom source and drain contacts TFTs had a much higher noise level with a noise dependence on the terminal voltages that differed from the noise voltage dependence for the top-co...

Plasmonic terahertz detector response at high intensities

Journal of Applied Physics, 2012

Recent work on plasmonic terahertz detection using field effect transistors (FETs) has yielded de... more Recent work on plasmonic terahertz detection using field effect transistors (FETs) has yielded detectors with high responsivity. Therefore, deviation from small signal mode of operation, when the detector signal is simply proportional to the THz intensity, must be considered. This work presents a new analytical model to predict terahertz response in a FET at arbitrary intensity levels. The proposed analytical model was experimentally validated using a 0.13 μm InGaAs high electron mobility transistor and optically pumped CO2 gas laser operating at 1.63 THz of varying output intensities. The model is suitable for implementation in circuit simulators and might be used for device optimization and THz circuit design.

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

Journal of Applied Physics, 2009

The analysis of experimental data following the McWhorter model for the low frequency noise in am... more The analysis of experimental data following the McWhorter model for the low frequency noise in amorphous Si thin film transistors (TFTs) with SiNx gate dielectric revealed relatively low density of traps Nt≈1019 (cm3 eV)−1. This value is close to the lower limit ever reported for amorphous and polycrystalline Si TFTs. Trap density only slightly increases with the increase of the gate voltage, i.e., approaching the conduction band edge.

Enhanced CAD model for gate leakage current in heterostructure field effect transistors

IEEE Transactions on Electron Devices, 1996

A simple and accurate circuit model for Heterostructure Field Effect Transistors (HFET's) is prop... more A simple and accurate circuit model for Heterostructure Field Effect Transistors (HFET's) is proposed to simulate both the gate and the drain current characteristics accounting for hot-electron effects on gate current and the effect of the gate current on the channel current. An analytical equation that describes the effective electron temperature is developed in a simple form. This equation is suitable for implementation in circuit simulators. The model describes both the drain and gate currents at high gate bias voltages. It has been implemented in our circuit simulator AIM-Spice, and good agreement between simulated and measured results is achieved for enhancementmode HFET's ffabricated in different laboratories. The proposed equivalent circuit and model equations are applicable to other compound semiconductor FET's, i.e., GaAs MESFET's. I. INTRODUCTION ECENTLX, Heterostnicture Field Effect Transistors R (HFET's) have received increasing attention because of their potential for high-speed, low-noise, and low-power applications [I 1-[3]. Although HFET's have been successful in high-frequency analog applications, they have not yet shared the same success in low-power digital applications because of the substantial gate leakage current [4]. Gate leakage currents may play an important role in compound semiconductor FET's, especially in enhancement-mode HFET's where gate currents can affect intrinsic channel currents [5], [6]. The behavior of the gate current in HFET's as a function of drain-source and gate-source voltages varies widely among different devices. In some devices, the gate current is observed to decrease monotonically as the drain bias voltage increases, while in other devices, the gate current for rellatively high gate biases first reaches a minimum at a relative1:y low drain bias, and increases to a saturation value with a further increase in Manuscript

DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs

IEEE Transactions on Electron Devices, 1989

Analytical modeling of these very-short-channel HEMTs (high-electron-mobility transistors) using ... more Analytical modeling of these very-short-channel HEMTs (high-electron-mobility transistors) using the charge-control model is given. The calculations performed using this model indicate a very high electron velocity in the device channel (3.2 + or - 0.2 x 10 to the 7th cm/s) and clearly demonstrate the advantages of the planar-doped devices as compared to the conventional uniformly doped HEMTs. Devices with

Dipole heterostructure field-effect transistor

IEEE Electron Device Letters, 1990

Dipole heterostructure field-effect transistors (dipole HFET's) fabricated in AIGaAs/GaAs use dop... more Dipole heterostructure field-effect transistors (dipole HFET's) fabricated in AIGaAs/GaAs use doped p+ + and n+ + planes in the charge control AlGaAs layer to form a dipole that provides a considerably larger barrier between the channel and the gate than that in conventional heterostructure FET's. This leads to a reduction of the forward-biased gate current in enhancement-mode n-channel devices, by a factor of approximately 9 at 1.2 V in the experimental devices, when compared with equivalent conventional HFET's. We also observe a much broader transconductance region, in the range 0.5-2.5-V gate bias, a higher maximum drain current, and no negative transconductance.

긴 채널 NMOSFET 에 대한 통합 전류-전압 (A Unified Current-Voltage Model for Long Channel NMOSFET's)

Michael Shur co-Founder, Vice-President and Chief Technology Officer of Electronics of the Future, Inc.

Cyber security affects literally every computer user. A multibillion world-wide industry is tryin... more Cyber security affects literally every computer user. A multibillion world-wide industry is trying to solve this growing and very dangerous problem. And all these efforts are focused on fighting malicious software. However, the malicious hardware is even more of a threat and much harder to detect. Our company - Electronics of the Future, Inc. - has developed technology and a family of products to detect the malicious hardware. Electronics of the Future is using terahertz scanning technology and Artificial Intelligence to detect genuine and faked integrated circuits.

6 views

Graphene plasmonic heterostructures for terahertz device applications

2014 International Conference Laser Optics, 2014

Simulation and Modeling of Compound Semiconductor Devices

Selected Topics in Electronics and Systems, 1996

ABSTRACT

Non-Ideal Current Transport in Heterostructure Field Effect Transistors

International Journal of High Speed Electronics and Systems, 2008

We describe a new analytical model of a Heterostructure Field Effect Transistors (HFETs) that acc... more We describe a new analytical model of a Heterostructure Field Effect Transistors (HFETs) that accounts for electron trapping in the gate-drain spacing of the device and for related non-ideal device behavior. Under conditions of a very strong trapping, the electron velocity saturates outside the gate, in the trapping region, and the negative trapped charge leads to relatively large differential output conductance at the drain voltages exceeding the knee voltage. Also under the conditions of severe trapping, the negative trapped charge leads to the positive offset of the output current-voltage (I-V) characteristic. The model describes quite well numerous experimental data for passivated and unpassivated AlGaN / GaN HFETs with and without field plates (FP) under different bias conditions.

Complementary heterostructure insulated gate field effect transistors (HIGFETs)

1985 International Electron Devices Meeting, 1985

ABSTRACT

Gallium Arsenide versus Silicon — Applications and Modelling

Semiconductor Device Modelling, 1989

Silicon is the most important material for semiconductor electronics. Silicon devices and integra... more Silicon is the most important material for semiconductor electronics. Silicon devices and integrated circuits are dominant in most applications -- from consumer electronics to computers, from automotive electronics to sensors and imagers. However, in certain areas, silicon is being challenged by other semiconductor materials, such as gallium arsenide and related compounds. Gallium arsenide devices and monolithic microwave integrated circuits excel in ultra-high frequency applications. Gallium arsenide digital integrated circuits have emerged as leading contenders for ultrahigh speed applications in the next generation of supercomputers and communication equipment. These new technologies are located much earlier on the learning curve and their relative importance is expected to increase sharply in the near future.

Color rendition engineering of phosphor-converted light-emitting diodes

Optics Express, 2013

We present an approach to the optimization of the trichromatic spectral power distributions (SPDs... more We present an approach to the optimization of the trichromatic spectral power distributions (SPDs) of phosphor-converted (p-c) lightemitting diodes (LEDs) in respect of each of four different color rendition properties (high color fidelity, color saturating, color dulling, and color preference). The approach is based on selecting a model family of Eu 2+ phosphors and finding the optimal peak wavelengths of the phosphor bands as functions of the luminous efficacy of radiation. A blue component due to either phosphor photoluminescence or InGaN electroluminescence with the peak wavelength at about 460 nm was found to be an optimal one for the high-fidelity, color-dulling, and color-preference LEDs. The high-fidelity and color-preference LEDs need red phosphors with the peak wavelength of 610-615 nm. The high-fidelity LEDs were shown to require a true green (~530 nm) phosphor component, whereas a cyan (~510 nm) component is the prerequisite of the color-saturating and color-preference LEDs. Deepblue (~445 nm) and deep-red (~625 nm) components are required for the color-saturating LEDs. A broad yellow band similar to that of Ce 3+ emission is to be used in the color-dulling LEDs. The SPDs of practical phosphor blends for the high-fidelity, color-saturating, and color-preference p-c LEDs are demonstrated.

Physics of GaN devices (Keynote Address)

SPIE Proceedings, 2005

ABSTRACT

Symposium D: Advanced Materials and Devices for Large-Area Electronics

GaN-based electronic devices

Solid-State Electronics, 1999

We review the parameters and performance of GaN-based pyroelectric and piezoelectric sensors and ... more We review the parameters and performance of GaN-based pyroelectric and piezoelectric sensors and report on the characteristics of GaN-based High Electron Mobility Transistors (HEMTs) grown on 4H-SiC substrates. The piezoelectric and pyroelectric devices can operate at elevated temperatures, where conventional pyroelectric materials have poor characteristics or even lose pyroelectric properties. The transistors grown on insulating 4H-SiC substrates have a much smaller thermal impedance, exhibit less severe self-heating eects, lower noise, and their microwave performance is less sensitive to a temperature increase than for similar devices on sapphire substrates.

Field effect transistor modeling issues

Physica Scripta, 1997

ABSTRACT

Conductance of small semiconductor devices

Microelectronics Journal, 1984

We calculate low field conductivity and mobility as a function of a sample length for small semic... more We calculate low field conductivity and mobility as a function of a sample length for small semiconductor samples. When the sample length is much smaller than the mean free path the current density is proportional to the applied voltage so that the apparent low field mobility is proportional to the device length. Calculation of the apparent low field mobility for high mobility GaAs devices shows that the size effects may be important for sample lengths smaller than 2 ~m.

Capacitance-voltage characteristics of amorphous silicon thin-film transistors

Journal of Applied Physics, 1989

We present the results of experimental and theoretical studies of capacitance-voltage characteris... more We present the results of experimental and theoretical studies of capacitance-voltage characteristics of amorphous silicon thin-film transistors. The small-signal capacitances are calculated as derivatives of channel charge with respect to terminal voltages. The induced charge is evaluated using the same charge-control model for an amorphous silicon thin-film transistor as we used to calculate the current-voltage characteristics of this device. The calculated dependences of capacitances on bias voltages are in good agreement with our experimental data. The capacitance-voltage model is suitable for incorporation into a circuit simulator and can be used for computer-aided design of a-Si integrated circuits.

1/F Noise in Pentacene Organic Thin Film Transistors

Journal of Applied Physics, 2000

We report on the flicker (1/f ) noise in pentacene organic thin film transistors (TFTs) of differ... more We report on the flicker (1/f ) noise in pentacene organic thin film transistors (TFTs) of different designs. Our studies show that the TFT design affects the noise level and the noise dependence on the gate- and drain-source biases. The measured noise level was the lowest for the TFTs with a top source and drain contacts design. For these devices, the noise dependence at low drain current values resembled that for n-type crystalline Si metal–oxide–semiconductor field-effect transistors. The extracted Hooge parameter α, which allows comparing the noise level in different devices and materials, was 0.045 for the top-contact TFTs. This parameter value is several orders of magnitude lower than that for conducting polymers and only several times higher than that for hydrogenated amorphous Si (α-Si:H) TFTs. The bottom source and drain contacts TFTs had a much higher noise level with a noise dependence on the terminal voltages that differed from the noise voltage dependence for the top-co...

Plasmonic terahertz detector response at high intensities

Journal of Applied Physics, 2012

Recent work on plasmonic terahertz detection using field effect transistors (FETs) has yielded de... more Recent work on plasmonic terahertz detection using field effect transistors (FETs) has yielded detectors with high responsivity. Therefore, deviation from small signal mode of operation, when the detector signal is simply proportional to the THz intensity, must be considered. This work presents a new analytical model to predict terahertz response in a FET at arbitrary intensity levels. The proposed analytical model was experimentally validated using a 0.13 μm InGaAs high electron mobility transistor and optically pumped CO2 gas laser operating at 1.63 THz of varying output intensities. The model is suitable for implementation in circuit simulators and might be used for device optimization and THz circuit design.

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

Journal of Applied Physics, 2009

The analysis of experimental data following the McWhorter model for the low frequency noise in am... more The analysis of experimental data following the McWhorter model for the low frequency noise in amorphous Si thin film transistors (TFTs) with SiNx gate dielectric revealed relatively low density of traps Nt≈1019 (cm3 eV)−1. This value is close to the lower limit ever reported for amorphous and polycrystalline Si TFTs. Trap density only slightly increases with the increase of the gate voltage, i.e., approaching the conduction band edge.

Enhanced CAD model for gate leakage current in heterostructure field effect transistors

IEEE Transactions on Electron Devices, 1996

A simple and accurate circuit model for Heterostructure Field Effect Transistors (HFET's) is prop... more A simple and accurate circuit model for Heterostructure Field Effect Transistors (HFET's) is proposed to simulate both the gate and the drain current characteristics accounting for hot-electron effects on gate current and the effect of the gate current on the channel current. An analytical equation that describes the effective electron temperature is developed in a simple form. This equation is suitable for implementation in circuit simulators. The model describes both the drain and gate currents at high gate bias voltages. It has been implemented in our circuit simulator AIM-Spice, and good agreement between simulated and measured results is achieved for enhancementmode HFET's ffabricated in different laboratories. The proposed equivalent circuit and model equations are applicable to other compound semiconductor FET's, i.e., GaAs MESFET's. I. INTRODUCTION ECENTLX, Heterostnicture Field Effect Transistors R (HFET's) have received increasing attention because of their potential for high-speed, low-noise, and low-power applications [I 1-[3]. Although HFET's have been successful in high-frequency analog applications, they have not yet shared the same success in low-power digital applications because of the substantial gate leakage current [4]. Gate leakage currents may play an important role in compound semiconductor FET's, especially in enhancement-mode HFET's where gate currents can affect intrinsic channel currents [5], [6]. The behavior of the gate current in HFET's as a function of drain-source and gate-source voltages varies widely among different devices. In some devices, the gate current is observed to decrease monotonically as the drain bias voltage increases, while in other devices, the gate current for rellatively high gate biases first reaches a minimum at a relative1:y low drain bias, and increases to a saturation value with a further increase in Manuscript

DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs

IEEE Transactions on Electron Devices, 1989

Analytical modeling of these very-short-channel HEMTs (high-electron-mobility transistors) using ... more Analytical modeling of these very-short-channel HEMTs (high-electron-mobility transistors) using the charge-control model is given. The calculations performed using this model indicate a very high electron velocity in the device channel (3.2 + or - 0.2 x 10 to the 7th cm/s) and clearly demonstrate the advantages of the planar-doped devices as compared to the conventional uniformly doped HEMTs. Devices with

Dipole heterostructure field-effect transistor

IEEE Electron Device Letters, 1990

Dipole heterostructure field-effect transistors (dipole HFET's) fabricated in AIGaAs/GaAs use dop... more Dipole heterostructure field-effect transistors (dipole HFET's) fabricated in AIGaAs/GaAs use doped p+ + and n+ + planes in the charge control AlGaAs layer to form a dipole that provides a considerably larger barrier between the channel and the gate than that in conventional heterostructure FET's. This leads to a reduction of the forward-biased gate current in enhancement-mode n-channel devices, by a factor of approximately 9 at 1.2 V in the experimental devices, when compared with equivalent conventional HFET's. We also observe a much broader transconductance region, in the range 0.5-2.5-V gate bias, a higher maximum drain current, and no negative transconductance.

긴 채널 NMOSFET 에 대한 통합 전류-전압 (A Unified Current-Voltage Model for Long Channel NMOSFET's)

Solid-state lamps with partial conversion in phosphors for rendering an enhanced number of colors