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NTE2649 Transistor Specs

This document provides specifications for the NTE2649 silicon NPN transistor. It is a Darlington transistor comparable to the NTE2650. The document lists absolute maximum ratings such as voltage and current limits. It also provides typical electrical characteristics like current gain, saturation voltages, and transition frequency. A schematic diagram shows the transistor layout with physical dimensions in inches and millimeters.

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Juan Ramírez
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94 views2 pages

NTE2649 Transistor Specs

This document provides specifications for the NTE2649 silicon NPN transistor. It is a Darlington transistor comparable to the NTE2650. The document lists absolute maximum ratings such as voltage and current limits. It also provides typical electrical characteristics like current gain, saturation voltages, and transition frequency. A schematic diagram shows the transistor layout with physical dimensions in inches and millimeters.

Uploaded by

Juan Ramírez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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NTE2649

Silicon NPN Transistor


Darlington
(Compl to NTE2650)

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Power Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C

Electrical Characteritics: (TA = +25°C unless otherwise specified)


Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 200V, IE = 0 − − 100 µA
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 100 µA
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 30mA 200 − − V
DC Current Gain hFE VCE = 4V, IC = 10A 5000 − −
Collector−Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 10mA − − 2.5 V
Base−Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 10mA − − 3.0 V
Transition Frequency fT VCE = 12V, IE = 2A − 70 − MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz − 120 − pF
Schematic Diagram

.190 (4.82) .615 (15.62)

.787
(20.0)
.591
(15.02) .126
(3.22)
Dia

.787
(20.0)

B C E

.215 (5.47)

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