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Syllabus: Topic Reading Assignment Date

This syllabus outlines an undergraduate course on solid state electronic devices. The course will cover topics such as semiconductors, carrier generation and recombination, p-n junctions, transistors, and other devices. It lists the prerequisites, instructor information, textbook, grading breakdown, and tentative schedule. Exams will be held in class and a final exam will be given during the regular exam period. Homework will be assigned weekly.

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57 views2 pages

Syllabus: Topic Reading Assignment Date

This syllabus outlines an undergraduate course on solid state electronic devices. The course will cover topics such as semiconductors, carrier generation and recombination, p-n junctions, transistors, and other devices. It lists the prerequisites, instructor information, textbook, grading breakdown, and tentative schedule. Exams will be held in class and a final exam will be given during the regular exam period. Homework will be assigned weekly.

Uploaded by

jewbaccamkii
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Syllabus

COURSE: PREREQUISITES: INSTRUCTOR: OFFICE HOURS: EE339, MWF 2:30-4:00PM, ENS 126 M 427K, and PHY 303L and 103N with a grade of at least C in each Dr. Yihong (Maggie) Chen [email protected] Monday 1:30-2:25pm, TA Wednesday 1:30-2:25pm, Instructor, Room ENS 422 Friday 1:30-2:25pm, Instructor, Room ENS 422 TEXT: GRADING: B.G.Streetman and Sanjay Banerjee, Solid State Electronic Devices, Sixth Edition Homework*: 10% 2 in-class Exams: 25%, 25% Final: 40% OUTLINE (rough and subject to change) Topic Introduction; semiconductors; crystal lattices Quantum mechanics Atomic structure and periodic table; energy band in solid Charge carrier in semiconductors Carrier concentrations Drift of carriers in electric fields; optical absorption Luminescence; Recombination of electrons and holes Review #1 in class Exam Carrier generation; photoconductivity Diffusion; drift diffusion Diffusion and recombination, diffusion length Holiday Fabrication of p-n junctions; equilibrium conditions Current flow at a junction; carrier injection 5.1-5.2 5.3 4.3.3-4.3.4 4.4.1-4.4.2 4.4.3-4.4.4 Reading assignment 1.1-1.3 2.1-2.2,2.4 2.3, 2.5 3.1-3.2 3.2-3.3 3.4, 4.1 4.2, 4.3.1-4.3.2 Date 6/3 6/8 6/10 6/13 6/15 6/17 6/20 6/22 6/24 6/27 6/29 7/1 7/4 7/6 7/8

Reverse-biased junctions Reverse-bias breakdown Transient and A-C conditions Review #2 in-class exam Metal-semiconductor junctions; heterojunctions BJT operation; amplification; fabrication Minority carrier distributions and terminal currents Generalized biasing; Switching The JFET; MESFET Metal-insulator-semiconductor FET MOS FET Review for Final Exam

5.3 5.4 5.5

7/11 7/13 7/15 7/18 7/20

5.7-5.8 7.1-7.2 7.4 7.5, 7.6 6.1-6.3 6.4 6.5

7/22 7/25 7/27 7/29 8/1 8/3 8/8 8/10

Final Exam Monday 8/15 7:00-10:00pm

*Homework is assigned once per week and due one week after assignment. No late homework accepted.

Students with Disabilities: The University of Texas at Austin provides upon request appropriate academic accommodations for qualified students with disabilities. For more information, contact the Office of the Dean of Students at 471-6259, 471-4641 TTY or the College of Engineering Director of Students with Disabilities at 471-4382.

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