MOSFET Interview Question Answer
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State the full form of MOSFET
Metal oxide field effect transistor
How many terminals the MOSFET consists of?
Three terminals : Source, Drain and Gate
Describe the main advantage of the Power MOSFET over other semiconductor
devices.
Advantages of the MOSFET
Low input power
High switching speed
Whether the MOSFET is voltage controlled or current controlled device? Why?
Voltage controlled device
The MOSFET is a voltage-controlled majority charge carrier device in the output current
is controlled by the input voltage. The conduction of current in the n channel MOSFET is
done only by electrons whereas the current conduction in the p channel is done by holes.
What is reason behind the name MOSFET?
The majority charge carriers in the MOSFET are controlled by gate voltage. The gate is
insulated by metal oxide layer therefore it is called as MOSFET.
Describe the different types of MOSFET.
Types of MOSFET
Depletion enhancement MOSFET ( 1 ) N channel and ( 2 ) P channel
Enhancement MOSFET ( 1 ) N channel and ( 2 ) P channel
Which is the operating mode of the Depletion enhancement ( DE ) MOSFET?
The operating mode of DE MOSFET
Depletion mode
Enhancement mode
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Whether the MOSFET is operated at low voltage?
No, the MOSFET is not operated below 500 Voltage.
What do you mean by the Depletion mode and Enhancement mode in the MOSFET?
Depletion mode
When the negative gate to source voltage is applied to N channel MOSFET, it is called as
depletion mode of the MOSFET.
Enhancement mode
When the positive gate to source voltage is applied to N channel MOSFET, it is called as
enhancement mode of the MOSFET.
Why the vertical structure of the MOSFET is used?
The vertical structure of the MOSFET is used in order to achieve
High current rating and
High break down voltage
Whether the doping level in the P type material and N type material is same in the N
channel MOSFET?
Doping level
The two ends n+ type material is heavily doped whereas the middle P type material is
moderately doped in the N channel MOSFET. The n- drift layer has lowest doping level.
Which parameter greatly affects the breakdown voltage of the n channel MOSFET?
n- drift drain layer
Which parameter affects the ON state resistance of the MOSFET?
Geometric shape of source regions
In which type of MOSFET, there is no physical channel?
Enhancement MOSFET
Explain the term : Cut off region and ohmic region
Cut off region
When the gate to source voltage is less than the threshold voltage, the MOSFET is
operated in the cut off region. The applied voltage must be less than the break down
voltage of the MOSFET. No drain current flows.
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Ohmic region
The MOSFET is operated in the ohmic region when the gate to source voltage is greater
than the gate to source threshold voltage ( VGS > VGS (TH) ).
The drain current is almost directly proportional to drain to source voltage for small value
drain to source voltage.
In which region, the power dissipation is very high in the MOSFET?
Active region
Give reason : There is no current flow between drain to source in the MOSFET
without gate bias.
The current does not flow between drain to source in the MOSFET without gate bias due
to two back-to-back PN junction diode
Describe the disadvantage of the planner type MOSFET construction.
The planner type construction has long source to drain channel therefore large on state
resistance.
Which are the resistances present in the internal circuit of the MOSFET?
Internal resistance in the MOSFET
Source region resistance
Drift region resistance
Drain resistance and
Channel resistance
Describe the effect of gate to source voltage on the on-state drain to source
resistance.
As the gate to source voltage increases, the on-state drain to source resistance
decreases and vice versa.
What is main reason for switching delay in the MOSFET?
The main reason for switching delay is due to charging and discharging of input and
output capacitors in the MOSFET.
Give reason : The parallel connection of the MOSFET is easily done.
The on-state resistance of the MOSFET has positive temperature co – efficient therefore
the parallel connection is easily done.
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Why the switching speed of the Power MOSFET is higher than the bipolar
transistors?
Switching speed
The Power MOSFET is a unipolar device.
The current conduction is done through only majority charge carriers. The turn off delay
does not occur due to recombination of minority charge carriers. Therefore, the speed of
the Power MOSFET is higher than the bipolar transistors.
State the applications of the Power MOSFET.
Applications of Power MOSFET
Speed control of ac and dc motors
Switching device in stepper motor controllers
Lighting control
Medical equipment
Relays
Induction heating
Robotics
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