EE130: Integrated Circuit Devices
(online at http://webcast.berkeley.edu) Instructor: Prof. Tsu-Jae King ([email protected]) TAs: Marie Eyoum ([email protected]) Alvaro Padilla ([email protected]) http://www-inst.eecs.berkeley.edu/~ee130/ ucb.class.ee130
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Course Outline
1. Semiconductor Fundamentals 3 weeks 2. Metal-Semiconductor Contacts 1 week 3. P-N Junction Diode 3 weeks 4. Bipolar Junction Transistor 3 weeks 5. MOS Capacitor 1 week 6. MOSFET 4 weeks
Source Substrate
Spring 2003
Gate Drain
Introduction
Integrated-Circuit Devices
Power4 P
4004 P
Spring 2003
Planar Process Technology
starting substrate Si wafer
*planar processing steps
multiple devices monolithically integrated
n-channel MOSFET
*sequence of additive and subtractive steps with lateral patterning
oxidation deposition ion implantation
Spring 2003
etching
lithography
IC Technology Advancement
Rapid advances in IC technology have been achieved primarily by scaling down transistor lateral dimensions
Technology Scaling
100
ITRS 2001 Projection
Investment
Better Performance/Cost
GATE LENGTH (nm)
Market Growth
10
LOW POWER HIGH PERFORMANCE 1 2000 2005 2010 YEAR 2015 2020
Spring 2003
Benefit of Transistor Scaling
Moores Law # transistors/chip doubles every 1.5 to 2 years
1,000,000,000 100,000,000 10,000,000 1,000,000 100,000 10,000 1,000 2010
1970
Spring 2003
1980
1990
2000
Example: Microprocessor Evolution
Generation: 1.5 1.0 0.8 0.6 0.35 0.25
Intel386 DX Processor Intel486 DX Processor
Pentium Processor Pentium II Processor
Spring 2003
Semiconductor Fundamentals
OUTLINE General material properties Crystal structure Bond model Read: Chapter 1
What is a Semiconductor?
Low resistivity => conductor High resistivity => insulator Intermediate resistivity => semiconductor
conductivity lies between that of conductors and insulators generally crystalline in structure for IC devices
In recent years, however, non-crystalline semiconductors have become commercially very important
polycrystalline amorphous crystalline
Spring 2003
Semiconductor Materials
Elemental:
Compound:
Alloy:
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From Hydrogen to Silicon
# of Electrons 1 2 3 Z Name 1s 2s 2p 3s 3p 3d 1H 2 He 3 Li 4 Be 5B 6C 7N 8O 9F 10 Ne 11 Na 12 Mg 13 Al 14 Si 15 P 16 S 17 Cl 18 Ar 1 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 1 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 1 2 3 4 5 6 6 6 6 6 6 6 6 6 1 2 2 2 2 2 2 2 1 2 3 4 5 6 1s 1 1s 2 1s 2 2s 1 1s 2 2s 2 1s 2 2s 2 2p1 1s 2 2s 2 2p2 1s 2 2s 2 2p3 1s 2 2s 2 2p4 1s 2 2s 2 2p5 1s 2 2s 2 2p6 1s 2 2s 2 2p6 3s 1 1s 2 2s 2 2p6 3s 2 1s 2 2s 2 2p6 3s 2 3p1 1s 2 2s 2 2p6 3s 2 3p2 1s 2 2s 2 2p6 3s 2 3p3 1s 2 2s 2 2p6 3s 2 3p4 1s 2 2s 2 2p6 3s 2 3p5 1s 2 2s 2 2p6 3s 2 3p6 Notation
Spring 2003
The Silicon Atom
14 electrons occupying the 1st 3 energy levels: 1s, 2s, 2p orbitals filled by 10 electrons 3s, 3p orbitals filled by 4 electrons
To minimize the overall energy, the 3s and 3p orbitals hybridize to form 4 tetrahedral 3sp orbitals
Each has one electron and is capable of forming a bond with a neighboring atom
Spring 2003
The Si Crystal
Each Si atom has 4 nearest neighbors lattice constant = 5.431
diamond cubic lattice
Spring 2003
Compound Semiconductors
Ga
As
zincblende structure III-V compound semiconductors: GaAs, GaP, GaN, etc. important for optoelectronics and high-speed ICs
Spring 2003
Crystallographic Notation
Miller Indices: Notation (hkl) {hkl} [hkl] <hkl> Interpretation crystal plane equivalent planes crystal direction equivalent directions
h: inverse x-intercept of plane k: inverse y-intercept of plane l: inverse z-intercept of plane
(Intercept values are in multiples of the lattice constant; h, k and l are reduced to 3 integers having the same ratio.)
Spring 2003
Crystallographic Planes and Si Wafers
Silicon wafers are usually cut along the (100) plane with a flat or notch to orient the wafer during IC fabrication:
Spring 2003
(100) plane (011) flat
Crystallographic Planes in Si
Unit cell:
lattice constant = 5.431 5 x 1022 atoms/cm3
View in <111> direction View in <100> direction View in <110> direction
Spring 2003
Electronic Properties of Si
Silicon is a semiconductor material. Pure Si has a relatively high electrical resistivity at room temperature. There are 2 types of mobile charge-carriers in Si: Conduction electrons are negatively charged; Holes are positively charged. The concentration (#/cm3) of conduction electrons & holes in a semiconductor can be modulated in several ways:
1. 2. 3. 4.
Spring 2003
by adding special impurity atoms ( dopants ) by applying an electric field by changing the temperature by irradiation
Bond Model of Electrons and Holes
Si Si Si Si Si Si Si
2-D representation:
Si Si
When an electron breaks loose and becomes a conduction electron, a hole is also created.
Spring 2003
Si Si Si
Si Si Si
Si Si Si
What is a Hole?
Mobile positive charge associated with a half-filled covalent bond
Treat as positively charged mobile particle in the semiconductor
Fluid analogy:
Spring 2003
The Hole as a Positive Mobile Charge
Spring 2003
Pure Si
conduction
ni 1010 cm-3 at room temperature
Spring 2003
Summary
Crystalline Si:
4 valence electrons per atom diamond lattice: each atom has 4 nearest neighbors 5 x 1022 atoms/cm3
In a pure Si crystal, conduction electrons and holes are formed in pairs.
Holes can be considered as positively charged mobile particles which exist inside a semiconductor. Both holes and electrons can conduct current.
Spring 2003
