FTP06N40/FTA06N40

400V N-Channel MOSFET

General Features BVDSS RDS(ON) (Max.) ID
¾ Low ON Resistance
¾ Low Gate Charge (typical 18.6nC)
400V 1.0Ω 5.5A
¾ Fast Switching
¾ 100% Avalanche Tested
¾ RoHS Compliant/Lead Free

Applications
¾ High Efficiency SMPS
¾ Adaptor/Charger
¾ Active PFC
¾ LCD Panel Power

Ordering Information
Part Number Package Marking
FTP06N40 TO-220 FTP06N40
FTA06N40 TO-220F FTA06N40

Absolute Maximum Ratings TC=25℃ unless otherwise specified

Symbol Parameter FTP06N40 FTA06N40 Unit

[1]
VDSS Drain-to-Source Voltage 400 V
ID Continuous Drain Current 5.5 5.5*
ID@100℃ Continuous Drain Current Figure 3 A
IDM Pulsed Drain Current, VGS@10V[2] Figure 6
Power Dissipation 95 25 W
PD
Derating Factor above 25℃ 0.76 0.2 W/℃
VGS Gate-to-Source Voltage ±30 V
Single Pulse Avalanche
EAS 270 mJ
Energy L=18mH, ID=5.5A
dv/dt Peak Diode Recovery dv/dt[3] 4.5 V/ns
Soldering Temperature
TL 300
Distance of 1.6mm from case for 10 seconds
℃
TJ and TSTG Operating and Storage Temperature Range -55 to 150
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.

Thermal Characteristics
Symbol Parameter FTP06N40 FTA06N40 Unit
RθJC Thermal Resistance, Junction-to-Case 1.32 5.0
℃/W
RθJA Thermal Resistance, Junction-to-Ambient 65 65

ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 2.0 Mar. 2009

1/11
 FTP06N40/FTA06N40
Electrical Characteristics
OFF Characteristics TC =25℃ unless otherwise specified
Symbol Parameter Min. Typ. Max. Unit Test Conditions
Drain-to-Source Breakdown
BVDSS 400 -- -- V VGS=0V, ID=250µA
Voltage
Breakdown Voltage Temperature Reference to 25℃,
△BVDSS/△TJ -- 0.6 -- V/℃
Coefficient ID=250µA
-- -- 12 VDS=400V, VGS=0V
IDSS Drain-to-Source Leakage Current µA VDS=320V, VGS=0V,
-- -- 100
TC=125℃
-- -- 100 VGS=+30V
IGSS Gate-to-Source Leakage Current nA
-- -- -100 VGS=-30V

ON Characteristics TC =25℃ unless otherwise specified

Symbol Parameter Min. Typ. Max. Unit Test Conditions

RDS(ON) Static Drain-to-Source On-Resistance -- 0.8 1.0 Ω VGS=10V, ID=3.3A[4]

VGS(TH) Gate Threshold Voltage 2.0 -- 4.0 V VDS = VGS, ID=250µA

gfs Forward Transconductance -- 5.7 -- S VDS =15V, ID=5.5A[4]

Dynamic Characteristics Essentially independent of operating temperature

Symbol Parameter Min. Typ. Max. Unit Test Conditions
CISS Input Capacitance -- 622 --
VGS=0V
COSS Output Capacitance -- 65 -- pF VDS=25V
-- -- f=1.0MHZ
CRSS Reverse Transfer Capacitance 13.3 Figure 14
QG Total Gate Charge -- 18.6 --
VDD=200V
QGS Gate-to-Source Charge -- 1.7 -- nC ID=5.5A
-- -- Figure 15
QGD Gate-to-Drain (Miller) Charge 6.8

Resistive Switching Characteristics Essentially independent of operating temperature

Symbol Parameter Min. Typ. Max. Unit Test Conditions
td(ON) Turn-on Delay Time -- 17 --
VDD=200V
trise Rise Time -- 61 -- ID=5.5A
ns
td(OFF) Turn-off Delay Time -- 26 -- VGS=10V
RG=20Ω
tfall Fall Time -- 36 --

ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 2.0 Mar. 2009

2/11
 FTP06N40/FTA06N40
Source-Drain Diode Characteristics TC=25℃ unless otherwise specified
Symbol Parameter Min Typ. Max. Units Test Conditions
Continuous Source Current (Body
ISD -- -- 5.5 A
Diode) Integral P-N diode in
Maximum Pulsed Current(Body MOSFET
ISM -- -- 22 A
Diode)
VSD Diode Forward Voltage -- -- 1.2 V IS=5.5A, VGS=0V
trr Reverse Recovery Time -- 208 -- ns VGS=0V
Qrr Reverse Recovery Charge -- 1000 -- nC IF=5.5A,di/dt=100A/µs

NOTE：

[1] TJ=+25℃ to +150℃

[2] Repetitive rating, pulse width limited by maximum junction temperature.
[3] ISD=5.5A, di/dt≤100A/µs, VDD≤BVDSS, TJ=+150℃
[4] Pulse width≤380µs; duty cycle≤2%.

ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 2.0 Mar. 2009

3/11
 FTP06N40/FTA06N40
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
1
50%
Impedance(Normalized)

20%
ZθJC, Thermal

0.1 10%
5%
2%
0.01
1%
single pulse

0.001
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
tP, Rectangular Pulse Duration(s)

Figure 2. Maximum Power Dissipation vs. Case Figure 3. Maximum Continuous Drain Current vs
Temperature Case Temperature
100 7.0
90
6.0
80
PD, Power Dissipation (W)

5.0
ID, Drain Current (A)

70
60
4.0
50
3.0
40
30 2.0
20
1.0
10
0 0.0
25 50 75 100 125 150 25 50 75 100 125 150
TC, Case Temperature (℃) TC, Case Temperature (℃)

Figure 4. Typical Output Characteristics Figure 5. Typical Drain-to-Source ON Resistance

vs. Gate Voltage and Drain Current
30 5
VGS=15V
VGS=10 4.5
25 V
RDS(ON), Drain-to-Source ON

4 ID=2.75A
VGS=6.5V
ID, Drain Current(A)

Resistance(Ohm)

20 VGS=5.5V 3.5
ID=5.5A
3
15
2.5
VGS=5.0V
10 2

VGS=4.5V 1.5
5
VGS=4.0V 1
0 0.5
0 10 20 30 40 50 4 6 8 10 12 14 16 18 20
VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V)

ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 2.0 Mar. 2009

4/11
 FTP06N40/FTA06N40
Figure 6. Maximum Peak Current Capability
100
Transconductance may limit current in this region
IDM, Peak Current(A)

10

1
0.00001 0.0001 0.001 0.01 0.1 1 10
tP, Pulse Width(s)

Figure 7. Typical Transfer Characteristics Figure 8. Unclamped Inductive Switching Capability

18 100
-55 ℃
16
ID, Drain-to-Source Current (A)

IAS, Avalanche Current(A)

14

12 25 ℃ 10
Starting TJ=25 ℃
10

8 Starting TJ=150 ℃
150℃
6 1

0 0.1
3 4 5 6 7 8 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01
VGS, Gate-to-Source Voltage,(V) tAV, Time in Avalanche(s)

Figure 9. Typical Drain-to-Source ON Resistance Figure 10. Typical Drain-to-Source On Resistance

vs. Junction Temperature
1 2.4

2.2
RDS(ON), Drain-to-Source Resistance

0.95
2.0
RDS(ON), Drain-to-Source ON

1.8
Resistance(Ohm)

0.9
(Normalized)

1.6
0.85 VGS=10V 1.4
1.2
VGS=20V
0.8
1.0
0.8
0.75
0.6
0.7 0.4
0 2 4 6 8 -75 -50 -25 0 25 50 75 100 125 150
ID , Drain Current(A) TJ , Junction Temperature (℃)

ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 2.0 Mar. 2009

5/11
 FTP06N40/FTA06N40

Figure 11.Typical Breakdown Voltage vs. Junction Figure 12.Typical Threshold Voltage vs. Junction
Temperature Temperature
1.20 1.3

1.15 1.2
Breakdown Voltage (Normalized)

VGS(TH) Threshold Voltage

1.1
BVDSS, Drain-to-Source

1.10

(Normalized)
1.0
1.05
0.9
1.00
0.8

0.95 0.7

0.90 0.6
-75 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T J , Junction Temperature (℃) T J , Junction Temperature (℃)

Figure 13. Maximum Forward Safe Operation Area Figure 14. Typical Capacitance vs. Drain-to-Source
Voltage
100 10000

10us
CISS
1000
C, Capacitance(pF)
ID, Drain Current(A)

10 100us

1ms 100 COSS

1 Operating in this area 10ms

CRSS
may be limited by 10
RDS(ON)
DC

0.1 1
10 100 1000 0.01 0.1 1 10 100 1000
VDS, Drain-to-Source Voltage(V) VDS, Drain Voltage(V)

Figure 15. Typical Gate Charge vs. Gate-to-Source Figure 16. Typical Body Diode Transfer
Voltage Characteristics
12 80

70
VGS. Gate-to-Source Voltage(V)

ISD, Reverse Drain Current(A)

10
60
150 ℃
8
50 25℃

6 40 -55℃

30
4
20
2
10

0 0
0 2 4 6 8 10 12 14 16 18 20 0.25 0.5 0.75 1 1.25 1.5 1.75 2
QG, Gate Charge(nC) VSD, Source-to-Drain Voltage(V)

ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 2.0 Mar. 2009

6/11
 FTP06N40/FTA06N40
Test Circuit

ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 2.0 Mar. 2009

7/11
 FTP06N40/FTA06N40

ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 2.0 Mar. 2009

8/11
 FTP06N40/FTA06N40
Package Dimensions

ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 2.0 Mar. 2009

9/11
 FTP06N40/FTA06N40

ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 2.0 Mar. 2009

10/11
 FTP06N40/FTA06N40
Published by
ARK Microelectronics Co., Ltd.
No.9, East Zijing Road, High-tek District, Chengdu, P. R. China
All Rights Reserved.

Disclaimers

ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve
reliability, function or design and to discontinue any product or service without notice. Customers should obtain
the latest relevant information before orders and should verify that such information is current and complete. All
products are sold subject to ARK Microelectronics Co., Ltd’s terms and conditions supplied at the time of
order acknowledgement.

ARK Microelectronics Co., Ltd. warrants performance of its hardware products to the specifications at the
time of sale, Testing, reliability and quality control are used to the extent ARK Microelectronics Co., Ltd
deems necessary to support this warrantee. Except where agreed upon by contractual agreement, testing of all
parameters of each product is not necessary performed.

ARK Microelectronics Co., Ltd. does not assume any liability arising from the use of any product or circuit
designs described herein. Customers are responsible for their products and applications using ARK
Microelectronics Co., Ltd’s components. To minimize risk, customers must provide adequate design and
operating safeguards.

ARK Microelectronics Co., Ltd. does not warrant or convey any license either expressed or implied under its
patent rights, nor the rights of others. Reproduction of information in ARK Microelectronics Co., Ltd’s data
sheets or data books is permissible only if reproduction is without modification or alteration. Reproduction of this
information with any alteration is an unfair and deceptive business practice. ARK Microelectronics Co., Ltd is
not responsible or liable for such altered documentation.

Resale of ARK Microelectronics Co., Ltd’s products with statements different from or beyond the parameters
stated by ARK Microelectronics Co., Ltd. for the product or service voids all express or implied warrantees for
the associated ARK Microelectronics Co., Ltd’s product or service and is unfair and deceptive business
practice. ARK Microelectronics Co., Ltd is not responsible or liable for any such statements.

Life Support Policy:

ARK Microelectronics Co., Ltd’s products are not authorized for use as critical components in life devices or
systems without the expressed written approval of ARK Microelectronics Co., Ltd.

As used herein:
1. Life support devices or systems are devices or systems which:
a. are intended for surgical implant into the human body,
b. support or sustain life,
c. whose failure to perform when properly used in accordance with instructions for used provided in the
labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component is any component of a life support device or system whose failure
to perform can be reasonably expected to cause the failure of the life support device or system, or to affect
its safety or effectiveness.

ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 2.0 Mar. 2009

11/11