FJD5304D High Voltage Fast Switching Transistor
FJD5304D
High Voltage Fast Switching Transistor
Features
• Built-in Free Wheeling Diode
• Wide Safe Operating Area
• Small Variance in Storage Time
• Suitable for Electronic Ballast Application
Equivalent Circuit
1 D-PACK
1. Base 2. Collector 3. Emitter E
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 12 V
IC Collector Current (DC) 4 A
ICP * Collector Current (Pulse) 8 A
IB Base Current (DC) 2 A
IBP * Base Current (Pulse) 4 A
PC Collector Dissipation (TC = 25°C) 30 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
J5304D FJD5304DTM D-PAK 13” Dia - 2500
J5304D FJD5304DTF D-PAK 13” Dia - 2000
©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FJD5304D Rev. A
FJD5304D High Voltage Fast Switching Transistor
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Typ. Max Units
BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 700 V
BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V
BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 12 V
ICES Collector Cut-off Current VCB = 700V, IE = 0 100 µA
ICEO Collector Cut-off Current VCB = 400V, IB = 0 250 µA
IEBO Emitter Cut-off Current VEB = 12V, IC = 0 1 mA
hFE DC Current Gain VCE = 5V, IC = 10mA 10
VCE = 5V, IC = 2.0A 8 40
VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A 0.7 V
IC = 1.0A, IB = 0.2A 1.0 V
IC = 2.5A, IB = 0.5A 1.5 V
VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A 1.1 V
IC = 1.0A, IB = 0.2A 1.2 V
IC = 2.5A, IB = 0.5A 1.3 V
tSTG Storage Time VCLAMP=200V, IC=2.0A 0.6 µs
tF Fall Time IB1=0.4A, VBE(off)=-5V, L=200µH 0.1 µs
tSTG Storage Time VCC=250V, IC=2.0A 2.9 µs
tF Fall Time IB1=0.4A, IB2=-0.4A, TP=30µs 0.2 µs
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FJD5304D Rev. A
FJD5304D High Voltage Fast Switching Transistor
Typical Performance Characteristics
Figure 1. Static Characterstic Figure 2. DC Current Gain
4.0 100
IB=300mA
3.5 o
TC=125 C
IC [A], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
3.0
IB=150mA
2.5 o
IB=100mA TC= - 25 C o
TC=25 C
2.0 10
1.5 IB=50mA
1.0
0.5
0.0 1
0 2 4 6 8 10 12 0.01 0.1 1 10
VCE [V]. COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
10 10
IC = 5 IB IC = 5 IB
VCE(sat) [V], SATURATION VOLTAGE
VBE(sat) [V], SATURATION VOLTAGE
o
TC=125 C
1
o
TC=25 C
o
1 TC= - 25 C
o
TC= - 25 C
0.1 o
o TC=25 C
TC=125 C
0.01 0.1
0.01 0.1 1 10 0.01 0.1 1 10
IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching Time Figure 6. Forward Biased Safe Operating Area
10 100
tSTG
tSTG & tF [µs], SWITCHING TIME
IC [A], COLLECTOR CURRENT
10
Pulse IC_MAX
1 1µs
10µs
DC IC_MAX
1
1ms
tF
0.1
0.1
VCC=250V TC = 25 C
o
IC= 5 IB1= - 5 IB2 Single Pulse
0.01 0.01
0.1 1 10 1 10 100 1000
IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE
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FJD5304D Rev. A
FJD5304D High Voltage Fast Switching Transistor
Typical Performance Characteristics (Continued)
Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating Curve
PC [W], COLLECTOR POWER DISSIPATION
10
9
Vcc=50V, L = 1mH
IB1=1A, IB2 = -1A
IC [A], COLLECTOR CURRENT
8 40
4 20
0 0
0 100 200 300 400 500 600 700 800 900 1000 0 25 50 75 100 125 150
o
VCE [V], COLLECTOR-EMITTER VOLTAGE TC [ C], CASE TEMPERATURE
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FJD5304D Rev. A
FJD5304D High Voltage Fast Switching Transistor
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
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FJD5304D Rev. A
FJD5304D High Voltage Fast Switching Transistor
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13
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FJD5304D Rev. A