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J5304D Fairchild 2005

This document provides information on the FJD5304D high voltage fast switching transistor. It features a built-in free wheeling diode, wide safe operating area, small variance in storage time, and is suitable for electronic ballast applications. The document lists maximum ratings, electrical characteristics, and typical performance curves for parameters such as collector-emitter breakdown voltage, current gain, saturation voltages, and switching times.

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0% found this document useful (0 votes)
441 views6 pages

J5304D Fairchild 2005

This document provides information on the FJD5304D high voltage fast switching transistor. It features a built-in free wheeling diode, wide safe operating area, small variance in storage time, and is suitable for electronic ballast applications. The document lists maximum ratings, electrical characteristics, and typical performance curves for parameters such as collector-emitter breakdown voltage, current gain, saturation voltages, and switching times.

Uploaded by

Péricles Rangel
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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FJD5304D High Voltage Fast Switching Transistor

FJD5304D
High Voltage Fast Switching Transistor

Features
• Built-in Free Wheeling Diode
• Wide Safe Operating Area
• Small Variance in Storage Time
• Suitable for Electronic Ballast Application

Equivalent Circuit

1 D-PACK
1. Base 2. Collector 3. Emitter E

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter Value Units


VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 12 V
IC Collector Current (DC) 4 A
ICP * Collector Current (Pulse) 8 A
IB Base Current (DC) 2 A
IBP * Base Current (Pulse) 4 A
PC Collector Dissipation (TC = 25°C) 30 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed

Package Marking and Ordering Information


Device Marking Device Package Reel Size Tape Width Quantity
J5304D FJD5304DTM D-PAK 13” Dia - 2500
J5304D FJD5304DTF D-PAK 13” Dia - 2000

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com


FJD5304D Rev. A
FJD5304D High Voltage Fast Switching Transistor
Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max Units


BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 700 V
BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V
BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 12 V
ICES Collector Cut-off Current VCB = 700V, IE = 0 100 µA
ICEO Collector Cut-off Current VCB = 400V, IB = 0 250 µA
IEBO Emitter Cut-off Current VEB = 12V, IC = 0 1 mA
hFE DC Current Gain VCE = 5V, IC = 10mA 10
VCE = 5V, IC = 2.0A 8 40
VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A 0.7 V
IC = 1.0A, IB = 0.2A 1.0 V
IC = 2.5A, IB = 0.5A 1.5 V
VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A 1.1 V
IC = 1.0A, IB = 0.2A 1.2 V
IC = 2.5A, IB = 0.5A 1.3 V
tSTG Storage Time VCLAMP=200V, IC=2.0A 0.6 µs
tF Fall Time IB1=0.4A, VBE(off)=-5V, L=200µH 0.1 µs
tSTG Storage Time VCC=250V, IC=2.0A 2.9 µs
tF Fall Time IB1=0.4A, IB2=-0.4A, TP=30µs 0.2 µs

2 www.fairchildsemi.com
FJD5304D Rev. A
FJD5304D High Voltage Fast Switching Transistor
Typical Performance Characteristics

Figure 1. Static Characterstic Figure 2. DC Current Gain

4.0 100

IB=300mA
3.5 o
TC=125 C
IC [A], COLLECTOR CURRENT

hFE, DC CURRENT GAIN


3.0
IB=150mA
2.5 o
IB=100mA TC= - 25 C o
TC=25 C
2.0 10

1.5 IB=50mA

1.0

0.5

0.0 1
0 2 4 6 8 10 12 0.01 0.1 1 10
VCE [V]. COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage

10 10
IC = 5 IB IC = 5 IB
VCE(sat) [V], SATURATION VOLTAGE

VBE(sat) [V], SATURATION VOLTAGE

o
TC=125 C

1
o
TC=25 C
o
1 TC= - 25 C
o
TC= - 25 C
0.1 o
o TC=25 C
TC=125 C

0.01 0.1
0.01 0.1 1 10 0.01 0.1 1 10
IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT

Figure 5. Resistive Load Switching Time Figure 6. Forward Biased Safe Operating Area

10 100

tSTG
tSTG & tF [µs], SWITCHING TIME

IC [A], COLLECTOR CURRENT

10
Pulse IC_MAX

1 1µs
10µs
DC IC_MAX

1
1ms
tF
0.1

0.1

VCC=250V TC = 25 C
o

IC= 5 IB1= - 5 IB2 Single Pulse


0.01 0.01
0.1 1 10 1 10 100 1000
IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE

3 www.fairchildsemi.com
FJD5304D Rev. A
FJD5304D High Voltage Fast Switching Transistor
Typical Performance Characteristics (Continued)

Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating Curve

PC [W], COLLECTOR POWER DISSIPATION


10

9
Vcc=50V, L = 1mH
IB1=1A, IB2 = -1A
IC [A], COLLECTOR CURRENT

8 40

4 20

0 0
0 100 200 300 400 500 600 700 800 900 1000 0 25 50 75 100 125 150
o
VCE [V], COLLECTOR-EMITTER VOLTAGE TC [ C], CASE TEMPERATURE

4 www.fairchildsemi.com
FJD5304D Rev. A
FJD5304D High Voltage Fast Switching Transistor
Mechanical Dimensions

D-PAK

Dimensions in Millimeters

5 www.fairchildsemi.com
FJD5304D Rev. A
FJD5304D High Voltage Fast Switching Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™ FAST® ISOPLANAR™ Power247™ Stealth™
ActiveArray™ FASTr™ LittleFET™ PowerEdge™ SuperFET™
Bottomless™ FPS™ MICROCOUPLER™ PowerSaver™ SuperSOT™-3
CoolFET™ FRFET™ MicroFET™ PowerTrench® SuperSOT™-6
CROSSVOLT™ GlobalOptoisolator™ MicroPak™ QFET® SuperSOT™-8
DOME™ GTO™ MICROWIRE™ QS™ SyncFET™
EcoSPARK™ HiSeC™ MSX™ QT Optoelectronics™ TinyLogic®
E2CMOS™ I2C™ MSXPro™ Quiet Series™ TINYOPTO™
EnSigna™ i-Lo™ OCX™ RapidConfigure™ TruTranslation™
FACT™ ImpliedDisconnect™ OCXPro™ RapidConnect™ UHC™
FACT Quiet Series™ OPTOLOGIC® µSerDes™ UltraFET®
OPTOPLANAR™ SILENT SWITCHER® VCX™
Across the board. Around the world.™
PACMAN™ SMART START™
The Power Franchise®
POP™ SPM™
Programmable Active Droop™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, 2. A critical component is any component of a life support device
(a) are intended for surgical implant into the body, or (b) support or system whose failure to perform can be reasonably expected
or sustain life, or (c) whose failure to perform when properly used to cause the failure of the life support device or system, or to
in accordance with instructions for use provided in the labeling, affect its safety or effectiveness.
can be reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS


Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I13

6 www.fairchildsemi.com
FJD5304D Rev. A

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