This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG001
N-channel enhancement mode IGBT
For plasma display panel drive
For high speed switching circuits
Features Package
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Low collector-emitter saturation voltage: VCE(sat) < 2.5 V Code
High speed hall time: tf = 250 nsec(typ.) TO-220F-A1
Marking Symbol: 2PG001
Absolute Maximum Ratings TC = 25C Pin Name
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Parameter Symbol Rating Unit 1. Gate
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Collector-emitter voltage (E-B short) VCES 300 V
3. Emitter
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Gate-emitter voltage (E-B short) VGES 30 V
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Collector current IC 30 A Internal Connection
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Peak collector current * ICP 120 A C
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Power dissipation PC G
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Junction temperature Tj 150 C E
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Storage temperature Tstg 55 to +150 C
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Electrical Characteristics TC = 25C3C
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Parameter Symbol Conditions Min Typ Max Unit
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Collector-emitter voltage (E-B short) VCES IC = 1 mA, VGE = 0 300 V
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Collector-emitter cutoff current (E-B short) ICES VCE = 240 V, VGE = 0 50 mA
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Gate-emitter cutoff current (E-B short) IGES VGE = 30 V, VCE = 0 1.0 mA
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Gate-emitter threshold voltage VGE(th) VCE = 10 V, IC = 1.0 mA 3.0 5.5 V
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Collector-emitter saturation voltage VCE(sat) VGE = 15 V, IC = 30 A 2.0 2.5 V
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Short-circuit input capacitance (Common emitter) Cies 580 pF
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Short-circuit output capacitance (Common emitter) Coes VCE = 25 V, VGE = 0, f = 1 MHz 86 pF
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Reverse transfer capacitance (Common emitter) Cres 14 pF
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Gate charge load Qg 25 nC
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Gate-emitter charge Qge VCC = 150 V, IC = 30 A, VGE = 15 V 5 nC
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Gate-collector charge Qgc 10 nC
Turn-on delay time td(on) 87 ns
Rise time tr VCC = 150 V, IC = 30 A, 400 ns
Turn-off delay time td(off) RL 5 , VGE = 15 V 120 ns
Fall time tf 150 ns
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date : June 2007 SJN00003AED 1
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Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
cy
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
on na
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maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
du
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
ro
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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Electric Industrial Co., Ltd.
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