BS 107

SIPMOS ® Small-Signal Transistor

• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V

Pin 1 Pin 2 Pin 3

S G D

Type VDS ID RDS(on) Package Marking

BS 107 200 V 0.13 A 26 Ω TO-92 BS 107

Type Ordering Code Tape and Reel Information

BS 107 Q67000-S078 E6288

Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDS 200 V
Drain-gate voltage V
DGR
RGS = 20 kΩ 200
Gate source voltage VGS ± 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current ID A
TA = 31 ˚C 0.13
DC drain current, pulsed IDpuls
TA = 25 ˚C 0.52
Power dissipation Ptot W
TA = 25 ˚C 1

Data Sheet 1 05.99

 BS 107

Maximum Ratings
Parameter Symbol Values Unit

Chip or operating temperature Tj -55 ... + 150 ˚C

Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air 1) RthJA ≤ 125 K/W
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V (BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C 200 - -
Gate threshold voltage V GS(th)
VGS=VDS, ID = 1 mA 0.8 1.5 2
Zero gate voltage drain current IDSS
VDS = 200 V, V GS = 0 V, Tj = 25 ˚C - 0.1 1 µA
VDS = 200 V, V GS = 0 V, Tj = 125 ˚C - 2 60
VDS = 130 V, V GS = 0 V, Tj = 25 ˚C - - 30 nA
VDS = 70 V, VGS = 0.2 V, Tj = 25 ˚C - - 1 µA
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 1 10
Drain-Source on-state resistance RDS(on) Ω
VGS = 4.5 V, ID = 0.12 A - 14 26
VGS = 2.8 V, ID = 0.02 A - 14.5 28

Data Sheet 2 05.99

 BS 107

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 0.12 A 0.06 0.17 -
Input capacitance Ciss pF
VGS = 0 V, V DS = 25 V, f = 1 MHz - 60 80
Output capacitance Coss
VGS = 0 V, V DS = 25 V, f = 1 MHz - 8 12
Reverse transfer capacitance Crss
VGS = 0 V, V DS = 25 V, f = 1 MHz - 3.5 5
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 0.24 A
RG = 50 Ω - 5 8
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 0.24 A
RG = 50 Ω - 8 12
Turn-off delay time td(off)
VDD = 30 V, VGS = 10 V, ID = 0.24 A
RG = 50 Ω - 12 16
Fall time tf
VDD = 30 V, VGS = 10 V, ID = 0.24 A
RG = 50 Ω - 15 20

Data Sheet 3 05.99

 BS 107

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TA = 25 ˚C - - 0.13
Inverse diode direct current,pulsed ISM
TA = 25 ˚C - - 0.52
Inverse diode forward voltage V SD V
VGS = 0 V, IF = 0.5 A - 0.9 1.2

Data Sheet 4 05.99

 BS 107

Power dissipation Drain current

Ptot = ƒ(TA) ID = ƒ(TA)
parameter: VGS ≥ 4 V

1.2 0.14

W A

0.12
1.0
Ptot ID 0.11
0.9
0.10
0.8
0.09
0.7 0.08

0.6 0.07

0.5 0.06

0.05
0.4
0.04
0.3
0.03
0.2
0.02
0.1 0.01
0.0 0.00
0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160
TA TA

Safe operating area ID=f(VDS) Drain-source breakdown voltage

parameter : D = 0.01, TC=25˚C V(BR)DSS = ƒ(Tj)

240

230
V(BR)DSS
225

220

215

210

205

200

195

190

185
180
-60 -20 20 60 100 ˚C 160
Tj

Data Sheet 5 05.99

 BS 107

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs , Tj = 25 ˚C parameter: tp = 80 µs, Tj = 25 ˚C

0.30 80
Ptot = 1W k a b c
A li
j hgf e
0.26
d
Ω
VGS [V]
ID 0.24 a 2.0 RDS (on)
b 2.5 60
0.22
c 3.0
0.20
d 3.5
50
0.18 e 4.0
f 4.5
0.16 c
g 5.0 40
0.14 h 6.0
0.12 i 7.0
30
j 8.0
0.10
k 9.0
0.08 b l 10.0 20 d
0.06 f e
k ig
l j h
0.04 10 VGS [V] =
a a b c d e f g h i j k l
0.02 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0
0.00 0
0 2 4 6 8 V 11 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 A 0.18
VDS ID

Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,
VDS≥ 2 x ID x RDS(on)max V DS≥2 x ID x RDS(on)max

0.40 0.30
S
A 0.26
ID gfs 0.24
0.30
0.22
0.20
0.25
0.18
0.16
0.20
0.14
0.12
0.15
0.10

0.10 0.08
0.06

0.05 0.04
0.02
0.00 0.00
0 1 2 3 4 5 6 7 8 V 10 0.00 0.05 0.10 0.15 0.20 A 0.30
VGS ID

Data Sheet 6 05.99

 BS 107

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj )
parameter: ID = 0.12 A, VGS = 4.5 V parameter: VGS = VDS, ID = 1 mA

65 4.6
Ω V

55 4.0
RDS (on) VGS(th)
50 3.6

45 3.2

40 2.8
35
98% 2.4
30 98%
2.0
25 typ
1.6
20
typ
1.2
15 2%
10 0.8

5 0.4
0 0.0
-60 -20 20 60 100 ˚C 160 -60 -20 20 60 100 ˚C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS=0V, f = 1 MHz parameter: Tj , tp = 80 µs

10 3 10 0

pF A
C IF

10 2 10 -1

Ciss

10 1 10 -2
Coss Tj = 25 ˚C typ
Tj = 150 ˚C typ
Crss Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)

10 0 10 -3
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Data Sheet 7 05.99