TECHNICAL UNIVERSITY OF MOMBASA
FACULTY OF APPLIED SCIENCES
MATHEMATICS AND PHYSICS DEPARTMENT
UNIVERSITY EXAMINATION FOR BACHELOR OF TECHNOLOGY DEGREE IN
APPLIED PHYSICS (BTAP)
EEE 4250: ANALOGUE ELECRONICS
END OF SEMESTER EXAMINATION
SERIES: May Series 2016:
TIME: 2 HOURS DATE: May 2016
Instructions to Candidates
You should have the following for this examination
-Answer Booklet, examination pass and student ID
- This paper consists of FIVE questions. Attempt Question ONE and any other TWO questions.
- Do not write on the question paper.
- Marks may be awarded for clear work showing steps followed.
- The following constants and h -parameters may be useful:
i) Transistor 2N3904 h-parameters:
- h11 = 3.5kΩ; h11 = 1.3 x 10-4; h21 = 120; h22 = 85µS
ii) Conversion to CB amplifier parameter
h
- hib ie
D
h ie hoe hre (h fe )
- heb
D
h fe (1 hre ) hie hoe )
- D h fb
D
- D (1 h fe )(1 hre ) hie h oe
QUESTION ONE (30MKS)
a) (i) What is a P-N junction? (1mk)
(ii) Sketch a labeled diagram to show a simple P-N junction. (2mks)
(iii) Explain how to forward bias a PN junction. (2mks)
(iv) Explain how to reverse bias a PN junction. (2mks)
(v) What is a diode? (2mrks)
b) (i) What is an operational amplifier? (1mk)
(v) An operational amplifier has a voltage gain of 500 which falls to 100 when a negative
feedback is applied. Calculate the feedback fraction, m. (4mks)
c) (i) Explain what is meant by positive feedback of an operational amplifier. (1mk)
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(ii) State four effects of positive feedback. (4mks)
d) (i) What is an oscillator? (1mk)
(ii) Differentiate between a damped oscillator and an undamped oscillator. (4mks)
e) (i) Give any two h-parameters used to analyze a two port unloaded linear network of
transistors. (2mks)
(ii) Explain how the h-parameters you have given above are obtained. (4mks)
QUESTION TWO (20MKS)
a) What happens inside the p-n Junction Diode? (4mks)
b) Using a sketch diagram;
(i) Explain what happen when the diode is forward biased? (5mks)
(ii) Explain what happens in the Reverse biased? (5mks)
c) (i) What is a solar cell? (2mks)
(ii) Using a sketch diagram explain how a solar cell operates. (4mks)
QUESTION THREE (20MKS)
The circuit below is of a CB transistor amplifier. Study it and use it to answer the questions that
follow. Given that the amplifier has a quiescent collector current of about 1mA, use the h-
parameters for 2N3904 to determine;
(a) Ai ; Av; Ai Zin and Zout for this amplifier. (12mks)
b) If the h-parameter of the transistor were for CE configuration as follows: hie 1000 ;
hre 3.5 10 4 ; h fe 55 and hoe 20S . Find the current gain, Ai and voltage gain, Av if rL
=2kΩ. (8mks)
QUESTION FOUR (20MKS)
a) (i) What is a field Effect Transistor? (2mks)
(ii) Sketch a labeled circuit symbol of a Field Effect Transistor. (2mks)
(iii) What is a bipolar transistor? (2mks)
(iv) State one use of a bipolar transistor. (1mk)
(v) Give any two types of Bipolar transistors. (2mks)
(vi) What is a Solar cell? (1mk)
b) Study the hybrid model shown below. The circuit demonstrates h-parameter analysis of a
transistor network.
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(i) Given that, V1 = 35.2mV while i1 = 0.013mA, determine h11. (2mks)
(ii) Given that,i2 = 1.6mA and i1 = 0.03mA, determine h21. (2mks)
c) What are the following power electronic devices:
i. Diac . (1mk)
ii. Triac. (1mk)
iii. Thyristor. (1mrk)
iv. Silicon controlled rectifier. (1mrk)
v. Gate-Turn-Off switch. (1mk)
vi. Uni-junction transistor. (1mk)
QUESTION FIVE (20MKS)
a) (i) Differentiate between a positive and a negative feedback. (2mks)
(ii) Give two ways in which negative feedback can be classified. (1mk)
b) In a class A transistor operation amplifier, the Q-point is located at 200mA, 10V. When a
signal is applied, the collector current swings between 440mA and 40mA while the voltage
swings between 12V and 1 V respectively. Find the ;
i. Output AC power (3mks)
ii. Output AC power (3mks)
iii. Efficiency (3mks)
iv. Power dissipated (2mks)
c) A germanium transistor has a thermal resistor at its junction as 0.33 0C/mW and the apparent
temperature is 280C. Calculate;
(i) the maximum power dissipation that can be allowed without heat sink. (3mks)
(ii) the maximum power that can be allowed if a heat sink is used which reduces the
thermal resistance of the transistor to 0.09 0C/mW. (3mks)
END
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