Q2 Q3 Q4+ Qs Q6 Q7 Qs ‘RM E; Exam Roll No. .. MINATION ‘Decennen-2016 —_ Subject: Computer Networks | Maximum Marks: 75 is compulsory. Select | luding Q.Nol whi, Q.No1 Answer the following ion from each unit (a) What are Transmicg on — oT (8x5=25) (b) Explain the data li n Impais rm {c) What is DNS? ae design iss Py in. — per outer, protocols. etween connection oriented jented and connection less (a) Explain TCP/IP m ‘UNIT-1 jodel and (b) What d coal i (b) lo you mean by Network ee woPfr with OSI Reference Model.(8.5) ls 4 (a) Differentiate between d: : t ata and signal: {b) Explain in details the types of Guided Media. “ae UNIT-IL (6.5) (a) Explain the concept of Delta M i x cor jodulation with example. (b) Given the digital data 11001110, transfer this data ‘using polar and biphase encoding schemes. 6) Explain PCM with the help of an example (12.5) ain Go Back algorithm with UNIT-IL What are sliding window protocols? Expl (12.5) the help of an example. (a) Explain the working of Link State Routing, Protocol with the help oe e example. (8-5) (b) An organization was granted the IP address 19° following question: j, To which class this IP address belongs the networ’ 1D? What is What is the notes 07 any two of ie 2.168.11.11, answer the 4) iii. iv. following (6.25x2=12:5) write short (a) E-mail (b) Private Key cryptography (c) Firewall _Q5. Q6. Q7. anno! a n Hartley ‘Ty ) Discuss the advance Portes of line cod heorem of channel @) Explain the vanguto8°S 24 disadvantageeng CxPin the signi a types of diversity. 2” Of QPSK over BPSK. icance. Compare the followin, F i expression of probability Rodulation schemes in detai J i) ASK TOT Sete os ij) FSK ae iii) BPSK a) Explain the generati ‘ation b) ae wave forme Of PPCM/Signal with block diagram. Show all ifferentiate between A- en A-law and u-law companding, 65) a) Explain the concept of eoatic of equelizers wes equalization in detail and what are different types b) ‘The signal {{t)= . (6.5) The signal 0-10 cox{Ont,Cos200n is sampled at @ rate of 250 i) Find the spectrum of resulting si ; : an impulse train. ing signal assuming sampling signal to be ii) Specify cut off frequency of ideal filter so as to recover f(t) from its sampled version. 6 a) Why slop overload distortion occurs in DM system? Explain how this distortion is avoided in ADM system, using neat ‘and clean diagram? (6.5) sys b) _ Consider a DMS with source probabilities (0.35, 0.15, 0.2, 0.5 and 0.25}, (6) 4) Determine Huffman code for this source, ii) Determine average length of these codes. iii) What is the efficiency of the code? Explain the concept of Inter symbol interference (sl) in detail : suggest various techniques to minimize the problem of Se om , a 3 ii ity bi i ications of these codes. (*-' b) What are hhigh density bipolar codes? Give applications oo. (12.5) Write short note® Scrum modulation Spread spectrum a Gaussian MIMO channel c) Linear Block codes akan‘vote Qi 2 Q3 Q5 rs Subject: on MER 2016 _ ao *Opticar py Attempt any five Testions oe wer communication Select one que: FG Ono 1 wk'™um Marks: 7 StS — Stion from aa which ts compulser?® unit fa) How is dispersion corm, ' techniques? PeNsated in pre Pot and Hyty (b) What is crosstalk in an g¢,> wi Tid compensation cause crosstalk? At are the ts mma, a Cale IF Merhaniam thar (c) Calculate the maximum . will happen if G. become Su” Of ® FPA it. +19 2 and p : (d) What are the minora 8nd R stays ato yo 7 MP 0 What homo-structured one? @ heters. stp. (ce) Explain the term ¢) phenomenon affect ANtAgeS of hirp as apy plied to a laser dinde the laser diode tranem ‘che ission «| UNIT 1 What do the terme a Es ton and transparent windows mean? List ™major causes of attenuation in a Multimode and single more optical fiber and explain their mechanisms. Also find the maximum transmission distance for a fiber link with an 0.3db/km if the power launched in s 3: attenuation of mW and the recewer sensitivity is 100 pW. (8) (c) Define bit rate. How is the performance of an optical communication link affected by increasing the bit rate? 8) i i ow ¢ PMD restrict {a) Define Birefringence and PMD in optical ae es ow does PMD at system performance in a Single Mode Opucal Fiber Expl { measures can i M phenomena in fiber optic links. What measu! oo My be eee this and how can SPM be useful lor oa applications. ‘UNIT- fu) s f a laser diode? " Ex orking principle of : vet eons i ee panel modes can a fabry Lipa ed toe gener = ae ee of is resonator is 0.3 mm and the operating = S90 a The width of gain curve 1s 9nm are SNR easitivity 5 BER, Q parameter, NEP, SNR and sens 7 the term: » G a os : ry of @ . ae anaes efficiency? Calculate the responsivi' meant by (b) What 15 rd fi F 80%. od 1.3 and 1.55ym if the quantum efficiency 1S al jode at : eee pin ae hotodiode more responsive at 1.55pm? Why is the p.T.0. NWycOc- Geson UNIT-IIT ; n-shifted fig fiber, dispersion 7 differen the conventional ersion-compensatin, 25 ta) Ditferentnte Ce ee cee and Gap SF), dispersion (c : ks as a dispersin, (b) Bae chirped Fiber Bragg grating wor! (7) compensating device Q7 onductor optica, (a) Explain the Principal of operation of ‘ cnesyra gain ofa Twa. amplifier. How does the gain of an FPA differ fr (b) Explain the process of a (8) mplification in an EDFA. Discuss the factor, on whi ich the gain of an EDFA depend (7) UNIT-IV Q8 (a) Explain the working of soliton transmitter in soliton baseq communication system. (8) (©) Consider a 0.8 um receiver with a silicon p-i-n Photodiode. Assume 29 MHz bandwidth, 65% quantum efficiency, 1 nA dark current, Q9 Explain any three of the following:- (a) DWDM system (b) Quantum w (C) OFDM system, (4) Quantum Limit ell Laser Diode eeeQi Q8 (a) Explain Leapfrog gy, 'b) What is the advay aa 5 nt: (c) Write notes on over te of Multipte j, (a) Discuss about the moP S8¥e metheg wack in filters, {8x5=25) , os (e] Explain the need of Winder APPlcatg sed filter design, . Ns of OTA’ (a) Find Z-transform of design. (b) Find inverse Z-tranet® S1@hal ‘transform usin x(n] = (0.2)" u tnyay Xz] = 1S thine method — a ; ies (Deering 4 SAE he Hc cn D y. ‘ar convolution of followin, 5 g sequence x[n] = 33 OSns4 0, Otherwise y= ae O 8 compare FMM Te migration issues from qpv4 to Ipve? Draw the var iscuss 1 ° era of each of the IPv4 and IPv6? )6 Write short note on the fotlowing (Attempt any tals: (6.25x2=12 rite sl (a) Secure gocket Layer (b) Firewalls (c) ISDN deniQ4 25, 26 )7 28 29 (a) (b) (b) (a) (b) What are the What i What en ermal strese 2Ssificat Discuss a 88 and its eiten Of What is che difference wes oceue tS during th channeling in PotWeen wet ont © Process : What are the aint. wet ons the e sing of ) i © diff ton im oxidation CYStal growths “eF(3) Explain ferent Plantat ion and wth? " Plasma chemi ieee ary oxidation, 4) mistry and ization in te @) S Properties, 2PFication. (3) Discuss and u 8. a from el explain TT (5) electronics the process Discuss the mol Brade silicon in di of making of sin ecular beam a ngle crystal silicon What are different Y. What are advantagesr “‘e) manufacturing and senna and chemical (6) . : i Discuss the reaction ne? Discuss a Pees in silicon wafer netics and process fe i. fei of vapor phase epitaxy. (6) i UNIT-1 Dicuee and explain the Deal and ( Gi idati iscuss and explain the orientation dex oxidation model. (6.8) D ib ion dependence of oxidation rate. (6) escribe the process of diffusion i : Eieieatine a aeae aco diffusion in semiconductors. What are different Explain the Ceara 6) process of ion implantation with di: with range theory and agram- (6.5) A UNIT-IIL Discuss the different printing techniques used in optical lithography? Explain. 6) What are the advantages of electron beam lithography over optical lithography? Discuss the electron lithography with diagram. (6.5) 4 ical li ny with flow Describe the various steps used in optical lithography _ diagram. 7 (68) ion. Discus the process of mask generati UNIT-IV i i 2 s and ‘i ical etching with advantages are physical and chemi 6) Comp' tages - és) isadvam 2 ive i ing with diagram. c disebe the process of reactive ion etching er est . oer i: ties of a metal to be used in metallizati’ are the desired proper (6) Whee? with diagram (6.5) proce gs of metallization WH . Discuss the proce’ ane cyQ2. Q3. Q4. Q5. Q6. Q7. Q8. Q9. Answer any 1 Wan a) What we! the fon “a9 ON, 4 oe laste me devine ©, Moore's 1, ¥ing ch ts Ea ce Beometrig gn e¥? ory, b) What do oes? What are li c) What are the a2" _ Mmitations impogeq O™e"8) . ver dis sed by small sizing o} OUs ty, SSij d) Describe ae denne UES of gio Per area in the + Explai © Variou Sean in in bri 'S source: e) Draw the cj ief, 8 of por f) | What do ee of 6T SRAM Cel : ™ e g) What is the ignite by clock ae rel hee Explain in brief, . ing & hy OW scaliny i is differ f rom wer d Tissipation in MOS ci Derive the voltage current equation SI the voltage tion for MO! r model and simulati ular i een FET. Explain the MOS spice the fe help of inverter circuit (12.5) Explain the vari ou: an INVERTER based lambde aceon ees ae vo steps. la design rule along with CMOS aman (12.5) Explain the VTC for CMOS i S inverter. Compare th cs enhancement & depletion load inverter. 7 . cart) Define Noise margin and its significance in the design of an inverter circuit. Derive the expression for rise time and fall time of MOS. (12.8) inverter. ic CMOS circuits? jc CMOS circuits faster than static ae ors, for the three What makes dynam! Compare the oes in terms of the number of transist eel different implementations of a full adder using ¥ i) static CMOS. ii) dynamic CMOS al designs. (12.5) pare Describe different clock distribution schemes for digi i te array design process. i during routing in gate array ‘ es) pire associ routers constrained via minimization i ove! two layers yyitable Explain ‘ . f Discus ; o dimensional compaction with S (12.5) e one dimensional 8s tw compar example: jaepxam Rott Noo) Beam Rott No «ND TERM EXAMINATION cmos STER [M.TECH.] Decemmer 2017 , MEVS-603__ (a) What is the effect of impurities like As, B, Pon the oxidation rate of Silicon’ a) @ o p) Write down four advantages of Ion Implantation over Diffusion. (what are different methods of reduce Channeling, (2) {a} Briefly explains RTA. 4) {c} What is Gettering Treatment? Discuss. (4) (j What are desired properties of Metallization for ICs. i) {g What is lon Enhanced Etching? co) ; Unit 2 Bxplain the CZ process in detail. (22.5) g3 Describe Basic transport Processes and reaction kinetics involved in Vapour Phase Epitaxy. (12.5) . Unit Q4 Describe the equipment used for ion implantation and evaluate the process in terms of uniformity and contamination. (12.5) Explain Kinetics of oxide growth mechanism during oxidation Process (12. using Deal-grove model. : Unit a Q6 Discuss the difference between contact, proximity and projection printing, lithography. In particular, describe the difference in resolution, aerurary. depth of field and line width. Q7 What are some of the potential advantages of X-Ray Lithography over electron-beam and UV Lithography? Discuss any Limitation. Explain X-ray lithography. (12.5) Unit-IV Q8 Discuss the difference and similarities between Sputter etching, lon Milling, Reactive Ion etching and Plasma etching. (12.5) Discuss properties of Etching process in detail. Explain plasma Chemistry in detail. (12.5)@ 8 gt 6 qr 08 Qo iF eempt any five questi 17 o a oe RS inet, ding Meet "St Tesh e i ~—e8tio, Q lax nology what is the effect of ; nf 70.1 whi Mt Man y @ silicon? ™PULIties 4 Sach hae my ine 75 ip) Write down four ady ke As, y ib : ant what are different mer 89 ofl c} . : met (01 ia Briefly explains RTA, thods of rede y s ‘ation @ he ay a Treatment Di . a. i , What is Ion Bane erties of cea te i iced Etch; lize 4) tchings “Mization for io, ot gxplain the CZ process in deta! Hd pescribe Basic transport p, mei pe TOCESSES and reaction 1: action kinetics involved in 7 equi ¢ escribe the equipment us, ; - *, ed ion i process in terms of uniformity = ae plantatic d contamination, om ad an explain Kinetics of oxide growth . 7 = taps Kinetice of on fechanism during oxidation process 2. ' : Unit ae Discuss the difference between contact, proximity and projection printing lithography. In particular, describe the diff i i seat eld and ine with difference in resolution, accuracy, (12.5) What are some of the potential advantages of X-Ray Lithography over electron-beam and UV Lithography? Discuss any Limitation. Explain X-ray lithography. (12.8) Unit-IV Discuss the difference and similarities between Sputter etching, lon Milling, Reactive Ion etching and Plasma etching, (12.5) Discuss properties of Etching process in detail. Explain ae Chemistry in detail. erie@ Q3 4 % ding 9 B80. whee CCH uni ch ts explain briefly:- @) MOS behavior unde, write down on chi, .°*temat y: : Chip clock qe! biasin, {¢) Derive an expression distripy® compulsory. NR Conditi jnverter. for tibution geqaition. (Sx5~25) hich SWitching ome. On which concept g, " wer di application and advanechemitt Ssipation in cmos (c) Explain the working of o08 Of the eet circuit : SF CMOS tran great. Works. Also write Smission gate UNIT ite down mai: (a) write main proceggi Inverter. Also show ee Steps involved j diagrams. Se steps with tho We fabrication of cmos (vp) Compute the thresho . the help of cross-sectional parameters are give; vroate fot (6.5) = n, VTo=- PMOS transistor, Folle VSB=-2.5V, oF=0.3V, OAV, body effect coefficient (6) (a) For each of the following conditic i i ions, identify the Tegion of operation an MOS transistor. Assume and calculate the drain ; k-0.5 mA/V2, VI=1v. ne Ios in (i) VGS=2.5, VDS=5, VSB=0 (i) VGS=2.5, VDS=1, VSB=0, (iii) VGS=0.5, VDS=5, VSB=0, © b) An enhancement Cy . 7 ( (b) ee type NMOS transistor is fabricated with the following Vz, =0.8V, 7=0.2V'", 2=0.05V", QgF}=058V, y,0C,, =20u4. The driving capability of transistor is 0.24mA when biasing with Vg=2.8V, Vd=5V, Vs=1V, and VB=OV. Calculate the W/L ratio of the transistor. (6.8) UNIT-IL Consider the CMOS inverter with the following parameters- NMOS:V,,, =0.6V HaCox = 60uA/V? (WIL), =8 a : =12 PMOS :Vyy =-0-V HyCox = asuAlv? (WIL), The power supply voltage is 3.3V. Find out: s a) Noise Margins . « ) Logic Threshold of the circuit on Fi () Maximum and minimum output voltage 7 . : oe using accurate differential equation met (a) Calculate the fall time the circuit shown below. Pf._— C21 « fabricated using 0.5 Um techno, ip wa’ itan: ie ow Wh; chip arasitic/load ees Set ate ie 20 Whigg 2 08Y late total di i tr, . pA Mees. The i 400MHz. Calcu atta ae Power /Hine hagy 108 steaque ney ees are Switching Aisgin Hock ag 50 i Sesunin UNIT-I a) : function i ¢ following Boolean function in (Assume. : a implement available): emep, oo MN semale Bec(AtB) Gate. 6 aA. smission : ) ) CMOS Tater entary CMOS logic. ft pully comp! funetion F=AD+E)+BC is imptem, The Boo! tary CMOS logic. Find out the Eular pat, to oye fy mplemen! lement this circuit. Ptimizg sy tayout area £0 iP “ete i ion of 6-transi Gy : d and write operation of ransistor g) i gr Bxplin ie taken to set the size of transistors to avo Cel, Whey care shor read cycle? ® the tg data during rea 88 of UNIT-IV (ay i is (OS logic is based ‘The operation of dynamic CM( on Precharge. 8 loge. Explain the logic with the help of example of edge — mein (2 Waite short notes on any two of the following;- (6.2804 th (@] Draw simple circuit for on chip Input Pad to * 0. 12; outside the chip, “ake input signal ge (b) Working of Carry Select Adder. (¢) Make the transistor level diagram of clocked N, (| Define hirarchy, regularity, : AND based SR La Wstehip design.” MOdularity and locality witk referenee Se TeenGive ‘short answers: (a) Differentiate bet, ) What is order time co, (i) Ofn) OF growth? Ror mPlexity and a) OF the foll Space coy i) O(logn) Owing (ii) (2) (iv) O(nlogn) (v) Ofna) (c) What are random; ized algori (d) What do you u; ‘Sorithms? Why (c) What character otStand by Divide ant oY Ore needed, cteristic Conquer method give example. ics m; lakes the Problem fall in the class NP. (3x5=15) @ mplexity, @owth fanetion, draw graph: Q2 (a) Elaborate asymptotic Notations with examples. (b) Use recursion tr ee to i . reece determine the asymptotic upper bound on the (6+6) T(n)=3T(n/2)+n 23 (a) Explain the difference between decision problem and optimization problems. (b) Find the optimal parenthesization of a matrix chain product whose sequence of dimension is 5,4, 6,2,7. (6+6) Explain Prims algorithm and prove that it always yields a minimum 4 (a) anning tree. Give algorithm. (b) Explain P, NP, NP-hard and NP-complete classes. (66) 5 (a) Write the algorithm for depth-first search and solve it for the following, (a) graphs. @ 66 ovE node is(24 : ms? Elaborate an g Approximation algorith: ee ms AP PFORI mag eee eaveiineteieeae probler algorithm for (rg, low maximization Ford-Fulkerson method for flow maxim Ee ote reciteien maee presents a network. Assuming § ig . Qe The table given below rer a 0) ind Tio the sink, find the following. : and T is the s (1) Network graph (2) Maximum flow of the network (4+) 7 (a) What is a 0/1 Knapsack problem. § ‘olve the followi, Programming given the maximum cap; ng using 5 acity of the knapsack igs mami 28 Write short notes on any two;- (a) Bitonic Sorting network (b) Greedy algorithm (c) DFT and FFT (d) Task Scheduling Problem heb neQ2 Q3 Q4 Q5 Q6 Q7 (b) Discus m various divers! (c) What sy ave Sity technignes UNB Di t is the chnigue “SRE Diversity ifference tae’ ain advan tec! 3. Also name echniques. Also UNIT-1 Derive an expression system. for Signs . Also compare ignal to Quantization noise ratio in a PCM PCM with DPCM. (10) Explain th: rence betwe ni form quantizer © differer qui en uniform and non-unifc What are th ie advant: ; companding. ‘ages of Companding? Discuss a-Law and p-law (10) UNIT-IL With the help of block diagrams, explain the transmitte and receive : . structure of GMSK system. : _ . (10) . Explain in detail the principle and operation of Phase Locked Loop. Also obtain an expression for Probability of error in M-ary PSK. (10) UNIT-IIL in detail different types of (10) With the help of block of diagrams, explain Equalizers. | piscine ae mata sytem Wi ae 00) UNIT-IV i ‘se yuences- ens as a : va write detailed notes on the following:- (2x5=10) a Turbo Ciecoding algorithm ek ™Subject: noe MBER 2016 _ ject; OPtoetectron; neludin, Maxtmum Marks; 66 Mestion Fro, - Q.no.1 which is computsory. it. I. Qi (a) List various compare thi (b) Differentiate 5) commui (co) Differentisee betwen” these (d) Differentiate “{ween WDM, cw, ee retSMission yx cir features “INows tse M optical con «tween. int mmunication and ication. 4 fermodal and intra modal SARL minimised N° dispersion in opsica betwee; and DWDM syste semicondy, = direct ba, na ctors. Compare their features Bap and indirect band gap (Sx4=20) Q2 (a) Draw block Giagram for an Vnitt function of each mae ifferee ce! Communication link also de il techniques h block, Different rect moda the ws Hate between direct and indirect modulating Ast various ady, i i wireless systema M8 disadvantages. of Optical communication a (5) Q3 Explain the following terms: s (a) Cutoff Wavelength (2.5x4=10) (b) Mode field diameter (c) LP modes and their applications (a) Numerical aperture Unit-It Q4 Explain the following terms: (a) What are the attenuation be minimized, ; a (b) Differentiate between linear and nonlinear scattering eee . impairment can be minimized in optical communication systems {5x2=10) and their causes in optical fibers, how these can i i ion flattered fibers. How Q5 (a) Draw structure of dispersion eanes fee eee jattere a dispersion is managed in long hau Gr eae (b) What is PMD and their causes : minimized? Unit-IL a i da detector. i i ood optical source an: i (5 a) List he desirable propery of od rs es cman and comp: oe types with their applications:(5x2=1 writ otes on their construction details, he n 7 ite short not Q (a) Semiconductor lasers (b) APD uw . {/ SONET ene: iso calculate the transmission rate . aw structure of “e es oc 768 at rious types of amplifiers used in optical communicate ‘is explain vi 5 s of (b) List and © their working principle. _ . H OCDMA, also explain features and appl i (a) Draw block diagram for 6 Q . i do they operate? a, ion of optical grating? How the function of op (b) What are ak aaE aI D