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W9NK90Z

este documento se refiere al manejo de los transistores mofet y la ubicacion de sus entradas y salidas , es la ficha tecnica de estos componentes electronicos y te servira para realizar adecuadamente las pruebas de funcionamiento de dichos accesorios.
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0% found this document useful (0 votes)
337 views16 pages

W9NK90Z

este documento se refiere al manejo de los transistores mofet y la ubicacion de sus entradas y salidas , es la ficha tecnica de estos componentes electronicos y te servira para realizar adecuadamente las pruebas de funcionamiento de dichos accesorios.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 16

STB9NK90Z - STFPNK90Z

STP9NK90Z - STW9NK90Z
N-channel 900V - 1.1 - 8A - TO-220 /FP- D2PAK - TO-247
Zener-protected superMESHTM MOSFET
General features
Type

VDSS

RDS(on)

ID

Pw

STB9NK90Z

900V

<1.3

8A

160 W

3
3

STW9NK90Z

900V

<1.3

8A

160 W

STP9NK90Z

900V

<1.3

8A

160 W

STF9NK90Z

900V

<1.3

8A

160 W

Extremely high dv/dt capability

100% avalanche tested

Gate charge minimized

TO-220

DPAK

3
1

TO-247

TO-220FP

Description
The SuperMESH series is obtained through an
extreme optimization of STs well established
strip-based PowerMESH layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.

Internal schematic diagram

Applications

Switching application

Order codes
Part number

Marking

Package

Packaging

STB9NK90Z

B9NK90Z

DPAK

Tape & reel

STF9NK90Z

F9NK90Z

TO-220FP

Tube

STP9NK90Z

P9NK90Z

TO-220

Tube

STW9NK90Z

W9NK90Z

TO-247

Tube

July 2006

Rev 4

1/16
www.st.com

16

Contents

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

Contents
1

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1

Electrical characteristics (curves)

............................ 7

Test circuit

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2/16

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

Electrical ratings

Electrical ratings
Table 1.

Absolute maximum ratings


Value

Symbol

VDS
VDGR
VGS

Parameter

Unit

TO-220/DPAK/
TO-247

TO-220FP

Drain-source voltage (VGS = 0)

900

Drain-gate voltage (RGS = 20K)

900

Gate-source voltage

30

ID

Drain current (continuous) at TC = 25C

8(1)

ID

Drain current (continuous) at TC=100C

5(1)

IDM(2)

Drain current (pulsed)

32

32(1)

PTOT

Total dissipation at TC = 25C

160

40

Derating Factor

1.28

0.32

W/C

Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5k)


dv/dt

(3)

VISO
TJ
Tstg

Peak diode recovery voltage slope


Insulation withstand voltage (DC)

KV

4.5

V/ns

--

Operating junction temperature


Storage temperature

2500
-55 to 150

V
C

1. Limited only by maximum temperature allowed


2. Pulse width limited by safe operating area
3. ISD 10A, di/dt 200A/s,VDD V(BR)DSS, Tj TJMAX

Table 2.

Thermal data
Value

Symbol

Rthj-case

Parameter

Thermal resistance junction-case Max

Rthj-a

Thermal resistance junction-ambient Max

Tl

Maximum lead temperature for soldering


purpose

Table 3.
Symbol

Unit

TO-220
TO-20FP
DPAK
0.78

TO-247

3.1
62.5
300

0.78

C/W

50

C/W
C

Avalanche characteristics
Parameter

IAS

Avalanche current, repetitive or not-repetitive


(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy


(starting Tj=25C, Id=Iar, VDD=50V)

Value

Unit

300

mJ
3/16

Electrical characteristics

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

Electrical characteristics
(TCASE=25C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS

On/off states
Parameter
Drain-source breakdown
voltage

Test conditions
ID = 1mA, VGS= 0

Min.

Typ.

Max.

900

Unit
V

VDS = Max rating,


VDS = Max rating @125C

1
50

A
A

Gate body leakage current


(VDS = 0)

VGS = 20V, VDS = 0

10

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 100A

3.75

4.5

RDS(on)

Static drain-source on
resistance

VGS= 10V, ID= 3.6A

1.1

1.3

IDSS

Zero gate voltage drain


current (VGS = 0)

IGSS

Table 5.
Symbol
gfs (1)
Ciss
Coss
Crss

Dynamic
Parameter

Qg
Qgd

Test conditions

Min.

Typ.

Max.

Unit

Forward transconductance

VDS =15V, ID = 3.6 A

5.75

Input capacitance
Output capacitance
Reverse transfer
capacitance

VDS =25V, f=1 MHz, VGS=0

2115
190
40

pF
pF
pF

VGS=0, VDS =0V to 720V

115

pF

VDD=720V, ID = 8A

72
14
38

nC
nC
nC

Coss eq(2). Equivalent output


capacitance

Qgs

Total gate charge


Gate-source charge
Gate-drain charge

VGS =10V
(see Figure 19)

1. Pulsed: pulse duration=300s, duty cycle 1.5%


2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS

4/16

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

Table 6.
Symbol
td(on)
tr
td(off)
tf
tr(Voff)
tf
tc

Table 7.
Symbol

Electrical characteristics

Switching times
Parameter
Turn-on delay time
Rise Time

Turn-off delay time


Fall time
Off-voltage Rise Time
Fall Time
Cross-over Time

Test conditions

Min.

VDD=450 V, ID=4A,
RG=4.7, VGS=10V
(see Figure 20)
VDD=450 V, ID=4A,
RG=4.7, VGS=10V
(see Figure 20)
VDD=720 V, ID=8A,
RG=4.7, VGS=10V
(see Figure 20)

Typ.

Max.

Unit

22
13

ns
ns

55
28

ns
ns

53
11
22

ns
ns
ns

Gate-source zener diode


Parameter

BVGSO(1) Gate-Source Breakdown


Voltage

Test conditions
Igs=1mA
(Open Drain)

Min.

Typ.

Max.

Unit

30

1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the
usage of external components.

Table 8.
Symbol

Source drain diode


Max

Unit

Source-drain current

ISDM(1)

Source-drain current (pulsed)

32

VSD(2)

Forward on voltage

ISD=8A, VGS=0

1.6

Reverse recovery time


Reverse recovery charge
Reverse recovery current

ISD=8A,

ISD

trr
Qrr
IRRM

Parameter

Test conditions

di/dt = 100A/s,
VDD=50V, Tj=150C

Min

Typ.

950
10
21

ns
C
A

1. Pulse width limited by safe operating area


2. Pulsed: pulse duration=300s, duty cycle 1.5%

5/16

Electrical characteristics

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

2.1

Electrical characteristics (curves)

Figure 1.

Safe operating area for TO-220/


DPAK

Figure 2.

Thermal impedance for TO-220/


DPAK

Figure 3.

Safe operating area for TO-220FP

Figure 4.

Thermal impedance for TO-220FP

Figure 5.

Safe operating area for TO-247

Figure 6.

Thermal impedance for TO-247

6/16

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

Electrical characteristics

Figure 7.

Output characterisics

Figure 8.

Transfer characteristics

Figure 9.

Transconductance

Figure 10. Static drain-source on resistance

Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations

7/16

Electrical characteristics

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

Figure 13. Normalized gate threshold voltage


vs temperature

Figure 14. Normalized on resistance vs


temperature

Figure 15. Source-drain diode forward


characteristics

Figure 16. Normalized BVDSS vs temperature

Figure 17. Maximum avalanche energy vs


temperature

8/16

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

Test circuit

Test circuit

Figure 18. Switching times test circuit for


resistive load

Figure 19. Gate charge test circuit

Figure 20. Test circuit for inductive load


Figure 21. Unclamped Inductive load test
switching and diode recovery times
circuit

Figure 22. Unclamped inductive waveform

Figure 23. Switching time waveform

9/16

Package mechanical data

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

Package mechanical data


In order to meet environmental requirements, ST offers these devices in ECOPACK
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

10/16

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

Package mechanical data

TO-220 MECHANICAL DATA


DIM.

mm.
MIN.

TYP

inch
MAX.

MIN.

TYP.

MAX.

4.40

4.60

0.173

0.181

0.61

0.88

0.024

0.034

b1

1.15

1.70

0.045

0.066

0.49

0.70

0.019

0.027

15.25

15.75

0.60

0.620

10

10.40

0.393

0.409

2.40

2.70

0.094

0.106

e1

4.95

5.15

0.194

0.202

1.23

1.32

0.048

0.052

H1

6.20

6.60

0.244

0.256

J1

2.40

2.72

0.094

0.107
0.551

13

14

0.511

L1

3.50

3.93

0.137

L20

16.40

L30

0.154
0.645

28.90

1.137

3.75

3.85

0.147

0.151

2.65

2.95

0.104

0.116

11/16

Package mechanical data

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

TO-220FP MECHANICAL DATA


mm.

DIM.

MIN.

4.4

inch

TYP

MAX.

MIN.

TYP.

4.6

0.173

0.181

MAX.
0.106

2.5

2.7

0.098

2.5

2.75

0.098

0.108

0.45

0.7

0.017

0.027

0.75

0.030

0.039

F1

1.15

1.7

0.045

0.067

F2

1.15

1.7

0.045

0.067

4.95

5.2

0.195

0.204

G1

2.4

2.7

0.094

0.106

10

10.4

0.393

0.409

L2

16

0.630

L3

28.6

30.6

1.126

1.204

L4

9.8

10.6

.0385

0.417

L5

2.9

3.6

0.114

0.141

L6

15.9

16.4

0.626

0.645

9.3

0.354

0.366

3.2

0.118

0.126

L7

L3
L6

F2

G1

F1

L7

L2

12/16

L5

1 2 3
L4

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

Package mechanical data

TO-247 MECHANICAL DATA

DIM.

mm.
MIN.

TYP

inch
MAX.

MIN.

TYP.

MAX.

4.85

5.15

0.19

0.20

A1

2.20

2.60

0.086

0.102

1.0

1.40

0.039

0.055

b1

2.0

2.40

0.079

0.094
0.134

b2

3.0

3.40

0.118

0.40

0.80

0.015

0.03

19.85

20.15

0.781

0.793

15.45

15.75

0.608

5.45

14.20

14.80

0.560

L1

3.70

4.30

0.14

L2

0.620
0.214

18.50

0.582
0.17
0.728

3.55

3.65

0.140

0.143

4.50

5.50

0.177

0.216

5.50

0.216

13/16

Packaging mechanical data

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

Packaging mechanical data


D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT


REEL MECHANICAL DATA
DIM.

mm
MIN.

A
B

1.5

12.8

20.2

24.4

100

TAPE MECHANICAL DATA


DIM.

mm
MIN.

MAX.

MIN.

A0

10.5

10.7

0.413 0.421

B0

15.7

15.9

0.618 0.626

1.5

1.6

0.059 0.063

D1

1.59

1.61

0.062 0.063

1.65

1.85

0.065 0.073

11.4

11.6

0.449 0.456

K0

4.8

5.0

0.189 0.197

P0

3.9

4.1

0.153 0.161

P1

11.9

12.1

0.468 0.476

P2

1.9

2.1

0.075 0.082

MAX.

50

1.574

0.25

0.35 0.0098 0.0137

23.7

24.3

* on sales type

14/16

inch

0.933 0.956

inch

MAX.

MIN.

MAX.

330

12.992

13.2

0.504 0.520

26.4

0.960 1.039

0.059
0795
3.937
30.4

1.197

BASE QTY

BULK QTY

1000

1000

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

Revision history

Revision history
Table 9.

Drevision history

Date

Revision

Changes

08-Sep-2005

Complete version

27-Oct-2005

Inserted ecopack indication

20-Jul-2006

New template, no content change

15/16

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (ST) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to STs terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN STS TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
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Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

2006 STMicroelectronics - All rights reserved


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16/16

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