Thanks to visit codestin.com
Credit goes to www.scribd.com

0% found this document useful (0 votes)
163 views5 pages

Four Probe Method

The document summarizes an experiment to determine the resistivity and band gap of a germanium semiconductor sample using temperature-dependent resistivity measurements. Key points include: 1) Resistivity measurements were taken at varying temperatures between 25-140°C. 2) The resistivity followed an Arrhenius relationship with temperature. 3) By plotting the log of resistivity versus reciprocal temperature, the slope of the best-fit line was used to calculate the band gap of the germanium sample.

Uploaded by

SarthakJain
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
163 views5 pages

Four Probe Method

The document summarizes an experiment to determine the resistivity and band gap of a germanium semiconductor sample using temperature-dependent resistivity measurements. Key points include: 1) Resistivity measurements were taken at varying temperatures between 25-140°C. 2) The resistivity followed an Arrhenius relationship with temperature. 3) By plotting the log of resistivity versus reciprocal temperature, the slope of the best-fit line was used to calculate the band gap of the germanium sample.

Uploaded by

SarthakJain
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 5

Observations:

1. Semiconductor material = Germanium

2. Spacing between the probes, s = 0.24 cm

3. Thickens of the sample, W = 0.05 cm

Therefore, as per the table T1 provided in the manual f(W/s) = 6.931 Hence, the corresponding
resistivity can be calculated as,
𝜌0
𝜌=
𝑓(𝑊/𝑠)
𝑉
Where 𝜌0 = × 2𝜋 𝑠 note that V here is the measured voltage value
𝐼

Table:

(a) Constant current passed through the sample = __________ mA

Sr.No Temperature Voltage 103/T Resisitivity Log10


(K) (mV) (K-1)  ( cm) (calculated)
(calculated) (calculated)
25 (or whatever is the room temp)
30
40
50
60
70
80
90
100
110
120
130
140

Calculations
Temperature dependence of Resistivity:
𝐸𝑔
The resistivity of an intrinsic semiconductor is given as, 𝜌 = 𝐴𝑒 2𝑘𝑇 where A is some constant.
Taking logarithm, we get,

𝐸𝑔
𝑙𝑜𝑔𝑒 𝜌 = 𝑙𝑜𝑔𝑒 𝐴 +
2𝑘𝑇

Or

1 𝐸𝑔
𝑙𝑜𝑔10 𝜌 = 𝐶 +
2.3026 2𝑘𝑇

where C is the constant.

For convenience the above equation is re-written as

1 𝐸𝑔 103
𝑙𝑜𝑔10 𝜌 = 𝐶 + ∗
2.3026 ∗ 103 2𝑘 𝑇
103
Thus the graph between log of resisitivity, 𝑙𝑜𝑔10 𝜌 , and reciprocal of the temperature, 𝑇
, should be a
straight line in some range of temperature.

Band Gap:

103
The slope of the straight line between 𝑙𝑜𝑔10 𝜌 and is,
𝑇

𝐿𝑀 1 𝐸𝑔
𝑠𝑙𝑜𝑝𝑒 = = 3

𝑀𝑁 2.3026 ∗ 10 2𝑘

Therefore,

𝐸𝑔 = 2.3026 × 103 × 2𝑘 × (𝑠𝑙𝑜𝑝𝑒)

Use the k = 8.617 x 10-5 eV K-1 to obtain Eg in eV

Results:
The energy band gap for the given Germanium crystal = ______________ eV

You might also like