ACT102H-600D

8
SO AC Thyristor power switch
20 August 2014 Product data sheet

1. General description
An AC Thyristor power switch with very high noise immunity and over-voltage protection
configured for negative gate triggering in a SOT96-1 (SO8) small surface-mountable
plastic package

2. Features and benefits

• Exclusive negative gate triggering
• Full cycle AC conduction
• High noise immunity
• Remote gate separates the gate driver from the effects of the load current
• Surface-mountable package
• Very sensitive gate for lowest gate trigger current
• Safe clamping of low energy over-voltage transients
• Self-protective turn-on during high energy voltage transients

3. Applications
• Fan motor circuits
• Pump motor circuits
• Lower-power highly inductive, resistive and safety loads

4. Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off- - - 600 V
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; - - 8 A
state current tp = 20 ms; Fig. 3; Fig. 4

IT(RMS) RMS on-state current full sine wave; Tamb ≤ 100 °C; Fig. 1; - - 0.2 A
Fig. 2
VPP peak pulse voltage Tj ≤ 25 °C; non-repetitive, off-state; - - 2 kV
Fig. 5
Static characteristics
IGT gate trigger current VD = 12 V; IT = 100 mA; LD+ G-; 0.5 - 5 mA
Tj = 25 °C; Fig. 7

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NXP Semiconductors ACT102H-600D
AC Thyristor power switch

Symbol Parameter Conditions Min Typ Max Unit

VD = 12 V; IT = 100 mA; LD- G-; 0.5 - 5 mA
Tj = 25 °C; Fig. 7

VCL clamping voltage ICL = 0.1 mA; tp = 1 ms; Tj ≤ 125 °C 650 - - V

5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 n.c. not connected 8 5 LD

2 LD Load
G
3 n.c. not connected
CM
4 n.c. not connected 1 4 001aaj924

5 G Gate SO8 (SOT96-1)

6 CM Common
7 CM Common
8 n.c. not connected

6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
ACT102H-600D SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

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AC Thyristor power switch

7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 600 V

IT(RMS) RMS on-state current full sine wave; Tamb ≤ 100 °C; Fig. 1; - 0.2 A
Fig. 2
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C; - 8.8 A
current tp = 16.7 ms

full sine wave; Tj(init) = 25 °C; - 8 A

tp = 20 ms; Fig. 3; Fig. 4
2
I t I2t for fusing tp = 10 ms; SIN - 0.31 A s
2

dIT/dt rate of rise of on-state current IT = 1 A; IG = 20 mA; dIG/dt = 0.2 A/µs - 50 A/µs

IGM peak gate current t = 20 μs - 1 A

PGM peak gate power - 2 W

PG(AV) average gate power over any 20 ms period - 0.1 W

Tstg storage temperature -40 150 °C

Tj junction temperature - 125 °C

VPP peak pulse voltage Tj ≤ 25 °C; non-repetitive, off-state; - 2 kV

Fig. 5

003aaf739
0.20
Ptot
(W) α α = 180°
0.16

0.12

0.08

0.04

0
0 0.04 0.08 0.12 0.16 0.20
IT(RMS) (A)

α = conduction angle
Fig. 1. Total power dissipation as a function of RMS on-state current; maximum values

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Product data sheet 20 August 2014 3 / 14

NXP Semiconductors ACT102H-600D
AC Thyristor power switch

003aaf740
0.24
IT(RMS)
(A)
0.20

0.16

0.12

0.08

0.04

0
- 50 0 50 100 150
Ta (°C)

Fig. 2. RMS on-state current as a function of solder point temperature; maximum values
003aac804
10
ITSM
(A)
8

4
IT ITSM

t
2
1/f
Tj(init) = 25 °C max
0
1 10 102 number of cycles 103

f = 50 Hz
Fig. 3. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values

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NXP Semiconductors ACT102H-600D
AC Thyristor power switch

003aaf756
103
IT ITSM
ITSM
(A) t

tp
102
Tj(init) = 25 °C max

10

1
10- 5 10- 4 10- 3 10- 2 10- 1
tp (s)

tp ≤ 20 ms
Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values
IEC 61000-4-5 Standards
Surge Generator
Open Circuit Voltage
1.2 µs/50 µs waveform
RGen R L

2Ω 150 Ω 5 µH
RG
Load Model DUT
Surge pulse 220 Ω

003aad077

Fig. 5. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5

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NXP Semiconductors ACT102H-600D
AC Thyristor power switch

8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance full cycle; Fig. 6 - 150 - K/W
from junction to
ambient

003aaf741
103

Zth(j-a)
(K/W)

102

10 P

tp t
1
10- 3 10- 2 10- 1 1 10 102 103
tp (s)

Fig. 6. Transient thermal impedance from junction to lead as a function of pulse width

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AC Thyristor power switch

9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD = 12 V; IT = 100 mA; LD+ G-; 0.5 - 5 mA
Tj = 25 °C; Fig. 7

VD = 12 V; IT = 100 mA; LD- G-; 0.5 - 5 mA

Tj = 25 °C; Fig. 7

IL latching current VD = 12 V; IG = 100 mA; LD+ G-; - - 25 mA

Tj = 25 °C; Fig. 8

VD = 12 V; IG = 100 mA; LD- G-; - - 25 mA

Tj = 25 °C; Fig. 8

IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 20 mA

VT on-state voltage IT = 0.3 A; Tj = 25 °C; Fig. 10 - - 1.2 V

VGT gate trigger voltage VD = 400 V; IT = 100 mA; Tj = 125 °C 0.15 - - V

VD = 12 V; IT = 100 mA; Tj = 25 °C - - 0.9 V

ID off-state current VD = 600 V; Tj = 25 °C - - 2 µA

VD = 600 V; Tj = 125 °C - - 0.2 mA

VCL clamping voltage ICL = 0.1 mA; tp = 1 ms; Tj ≤ 125 °C 650 - - V

Dynamic charateristics
dVD/dt rate of rise of off-state VDM = 402 V; Tj = 125 °C; (VDM = 67% 300 - - V/µs
voltage of VDRM); exponential waveform; gate
open circuit; Fig. 11
dIcom/dt rate of change of VD = 400 V; Tj = 125 °C; IT(RMS) 1 A; 0.15 - - A/ms
commutating current dVcom/dt = 15 V/µs; gate open circuit;
Fig. 12; Fig. 13

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AC Thyristor power switch

003aac809 003aac811
3 3

IGT (1) IL
IGT(25°C) IL(25°C)

2 2
(2)

1 1

(2)

(1)
0 0
- 50 0 50 100 150 - 50 0 50 100 150
Tj (°C)
Tj (°C)
(1) LD+ G-
(2) LD- G- Fig. 8. Normalized latching current as a function of
junction temperature
Fig. 7. Normalized gate trigger current as a function of
junction temperature
003aac810 003aaf722
3 2.0
IT
IH (A)
IH(25°C)
1.5
2

1.0

1 (1) (2) (3)

0.5

0 0.0
- 50 0 50 100 150 0.0 0.5 1.0 1.5 2.0
Tj (°C) VT (V)

Fig. 9. Normalized holding current as a function of Vo = 0.758 V; Rs = 0.263 Ω

junction temperature (1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage

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AC Thyristor power switch

003aac813 003aac814
12 12
A
B
10 A
B

8 8

4 4

0 0
25 50 75 100 125 25 50 75 100 125
Tj (°C) Tj (°C)

A = dVD/dt at condition Tj °C A = dIcom/dt at condition Tj °C

B = dVD/dt at condition Tj [125] °C B = dIcom/dt at condition Tj [125] °C
Fig. 11. Normalized rate of rise of off-state voltage as a VD = 400 V
function of junction temperature Fig. 12. Normalized critical rate of rise of commutating
current as a function of junction temperature
003aac815
2.0
A [B]
A [spec]

1.5

1.0

0.5

0
10- 1 1 10 102
B (V/µs)

A [B] = dIcom/dt at condition B, dVcom/dt

A [spec] is the data sheet value for dIcom/dt
turn-off time is less than 20 ms
Fig. 13. Normalized critical rate of change of commutating current as a function of critical rate of change of
commutating voltage; minimum values

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AC Thyristor power switch

10. Package outline

SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

D E A
X

y HE v M A

8 5

Q
A2
(A 3) A
A1
pin 1 index
θ
Lp

1 4 L

e w M detail X
bp

0 2.5 5 mm
scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A
UNIT max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) θ

0.25 1.45 0.49 0.25 5.0 4.0 6.2 1.0 0.7 0.7
mm 1.75 0.25 1.27 1.05 0.25 0.25 0.1
0.10 1.25 0.36 0.19 4.8 3.8 5.8 0.4 0.6 0.3 8
o
o
0.010 0.057 0.019 0.0100 0.20 0.16 0.244 0.039 0.028 0.028 0
inches 0.069 0.01 0.05 0.041 0.01 0.01 0.004
0.004 0.049 0.014 0.0075 0.19 0.15 0.228 0.016 0.024 0.012

Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION

99-12-27
SOT96-1 076E03 MS-012
03-02-18

Fig. 14. Package outline SO8 (SOT96-1)

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NXP Semiconductors ACT102H-600D
AC Thyristor power switch

11. Soldering
5.50

0.60 (8×)

1.30

4.00 6.60 7.00

1.27 (6×)

solder lands
occupied area placement accuracy ± 0.25 Dimensions in mm sot096-1_fr

Fig. 15. Reflow soldering footprint for SO8 (SOT96-1)

1.20 (2×)

0.60 (6×) 0.3 (2×) enlarged solder land

1.30

4.00 6.60 7.00

1.27 (6×)

5.50
board direction

solder lands solder resist

occupied area placement accurracy ± 0.25 Dimensions in mm sot096-1_fw

Fig. 16. Wave soldering footprint for SO8 (SOT96-1)

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AC Thyristor power switch

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punitive, special or consequential damages (including - without limitation -
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[short] data the objective specification for product make changes to information published in this document, including without
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completing a design. inclusion and/or use of NXP Semiconductors products in such equipment or
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changed since this document was published and may differ in case of
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the Internet at URL http://www.nxp.com. product data given in the Limiting values and Characteristics sections of this
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Applications — Applications that are described herein for any of these

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representation or warranty that such applications will be suitable for the
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Product specification — The information and data provided in a Product Limiting values — Stress above one or more limiting values (as defined in
data sheet shall define the specification of the product as agreed between the Absolute Maximum Ratings System of IEC 60134) will cause permanent
NXP Semiconductors and its customer, unless NXP Semiconductors and damage to the device. Limiting values are stress ratings only and (proper)
customer have explicitly agreed otherwise in writing. In no event however, operation of the device at these or any other conditions above those
shall an agreement be valid in which the NXP Semiconductors product given in the Recommended operating conditions section (if present) or the
is deemed to offer functions and qualities beyond those described in the Characteristics sections of this document is not warranted. Constant or
Product data sheet. repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.

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responsibility for the content in this document if provided by an information
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or construed as an offer to sell products that is open for acceptance or the

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AC Thyristor power switch

grant, conveyance or implication of any license under any copyrights, patents

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NXP Semiconductors accepts no liability for inclusion and/or use of non-
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In the event that customer uses the product for design-in and use in
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12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-
CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight,
MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug,
TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

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AC Thyristor power switch

13. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Limiting values .......................................................3
8 Thermal characteristics .........................................6
9 Characteristics ....................................................... 7
10 Package outline ................................................... 10
11 Soldering .............................................................. 11
12 Legal information .................................................12
12.1 Data sheet status ............................................... 12
12.2 Definitions ...........................................................12
12.3 Disclaimers .........................................................12
12.4 Trademarks ........................................................ 13

© NXP Semiconductors N.V. 2014. All rights reserved

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 August 2014

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