Effective Use of Power Devices

Silicon Carbide Power Devices

Understanding & Application Examples Utilizing
the Merits

© 2017 ROHM Co.,Ltd.

 SiC Power Devices
Understanding & Application Examples Utilizing the Merits

Agenda

① What is SiC（Silicon Carbide) ?

② SiC-SBD（Schottky Barrier Diode）
③ SiC-MOSFET
④ Full SiC Module

© 2017 ROHM Co.,Ltd. P. 1

 SiC Power Devices
Understanding & Application Examples Utilizing the Merits

① What is SiC（Silicon Carbide） ?

• Major Semiconductor Materials
• Properties: Comparison with Si
• Background of Development
• Merits of SiC
• History of SiC Research
• Approaches to SiC Devices of ROHM

② SiC-SBD（Schottky Barrier Diode）

③ SiC-MOSFET
④ Full SiC Module

© 2017 ROHM Co.,Ltd. P. 2

 ① What is SiC?

SiC: Silicon Carbide

• IV-IV group compound semiconductors in
which Si and C bond 1-to-1
• Close-packed structures in which Si-C atom
pairs form unit layers
• Various polytypes exist

●Bonding strength is extremely high 3” 4H-SiC wafer

⇒thermally, chemically, mechanically stable

•Thermal stability: No liquid phase at ordinary temperatures, sublimation at 2000℃
•Mechanical stability: Mohs hardness (9.3) near that of diamond (10)
•Chemical stability: Inert in the presence of nearly all acids and alkalis

© 2017 ROHM Co.,Ltd. P. 3

 ① What is SiC? : Major Semiconductor Materials

Properties Si 4H-SiC GaAs GaN Application

Crystal Structure Diamond Hexagonal Zincblende Hexagonal

high temp.
operation,
Energy Gap : EG (eV) 1.12 3.26 3x 1.43 3.5
emission
wavelength
High frequency
Electron Mobility: μn (cm2/Vs) 1400 900 8500 1250
devices
Hole Mobility: μp (cm2/Vs) 600 100 400 200
Breakdown Field; EB (V/cm) x106 0.3 3 10x 0.4 3 Power devices
High heat
Thermal Conductivity (W/cmK) 1.5 4.9 3x 0.5 1.3
dissipation
Saturation Drift Velocity: High frequency
1 2.7 3x 2 2.7
vS (cm/s) x107 devices
Relative Dielectric Constant: εS 11.8 9.7 12.8 9.5
p, n Control Good Good Good Average
Thermal Oxide Good Good Behind Behind MOS structure

© 2017 ROHM Co.,Ltd. P. 4

 ① What is SiC? : Properties（Si vs SiC）

Properties Si 4H-SiC
Crystal Structure Diamond Hexagonal
Lattice Constant (Å) 5.43 a=3.09, c=10.08
Band Structure Indirect Indirect
Energy Gap : EG (eV) 1.12 3.26 3x
Electron Mobility : μn (cm2/Vs) 1400 900
Hole Mobility : μp (cm2/Vs) 600 100
Breakdown Field : EB (V/cm) x106 0.3 3 10x
Thermal Conductivity (W/cmK) 1.5 4.9 3x
Saturation Drift Velocity : vS (cm/s) x107 1 2.7 2x
Relative Dielectric Constant : εS 11.8 9.7
p, n Control Good Good
Thermal Oxide Good Good

SiC has excellent parameters which are important for power devices.

© 2017 ROHM Co.,Ltd. P. 5

 ① What is SiC? : Background of Development
Subtsation DC
AC AC
Power Transformer
transmission Power cable 6600V Home 100V 12～24V,
3 phase AC
AC Transmission Conversion
Transformation Home
105V Appliances

Factory

Convert to suitable
voltage/current at
Power Loss: 3 to 5% power supply of equipment
Power Loss: 5 to 10%

If SiC

Possible greatly to
Si SiC
reduce energy losses
Switching Excellent properties at power conversion
Loss beyond Si
85% processes
Reduction
Comparison IGBT Module with full SiC Module

© 2017 ROHM Co.,Ltd. P. 6

 ① What is SiC? : Merits of SiC
Low Downsizing of Module
Resistance
Si SiC

1
ー
10

Fast Downsizing of Peripherals

Operation
Si SiC 1
ー
10

High Temp Simplification of Cooling System

Operation
Si Water cooling
SiC pump Air cooling
heat sink
200℃ 250℃ 1
ー
250
ＶGS＝１８Ｖ
１６Ｖ
200 １４Ｖ

10
１２Ｖ
１０Ｖ
150
８Ｖ
６Ｖ
100 ４Ｖ
２Ｖ
０Ｖ
50

0
0 5 10 15 20

© 2017 ROHM Co.,Ltd. P. 7

 ① What is SiC? : History of SiC Research

Early stage of research, Application to semiconductor

Difficult to control single polytype devices has started in the 1980s

Application:
Abrasive 2 Breakthroughs
Covering material
Fireproof material

Schottky predicted Step control epi

outstanding properties <Homoepitaxial growth>
<Substrate>
Improved Rayleigh method
High voltage diode
1960 High voltage MOSFET
High quality substrate
1980
1990
2000
Blue LED

© 2017 ROHM Co.,Ltd. P. 8

 ① What is SiC? : ROHM’s Approaches
Established integrated production system for SiC
devices and started mass production of SiC-SBD
（Apr 2010, the first in Japan ）

Started mass production of SiC-MOSFET Started mass production of

（Dec 2010, the first in the world） full SiC power module （Mar 2012,
the first in the world）1200V 100A
Merged SiCrystal as SiC wafer manufacture
（Jul 2009)
2012
Introduced the mass production technique of
SiC epi by ROHM, Kyoto University and Tokyo Electron
（Jun 2007）
2010
SiC-MOSFET sample shipment
（Nov 2005) 2009 2015
Stared basic
experimentation
for SiC-MOSFET
2007 2011
Stared mass production of the
（Jun 2002）
2005 world’s first trench structure
SiC-MOSFET.
2002 2008 Developed the world Released full SiC power module
smallest Ron: sub- product (Jun 2015）
2006 Introduced the world 1mΩcm² ultra low loss
smallest Ron: 1.7mΩcm² SiC trench MOSFET
2004 SiC trench MOSFET （Dec 2011)
Introduced the （Sep 2008)
Developed world smallest Ron:
prototype of 3.1mΩcm² SiC-
SiC-MOSFET MOSFET （Mar 2006)
（Dec 2004）

© 2017 ROHM Co.,Ltd. P. 9

 SiC Power Devices
Understanding & Application Examples Utilizing the Merits

① What is SiC（Silicon Carbide） ?

② SiC-SBD（Schottky barrier diode）
•Positioning of SiC-SBD
•Comparison with Si-SBD
•Comparison with Si PN Diode
•The 2nd Generation SiC-SBD
•Merits Using SiC-SBD
•Comparison of Forward Characteristics
•Product Line-up of the 2nd Generation
SiC-SBD
•Adoption Example

③ SiC-MOSFET
④ Full SiC Module
© 2017 ROHM Co.,Ltd. P. 10
 ② SiC-SBD（Schottky barrier diode）

SiC-SBD 耐圧
Vr

PND
6.5kV

3.3kV
Anode Schottky electrode

PND, FRD
1.7kV

SBD
• Great
1.2kV reduction of
recovery loss
・リカバリロス
SiC n-epi • Downsizing
の大幅削減of
equipment
900V ・高周波化による
due to higher
機器の小型化
frequency
600V operation

SiC n+sub 400V

Producible
作製できるが
but few

SBD
Siに対しメリットが
100V merit
小さい領域 for Si

Cathode Higher Vｒ,

耐圧higher resistance
Si SiC

PND
（Raise Vf）
6.5kV
Minority carrier devices
少数キャリアデバイス
Low Ron but slow
：低オン抵抗だが低速
3.3kV
Majority carrier devices
PND, FRD

1.7kV 多数キャリアデバイス
Fast
：高速
SBD

1.2kV
・リカバリロス
の大幅削減
© 2017 ROHM Co.,Ltd. 900V ・高周波化による P. 11
機器の小型化
 ② SiC-SBD: Comparison with Si-SBD
Si Breakdown Field SiC Breakdown Field
0.3 MV/cm 3 MV/cm （10x of Si）
Anode Anode

Schottky junction Schottky junction

Electron Electron
n
n-

n+
substrate
Ohmic junction
Cathode

n+

Ohmic junction

Cathode

For achieving high voltage Si-SBD, thicker n- layer and low carrier density are needed.

Increase n- layer resistance and loss

© 2017 ROHM Co.,Ltd. P. 12

 ② SiC-SBD: Comparison with Si PN Diode

Anode Anode

Ohmic junction Schottky junction

p Anode Hol
e PN junction
Electron
Electron n

n- (i layer)
n+ substrate
Ohmic junction

Cathode

n emitter
n+ substrate
Ohmic junction

Cathode

Constructing PN diode with Si, as holds as minority carrier are injected into n- layer,
n- layer resistance becomes small.

© 2017 ROHM Co.,Ltd. P. 13

 ② SiC-SBD: Comparison with Si PN Diode
Si PIN Diode： Fast Rectifying Diodes（ex. FRD）
Forward Biased Reverse Biased
Anode Anode

Ohmic junction Ohmic junction

p Emitter Hol p Emitter
e PN junction PN接合
Electron Hol
e
n- (i layer) n- (i layer)

Transition to
reverse bias Electron

n Emitter n Emitter
n+ substrate n+ substrate
Ohmic junction Ohmic junction

Cathode Cathode

Due to sweep out many holes in n- layer to p layer and also sweep out may electrons to
n layer, the recovery time is long and the amount of recovery charge is large.
* Part of carrier disappears due to the life time.
© 2017 ROHM Co.,Ltd. P. 14
 ② SiC-SBD: Comparison with Si PN Diode
SiC Schottky Barrier Diode（SBD）

Forward Biased Reverse Biased

Anode Transition to Anode

reverse bias
Electron Electron
n n

n+ substrate
n+ substrate

Cathode Cathode

Only sweeping out a few electrons in n layer is enough, the recovery time is
short and the amount of recovery charge is small.

* Part of carrier disappears due to the life time.

© 2017 ROHM Co.,Ltd. P. 15

 ② SiC-SBD: Comparison with Si PN Diode

SiC Schottky Barrier Diode（SBD）

Si PN Diode
SiC-SBD

Time

Si PN diode has to sweep out accumulated carriers in n- layer when bias is reversed,
therefore, reverse current flows until they are disappeared.

Loss must occurs

© 2017 ROHM Co.,Ltd. P. 16

 ② SiC-SBD: Comparison with Si PN Diode
Si-FRD SiC-SBD
15 15
Temperature 10
Vr=400V
10
Vr=400V
Dependency
Forward Current: If (A)
5

Forward Current: If (A)

5
0 0
-5 -5
-10 -10
-15 -15
-20 -20
Si-FRD (RT) SiC-SBD (RT)
-25 Si-FRD (125℃) -25 SiC-SBD (125℃)
-30 -30
0 100 200 300 400 500 0 100 200 300 400 500
Time (nsec) Time (nsec)
30 30
If Dependency If=20A Vr=400V If=20A Vr=400V
20 Ta=25oC 20 Ta=25oC
Forward Current: If (A)

Forward Current: If (A)

If=10A If=10A
10 10
If=2.5A If=2.5A

0 0

-10 -10

-20 -20

-30 -30
0 100 200 300 400 500 0 100 200 300 400 500
Time (nsec) Time (nsec)

© 2017 ROHM Co.,Ltd. P. 17

 ② SiC-SBD: Comparison with Si PN Diode

As Si FRD has minority carrier injection, the

diffusion length of minority carrier increases
with temperature raise, then recovery time
at switching increases.

As SiC-SBD has no minority carrier injection,

the recovery time doesn’t increase with
temperature raise.

SiC-SBD is majority carrier device, therefore, the reverse current is small

and no temperature dependency.

© 2017 ROHM Co.,Ltd. P. 18

 ② SiC-SBD： Merits Using SiC-SBD

PFC Circuit SiC SBD Switching Wave Form

Reduce surge/noise
countermeasure 650V 12

10
parts No reverse recovery current
Vin
8
Vout 6
SiC-SBD

電流 ( A )
4

Current
2

Si MOSFET
-2

650V -4 Si-FRD
-6
0 20 40 60 80 100 120 140 160 180 200

Time
時間 ( nsec )

Circuit Size Image

20kHz
100kHz
Downsizing of
peripheral parts
• High efficiency
can be achieved • Low noise
by higher
frequency • Downsizing
operation

© 2017 ROHM Co.,Ltd. P. 19

 ② SiC-SBD: Comparison with Si PN Diode

Si-FRD SiC-SBD
Forward current

Forward current
(A)

(A)
Forward voltage (V) Forward voltage (V)

Due to high temperature, Fermi level Due to high temperature, lattice vibration
moves and then barrier height lowers, increases and mobility decreases,
therefore VF decreases. therefore, resistance raises.

Merit： Preventing thermal runaway because VF increases with temperature

raise in case that SiC-SBD is current controlled.

Demerit: As VF increases with temperature raise, so IFSM is less than Si-FRD.

© 2017 ROHM Co.,Ltd. P. 20

 ② SiC-SBD: Comparison of Forward Characteristics

ROHM’s 2nd Generation SiC-SBD Achieved lower VF

Forward Characteristics at 25℃ Forward Characteristics at 125℃
650V 10A

Company A

ROHM Company A
2G SBD ROHM
SCS210A 2G SBD
SCS210A

Company B
Company B

Company C
Company C

Note: These data are just reference based on ROHM’s evaluation result at the same conditions.
The characteristics above are not guaranteed by ROHM

© 2017 ROHM Co.,Ltd. P. 21

 ② SiC-SBD： Comparison of Forward Characteristics

ROHM’s 2nd Generation SiC-SBD Achieved lower VF

SiC-SBD Forward Characteristics

Note: These data are just reference based on ROHM’s evaluation result at the same conditions.
The characteristics above are not guaranteed by ROHM

© 2017 ROHM Co.,Ltd. P. 22

 ② SiC-SBD: ROHM’s 2nd Generation SiC-SBD

100
Ta=25℃

Switching Loss Reduction

trr (ns) trr (ns)

スイッチング時間 Si-FRD

SiC-SBD
2nd Generation
SiC-SBD
SiC-SBD
(ROHM 1G & Other
(ROHM 1G,CREE,Infineon)
10 company’s)
1 1.5 2 2.5
Rated VF (V)(V)
定格電圧Vf [IF=10A]
[If=10A]
Conduction Loss Reduction

Hold promise the lowest loss between power diodes (Si-FRDs and SiC-SBDs)

© 2017 ROHM Co.,Ltd. P. 23

 ② SiC-SBD：Product Line-up of the 2nd Generation

★: Automotive grade available

TO220AC TO220FM TO247 TO-263

(D2-PAK)
K

K A K A N/C A
A K A

650V 6A～20A 6A～20A 15A～40A 6A～20A

1200V 5A～20A 10A～40A

© 2017 ROHM Co.,Ltd. P. 24

 ② SiC-SBD: Product Line-up of the 2nd Generation

TO220AC TO220FM TO247 TO-263

(D2-PAK)

K A K A N/C A
A K A

650V 6A～20A 6A～20A 15A～40A 6A～20A

1200V 5A～20A － 10A～40A －

* Under developing 650V/100A products

* Under developing 1200V/50A products
* Under developing 1700V/10A to 50A products

© 2017 ROHM Co.,Ltd. P. 25

 ② SiC-SBD： Adoption Example in Automotive

PFC boost diode

SiC SBD 650V

Secondary side rectifying

SiC SBD 1200V

Automotive grade is available for ROHM’s SiC-SBDs (bare-chip,

TO-220AC and TO-247) and they have been adopted and considered
for on-board charging applications in the world.
© 2017 ROHM Co.,Ltd. P. 26
 ② SiC-SBD

SiC-SBD Summary

 Fast recovery
→ Reduce switching loss and noise

 Low VF （vs Si devices and competitor’s SiC-SBDs）

→ Reduce conduction loss

 ROHM’s SiC-SBD is being adopted for automotive

applications

© 2017 ROHM Co.,Ltd. P. 27

 SiC Power Devices
Understanding & Application Examples Utilizing the Merits

① What is SiC（Silicon Carbide） ?

② SiC-SBD（Schottky barrier diode）
③ SiC-MOSFET
•Positioning of SiC-MOSFET
•Major Power Devices form 600V to 2000V
•Performance Comparison of Power Transistors
•Internal Diode Characteristics
•Reliability of ROHM’s SiC-MOSFET
•Product Line-up
•Next Generation SiC-MOSFET
•Application Examples Utilizing the Merits
•Difference from Si-MOSFET
④ Full SiC Module
© 2017 ROHM Co.,Ltd. P. 28
 ③ SiC-MOSFET

SiC-MOSFET Vr
耐圧

IGBT
6.5kV
少数キャリアデバイス
3.3kV 耐圧 ：低オン抵抗だが低速

IGBT
6.5kV

MOSFET
• Great reduction of Minority carrier devices
多数キャリアデバイス
1.7kV ・ターンオフロス
turn off loss 少数キャリアデバイス
Low Ron but slow

IGBT
3.3kV • Downsizing
の大幅削減 of ：高速
：低オン抵抗だが低速
equipment
・高周波化による due to
1.2kV higher frequency Majority carrier devices

MOSFET
1.7kV 機器の小型化 多数キャリアデバイス
・ターンオフロス
operation Fast

IGBT
の大幅削減 ：高速
・高周波化による
SJ-MOSFET
900V 1.2kV 機器の小型化

•・チップ面積の削減
SJ-MOSFET
Reduction of chip size
MOSFET

900V
Great reduction of recovery loss
•・リカバリロスの大幅削減
600V ・チップ面積の削減
MOSFET

・リカバリロスの大幅削減
600V
Producible
作製できるが
400V 400V but few
作製できるが
Siに対し
Siに対し
merit
メリットが for
メリットが
100V Si小さい領域
小さい領域
100V
Si SiC
Si SiC
© 2017 ROHM Co.,Ltd. P. 29
 ③ SiC-MOSFET：600～2000V Power Devices

Diode Transistor Features

• High voltage is available
Si • Utilize conductivity
PN modulation to compensate
Minority IGBT Ron
(FRD) • Slow trr and tail current due
carrier
device to minority carrier
accumulation.

Si • Ron is a bit improved on SJ.

(MOSFET) • Fast but high Ron
Majority SJ-MOSFET • Large trr
carrier • Withstanding up to 900V
device

SiC • High voltage is available

• Low Ron of epi layer
Majority SBD MOSFET • Fast switching
carrier • High temp operation more
devices than 200℃

© 2017 ROHM Co.,Ltd. P. 30

 ③ SiC-MOSFET： Comparison of Power Transistors

Source Gate Anode Source Gate Anode Source Gate Source Gate
Si-SJ MOS
Si-DMOS
Anode

Metal
Metal Gate Metal Metal Metal Gate Metal
Metal Metal Gate Metal Metal Gate Metal
MetalMetal Metal Metal Metal Metal Metal
p n+ p+ n+
p p n+ p
p+ n+ p n+ pp+ n+ n+ p+ n+
p-well
JTE JTE p-well JTE p-well p-well

Si-IGBT
Si n-epi
n-epi n n-epi Si p n
n-epi Si n-epi SiC n-epi

Ron
Si n+sub
n+sub n+sub Si n+sub n+sub Si p+sub SiC n+sub
Metal
Metal Metal Metal Metal Metal Metal
Metal
Metal Metal Metal Metal
Metal Metal

Cathode
Drain Cathode Drain Cathode Drain Drain
SiC-DMOS
Si DMOS Si Super-Junction MOS Si IGBT SiC
DMOS Withstand Voltage Withstand Voltage Withstand Voltage
Withstand Voltage Withstand Voltage (V)

Ron of the present SiC is

5 to 10mΩcm2 because of
Ron Speed Ron Speed Ron Speed Ron Speed other resistances

＋Hi Temp operation

© 2017 ROHM Co.,Ltd. P. 31

 ③ SiC-MOSFET： Comparison with IGBT

Vds-Id Characteristics
Vd – Id 25℃ Vd – Id 150℃
25 ROHM 25
SiC MOSFET
1200V ROHM
Si SJMOS 20
20 SiC MOSFET
900V
1200V
15 15

Id (A)
Id (A)

Si SJMOS
10 900V
10

Si IGBT
5 5 Si IGBT
1200V
1200V

0 0
0 1 2 3 4 5 0 1 2 3 4 5
Vds (V) Vds (V)

Note: These data are just reference based on ROHM’s evaluation result at the same conditions.
The characteristics above are not guaranteed by ROHM

© 2017 ROHM Co.,Ltd. P. 32

 ③ SiC-MOSFET： Comparison with IGBT

Turn-off Loss
Vdd=400V、Ic=20A
Ta=25℃、Vgs=+18V/0V IGBT+FRD SCH2080KE(SiC-MOS+SBD)
100ns 100ns
Vge (5V/div) Vgs (5V/div)

Ic (5A/div) Vce (100V/div) Id (5A/div) Vds (100V/div)

Eoff
Eoff=890.2uJ 88% Reduced Eoff=109uJ

Tail current Tail current

Large Loss from tail current With high internal Rg, recommend
Become worth with high temp external Rg 0 to 5Ω for fast operation

Note: These data are just reference based on ROHM’s evaluation result at the same conditions.
The characteristics above are not guaranteed by ROHM
© 2017 ROHM Co.,Ltd. P. 33
 ③ SiC-MOSFET： Comparison with IGBT

Turn-on Loss
Vdd=400V、Ic=20A
Ta=25℃、Vgs=+18V/0V IGBT+FRD SCH2080KE(SiC-MOS+SBD)

100ns 100ns
Vge (5V/div) Vgs(5V/div)

Ic (5A/div)
Id (5A/div)

Eon
Eon=498.4uJ 34% Reduced Eon=331uJ
*Including diode recovery loss *Including diode recovery loss

Vce (100V/div) Vds (100V/div)

Large Loss by recovery current

With high internal Rg, recommend
Become worth with high temp external Rg 0 to 5Ω for fast operation
Note: These data are just reference based on ROHM’s evaluation result at the same conditions.
The characteristics above are not guaranteed by ROHM
© 2017 ROHM Co.,Ltd. P. 34
 ③ SiC-MOSFET: Internal Diode Characteristics

Vd- Id Characteristics (reverse direction)

0 Vgs=0V Vgs=18V

Ta=25ºC Source (+) Source (+)

-5
Pulsed
Drain Current : ID [A]

-10 Vgs=0V Vgs=0V Vgs=18V

Vgs=2V
Source (+) Source (+)
-15 Vgs=4V
Vgs=6V Channel current
Body-Di current
-20 Body-Di current
Vgs=10V
-25 Vgs=14V
Vgs=18V Channel current
Body-Di current
Drain (-) Drain (-)
-30 Body-Di current

-10 -8 -6 -4 -2 0

Drain - Source Voltage : V DS [V]

Drain (-) Drain (-)

Because of wide bandgap semiconductor, body diode Vf is high (Vgs=0V）.

But reverse conducting (Vgs=18V) can reduce the losses.

© 2017 ROHM Co.,Ltd. P. 35

 ③ SiC-MOSFET： Internal Diode Reverse Recovery

IXFB44N100P (1000V Si-MOSFET) SCT2080KE

Is(10A/div) Is(10A/div)
100ns/div 100ns/div

80ns/div trr=16ns 80ns/div

trr=163ns
Vds(100V/div) Irr=4A→ Vds(100V/div)

Ultra fast body-diode

Irr=28A→

Err=41.0uJ Err=0.3uJ

36 ROHM Co.,Ltd.
© 2017 P. 36
 ③ SiC-MOSFET： Reliability of ROHM’s SiC-MOSFET

 Same Qbd as Si-MOSFET

 Stable body diode (15-20C/cm2)
 with bias
(Peculiar to SiC)

 Cosmic ray exposure test

0.1FIT@960V
Si-MOSFET
 Stable Vth
Si-IGBT (VthHTGB
sift (+22V,
±0.2V@Vgs(DC)max)
150℃)
1.5

ROHM
SiC-MOSFET 1.0
SiC-MOSFET

Vth shift [V]

0.5

 100% outgoing tested 0.0

 Tjmax: 175℃  Burn-in test -0.5

0 200 400 600 800 1000
Stress time [hrs]

© 2017 ROHM Co.,Ltd. P. 37

 ③ SiC-MOSFET： Product Line-up

BVDSS P/N Package RDSon ID max SBD

1200V SCT2080KEC TO247 80mΩ 40A - TO-247 TO-220AB

1200V SCH2080KEC TO247 80mΩ 40A 内蔵

1200V SCT2160KEC TO247 160mΩ 22A -

1200V SCT2280KEC TO247 280mΩ 14A -

GDS
1200V SCT2450KEC TO247 450mΩ 10A -
G D S
650V SCT2120AFC TO220AB 120mΩ 29A -

SiC-SBD

SCT series SCH series

Inverse diode forward current: Is [A]

Drain Drain

Gate Gate

Body-Diode
Source of SiC-MOS
Source

MOSFET MOSFET SBD Source-drain voltage: Vsd [V]

As of Sep 5, 2014
© 2017 ROHM Co.,Ltd. P. 38
 ③ SiC-MOSFET： Next Generation SiC-MOSFET

Existing Next Generation

2G DMOS 3G UMOS “Trench MOSFET”
Meta l Metal
SiO2
SiO2
P oly-Si
N+
P+ N+ Poly-Si
P
P+
P Gate trench

SiC n- Drift layer Source SiC n- Drift layer

trench

SiC sub SiC sub

Metal Metal
SiC-MOSFET SiC Trench MOSFET

In Mass Production Mass Production: Jun 2015

© 2017 ROHM Co.,Ltd. P. 39

 ③ SiC-MOSFET： Next Generation SiC-MOSFET
＜General Single Trench Structure＞ ＜ROHM’s Double Trench Structure＞
Metal
Use trench structure
SiO2 for source
N+ Poly
-Si
P+
P Gate trench

Source The structure can

trench mitigate electric field at
SiC n- Drift layer the bottom of gate trench,
SiC sub therefore, it ensures long
term reliability and
Metal

Electric field Electric field realized mass production.

concentration at mitigation at the
the bottom of gate bottom of gate
trench trench
(MV/cm)
Mitigating 1.5
concentration of 1.2
electric field at
the bottom of High 0.9
gate trench and 0.6
need to ensure
device long term 0.3
reliability. Low 0.0

© 2017 ROHM Co.,Ltd. P. 40

 ③ SiC-MOSFET： Next Generation SiC-MOSFET
5000
4500
3G UMOS (Trench MOS)
4000 1200V 40mΩ

3500
Ciss(pF)

3000 2G DMOS
Ciss (pF)

2500 80mΩ 1200V

2000
1500
Same chip size
1000
500
0
0 20 40 60 80 100 120 140 160
Ron@25℃ (mΩ )
Ron@25℃(mΩ)

Great performance improvement with the same chip size

 Ciss: 35% reduction
 Ron: 50% reduction
© 2017 ROHM Co.,Ltd. P. 41
 ③ SiC-MOSFET： Next Generation SiC-MOSFET

Discrete
TO247N
BVDSS RDSon
1200V 40mΩ
1200V 30mΩ
1200V 22mΩ
650V 30mΩ

Expanding discrete product line-up

© 2017 ROHM Co.,Ltd. P. 42

 ③ SiC-MOSFET: Application Example #1

Phase Shift DC/DC Converter （Demonstration circuit)

Attached to Surge Absorber

DC in DC out
800V 800V
Transformer Full-bridge Inverter
Full-wave Rectifier

Full-bridge Resonance Smoothing

Capacitor
Inverter Gate Driver Choke

Comparison of performance with transistors

Smoothing
to construct a full bridge inverter. Capacitor
Smoothing
 Si IGBT Capacitor
 SiC 2G DMOSFET Transformer
 SiC 3G Trench MOSFET DC out
DC in
800V
800V

* Joint work with Power Assist Technology Ltd. 350mm

© 2017 ROHM Co.,Ltd. P. 43
 ③ SiC-MOSFET: Application Example #1

Phase Shift DC/DC Converter Efficiency Comparison

98% 98%
SiC 3G UMOS
SiC 2G DMOS
Efficiency of Converter Board

Efficiency of Converter Board

97% 97% 30mΩ 4pcs
100kHz10kW
100kHz10kW
96% 96%

95% 95%
SiC 2G DMOS
Si IGBT
94% 94% 80mΩ 8pcs
25kHz3kW
100kHz10kW
93% 93%

92% 92%
20% 40% 60% 80% 100% 20% 40% 60% 80% 100%
Ratio for the rating of the output electricity Ratio for the rating of the output electricity

SiC MOSFET SiC Trench

Si-IGBT (2G) MOSFET (3G)
Switching Device 1200V40A 1200V 80mΩ 1200V 30mΩ
40A 73A
Switching Device
1 2 1 SiC Trench MOS reduced the BOM
Parallel
Switching
25kHz 100kHz 100kHz SiC makes higher frequency
Frequency
Total Wattage 3kW 10kW 10kW operation and increases out power
Unit Size 350 x 300 x 120 (same size)
© 2017 ROHM Co.,Ltd. P. 44
 ③ SiC-MOSFET: Application Example #2

Pulse Power
•Use: System momentarily to provide power with short time
•Application： Gas laser, accelerator, X-ray and plasma power
•Requirements: High voltage and fast switching

Present Future
Slow Si switch or vacuum tube High voltage high speed switch by SiC

Klystron Thyratron

withstand voltage
Ultra High voltage high

Serial connection
2.4m
speed switch
SiC’s high voltage and high

makes high
speed are key
IGBT is non-competitive
High energy medical Gas laser power supply, from high speed point of
accelerator, radar, radiotherapy equipment, view
industrial microwave switch applied more than
accelerator 20kV

Joint work with

© 2017 ROHM Co.,Ltd. P. 45

 ③ SiC-MOSFET: Application Example #2
（Joint work with Fukushima SiC Applied Engineering Inc., exhibited to CEATEC 2014）

Ultra High Voltage Pules Power Supply

• Features: Ultra high voltage pseudo-Nch SiC MOSFET
 Low Ron（less than 1/100 for existing ）
 High repetition frequency (more than 100x for existing）
• Applications： Charged particle accelerator, medical power, plasma power

Increase
voltage
with 4
serial SiC 100ms
MOSFET 431mm
21.3ns

20kV

ROHM
SiC MOSFET
8kV 240Apeak 32kV 240Apeak
SiC switching PCB SiC switching module
• Part of the result is supported by “Kyoto Super Cluster Program of the Ministry of Education, Culture, Sports, Science and Technology.

© 2017 ROHM Co.,Ltd. P. 46

 ③ SiC-MOSFET: Application Example #2

8kVDC 240Apeak SiC Switching PCB (7-serial, 3-parallel MOSFET-Array

Isolated To Drain terminal at
transformer front side of module

FET parallel circuit cell #1

24VDC
power supply
Isolated Cu Plate
transformer
Not connected with
trace line considering
maintenance

Optical fiber

To Source terminal at
front side of module

© 2017 ROHM Co.,Ltd. P. 47

 ③ SiC-MOSFET: Application Example #2

1 to 10kV Random Pules Generator： 13.2kV SiC Switch

SiC-MOSFET
Achieved 13.2kV rated
SiC switch using 12
pcs of 1.1kV rated SiC
switch board
connected serially.

Switching Panel 1.1kV rated SiC switch board

© 2017 ROHM Co.,Ltd. P. 48

 ③ SiC-MOSFET： Difference from Si-MOSFET

Difference from Si-MOSFET： Vgs

Ron vs Vgs
SCT2080KE (1200V 80mΩ)
• Drift layer resistance of SiC-MOSFET
Vgs-Rdson Id=10A is lower than Si-MOSFET
300
25℃
• On the other hand, Ron is high
50℃
75℃
• Therefore the higher Vgs, the lower
100℃
200 125℃ Ron
Rdson(mΩ )

150℃
• Saturation will progress gradually
when Vgs is more than 20V.
100
• General drive voltage, Vgs for IGBT
and Si-MOSFET is from 10 to 15V.

0
• Recommended Vgs for SiC-MOSFET
5 10 15 20 25 is around 18V to obtain enough
Vgs (V) low Ron

© 2017 ROHM Co.,Ltd. P. 49

 ③ SiC-MOSFET：Si-MOSFETとの違い

Difference from Si-MOSFET： Rg

Internal Gate Resistance: Rg •Internal gate resistance, Rg depends
S2301 1200V 80mΩ SiC-MOSFET on sheet resistance of gate terminal
material and chip size
•With the same design, it’s in inverse
to chip size, so the smaller chip, the
higher Rg
•Because chip size of SiC-MOSFET is
smaller than Si devices, so
capacitance is smaller but Rg is
larger.
•Rg of 1200V 80mΩ SiC-MOSFET is
about 6.3Ω.
•Switching time depends on external
gate resistance significantly
•For fast switching, external gate
resistance will be a few ohms or as
Rg (Ω) small as possible
•Be careful to surge voltage with
smaller external gate resistance
© 2017 ROHM Co.,Ltd. P. 50
 ③ SiC-MOSFET

SiC-MOSFET Summary
 Fast switching
→ Significant reduction of switching loss, compared with IGBT
 Body diode characteristics
→ Fast recovery
→ High Vf due to wide bandgap semiconductor
 Developing next generation devices

* Difference from Si devices(note for circuit designing)

• Recommended gate drive: 18V
• External gate resistance must be small, as internal Rg is high

© 2017 ROHM Co.,Ltd. P. 51

 SiC Power Devices
Understanding & Application Examples Utilizing the Merits

① What is SiC（Silicon Carbide） ?

② SiC-SBD（Schottky barrier diode）
③ SiC-MOSFET
④ Full SiC Module
•Structure of 1200V/300A Full SiC Module
•Switching Loss
•Full SiC Module Using the 2nd Generation
SiC-MOSFET
•Utilizing Full SiC Module
–Gate Drive
–Snubber
–Practical Full SiC Module Driving
–Design Support Tools

© 2017 ROHM Co.,Ltd. P. 52

 ④ Full SiC Module

1200V/300A Full SiC Module Structure

17mm

SiC SBD SiC MOSFET

Internal Block
SiC-MOSFET

SiC-SBD
FA Power Supply

SiC-SBD

Inverter IH (induction heating)

SiC-MOSFET

© 2017 ROHM Co.,Ltd. P. 53

 ④ Full SiC Module

MOSFET BVDSS ID max Part # Package Internal Block

C type

1200V 120A BSM120D12P2C005

2nd
Generation 1200V 180A BSM180D12P2C101
DMOSFET

E type

1200V 300A BSM300D12P2E001

© 2017 ROHM Co.,Ltd. P. 54

 ④ Full SiC Module

Switching Loss
Comparison of Data Sheet Loss Simulation (Assumed PWM inverter)
100

Switching Loss
Conduction Loss
Switching Energy Losses （mJ）

80
Eon Reduced
totally
60%
60 at hi freq.
▲77% Eoff Reduced
40 totally
22%
Simulation Condition
20
Eon Err
Eoff
Err
0
1200V/300A
BSM300D12P2E001 Market Available
BSM300D12P2E001 IGBT Module

Comparison with IGBT Module:

• Significant switching loss reduction
• Effective total loss reduction at higher switching frequency operation

Note: These data are just reference based on ROHM’s evaluation result at the same conditions. The characteristics above are not guaranteed by ROHM

© 2017 ROHM Co.,Ltd. P. 55

 ④ Full SiC Module

Full SiC Module Using the 2nd Generation SiC-MOSFET

BSM180D12P3C007
C type 1200V
SiC-SBD & SiC Trench MOSFET
17mm 120A
RDSON Full SiC Module
20mΩ typ. Larger
Current
SiC-SBD C type
1200V
17mm
SiC-DMOSFET 180A
RDSON
10mΩ typ.
C type 1200V SBD inside
180A
17mm Lower Ron SiC-SBD
RDSON
12.8mΩ typ.
SiC-UMOSFET

SiC-DMOSFET

© 2017 ROHM Co.,Ltd. P. 56

 ④ Full SiC Module

SiC Trench MOSFET reduces Comparison between 1200V 180A

switching loss significantly Modules * Based on data sheet

Switching Loss
Reduction
•77% of switching loss reduction 77%
for IGBT Module

Switching Loss
•42% of switching loss reduction 60%
Reduction
for full SiC module using ROHM’s
2nd generation SiC planar 42%
MOSFETs
Reduction

Trench MOS
BSM180D12P3C007

Internal
Block
SiC-SBD
SiC-MOSFET
Trench MOSFET
BSM180D12P3C007
C type

© 2017 ROHM Co.,Ltd. P. 57

 ④ Full SiC Module

Utilizing Full SiC Module

• Gate Drive
• Snubber
• Practical Full SiC Module Driving
• Design Support Tools

© 2017 ROHM Co.,Ltd. P. 58

 ④ Full SiC Module： Utilizing Full SiC Module
Consideration for Gate Driving: Erroneous On-operation
20
Gate Voltage (V)

Oscillation VgsH
15
UpperVgs High-side
10 MOSFET
5
Ringing
0 LowerVgs
-5 VgsL
-10
700 0 0.2
18V 0.4 0.6 0.8 1
600 time (us)
500 Low-side
MOSFET
400 Vd
Vds (V)

300 VCC2
200
100 5V OUT displacement
0 current
-100
V in
0 0.2 0.4 0.6 0.8 1

0V time
G N D(us)
2
VEE2
Erroneous on-operation due to gate voltage oscillation (upper arm)
and gate voltage0 Vstep-up (lower arm) is considered.
-3 V
© 2017 ROHM Co.,Ltd. P. 59
 ④ Full SiC Module： Utilizing Full SiC Module

Switching Speed （dV/dt）: SiC-MOS vs Si-IGBT

40 40
ON 35 OFF

Turn off dV/dt (kV/usec)

Turn on dV/dt (kV/usec)

35
30 30
25 ROHM 25
Full SiC Module ROHM
20 20 Full SiC Module
15 15
IGBTModule
10 10
5 5
IGBTModule
0 0
1 10 100 1 10 100
Gate resistance Rg (Ω) Gate resistance Rg (Ω)
On-switching speed in direct relation As SiC MOSFET has no tail current,
to erroneous on-operation is almost off-switching speed depends on
the same for the both and it depends external Rg setting as same as
on external Rg setting. on-switching.

© 2017 ROHM Co.,Ltd. P. 60

 ④ Full SiC Module： Utilizing Full SiC Module
容量特性 （TYP)
Parasitic Capacitance： SiC-MOS vs Si-
IGBT
1.E-07 10
Cgs and Cgd Ratio of Cgd / Cgs
IGBT Module
Cgs
1
ROHM
1.E-08 SiC Module
Capasitance (F)

Cgd / Cgs (-)

BSM120
ROHM 0.1
SiC Module
BSM120
1.E-09
Cgd 0.01
IGBT Module

1.E-10 0.001
0.1 1 10 100
0.1 1 10 100
Drain-source voltage VDS(V)
Drain-source voltage VDS(V)

Cgd Parasitic gate capacitance ratio, Cgd/Cgs,

which affects lower arm MOSFET gate
voltage step-up, is almost the same for
Rg both SiC MOSFET and Si-IGBT.
Cgs

* Cds also exists between drain and source

© 2017 ROHM Co.,Ltd. P. 61

 ④ Full SiC Module： Utilizing Full SiC Module

Mechanism for Gate Voltage Step-up, DVgs (Rg dependence)

Small

Turn
ON
18V

D
VCC2
5V OUT
G
Conditions that lower arm V
gate voltage step-up becomes larger:
in
S
1. Upper arm switching speed, dVds /dt becomes faster (Rg_H is small)
0V GND2
2. Lower arm external gate resistor, Rg_L is larger

0V
© 2017 ROHM Co.,Ltd. P. 62
 ④ Full SiC Module： Utilizing Full SiC Module

Erroneous On-operation Control Methods

① ② Parasitic Cg ③
Adding mirror clamp
-Vgs RG MOSFET

Adding CGS

Drive gate voltage to Suppressing voltage Add a MOSFET switch

below zero volt (minus) step-up, add external between gate and
capacitor between gate source and turn it on
and source to reduce when lower arm is off
impedance of the node to zero Vgs

© 2017 ROHM Co.,Ltd. P. 63

 ④ Full SiC Module： Utilizing Full SiC Module
Gate Driving Circuit Example (minus drive)

Gate
resistors External capacitor
2.2Ω
5600pF
3.9Ω
Power
Module

Gate
Driver IC
Push-pull amp Mirror clamp MOSFET

Note: Component values are just reference. Adjustment of Rg is needed, checking surge voltages.

© 2017 ROHM Co.,Ltd. P. 64

 ④ Full SiC Module： Utilizing Full SiC Module

Effect of Adding CGS： CGS=0 (without CGS)

9

8 1.0Ω
Parasitic Cg
2.2Ω RG
7
ΔVgs (V)

6
3.9Ω
5
5.6Ω SiC Module 1200V 120A
(BSM120D12P2C005)
4 • VPN = 600V
• Id= 100A
3
0 2 4 6 8 10
Eon + Eoff (mJ)

Note: External resistors for high-side and low-side and capacitance of external capacitor is the same for all (no change).

© 2017 ROHM Co.,Ltd. P. 65

 ④ Full SiC Module： Utilizing Full SiC Module

Effect of Adding CGS： CGS=2.2nF

9
Gate voltage
step-up is
8 1.0Ω
controlled. Parasitic Cg
2.2Ω RG
7
ΔVgs (V)

6
3.9Ω Add CGS

5
5.6Ω SiC Module 1200V 120A
(BSM120D12P2C005)
4 • VPN = 600V
• Id= 100A
3
0 2 4 6 8 10
Eon + Eoff (mJ)

Note: External resistors for high-side and low-side and capacitance of external capacitor is the same for all (no change).

© 2017 ROHM Co.,Ltd. P. 66

 ④ Full SiC Module： Utilizing Full SiC Module

Effect of Adding CGS： CGS>2.2nF

9

8
Parasitic Cg
RG
7
ΔVgs (V)

6
Add CGS
5
SiC Module 1200V 120A
(BSM120D12P2C005)
Non-effective
4 • VPN = 600V
to increase
• Id= 100A
capacitance
3
0 2 4 6 8 10
Eon + Eoff (mJ)

Note: External resistors for high-side and low-side and capacitance of external capacitor is the same for all (no change).

© 2017 ROHM Co.,Ltd. P. 67

 ④ Full SiC Module： Utilizing Full SiC Module
10 Effect of Mirror Clamp MOSFET
250 1.0Ω
1.0Ω
1.0Ω 200
2.2Ω
2.2Ω
8
2.2Ω 3.9Ω
3.9Ω

(V)
Vsurge (V)
6 150
3.9Ω 5.6Ω
ΔVgs (V)

Vsurge
5.6Ω
4 100

2 50

0 0
0 2 4 6 8 10 0 2 4 6 8 10
Eon + Eoff (mJ) Eon + Eoff (mJ)

SiC Module 1200V 120A

Adding mirror clamp MOSFET is (BSM120D12P2C005)
very effective to control • VPN = 600V
erroneous on-operation • Id= 100A

© 2017 ROHM Co.,Ltd. P. 68

 ④ Full SiC Module： Utilizing Full SiC Module
Wave Form of Evaluation Circuit
150
Before After
100
Green Red
↑IDI(low) Line Color
IDS,IDI(A)

— — Before Blue Orange

50
— — After
Clamp MOSFET NO YES
0
↑IDS(high) RG(Ω) 3.9 2.2
700
-50
CGS(nF) 0 5.6
600 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
500 ↑V (high)
time (us)
Eon(mJ) 3.59 3.19
VDS,VDI (V)

DS
400
— — Before Ta (℃) 25
300
— — After
200 VDS(V) 600
100 ↓V (low)
0
DI
VGS(V) 18
-100
20 ID(A) 100
0.1 0.23.5 V 0.3 0.4 0.5 0.6 0.7 0.8
15 ↑Gate(high) Power Module BSM120D12P2C005
time (us)
10 7.7 V — — Before Gate Driver BW9499H
VGS (V)

5
1.1 V 5.9 V — — ↓Gate(low)
After
0
VDS
-5

-10
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

time (us) VDS

Achieved controlling oscillation, ringing and
rise characteristics to optimize parameters
© 2017 ROHM Co.,Ltd. P. 69
 ④ Full SiC Module： Utilizing Full SiC Module

Snubber Capacitor： Line Inductance Reduction

Measurement Environmental Example
Ceramic capacitor: 7.5µF Film Capacitor: 1.2µF Film Capacitor: 120µF
2-serial 2-parallel 2-parallel & 2-serial

PN bus bar

Gate signal input Power Module body Aluminum electrolytic capacitor

• Utilizing fast switching performance, need to reduce parasitic inductance of electric wiring
as small as possible.
• Reducing line inductance, to connect the capacitors closely to the power terminal
(red circle on the schematic).

© 2017 ROHM Co.,Ltd. P. 70

 ④ Full SiC Module： Utilizing Full SiC Module

Examples for Snubber Capacitor

Film Capacitor Ceramic Capacitor

Soshin Electric Co., Ltd. Murata Manufacturing Co., Ltd.

LC78P801D127K-AA EVSM1D72J2-145MH14
800VDC 120µF 630VDC 270nF
2-serial/2-parallel 2-serial/2 to 5 parallel

Connection Example:
2-serial/5 parallel x2

Nippon Chemi-Con Corp. Total: 1.35µF

FHACD1C2V125JTLJZ0
1250VDC 1.2µF Note: Snubber module
1 to 2-parallel is available (same type
as this photo)

© 2017 ROHM Co.,Ltd. P. 71

 ④ Full SiC Module： Utilizing Full SiC Module

Snubber Capacitor： Mounting Examples

1：No Caps 2： Nippon Chemi-Con 3： Murata Manufacturing

Nippon Chemi-Con Murata Manufacturing

FHACD1C2V125JTLJZ0 EVSM1D72J2-145MH14
1250VDC 1.2µF 630VDC 270nF
2-serial/5-parallel
Soshin Electric LC78P801D127K-AA 800VDC 120µF 2-serial/2-parallel

© 2017 ROHM Co.,Ltd. P. 72

 ④ Full SiC Module： Utilizing Full SiC Module

Snubber Capacitor： Off-Wave Form Comparison

925V Surge wave form occurs between

drain and source when SiC MOSFET
860V cut off current VDD=600 V
798V ID=300 A

1 Soshin Electric LC78P801D127K-AA + Nothing

2 Soshin Electric LC78P801D127K-AA + Nippon Chemi-Con FHACD1C2V125JTLJZ0

3 Soshin Electric LC78P801D127K-AA + Murata Manufacturing EVSM1D72J2-145MH14 2-serial/5-parallel

Note: Surge wave form depends on capacitor mount position, and also difference of parasitic
inductance from structure.
© 2017 ROHM Co.,Ltd. P. 73
 ④ Full SiC Module： Utilizing Full SiC Module

Snubber Capacitor： Effect by Ceramic Cap Capacitance

・After turn-off ringing with 23MHz (t1) can be quickly decreased with lower number of parallel line.
⇒ Number of parallel line will be in inverse to ESR
・2MHz ringing (t2) occurs if capacitance is smaller.
⇒ Electric Charge will be filled up through a path with larger inductance.

Soshin LC78P801D127K-AA
＋ Murata EVSM1D72J2-145MH14
ＶDD=600 V
815V ID=300 A A 270nF 2-s/1-p x2 = 270mF
806V B 47nF 2-s/4-p x2 = 188mF
798V t1 t2 C 270nF 2-s/5-p x2 = 1350mF

Ex.
5-para Condition C

2-seri

As for ceramic cap, lower number of parallel line and larger capacitance are effective.

© 2017 ROHM Co.,Ltd. P. 74

 ④ Full SiC Module： Utilizing Full SiC Module

Snubber Capacitor： Effect by Large Capacitance Cap

・No big difference on surge voltage, but 400kHz ringing occurs if the film cap is not.
⇒ Electric charge will be filed up from distant Al electrolytic cap and power supply

Shoshin LC78P801D127K-AA ⇒ Comparison presence with absence

Murata EVSM1D72J2-145MH14 ⇒ 2-serial/5-parallel

Presence Absence

ＶDD=600 V
ID=300 A

806V
798V

Large capacitance cap is effective to reduce long period ringing.

© 2017 ROHM Co.,Ltd. P. 75
 ④ Full SiC Module： Utilizing Full SiC Module

Full SiC Module: Practical Driving Example

temperature 25
(℃)
Rgon (Ω) 0.2
(Dedicated driver: 0)
Rgoff (Ω) 0.2
Gate drive 18 / 0
voltage (V) Power
Supply
Turn on 180 600 V
current (A)
Turn off 200 Electrolytic cap：2200 µF SiC Power Module
current (A) Film cap： 120 µF 1200V300A
External Inductor： 100 µH BSM300D12P2E001

Countermeasure for erroneous on-operation will be required if dedicated driver is not used.
– Add CGS（µF order)
– Use minus bias for VGS (-5V）

© 2017 ROHM Co.,Ltd. P. 76

 ④ Full SiC Module： Utilizing Full SiC Module

Full SiC Module: Practical Driving Example

Isolated Ext Inductor

PS

Gate Driver

Film Capacitor
(1600V / 120µF)

Snubber
Module
Heater
plate

Electrolytic cap
(1800V 2200µF)
© 2017 ROHM Co.,Ltd. P. 77
 ④ Full SiC Module： Utilizing Full SiC Module
Effect of Gate Driver & Snubber Module： Turn-on
300

Before
250
IDI
Current (A)

200
150
100
After Before
50 IDS
0
-50

After
-100
0 0.3 0.6 0.9 1.2 1.5
1000
Before time (us)
800
Voltage (V)

600

After
400 VDS
200
VDI Before After
0
Gate driver board Absence Presence
-200
25 0 0.3 0.6 0.9 1.2 1.5 Snubber Module Absence Presence
20 time (us)
Voltage (V)

15 Highside Result:
10 After Before •Surge voltage suppression: 1000V to 650V
5 Lowside
0 •Oscillation of all wave forms is suppressed
-5 •Achieved breakthrough as same as µF
-10 capacitance.
0 0.3 0.6 0.9 1.2 1.5 •Loss, Eon is increased: 4.3 mJ to 5.3 mJ
time (us)
Note: Eon is larger and Eoff is smaller if inductance becomes small.
© 2017 ROHM Co.,Ltd. P. 78
 ④ Full SiC Module： Utilizing Full SiC Module

Effect of Gate Driver & Snubber Module： Turn-off

250
200 Before
Current (A)

150 IDS
100
50 After Before
IDI
0
-50
-100 After
1200 0 0.3 0.6 0.9 1.2 1.5

1000
Before time (us)
Voltage (V)

800
VDI
600
400
After Before After
200 VDS
0 Gate driver board Absence Presence
-200 Snubber Module Absence Presence
25 0 0.3 0.6 0.9 1.2 1.5
20 Highside Before
Voltage (V)

time (us)
15
10
After Result:
5 •Surge voltage suppression: 1000V to 650V
0 •Oscillation of all wave forms is suppressed
-5
-10 Lowside •Loss, Eoff is decreased: 5.3 mJ to 3.8 mJ
* 0.4 mJ of total loss (Eon+Eoff) is reduced
0 0.3 0.6 0.9 1.2 1.5
time (us)

© 2017 ROHM Co.,Ltd. P. 79

 ④ Full SiC Module： Utilizing Full SiC Module
Design Support Tolls: SiC Module Evaluation Board

Full SiC Module

Possible to use
to put it on the
SiC Module

Gate Drive Board

for Evaluation

Note: The SiC Module Evaluation Board is only for evaluation purpose, not to support any mass production use.

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 ④ Full SiC Module： Utilizing Full SiC Module

Design Support Tolls: Snubber Capacitor Module

Ceramic Snubber Capacitor Module

EVSM1D72J2-145MH16
1260VDC, 1350nF
2-serial/5-parallel (10 chips)

Murata Manufacturing Co., Ltd

KR355WD72J564MH01
630VDC, 270nF

280nF 560nF
(2-parallel)

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 ④ Full SiC Module： Utilizing Full SiC Module
Design Support Tolls: Loss Simulation

ROHM Web Site

Go to Power Devices/SiC Power Devices

Download Loss Simulator !

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 ④ Full SiC Module： Utilizing Full SiC Module

Design Support Tolls: Loss Simulation

Input Output

• Loss simulations for Full SiC Modules and IPM products is possible.
• Useful for initial consideration work.

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 ④ Full SiC Module

Full SiC Module Summary

 Fast switching
→ Significant switching loss reduction comparing
with IGBT Module
 Developing with next generation devices
→ Faster switching type
→ Larger current type (under development)
 Understanding characteristics for utilizing
 Gate Drive
→ Mirror Clamp, component value consideration,
evaluation with driver board
 Snubber
→Lowest parasitic inductance and use of effective
components
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 SiC Power Devices
Understanding & Application Examples Utilizing the Merits

Future Developments
Full SiC Power Module
Rates Voltage: 1200V Rates Voltage: 1200V
Rated Current: 120A / 180A Rates Current: ～300A Developing
Larger Voltage/Current Module
Rates Voltage: 1200V, 1700V
Rates Current: ～600A（1200V）
Discrete Products ディスクリート部品
Rates Voltage: 650V, 1200V Rates Voltage: 650V, 1200V
Rates Current: ～40A Rates Current: ～118A（650V）
～95A（1200V）

Date
Industrial FA Automotive
Center
Inverter Robotics Power Train

Wind Power
Generation
Railroad

Power
Supply Solar Power Product
UPS Equipment

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 SiC Power Devices
Understanding & Application Examples Utilizing the Merits

① What is SiC（Silicon Carbide） ? ③ SiC-MOSFET

• Major Semiconductor Materials • Positioning of SiC-MOSFET
• Properties: Comparison with Si • Major Power Devices form 600V to
• Background of Development 2000V
• Merits of SiC • Performance Comparison of Power
• History of SiC Research Transistors
• Approaches to SiC Devices of • Internal Diode Characteristics
ROHM • Reliability of ROHM’s SiC-MOSFET
• Product Line-up
② SiC-SBD（Schottky barrier diode） • Next Generation SiC-MOSFET
• Positioning of SiC-SBD • Application Examples Utilizing the Merits
• Comparison with Si-SBD • Difference from Si-MOSFET
• Comparison with Si PN Diode
• The 2nd Generation SiC-SBD ④ Full SiC Module
• Merits Using SiC-SBD • Structure of 1200V/300A Full SiC Module
• Comparison of Forward • Switching Loss
Characteristics • Full SiC Module Using the 2nd Generation
• Product Line-up of the 2nd SiC-MOSFET
Generation SiC-SBD • Utilizing Full SiC Module
• Adoption Example – Gate Drive
– Snubber
– Practical Full SiC Module Driving
– Design Support Tools

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© 2017 ROHM Co.,Ltd.