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Biasing of PN Junction Diode

This document discusses the biasing and V-I characteristics of a PN junction diode. It explains that applying a voltage to a diode is called biasing, and describes forward and reverse biasing. In forward bias, current flows easily when the voltage exceeds 0.7V. In reverse bias, a wide depletion region forms and little leakage current flows until avalanche breakdown occurs above the reverse voltage rating. The document provides details on cut-in voltage, saturation current, and ideal forward and reverse V-I curves of a diode.

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395 views24 pages

Biasing of PN Junction Diode

This document discusses the biasing and V-I characteristics of a PN junction diode. It explains that applying a voltage to a diode is called biasing, and describes forward and reverse biasing. In forward bias, current flows easily when the voltage exceeds 0.7V. In reverse bias, a wide depletion region forms and little leakage current flows until avalanche breakdown occurs above the reverse voltage rating. The document provides details on cut-in voltage, saturation current, and ideal forward and reverse V-I curves of a diode.

Uploaded by

girishkumardarisi254
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Biasing of PN Junction Diode

Contents
• Biasing of PN Junction Diode
• Forward Bias
• Reverse Bias
• V-I Characteristics
Biasing
• Applying External DC Voltage to any electronic
device is called “Biasing”
• Depending upon the polarity of the dc
voltage externally applied to PN Junction
diode the biasing is classified as:
• Forward Biasing
• Reverse Biasing
Forward Biasing

• Positive side is connected to p-region and negative side is


connected with n-region is called FORWARD BIASING
• Forward bias is a condition that allows current through PN junction.
Contd..

When input forward bias (V) increases then it crosses the Barrier
potential (V0) voltage reduces the depletion region and charge
carriers are move from n-side to p-side and vice versa.
Contd..

When V < V0 No current flows


V > V0 Current increases and depletion region width decreases
Contd..

Forward bias PN Junction Diode acts like a closed switch .


V-I Characteristics for Forward Bias
V
+ F–
The current in forward biased
IF
–
R called forward current(ma) and
+ VBIAS
+ –
is designated If.

At 0V (Vbias) across the diode,


there is no forward current.

With gradual increase of Vbias


the forward voltage and forward
current increases.
Contd..
V
+ F–
Cut-in Voltage(Vγ ):
IF
–
R It is the forward voltage
+ VBIAS
+ –
at which the current
through the junction
starts to increase rapidly.

For silicon
V0 (or) Vγ =0.7V
For Germanium
V0 (or) Vγ =0.3V

It offers Very low


Resistance.
Reverse Bias for PN Junction Diode

Positive side is connected to the


n-region whereas the negative
side is connected with p-region
known as Reverse Bias.
Contd..
• Negative terminal attracts holes in p-
region and positive terminal attracts
electrons in n-region.
• Depletion Region becomes wider as
electrons and holes move away from
the junction.
• The minority carriers constitute
current in reverse bias in the order of
µA called Reverse Saturation current
(I0 or Is) (or) Leakage Current.
Contd..

Reverse bias PN Junction Diode acts like a open switch .


Contd..
• In reverse bias PN Junction offers high amount
of resistance.
Breakdown in Reverse Biased
• When Reverse voltage is increased beyond
certain value large reverse current flows can
damaging the diode called “Reverse
Breakdown” of the diode and the
corresponding voltage is called Reverse
Breakdown Voltage(VBR).
• Avalanche Breakdown  PN Junction Diode
• Zener Breakdown  Zener Diode
Avalanche Effect

Carrier Multiplication
Contd..
Reverse Bias Voltage Increases  Kinetic Energy of the minority
Charge Carriers Increases  collide with atoms and break the
covalent bonds Dislodge Valence electrons  Carrier
Multiplication occurs Due to unexpected flood of charge
carriers reverse current increases  Avalanche Breakdown
V-I Characteristics for Reverse Bias
V-I Characteristics of PN Junction Diode
Ideal V-I Characteristics of Diode
Important Definitions
Maximum Forward Current: It is the highest
instantaneous forward current that a PN
junction can conduct without damage to the
junction.

Peak Inverse Voltage(PIV):It is the maximum


reverse bias voltage that can be applied to the
PN junction without damage to the junction.
Contd..
• Maximum Power Rating: It is the maximum
power that can be dissipated at the junction
without damaging it.
Next session
• Energy Band Structure of Open Circuited PN
Junction
• Current Components of PN Junction Diode

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