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Influence of Location and Capacity of Distributed Generations on
Voltage Sags Mitigation Using Alternative Transient Program
To cite this article: Surya Hardi et al 2020 IOP Conf. Ser.: Mater. Sci. Eng. 1003 012140
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ICI_ME 2020 IOP Publishing
IOP Conf. Series: Materials Science and Engineering 1003(2020) 012140 doi:10.1088/1757-899X/1003/1/012140
Influence of Location and Capacity of Distributed
Generations on Voltage Sags Mitigation Using Alternative
Transient Program
Surya Hardi1, S M Hutasoit2 and Fanidia Purnamasari3
1,2
Department of Electrical Engineering, Universitas Sumatera Utara, Medan,
Indonesia.
3
Department of Information Technology, Universitas Sumatera Utara, Medan,
Indonesia
Abstract. This paper presents the influence of distributed generation (DG) location and capacity
for mitigating voltage sag caused by faults. The voltages sags are caused by the faults were
simulated on the IEEE 13 bus system for single line to ground close to 650 and three-line phase
faults at bus 646 using Alternative Transient Program (ATP) software. The voltages are
monitored at every buss system. The DG is installed for one DG, two DG and three DG as the
alternative. The DG locations are installed based on trial and error. DG total capacity is 2/3 load
total installed in the system. As the alternative DGs installed viz. for one DG at Bus 611 with the
capacity of 2.5 MVA; Two DGs at Bus 611 and Bus 680 with their respective capacities of 1.25
MVA; Three DGs are located at Bus 611, Bus 680 and Bus 633 with their respective capacities
of 1 MVA. The results show that DG location placement in many locations gives the better
results for mitigating voltage sags.
1. Introduction
The power quality disturbance most frequent is reported by customer is voltage sag [1][2]. The sag can
causes disruption even shutdown the operation of many industrial sectors, especially which uses modern
power electronic equipment such as the computer, power electronic device and microcontroller, variable
speed drive (VSD), program logic control (PLC), contactors, electrical machine, etc. This equipment is
identified as sensitive against voltage sags. When the sag come on at the industry terminal, it can lead
to the degradation of equipment even can cause industry shutdown or interruption. An interruption can
lead to loss production and failure in the end product. For process industries such as textile, glass, hot
rolling mill industries, sag can cause disruption and finally leads to product damage. Commonly the
industries use VSDs are to control the motor speed [3][4].
Voltage sags effects on the equipment have been reported in the previous studies in some papers
including that computers reboot for sags less than sag of 50% in duration more than 50 milliseconds.
The contactor will drop out for sag less of 70% with duration of more than 20 milliseconds [5]. Even
microcontroller drops out for higher voltage sag of 78% [6]. Three-line phase sag can cause VSD
disruption for sag magnitude of 70% and single sag with sag magnitude of 57% [7].
Distributed generation (DG) is defined as something power generation unit connected directly to
distribution network system or industries facility grid at the consumer. DG can mitigate power quality
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ICI_ME 2020 IOP Publishing
IOP Conf. Series: Materials Science and Engineering 1003(2020) 012140 doi:10.1088/1757-899X/1003/1/012140
disturbance including voltage sag [8]. Previous works related DG as an electric power source which can
mitigate voltage sags were reported in [9][10]. Voltage sag resulted by faults were simulated by
ANAFAS on simple radial distribution system that focused sag resulted in different fault locations [10].
The IEEE system 13 buses have been used in alternative transient program (ATP) simulation of DG
effect on distribution network during the fault. Effect of DG in distribution was investigated in terms of
increased fault current in percentage, etc [11].
The short faults in the power system can be categorized namely three-line phase fault, phase to
phase fault, two-phase fault to the ground and single line to ground. The faults are the primary source
of voltage sag. The three-line phase fault (3LG) affects the largest on voltage sag but it very rare. The
single-line to ground (SLG) fault has probability are the largest occurred of them. Hence in this the study
source of voltage sags in simulation is SLG and 3LG fault. The purpose of the study is to investigate the
influence of location and capacity of DG to mitigate voltage sag. ATP program was used for simulating
the IEEE 13 bus in industrial distribution.
2. Methodology
2.1. Distribution Generation
Distribution generation technology is new relative technology in electric power system. Generally, DGs
are small scale including photovoltaic, micro turbine, wind turbine, fuel cell. Effect of DG installation
in network distribution is not similar and it depends on their application, location, capacity, consumers’
characteristic, and technology [9]. Commonly DGs are developed from renewable energy which one
capacity is limited to 10 MVA [12]. Determination of DG capacity was determined in this paper is using
trial and error which is the method based on the rule of thumb calculation. It is obtained with a formula
[13].
DGCap = 2/3 x TL MVA (1)
where DGCap is DG capacity connected and TL is load totally existing in the system
2.2. Voltage sag
Main sources of voltage sag are short circuit faults in power system and others are starting of large
motor, transformer energizing. But the both do not lead to becoming problems serious at electrical
equipment, because the voltage sag resulted is small relative. Even though sag produced by starting
motor taking a longer time. The sag is transient disturbance in power system. Voltage sag is defined as
a voltage drop suddenly start to happen from 10% until 90% of rms nominal voltage at a point measured
in the power system in duration from 0.5 cycles to one minute [7]. Sag magnitude and sag duration are
primary characteristics of voltage sag. These both parameters generally take effect on the electrical
equipment performance. The voltage sag in there-phase system described magnitude and duration such
as in Figure 1.
The Figure 1 shows peak value of voltage sag, V peak with magnitude of 50% and 100 m/s induration.
hence sag magnitude measured in rms is,
V peak
Vsag = (2)
2
Simple model of distribution equivalent circuit use voltage divider for voltage sag due to short circuit
fault is shown in Figure 2 [9].
2
ICI_ME 2020 IOP Publishing
IOP Conf. Series: Materials Science and Engineering 1003(2020) 012140 doi:10.1088/1757-899X/1003/1/012140
Voltage (Volt)
Duration (second)
Figure 1. Voltage sag of 50% and 100 milliseconds in duration
Figure 2. The simple model of the voltage divider
The voltage at bus point common coupling (PCC) can be calculated by
Zf (3)
VPCC = E S
ZS + Z f
Equation (2) is before DG is connected, whereas for after DG connected is given such as equation (3)
Z DG Zt
Veq = V pcc + E DG (4)
Z t + Z DG Z t + Z DG
where ES and EDG are source voltages of generator and DG, respectively. Zt and ZDG are the impedance
between PCC and Bus monitored.
2.3. Proposed procedure
To obtain the result from this research, voltage sags caused by short circuit fault occurred close to bus
650 in the system and some steps carried:
3
ICI_ME 2020 IOP Publishing
IOP Conf. Series: Materials Science and Engineering 1003(2020) 012140 doi:10.1088/1757-899X/1003/1/012140
• Modelling one-line diagram of the IEEE 13 busses system including them parameters.
• Set the SLG fault location close to the source i.e., at Bus 650 to find level of voltage sag for
each bus before and after the DG connected.
• Determine the location and capacity of DG connection based on the rule of thumb and trial and
error.
• Connect one DG, two DGs or three DGs to selected bus and observe the voltage level.
• For 3LG, repeat procedure step 2 until finish.
The one-line diagram of the IEEE 13 busses system [14] modeled using ATP draw is shown in Figure
2.
Figure 3. The IEEE 13 busses system modified
Figure 3 is distribution system has distinct voltage level viz., 11kV source, 4.16kV/0.48kV. Loads
connected to busses which are the total loads of 3.466 MW. A Substation at bus 650 has a three-line
phase voltage regulator which is its function to adjust the voltage.
3. Result
3.1. Voltage sag produced by single line to ground without DG
Voltage sags result from the single line to ground fault (SLG) simulation in phase A close to bus 650
during one second. Amount of voltage sags are observed before and after DG installation. The voltage
at every bus is monitored. For examples the voltages waveform at Bus 650 and Bus 646 are presented
in Figure 4. The Figures are three-line phase waveform which they are red, green and blue colours
represent phases A, B and C, respectively. In the figure shows, the vertical (Y) is the voltage (Volt)
whereas a horizontal (X) is time (seconds).
4
ICI_ME 2020 IOP Publishing
IOP Conf. Series: Materials Science and Engineering 1003(2020) 012140 doi:10.1088/1757-899X/1003/1/012140
(a) Voltage waveform measured at Bus 650
(b) Voltage waveform measured at Bus 646
Figure 4. Voltage waveform caused by SLG close to Bus 650
From Figure 4 can be seen that the voltage drop occurred one phase only viz. in phase A, therefore
phase A occurred voltage, whereas two other phases are remains in magnitude. During the fault, the
voltage drops or sag, after the fault is cleared by opening circuit breaker the voltage returns to normal
in several cycles. In this case, the highest the voltage drops occur on the bus subjected to close to the
fault meanwhile the bus voltage that far relative from the fault, the busses voltage to drop small relative.
This is because the impedance is inversely proportional to the source and this according to equation (4).
The bus location farther from the fault point, the impedance is larger. The voltage at Bus 650 and Bus
5
ICI_ME 2020 IOP Publishing
IOP Conf. Series: Materials Science and Engineering 1003(2020) 012140 doi:10.1088/1757-899X/1003/1/012140
646 are 46.6% and 83.0% of nominal voltage, respectively. The complete result of voltage profile at
each bus before and after the fault is presented in Table 1.
Table 1. Voltage profile of busses without DG
Voltage
Voltage before Voltage sag
Bus name during fault
fault (Volt) (%)
(Volt)
650 2478.9 1154.1 46.6
646 2428.0 2017.1 83.0
645 2446.7 1932.7 79.0
632 2600.0 2050.0 78.6
633 2714.7 1929.7 71.1
634 290.6 223.2 76.8
611 2877.0 2284.8 79.4
684 2926.0 2280.6 77.4
671 2924.1 2134.5 73.0
692 2924.1 2134.5 73.0
675 3027.7 2305.6 76.2
652 3043.8 2341.9 76.9
680 3051.4 2024.0 66.8
From Table 1 can be shown that the voltages at busses during fault drop. Largest drop is at Bus 650,
which the fault occurred. Some the bus voltage is less than 78% of it nominal. The equipment such as
microcontroller may drop out at the voltage [6].
3.2. Voltage profile caused by single-line phase to ground fault after DG connected
Amount of capacity DG installation is determined based on 2/3 of the loading total (3.47MVA). For one
DG capacity is required approximately is 2.5 MVA. Based on trial and error the one DG location is
selected at Bus 611. For two DG, the capacity divided by two DGs with their respective capacity is 1.25
MVA and it is connected at Bus 611and Bus 680 and then for three DGs, the capacity are 1 MVA with
the location at busses 611, 680 and 633. Percentage increasing of voltage sag due to DGs locations
compared with without DG is shown in Table 2. Increasing of voltage sag, it means voltage drops
become decrease so that the nominal voltages increase.
Table 2. Voltage sags (%) of busses systems for SLG at Bus 650 after DG installation
Bus Without Voltage Two DGs Voltage Three Voltage
Name DG (%) Increasing (%) Increasing (%) DGs Increasing (%)
650 47.6 2.1 47.8 2.6 48.1 3.2
646 86 3.6 86.3 4 88.1 6.1
645 82.1 3.9 82.9 4.9 85.3 8
632 81.2 3.3 82.6 5.1 85.8 21.7
633 77.3 8.7 79.7 12.1 86.5 21.7
634 77.8 1.3 80.1 4.3 86.2 12.2
611 81.7 2.9 84.4 6.3 82.4 3.8
684 83.5 7.9 84.6 9.3 83.5 7.9
671 81.6 11.8 81.2 11.2 80.5 10.3
692 81.6 11.8 81.2 7.9 80.5 10.3
675 80 5 82.2 1.2 82.2 7.9
652 78.4 2 77.8 1.6 78.9 1.6
680 81 22.6 77.6 7.9 74.5 11.5
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ICI_ME 2020 IOP Publishing
IOP Conf. Series: Materials Science and Engineering 1003(2020) 012140 doi:10.1088/1757-899X/1003/1/012140
From Table 2 can be observed that the voltages on busses increased due to installed DG. By
placement one DG on the bus 632, the voltage increase is highest at bus 671 and 692 which the busses
are near to bus connected DG for two DGs and also three DGs. Generally, the voltage increasing at all
the busses on average is 6.7%, 7.4% and 8.6% for one DG, two DGs and three DGs respectively. High
transient occurs at recovery voltage instant on the bus faulted compared with the other bus. This is a
concern to electronic equipment that sensitive against to high current.
3.3. Voltage profile caused by three-lines to ground fault after DG connected
The three-line phase fault was simulated at Bus 646. Examples of voltage waveform is captured at bus
646 and 650 are shown in Figure 5 without DG installation. The three-line phase fault leads to the
voltages drop as large in all the phases. The phase A (red colour), phase B (green colour) and phase C
(blue colour) drop in similar magnitude. The voltage sag resulted in bus 646 is 66.8%, whereas at Bus
650 is 95.3%.
The voltage sag resulted in the bus faulted is the highest drop compared with other busses because
the voltage bus is close to the fault point. Figure 4b shows voltage waveform at Bus 650 which it is far
from the fault point. From both the figures show voltage sag resulted is difference.
(a) Voltage waveform measured at Bus 646
(b) Voltage waveform measured at Bus 650
Figure 5. Voltage waveform caused by 3LG at Bus 646
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ICI_ME 2020 IOP Publishing
IOP Conf. Series: Materials Science and Engineering 1003(2020) 012140 doi:10.1088/1757-899X/1003/1/012140
Table 3. Voltage sags (%) of busses systems for 3LG at Bus 646 before and after DG installation
Bus Without One Voltage Two Voltage Three Voltage
Name DG (%) DG Increasing (%) DGs Increasing DGs Increasing (%)
(%)
650 95,3 95,7 0,4 96,3 1 96,8 1,5
646 66,8 67,1 0,5 68,9 3,1 69,3 3,7
645 67,6 68,2 0,9 70,9 4,9 71,2 5,3
632 69,2 71 2,6 74,3 7,4 73,7 6,5
633 69,7 70,2 0,7 76,1 9,2 75,8 8,8
634 69,4 69,7 0,4 75,9 9,4 76,1 9,7
611 63,2 75,7 9,8 78,4 24,1 81,4 28,8
684 68,6 78,4 14,3 77,8 13,4 80,1 16,8
671 66,2 77,1 16,5 76,1 15 77,6 17,2
692 66,2 77,1 16,5 76,1 15 77,6 17,2
675 69,1 76,6 10,9 78,5 13,6 80 15,8
652 68,1 73,2 7,5 70 2,9 73,1 7,3
680 66,6 83,3 25,1 79,9 17,1 81,2 21,9
The transient voltage after clearing is higher than SLG then toward normal in several cycles. The
complete result of voltage sags due to three-line-phase fault at Bus 646 at busses systems such as in
Table 3. The Table 3 is amount voltage sags of each bus without DG and with DGs installation. The
percentage of voltage increasing is significantly at busses 684, 671, 675 and 680 and they have the
increasing more than 10%. The busses are close to the busses DGs that DGs installed.
4. Conclusion
Study has been carried out used ATP simulation for single line to ground close to Bus 650 and three-
phase fault on Bus 646 at different locations as the voltage sags source. When faults occur the buss
voltages are far from the source voltage have voltage drop higher. The bus voltages close to DG provide
voltage increasing significantly. To mitigate voltage sag, placement small DG in several locations is
better than one DG location for similar capacity. DG capacity has influence on profile voltage
improvement, but the placement of DG location is more influential than DG capacity to mitigate the
voltage profile. The DG can improve the voltage profile, even though the busses voltage drop larger,
this is indicated while there-line phase fault it is more effective.
5. References
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ICI_ME 2020 IOP Publishing
IOP Conf. Series: Materials Science and Engineering 1003(2020) 012140 doi:10.1088/1757-899X/1003/1/012140
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