COLLEGE OF ENGINEERING
PUTRAJAYA CAMPUS
TEST II
SEMESTER 2 2009 / 2010
PROGRAMME : Bachelor of Electrical Power Engineering (Honours)
Bachelor of Electrical and Electronics Engineering (Honours)
SUBJECT CODE : EEEB143
SUBJECT : Electronics Analysis & Design I
DATE : 10 Mac 2010
TIME : 1 hour
INSTRUCTIONS TO CANDIDATES:
1. This paper contains TWO (2) questions in THREE (3) pages.
2. Answer ALL.
3. Write all answers in the answer booklet provided.
4. Write answer to each question on a new page.
5. Some formulas, constant numbers and conversion factors are provided in Appendix.
THIS QUESTION PAPER CONSISTS OF 4 PRINTED PAGES INCLUDING THIS
COVER PAGE.
Page 1 of 4
EEEB143, Semester 2 2009/2010
QUESTION 1 [20 marks]
For the circuit shown in Figure 1 below, let β = 100.
(a) Find RTH and VTH for the base circuit. [2 marks]
Figure 1
(b) Determine ICQ and VCEQ. [6 marks]
(c) Draw the load line and plot the Q-point. [2 marks]
(d) If the resistors RC and RE vary by +/- 5 percent, determine the range in ICQ and VCEQ.
[6 marks]
(e) Draw the load lines corresponding to the maximum and minimum resistor values and
plot the Q-points. [4 marks]
QUESTION 2 [20 marks]
For the circuit in Figure 2, Given, β=100, VA= ∞, VCC =10V, and RB =50kΏ, Sketch the
load line graph to indicate the necessary points.
(a) Determine VBB and RC such that ICQ=0.5mA and Q point in the center of line.
[10 marks]
(b) Find the small signal parameters transconductance gm, rπ and output resistance r0
[10 marks]
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EEEB143, Semester 2 2009/2010
Figure 2
END OF QUESTIONS-
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EEEB143, Semester 2 2009/2010
APPENDIX
EEEB143 FORMULAS
1. ni = BT3/2 exp(-Eg/(2kT)) Small-signal transistor models:
2. n0p0 = ni2
3. Jdrift = (enn + enp)E
4. Vbi = kT ln [ (Na Nd) / ni2 )
5. iD = IS [exp(VD/VT) - 1]
6. IE = IC + IB
7. IC = IB
8. = (1+)-1
9. VBE(on) = 0.7 V
10. r = VT/IBQ, gm=ICQ/VT ro=VA/ICQ
11. Av=Vo/Vi
12. ID = Kn [ 2 (VGS - VTN ).VDS - V 2DS ]
13. ID = Kp [ 2 (VSG + VTP ).VSD - V2SD ]
14. ID = Kn (VGS - VTN )2
15. ID = Kp (VSG + VTP )2
16. VDS(sat) = VGS - VTN
17. VSD(sat) = VSG + VTP
18. ro = [IDQ]-1
19. gm = 2Kn (VGS - VTN)
vGS 2
20. ID = IDSS [ 1 - ]
VP
21. ro = [ IDQ ]-1
2 I DSS vGS
22. gm = ( ) [1 - ]
VP VP
23. VDS(sat) = vGS - VP
24. VSD(sat) = VP - vGS
CONSTANTS
Material Eg [eV] B [cm-3 K-3/2]
1. Silicon, Si 1.12 5.23 x 1015
2. Galium Arsenide, GaAs 1.4 2.10 x 1014
3. Germanium, Ge 0.66 1.66 x 1015
GENERAL CONSTANTS AND CONVERSION FACTORS
Constant Symbol Value
Angstrom Å 10-10 m
Boltzmann's constant k 1.38 x 1023 J/K, 8.6 x 10-5 eV/K
Electron-volt eV 1.6 x 10-19 J
Electronic charge e or q 1.6 x 10-19 C
Thermal Voltage VT kT/e or 0.026V at 300K
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