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mm
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on

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Current and drift
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conditions one
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this is
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is not at all possible .

but this discontinuity decrease

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want exponential
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↳ Ideally Kong in Current .

decrease

channel 10mV drop may give

↳
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more drop of

to this in PLANAR TECH .

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[ How

by
good
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.
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- - - -

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CURRENTS 4

HUGE LEAKAGE "

Biased PN Junctions
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Beware of Forward -
-
-
 GATE LEAKAGE : -

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mm
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Thin ⇐ p
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Tunnelling
.

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Greatest Advantage
channel fIoT
Long
uantum
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↳
.

to many
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while
problem Carefull
→ Can be a potential
the
circuit .

designing
FHORTCHANNELEFFECTS -
-
-

Modulation (
into channel
Drain junction .

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limitation vos
-

(
electron ,

velocity of
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,

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.

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-

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.
Forward

5. Substitute
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leakage
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.

.
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mmmm
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s

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n - substrate

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holes at the top of
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the
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load

CHARGING ID15 CHARGING I

-
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change
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mmmm

VDD instantaneous operation .

① Yp 0 to

Transistor in saturation region .

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in
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2

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.
=

II. I III. "ok.

Reg = VDD
UDD

Ree=Ii¥-I¥
Reg =
? It =D

establish R - C network .

taken to
Reg is
source discharging
Current
Constant
+ I0

I
Region of

f) Operation
.
•

I I .
Vo

}
VDSATN
I

a
:*÷:*
I
17
2

§ (* ) =L
'
=O
Reg =

I0 1IO I
1 I =

I =
Rep CL ,
=

¥nxCi= Iot .

1
t 0.69 Reg Ce

/t=asvema
t.CN#t=o.69xgIx
=
'

+4 ! 2Io

Current foure model

Constant
When 4=0 model
Current
.

is the

l=O=DCONSTANTCURRENTS0UR-
 Holt)
-2
method
I

Invalid because of

change of operation
in
region
to linear)
(saturation

④
/Req=¥Y
Io = kn
'

¥ His satin ((
VDD -
Vtn) -

] Velocity
saturation

Utf Saturation
f- kin ¥ ( VDD
-

Io =

/Reqa Txn Reg drops by x①

Double the
width of
VDD
is large =D VDD -
Vtn -

VD{ I

⑦ VDD
Udai
not a
function of
=D Reg is
Course)
large ( in
this .

taken as

Vpp is
always

/
 ¥58③

*i¥ tii
Vasco
IT i

'
! I

¥
'

:
¥
I I ①

"
→ us .

* noise

C = ↳ × Series
with Cdep

( =
CoxCa#
Cox
+
Cdep
#
as Vast Surface charge mode
and
Inversion
=D Depletion to the field
reduced
as

the Cdep
is
the top of
terminated
is compete ly
the channel .

# and reaches
C again
cdep to =D
Value
original
.

the
TXN is linear region of operation to ③
started =D near
↳ Inversion is already
worried about
=D We
are
only
Co=Co×W .

SATURATION ( IDEAL)
④ D

6%4 Vs
""

÷ .
•
s ¥B
III , so

G=CDt↳
because ,

mask
acts its
.

as own

[ =

Cut
Cox WL

# CGB =Cg ,
Cons =
Cop
= 0 .

6GB
Saturation CGs=Ih
off
,

pinch
.
-

Due
to

÷÷÷: Loy Lou

D. annual

even
is done to make

distribution of defects labnoomahih.es

overlap Capacitance
a=Co×oLovW Gfeftannt #g. given
a
( Lou
,
L
reduced
.

2 Coy

✓
CG net
=
Cgt
IN Loy
Cox WL1-2CO
×
↳ net =

CGnet=Co×WfL-2LaT✓ width CH) of

TX =D Canet F.
increase
if we

⑦ CDBandc.si# Capacitance
.

↳ PN junction Depletion

p!!n III.II
'
"

am

:*:[
Could
⑦ CG = Cox HL t 2
'

ca.ie#aco.FU me

IN # CGI Dimensions .

=D =D
* DIFFUSION CAPACITANCE ! -

mmmm
mmm

NA 4- ¥7 4 "±
¥¥N/¥
o-oioi.io I

# ① ① i. ④ ④
Capacitance ea
=
Cjo
µ µ
Hole
I
Cjo=#I¥)¥
Lone NA

Cj =CjoWL
.

=D

⑦
Top VIEW

÷:÷¥:
i:.
1-

accounted for i%→

is .

Gate as
or ;
under the
.

:#
'
I'

channel length :

length
Drawn ;
↳ i ii
Intended Channel
.

i i.

ci.capaatanah.ua .

,
region
Depletion as
there ←¥
"
hI[op other
-
.

side
.

"
"

!a
①
↳ot=Gt
↳ A=WXLs(Bottom
plate Capacitance .
② (perimeter Capacitance) SIDEWALL CAPACITACE in

Constant
↳µ =
Xj CW1-2LS) Cj
Xj =

Technology
Constant
Wt2↳) Cjsw =
Technology
=D
Csw =
Cjsw (

CDB=CBot-Csw=CjthemWLs-Cj¥tumsµ(Ht2F
[
.

e- .

same)
Csis (if Bias is
i

CDB =

② Csis
CG =

=
IN

Cars
fcoxl
=
+2 " " )

WIG ↳ + GS1N (t +
a
¥ )) } .FI?pIaene
on µ .

* Rea =
? '¥I -
I .

scale
Cap linearly
with µ
④
.

scale all
If we

if /WF CI ReqTf
↳ IN determines delay So .

,
Correct ft

to be selected .

is
always
W
=D Independent of
Parasitic
delay C×Req Law , Rafa .
 its Capacitance delay
Parasitic
delay =D own

We
Independent of

Go I
m
Cj
=

↳ emphen.cat Formula .