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ES 330 Electronics II Homework 04: Solutions

This document contains 5 homework problems related to electronics circuits. Problem 1 involves calculating DC quantities for a FET amplifier, including drain current, drain-source voltage, transconductance, and voltage gain. Problem 2 involves calculating characteristics such as transconductance, input resistance, and emitter resistance for a bipolar transistor biased at different collector currents. Problem 3 involves determining the required collector current and minimum current gain for a bipolar amplifier with given transconductance and input resistance requirements. Problem 4 involves calculating peak-to-peak values of base-emitter voltage and base current given other circuit parameters and an output voltage for a bipolar amplifier. Problem 5 involves deriving expressions for input resistance and voltage gain ratio for an emitter

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163 views5 pages

ES 330 Electronics II Homework 04: Solutions

This document contains 5 homework problems related to electronics circuits. Problem 1 involves calculating DC quantities for a FET amplifier, including drain current, drain-source voltage, transconductance, and voltage gain. Problem 2 involves calculating characteristics such as transconductance, input resistance, and emitter resistance for a bipolar transistor biased at different collector currents. Problem 3 involves determining the required collector current and minimum current gain for a bipolar amplifier with given transconductance and input resistance requirements. Problem 4 involves calculating peak-to-peak values of base-emitter voltage and base current given other circuit parameters and an output voltage for a bipolar amplifier. Problem 5 involves deriving expressions for input resistance and voltage gain ratio for an emitter

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We take content rights seriously. If you suspect this is your content, claim it here.
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Name ____________Solutions____________

ES 330 Electronics II Homework 04


(Fall 2017 – Due Wednesday, September 27, 2017)

Problem 1
Consider the FET amplifier of Fig. 7.10 for the case of Vt =0.4 V, kn = 5 mA/V2, VGS =0.6
V, VDD = 1.8 V and RD = 10 k. [Assume infinite output resistance r0.]

(a) Find the DC quantities ID and VDS.


5   0.2 
2
1 1
I D  kn VGS  Vt    5   0.6  0.4    0.1 mA 
2 2

2 2 2
and VDS  VCC  I D RD  1.8  (0.1)10  1.8  1.0  0.8 volt 

(b) Calculate the value of gm at this bias point.

g m  kn VGS  Vt   5   0.2   1.0 mA/V


2I D 2(0.1)
or you can use g m    1.0 mA/V 
VGS  Vt  0.2
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(c) Calculate the voltage gain.
V
The voltage gain AV   g m RD  110  10 
V

Problem 2
A bipolar transistor with current gain  = 100 is biased to operate at a DC collector
current of 0.5 mA. Find the values of transconductance gm, and resistances r and re.

Using I C = 0.5 mA,


IC 0.5 mA
Transconductance g m    20 mA/V = 0.02 A/V 
VTH 0.025 mV
 100
Base input resistance r    5000  
gm 0.02 A/V
 0.990
Emitter junction resistance re    49.5   50  
gm 0.02 A/V

Repeat this exercise for a collector current of 50 microamperes.

Using I C = 0.05 mA = 50 μA,


IC 0.05 mA
Transconductance g m    2.0 mA/V = 0.002 A/V 
VTH 0.025 mV
 100
Base input resistance r    50,000  
gm 0.002 A/V
 0.990
Emitter junction resistance re    495   500  
gm 0.002 A/V

Problem 3
A designer wants to design a bipolar amplifier with a transconductance gm of 30 mA/V
and a base input resistance of 3000 ohms or greater. What collector bias current IC
should the designer choose? What is the minimum value of current gain  that can be
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tolerated?
g m  30 mA/V and r  3,000 ; What is the minimum β allowed ?
IC V I
gm  and r  TH ; Hence, g m  r  C  β
VTH IB IB

30
mA

V

IC I
 C
VTH 0.025
 mA V    I C  0.75 mA 

g m  r  β  (30  3000)  β; so the minimum β is 90 or


 β  90 is the requirement for parameter β 

Problem 4
For the conceptual circuit shown below (this is an AC circuit – it ignores the DC biasing),
let RC = 2 k, gm = 50 mA/V and current gain  = 100. If a peak-to-peak output voltage
of 1 volt is measured at the collector node, what are the peak-to-peak values of the
base-emitter voltage vbe and base current ib?

We know RC  2000 , g m  50 mA/V, and β  100.


100
g m  r  β, thus, r   2000 
0.05
The voltage gain is AV   g m RC  (0.05)(2000)  100 V
V
Next, we are told that the output voltage v0 swing is peak-to-peak 1 volt.
At the output node, we have vout , pk  pk  vcemax  vcemin  1 volt
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For the output node, then vout , pk  pk  vcemax  vcemin  1 volt
Thus, with a voltage gain AV of -100 V , the base voltage swing is
V
vcemax  vcemin 1
vinput , pk  pk   volt = vbemax  vbemin  vbeinput
, pk  pk  0.01 volt 
AV 100
vbeinput
, pk  pk 0.01
And ib , pk  pk is given by ib, pk  pk  =  0.005 mA 
r 2000

Problem 5 Emitter Follower Stage


The circuit schematic shown below is an amplifier configuaration known as an “Emitter
follower.” The schematic omits the DC biasing details of this stage. The bipolar
transistor is a common-collector configuration.

Replace the bipolar transistor with its small-signal T equivalent circuit model and show
that the small-signal AC input resistance is
vi
rin  Rin  (   1)(re  Re )
ib .
Show that the ratio of output voltage to input voltage can be expressed as

vo Re

4

vi Re  r
Page
Solution:
On the next page we show the T-equivalent circuit substituted for the
transistor symbol in the Emitter Follower stage.

ib

+
vi _

rin +
_ ib
Re v 0  ib

+
vi _ re
iE +
_
Re v0

The input resistance of the entire stage is found by computing the ratio
of the applied input voltage (vi) divided by the base current ib.
vi
rin  where vi  (   1)ib re  (   1)ib Re ; re and Re are in series.
ib
vi (   1)ib re  (   1)ib Re
rin    (   1)(re  Re ) 
ib ib
The output voltage v0  I e Re and I e  (   1)ib ; v0  (   1)ib Re
v0 (   1)ib Re Re
Therefore,   
vi (   1)ib (re  Re ) (re  Re )
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