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INA185 Current-Sensor

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21 views31 pages

INA185 Current-Sensor

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Product Order Technical Tools & Support &

Folder Now Documents Software Community

INA185
SBOS378 – MARCH 2019

INA185 Ultra-small, bidirectional, precision low-side and high-side, voltage output


current-sense amplifier in SOT-563
1 Features 3 Description
1• SOT-563 package (1.6 mm × 1.6 mm) The INA185 current sense amplifier is designed for
use in cost-sensitive space constrained applications.
– 39% smaller footprint than SC70 This device is a bidirectional, current-sense amplifier
– 0.55 mm package height (also called a current-shunt monitor) that senses
• Common-mode range (VCM): –0.2 V to +26 V voltage drop across a current-sense resistor at
common-mode voltages from –0.2 V to +26 V,
• High bandwidth: 350 kHz (A1 devices)
independent of the supply voltage. The INA185
• Offset voltage: integrates a matched resistor gain network in four,
– ±55 µV (max) at VCM = 0 V fixed-gain device options: 20 V/V, 50 V/V, 100 V/V, or
– ±100 µV (max) at VCM = 12 V (A4 device) 200 V/V. This matched gain resistor network
minimizes gain error and reduces the temperature
• Output slew rate: 2 V/µs drift.
• Bidirectional current-sensing capability
The INA185 operates from a single 2.7-V to 5.5-V
• Accuracy: power supply. The device draws a maximum supply
– ±0.2% maximum gain error (A1, A2, A3) current of 260 µA and features high slew rate and
– 0.5-µV/°C maximum offset drift bandwidth making this device an excellent choice for
many power-supply and motor-control applications.
• Gain options:
– 20 V/V (A1 devices) The INA185 is available in a low profile 6-pin, SOT-
563 package, and has a body size of size of only
– 50 V/V (A2 devices) 2.56 mm2, including the device pins. All device
– 100 V/V (A3 devices) options are specified over the extended operating
– 200 V/V (A4 devices) temperature range of –40°C to +125°C.
• Quiescent current: 260 µA (max) Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
2 Applications
1.60 mm × 1.60 mm
INA185 SOT-563 (6)
• Motor control (including pins)
• Battery monitoring (1) For all available packages, see the package option addendum
at the end of the data sheet.
• Power management
• Lighting control
• Overcurrent detection
• Solar inverters
Typical Application Circuit
Bus Voltage, VCM Power Sup ply, VS
Up To 26 V 2.7 V to 5.5 V

RSENS E
Loa d

INA185 VS
Microco ntr oller
IN±

± OUT
ADC
+
IN+ REF

GND

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA185
SBOS378 – MARCH 2019 www.ti.com

Table of Contents
1 Features .................................................................. 1 8 Application and Implementation ........................ 17
2 Applications ........................................................... 1 8.1 Application Information............................................ 17
3 Description ............................................................. 1 8.2 Typical Application .................................................. 21
4 Revision History..................................................... 2 9 Power Supply Recommendations...................... 23
5 Pin Configuration and Functions ......................... 3 9.1 Common-Mode Transients Greater Than 26 V ...... 23
6 Specifications......................................................... 4 10 Layout................................................................... 24
6.1 Absolute Maximum Ratings ..................................... 4 10.1 Layout Guidelines ................................................. 24
6.2 ESD Ratings.............................................................. 4 10.2 Layout Example .................................................... 24
6.3 Recommended Operating Conditions....................... 4 11 Device and Documentation Support ................. 25
6.4 Thermal Information .................................................. 4 11.1 Device Support...................................................... 25
6.5 Electrical Characteristics........................................... 5 11.2 Documentation Support ........................................ 25
6.6 Typical Characteristics .............................................. 6 11.3 Receiving Notification of Documentation Updates 25
7 Detailed Description ............................................ 12 11.4 Community Resources.......................................... 25
7.1 Overview ................................................................. 12 11.5 Trademarks ........................................................... 25
7.2 Functional Block Diagrams ..................................... 12 11.6 Electrostatic Discharge Caution ............................ 25
7.3 Feature Description................................................. 12 11.7 Glossary ................................................................ 25
7.4 Device Functional Modes........................................ 14 12 Mechanical, Packaging, and Orderable
Information ........................................................... 25

4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

DATE REVISION NOTES


March 2019 * Initial release.

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5 Pin Configuration and Functions

INA185: DRL Package


6-Pin SOT-563
Top View

OUT 1 6 VS

GND 2 5 REF

IN+ 3 4 IN±

Not to scale

Pin Functions
PIN
TYPE DESCRIPTION
NAME NO.
GND 2 Analog Ground
Current-sense amplifier negative input. For high-side applications, connect to load
IN– 4 Analog input side of sense resistor. For low-side applications, connect to ground side of sense
resistor.
Current-sense amplifier positive input. For high-side applications, connect to bus-
IN+ 3 Analog input voltage side of sense resistor. For low-side applications, connect to load side of
sense resistor.
OUT 1 Analog output Output voltage
REF 5 Analog input Reference input
VS 6 Analog Power supply, 2.7 V to 5.5 V

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6 Specifications

6.1 Absolute Maximum Ratings


over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VS Supply voltage 6 V
Differential (VIN+) – (VIN–) –26 26
Analog inputs, IN+, IN– (2) V
Common-mode (3) GND – 0.3 26
VREF Reference voltage GND – 0.3 VS + 0.3 V
VOUT Output voltage (3) GND – 0.3 VS + 0.3 V
TA Operating temperature –55 150 °C
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
(3) Input voltage at any pin can exceed the voltage shown if the current at that pin is limited to 5 mA.

6.2 ESD Ratings


VALUE UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±3000
V(ESD) Electrostatic discharge V
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions


over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCM Common-mode input voltage -0.2 12 26 V
VS Operating supply voltage 2.7 5 5.5 V
TA Operating free-air temperature –40 125 °C

6.4 Thermal Information


INA185
(1)
THERMAL METRIC DRL (SOT-563) UNIT
6 PINS
RθJA Junction-to-ambient thermal resistance 230.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 94.1 °C/W
RθJB Junction-to-board thermal resistance 112.8 °C/W
ψJT Junction-to-top characterization parameter 3.8 °C/W
ψJB Junction-to-board characterization parameter 112.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.

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6.5 Electrical Characteristics


at TA = 25°C, VSENSE = VIN+ – VIN–, VS = 5 V, VREF = VS / 2, and VIN+ = 12 V (unless otherwise noted)
PARAMETER CONDITIONS MIN TYP MAX UNIT
INPUT
A1 device 86 100
Common-mode rejection VIN+ = 0 V to 26 V, VSENSE = 0 mV,
CMRR A2, A3 devices 96 100 dB
ratio, RTI (1) TA = –40°C to +125°C
A4 devices 106 120
A1 devices ±25 ±135
VSENSE = 0 mV, VIN+ = 0 V A2, A3, A4
±5 ±55
devices
VOS Offset voltage, RTI μV
A1 devices ±100 ±450
VSENSE = 0 mV, VIN+ = 12 V A2, A3 devices ±25 ±130
A4 device ±25 ±100
dVOS/dT Offset drift, RTI VSENSE = 0 mV, TA = –40°C to +125°C 0.2 0.5 μV/°C
Power supply rejection ratio,
PSRR VS = 2.7 V to 5.5 V, VIN+ = 12 V, VSENSE = 0 mV ±8 ±30 μV/V
RTI
VSENSE = 0 mV, VCM = 0 V -6
IIB Input bias current μA
VSENSE = 0 mV 75
IIO Input offset current VSENSE = 0 mV ±0.05 μA
OUTPUT
A1 devices 20
A2 devices 50
G Gain V/V
A3 devices 100
A4 devices 200
A1, A2, A3
VOUT = 0.5 V to VS – 0.5 V, ±0.05% ±0.2%
EG Gain error devices
TA = –40°C to +125°C
A4 device ±0.07% ±0.25%
Gain error drift TA = –40°C to +125°C 1.5 8 ppm/°C
Nonlinearity error VOUT = 0.5 V to VS – 0.5 V ±0.01%
Maximum capacitive load No sustained oscillation 1 nF
(2)
VOLTAGE OUTPUT
VSP Swing to VS RL = 10 kΩ to GND, TA = –40°C to +125°C (V+) – 0.02 (V+) – 0.026 V
RL = 10 kΩ to GND, VIN+ – VIN– = –10mV, (VGND) + (VGND) +
VSN Swing to GND V
TA = –40°C to +125°C 0.0005 0.0035
(VGND) + (VGND) +
A1 devices
RL = Open, VIN+ – VIN– = 0mV, 0.0005 0.006
VSG Zero current swing to GND V
VREF = 0 V, TA = –40°C to +125°C A2, A3, A4 (VGND) + (VGND) +
devices 0.0005 0.012
FREQUENCY RESPONSE
A1 devices 350
A2 devices 210
BW Bandwidth CLOAD = 10 pF kHz
A3 devices 150
A4 devices 105
SR Slew rate 2 V/μs
(1)
NOISE, RTI
Voltage noise density 40 nV/√Hz
POWER SUPPLY
VSENSE = 0 mV 200 260
IQ Quiescent current μA
VSENSE = 0 mV, TA = –40°C to +125°C 300

(1) RTI = referred-to-input.


(2) See Typical Characteristic curve, Output Voltage Swing vs Output Current (Figure 19).

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6.6 Typical Characteristics


at TA = 25°C, VS = 5 V, VREF = VS / 2, and VIN+ = 12 V (unless otherwise noted)

Population
Population

-170
-155
-140
-125
-110
-95
-80
-65
-50
-35
-20

100
115
130
145
-5
10
25
40
55
70
85
40
80
0
-440
-400
-360
-320
-280
-240
-200
-160
-120
-80
-40

120
160
200
240
280
320
360
400 D001 D002
Input Offset Voltage (PV) Input Offset Voltage (PV)

Figure 1. Input Offset Voltage Production Distribution A1 Figure 2. Input Offset Voltage Production Distribution A2
Population

Population
-195
-180
-165
-150
-135
-120
-105

-130
-120
-110
-100
-90
-75
-60
-45
-30
-15

105
120

-90
-80
-70
-60
-50
-40
-30
-20
-10
15
30
45
60
75
90

10
20
30
40
50
60
70
80
0

D003 D004
Input Offset Voltage (PV) Input Offset Voltage (PV)

Figure 3. Input Offset Voltage Production Distribution A3 Figure 4. Input Offset Voltage Production Distribution A4
100
A1
A2
A3
50 A4
Offset Voltage ( PV)

Population

-50

-100
-50 -25 0 25 50 75 100 125 150
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5

10
15
20
25
30
35
40
45
50
0
5

Temperature (qC) D005


D006
Common-Mode Rejection Ratio (PV/V)

Figure 5. Offset Voltage vs Temperature Figure 6. Common-Mode Rejection Production Distribution


A1

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Typical Characteristics (continued)


at TA = 25°C, VS = 5 V, VREF = VS / 2, and VIN+ = 12 V (unless otherwise noted)
Population

Population
-20
-18
-16
-14
-12
-10

-11
-10
-8
-6
-4
-2

10
12
14
16
18
20
22

-9
-8
-7
-6
-5
-4
-3
-2
-1

10
0
2
4
6
8

0
1
2
3
4
5
6
7
8
9
D007 D008
Common-Mode Rejection Ratio (PV/V) Common-Mode Rejection Ratio (PV/V)

Figure 7. Common-Mode Rejection Production Distribution Figure 8. Common-Mode Rejection Production Distribution
A2 A3
10
A1
Common-Mode Rejection Ratio (PV/V)
8 A2
6 A3
A4
4
2
Population

0
-2
-4
-6
-8
-10
-50 -25 0 25 50 75 100 125 150
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1

10
11
0
1
2
3
4
5
6
7
8
9

Temperature (qC) D010


D009
Common-Mode Rejection Ratio (PV/V)

Figure 9. Common-Mode Rejection Production Distribution Figure 10. Common-Mode Rejection Ratio vs Temperature
A4
Population
Population

-0.145

-0.115

-0.085

-0.055

-0.025
-0.16

-0.13

-0.1

-0.07

-0.04

-0.01
0.005
0.02
0.035
0.05
0.065
0.08
0.095
0.11
0.125
0.14
0.155
-0.14
-0.13
-0.12
-0.11
-0.1
-0.09
-0.08
-0.07
-0.06
-0.05
-0.04
-0.03
-0.02
-0.01

0.01
0.02
0.03
0.04
0.05
0.06
0.07
0

D011 D012
Gain Error (%) Gain Error (%)

Figure 11. Gain Error Production Distribution A1 Figure 12. Gain Error Production Distribution A2

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Typical Characteristics (continued)


at TA = 25°C, VS = 5 V, VREF = VS / 2, and VIN+ = 12 V (unless otherwise noted)
Population

Population
-0.155

-0.125

-0.095

-0.065

-0.035

-0.005

-0.265

-0.215

-0.165

-0.115

-0.065

-0.015
-0.17

-0.14

-0.11

-0.08

-0.05

-0.02

0.01
0.025
0.04
0.055
0.07
0.085

0.115
0.13
0.145

-0.29

-0.24

-0.19

-0.14

-0.09

-0.04

0.01
0.035
0.06
0.085
0.11
0.135
0.16
0.185
0.21
0.235
0.1

D013 D014
Gain Error (%) Gain Error (%)

Figure 13. Gain Error Production Distribution A3 Figure 14. Gain Error Production Distribution A4
0.4 50
A1 A1
0.3 A2 A2
A3 40 A3
0.2 A4 A4
30
Gain Error (%)

0.1
Gain (dB)

0 20

-0.1
10
-0.2
0
-0.3

-0.4 -10
-50 -25 0 25 50 75 100 125 150 10 100 1k 10k 100k 1M 10M
Temperature (qC) D015
Frequency (Hz) D016

Figure 15. Gain Error vs Temperature Figure 16. Gain vs Frequency


120 140
A1
Common-Mode Rejection Ratio (dB)

A2
Power-Supply Rejection Ratio (dB)

100 120
A3
A4
100
80
80
60
60
40
40

20 20

0 0
10 100 1k 10k 100k 1M 10 100 1k 10k 100k 1M 10M
Frequency (Hz) D017
Frequency (Hz) D018

Figure 17. Power-Supply Rejection Ratio vs Frequency Figure 18. Common-Mode Rejection Ratio vs Frequency

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Typical Characteristics (continued)


at TA = 25°C, VS = 5 V, VREF = VS / 2, and VIN+ = 12 V (unless otherwise noted)
VS 120
–40°C
25°C 100
VS – 1 125°C

Input Bias Current (PA)


80
Output Swing (V)

VS – 2
60

40
GND + 2
20

GND + 1
0

GND -20
0 5 10 15 20 25 30 35 40 45 50 55 60 -5 0 5 10 15 20 25 30
Output Current (mA) D019
Common-Mode Voltage (V) D020
Supply voltage = 5 V

Figure 19. Output Voltage Swing vs Output Current Figure 20. Input Bias Current vs Common-Mode Voltage
120 80
79
100
78
Input Bias Current (PA)

Input Bias Current (PA)

80 77
76
60
75
40
74

20 73
72
0
71
-20 70
-5 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150
Common-Mode Voltage (V) D021
Temperature (qC) D022
Supply voltage = 0 V

Figure 21. Input Bias Current vs Common-Mode Voltage Figure 22. Input Bias Current vs Temperature
(Both Inputs, Shutdown)
210 400

205
350
Quiescent Current (PA)

Quiescent Current (PA)

200
300
195
250
190

200
185

180 150
-50 -25 0 25 50 75 100 125 150 -5 0 5 10 15 20 25 30
Temperature (qC) D023
Common-Mode Voltage (V) D031

Figure 23. Quiescent Current vs Temperature Figure 24. IQ vs Common-Mode Voltage

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Typical Characteristics (continued)


at TA = 25°C, VS = 5 V, VREF = VS / 2, and VIN+ = 12 V (unless otherwise noted)
100
Input-Referred Voltage Noise (nV/—Hz)

80
70

Voltage Noise (200 nV/div)


60
50

Referred-to-Input
40

30

20

10
10 100 1k 10k 100k 1M Time (1 s/div)
Frequency (Hz) D024 D025

Figure 25. Input-Referred Voltage Noise vs Frequency Figure 26. 0.1-Hz to 10-Hz Voltage Noise (Referred-to-Input)
(A3 Devices)

VCM
Output Voltage

Common-Mode Voltage (5 V/div) VOUT


2 V/div

VOUT (100 mV/div)


Input Voltage
40 mV/div

Time (10 Ps/div) Time (25 Ps/div)


D026 D027
80-mVPP input step

Figure 27. Step Response Figure 28. Common-Mode Voltage Transient Response

Inverting Input Noninverting Input


Output Output
Voltage (2 V/div)
Voltage (2 V/div)

0V 0V

Time (250 Ps/div) Time (250 Ps/div)


D028 D029

Figure 29. Inverting Differential Input Overload Figure 30. Noninverting Differential Input Overload

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Typical Characteristics (continued)


at TA = 25°C, VS = 5 V, VREF = VS / 2, and VIN+ = 12 V (unless otherwise noted)
Supply Voltage Supply Voltage
Output Voltage Output Voltage

Voltage (1 V/div)
Voltage (1 V/div)

0V
0V
Time (10 Ps/div) Time (100 Ps/div)
D030 D032

Figure 31. Start-Up Response Figure 32. Brownout Recovery


1000
500 A1
A2
200 A3
100 A4
Output Impedance (:)

50
20
10
5
2
1
0.5
0.2
0.1
10 100 1k 10k 100k 1M 10M
Frequency (Hz) D033

Figure 33. Output Impedance vs Frequency

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7 Detailed Description

7.1 Overview
The INA185 is a 26-V common-mode current-sensing amplifier used in both low-side and high-side
configurations. This specially-designed, current-sensing amplifier accurately measures voltages developed
across current-sensing resistors on common-mode voltages that far exceed the supply voltage powering the
device. Current can be measured on input voltage rails as high as 26 V, and the device can be powered from
supply voltages as low as 2.7 V.

7.2 Functional Block Diagrams

VS

INA185

IN±

±
OUT
+

IN+ REF

GND

7.3 Feature Description


7.3.1 High Bandwidth and Slew Rate
The INA185 supports small-signal bandwidths as high as 350 kHz, and large-signal slew rates of 2 V/µs. The
ability to detect rapid changes in the sensed current, as well as the ability to quickly slew the output, make the
INA185 a good choice for applications that require a quick response to input current changes. One application
that requires high bandwidth and slew rate is low-side motor control, where the ability to follow rapid changing
current in the motor allows for more accurate control over a wider operating range. Another application that
requires higher bandwidth and slew rates is system fault detection, where the INA185 is used with an external
comparator and a reference to quickly detect when the sensed current is out of range.

7.3.2 Bidirectional Current Monitoring


The INA185 senses current flow through a sense resistor in both directions. The bidirectional current-sensing
capability is achieved by applying a voltage at the REF pin to offset the output voltage. A positive differential
voltage sensed at the inputs results in an output voltage that is greater than the applied reference voltage.
Likewise, a negative differential voltage at the inputs results in output voltage that is less than the applied
reference voltage. The output voltage of the current-sense amplifier is shown in Equation 1.
VOUT I LOAD u RSENSE u GAIN VREF

where
• ILOAD is the load current to be monitored.
• RSENSE is the current-sense resistor.
• GAIN is the gain option of the selected device.
• VREF is the voltage applied to the REF pin. (1)

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Feature Description (continued)


7.3.3 Wide Input Common-Mode Voltage Range
The INA185 supports input common-mode voltages from –0.2 V to +26 V. Because of the internal topology, the
common-mode range is not restricted by the power-supply voltage (VS) as long as VS stays within the operational
range of 2.7 V to 5.5 V. The ability to operate with common-mode voltages greater or less than VS allows the
INA185 to be used in high-side, as well as low-side, current-sensing applications, as shown in Figure 34.
Bus Supply
±0.2 V to +26 V

Direction of Positive
IN+
Current Flow

High-Side Sensing
RSENSE Common-mode voltage (VCM)
is bus-voltage dependent.

IN±

LOAD

Direction of Positive IN+


Current Flow
Low-Side Sensing
Common-mode voltage (VCM)
RSENSE is always near ground and is
isolated from bus-voltage spikes.

IN±

Figure 34. High-Side and Low-Side Sensing Connections

7.3.4 Precise Low-Side Current Sensing


When used in low-side current sensing applications, the offset voltage of the INA185 is within ±55 µV for A2, A3
and A4 devices. The low offset performance of the INA185 has two main benefits. First, the low offset allows
these devices to be used in applications that must measure current over a wide dynamic range. In this case, the
low offset improves the accuracy when the sensed currents are on the low end of the measurement range. The
other advantage of low offset is the ability to sense lower voltage drop across the sense resistor accurately, thus
allowing a lower-value shunt resistor. Lower-value shunt resistors reduce power loss in the current sense circuit,
and help improve the power efficiency of the end application.
The gain error of the INA185 is specified to be within 0.2% of the actual value for A1, A2, and A3 devices. As the
sensed voltage becomes much larger than the offset voltage, this voltage becomes the dominant source of error
in the current sense measurement.

7.3.5 Rail-to-Rail Output Swing


The INA185 allows linear current sensing operation with the output close to the supply rail and GND. The
maximum specified output swing to the positive rail is 25 mV, and the maximum specified output swing to GND is
only 3.5 mV. In order to compare the output swing of the INA185 to an equivalent operational amplifier (op amp),
the inputs are overdriven to approximate the open-loop condition specified in many op amp data sheets. The
current-sense amplifier is a closed-loop system; therefore, the output swing to GND can be limited by the offset
voltage and amplifier gain during unidirectional operation (VREF = 0 V) when there is zero current flowing through
the sense resistor. To define the maximum output voltage under the zero current condition, the INA185 Electrical
Characteristics table specifies a maximum output voltage of 6 mV for the A1 device, and 12 mV for all other
devices.

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7.4 Device Functional Modes


7.4.1 Normal Mode
The INA185 is in normal operation when the following conditions are met:
• The power supply voltage (VS) is between 2.7 V and 5.5 V.
• The common-mode voltage (VCM) is within the specified range of –0.2 V to +26 V.
• The maximum differential input signal times gain plus VREF is less than VS minus the output voltage swing to
VS.
• The minimum differential input signal times gain plus VREF is greater than the swing to GND (see the Rail-to-
Rail Output Swing section).
During normal operation, these devices produce an output voltage that is the gained-up representation of the
difference voltage from IN+ to IN– plus the reference voltage at VREF.

7.4.2 Unidirectional Mode


This device is capable of monitoring current flowing in one direction (unidirectional) or in both directions
(bidirectional) depending on how the REF pin is configured. The most common case is unidirectional, where the
output is set to ground when no current is flowing by connecting the REF pin to ground, as shown in Figure 35.
When the current flows from the bus supply to the load, the input signal across IN+ to IN– increases, and causes
the output voltage at the OUT pin to increase.
Bus Voltage
±0.2 V to +26 V Power Supply, VS
2.7 V to 5.5 V CBYPASS
RSENSE
0.1 µF
Load

INA185 VS

IN±

OUT
±
Output
+
IN+ REF

GND

Figure 35. Unidirectional Application

The linear range of the output stage is limited by how close the output voltage can approach ground under zero
input conditions. In unidirectional applications where measuring very low input currents is desirable, bias the REF
pin to a convenient value above 50 mV to get the output into the linear range of the device. To limit common-
mode rejection errors, buffer the reference voltage connected to the REF pin.
A less-frequently used output biasing method is to connect the REF pin to the power-supply voltage, VS. This
method results in the output voltage saturating at 25 mV less than the supply voltage when no differential input
signal is present. This method is similar to the output saturated low condition with no input signal when the REF
pin is connected to ground. The output voltage in this configuration only responds to negative currents that
develop negative differential input voltage relative to the device IN– pin. Under these conditions, when the
differential input signal increases negatively, the output voltage moves downward from the saturated supply
voltage. The voltage applied to the REF pin must not exceed VS.

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Device Functional Modes (continued)


7.4.3 Bidirectional Mode
The INA185 is a bidirectional current-sense amplifier capable of measuring currents through a resistive shunt in
two directions. This bidirectional monitoring is common in applications that include charging and discharging
operations where the current flowing through the resistor can change directions.
Bus Voltage
±0.2 V to +26 V Power Supply, VS
2.7 V to 5.5 V CBYPASS
RSENSE
0.1 µF
Load

INA185 VS

IN± Reference
Voltage

± OUT
Output
+
IN+ REF
+

GND ±

Figure 36. Bidirectional Application

The ability to measure this current flowing in both directions is enabled by applying a voltage to the REF pin, as
shown in Figure 36. The voltage applied to REF (VREF) sets the output state that corresponds to the zero-input
level state. The output then responds by increasing above VREF for positive differential signals (relative to the IN–
pin) and responds by decreasing below VREF for negative differential signals. This reference voltage applied to
the REF pin can be set anywhere between 0 V to VS. For bidirectional applications, VREF is typically set at mid-
scale for equal signal range in both current directions. In some cases, however, VREF is set at a voltage other
than midscale when the bidirectional current and corresponding output signal do not need to be symmetrical.

7.4.4 Input Differential Overload


If the differential input voltage (VIN+ – VIN–) times gain plus the reference voltage exceeds the voltage swing
specification, the INA185 drives the output as close as possible to the positive supply or ground, and does not
provide accurate measurement of the differential input voltage. If this input overload occurs during normal circuit
operation, then reduce the value of the shunt resistor or use a lower-gain version with the chosen sense resistor
to avoid this mode of operation. If a differential overload occurs in a fault event, then the output of the INA185
returns to the expected value approximately 20 µs after the fault condition is removed.

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Device Functional Modes (continued)


7.4.5 Shutdown Mode
Although the INA185 does not have a shutdown pin, the low power consumption of these devices allows the
output of a logic gate or transistor switch to power the INA185. This gate or switch turns on and off the INA185
power-supply quiescent current.
However, in current shunt monitoring applications, there is also a concern for how much current is drained from
the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the simplified
schematic of the INA185 in shutdown mode, as shown in Figure 37.
VS
2.7 V to 5.5 V

RPULL-UP
10 k

Bus Voltage
±0.2 V to +26 V Shutdown

RSENSE
Load

CBYPASS
0.1 µF
INA185 VS

IN±

OUT
± Output

+
IN+ REF

GND

Figure 37. Basic Circuit to Shut Down the INA185 With a Grounded Reference

There is typically more than 500 kΩ of impedance (from the combination of 500-kΩ feedback and
input gain set resistors) from each input of the INA185 to the OUT pin and to the REF pin. The amount of current
flowing through these pins depends on the voltage at the connection. For example, if the REF pin is grounded,
the calculation of the effect of the 500 kΩ impedance from the shunt to ground is straightforward. However, if the
reference is powered while the INA185 is in shutdown mode, instead of assuming 500 kΩ to ground, assume
500 kΩ to the reference voltage.
Regarding the 500-kΩ path to the output pin, the output stage of a disabled INA185 does constitute a good path
to ground. Consequently, this current is directly proportional to a shunt common-mode voltage present across a
500-kΩ resistor.
As a final note, as long as the shunt common-mode voltage is greater than VS when the device is powered up,
there is an additional and well-matched 55-µA typical current that flows in each of the inputs. If less than VS, the
common-mode input currents are negligible, and the only current effects are the result of the 500-kΩ resistors.

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8 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.

8.1 Application Information


The INA185 amplifies the voltage developed across a current-sensing resistor as current flows through the
resistor to the load or ground. The ability to drive the reference pin to adjust the functionality of the output signal
offers multiple configurations, as discussed in previous sections.

8.1.1 Basic Connections


Figure 38 shows the basic connections of the INA185. Connect the input pins (IN+ and IN–) as closely as
possible to the shunt resistor to minimize any resistance in series with the shunt resistor.
Bus Voltage Power Supply, VS
±0.2 V to +26 V 2.7 V to 5.5 V CBYPASS
RSENSE 0.1 µF
Load

INA185 VS

IN± Microcontroller
OUT
±
ADC
+
IN+ REF

GND

NOTE: To help eliminate ground offset errors between the device and the analog-to-digital converter (ADC), connect
the REF pin to the ADC reference input and then to ground. For best performance, use an RC filter between the
output of the INA185 and the ADC. See the Closed-Loop Analysis of Load-Induced Amplifier Stability Issues Using
ZOUT section for more details.

Figure 38. Basic Connections for the INA185

A power-supply bypass capacitor of at least 0.1 µF is required for proper operation. Applications with noisy or
high-impedance power supplies may require additional decoupling capacitors to reject power-supply noise.
Connect bypass capacitors close to the device pins.

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Application Information (continued)


8.1.2 RSENSE and Device Gain Selection
Maximize the accuracy of the INA185 by choosing a current-sense resistor that is as large as possible. A large
sense resistor maximizes the differential input signal for a given amount of current flow and reduces the error
contribution of the offset voltage. However, there are practical limits as to how large the current-sense resistor
can be in a given application. The INA185 has a typical input bias current of 75 µA for each input when operated
at a 12-V common-mode voltage input. When large current-sense resistors are used, these bias currents cause
increased offset error and reduced common-mode rejection. Therefore, using current-sense resistors larger than
a few ohms is generally not recommended for applications that require current-monitoring accuracy. Another
common restriction on the value of the current-sense resistor is the maximum allowable power dissipation that is
budgeted for the resistor. Equation 2 gives the maximum value for the current sense resistor for a given power
dissipation budget:
PDMAX
RSENSE
IMAX2
where:
• PDMAX is the maximum allowable power dissipation in RSENSE.
• IMAX is the maximum current that will flow through RSENSE. (2)
An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply
voltage, VS, and device swing to rail limitations. In order to make sure that the current-sense signal is properly
passed to the output, both positive and negative output swing limitations must be examined. Equation 3 provides
the maximum values of RSENSE and GAIN to keep the device from hitting the positive swing limitation.
IMAX u RSENSE u GAIN VSP VREF
where:
• IMAX is the maximum current that will flow through RSENSE.
• GAIN is the gain of the current sense-amplifier.
• VSP is the positive output swing as specified in the data sheet.
• VREF is the externally applied voltage on the REF pin. (3)
To avoid positive output swing limitations when selecting the value of RSENSE, there is always a trade-off between
the value of the sense resistor and the gain of the device under consideration. If the sense resistor selected for
the maximum power dissipation is too large, then it is possible to select a lower-gain device in order to avoid
positive swing limitations.
The negative swing limitation places a limit on how small of a sense resistor can be used in a given application.
Equation 4 provides the limit on the minimum size of the sense resistor.
IMIN u RSENSE u GAIN > VSN VREF
where:
• IMIN is the minimum current that will flow through RSENSE.
• GAIN is the gain of the current sense amplifier.
• VSN is the negative output swing of the device (see Rail-to-Rail Output Swing).
• VREF is the externally applied voltage on the REF pin. (4)
In addition to adjusting the offset and gain, the voltage applied to the REF pin can be slightly increased to avoid
negative swing limitations.

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Application Information (continued)


8.1.3 Signal Filtering
Provided that the INA185 output is connected to a high impedance input, the best location to filter is at the device
output using a simple RC network from OUT to GND. Filtering at the output attenuates high-frequency
disturbances in the common-mode voltage, differential input signal, and INA185 power-supply voltage. If filtering
at the output is not possible, or filtering of only the differential input signal is required, then apply a filter at the
input pins of the device. Figure 39 provides an example of how a filter can be used on the input pins of the
device.
Bus Voltage
±0.2 V to +26 V

RSENSE
Load VS
2.7 V to 5.5 V

1 INA185 VS
f 3dB
2S(RF RF )CF RF < 10 RINT
IN±
f±3dB

CF ± OUT VOUT
Bias
+

RF < 10 RINT REF VREF


IN+

Figure 39. Filter at Input Pins

The addition of external series resistance creates an additional error in the measurement; therefore, the value of
these series resistors must be kept to 10 Ω (or less, if possible) to reduce impact to accuracy. The internal bias
network shown in Figure 39 present at the input pins creates a mismatch in input bias currents when a
differential voltage is applied between the input pins. If additional external series filter resistors are added to the
circuit, the mismatch in bias currents results in a mismatch of voltage drops across the filter resistors. This
mismatch creates a differential error voltage that subtracts from the voltage developed across the shunt resistor.
This error results in a voltage at the device input pins that is different than the voltage developed across the
shunt resistor. Without the additional series resistance, the mismatch in input bias currents has little effect on
device operation. The amount of error these external filter resistors add to the measurement can be calculated
using Equation 6, where the gain error factor is calculated using Equation 5.
The amount of variance in the differential voltage present at the device input relative to the voltage developed at
the shunt resistor is based both on the external series resistance (RF) value as well as the internal input resistor
RINT, as shown in Figure 39. The reduction of the shunt voltage reaching the device input pins appears as a gain
error when comparing the output voltage relative to the voltage across the shunt resistor. A factor can be
calculated to determine the amount of gain error that is introduced by the addition of external series resistance.
Calculate the expected deviation from the shunt voltage to what is measured at the device input pins is given
using Equation 5:
1250 u RINT
Gain Error Factor
(1250 u RF ) (1250 u RINT ) (RF u RINT )
where:
• RINT is the internal input resistor.
• RF is the external series resistance. (5)

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Application Information (continued)


With the adjustment factor from Equation 5, including the device internal input resistance, this factor varies with
each gain version, as shown in Table 1. Each individual device gain error factor is shown in Table 2.

Table 1. Input Resistance


PRODUCT GAIN RINT (kΩ)
INA185A1 20 25
INA185A2 50 10
INA185A3 100 5
INA185A4 200 2.5

Table 2. Device Gain Error Factor


PRODUCT SIMPLIFIED GAIN ERROR FACTOR
25000
INA185A1
(21u RF ) 25000
10000
INA185A2
(9 u RF ) 10000
1000
INA185A3
RF 1000
2500
INA185A4
(3 u RF ) 2500

The gain error that can be expected from the addition of the external series resistors can then be calculated
based on Equation 6:
Gain Error (%) = 100 - (100 ´ Gain Error Factor) (6)
For example, using an INA185A2 and the corresponding gain error equation from Table 2, a series resistance of
10 Ω results in a gain error factor of 0.991. The corresponding gain error is then calculated using Equation 6,
resulting in an additional gain error of approximately 0.89% solely because of the external 10-Ω series resistors.

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8.2 Typical Application


One application for the INA185 is to monitor bidirectional currents. Bidirectional currents are present in systems
that have to monitor currents in both directions; common examples are monitoring the charging and discharging
of batteries and bidirectional current monitoring in motor control. The device configuration for bidirectional current
monitoring is shown in Figure 40. Applying stable REF pin voltage closer to the middle of device supply voltage
allows both positive- and negative-current monitoring, as shown in this configuration. Configure the INA185 to
monitor unidirectional currents by grounding the REF pin.
Bus Voltage
±0.2 V to +26 V Power Supply, VS
2.7 V to 5.5 V CBYPASS
RSENSE
0.1 µF
Load

INA185 VS

IN± Reference
Voltage

± OUT
Output
+
IN+ REF
+

GND ±

Figure 40. Measuring Bidirectional Current

8.2.1 Design Requirements


The design requirements for the circuit shown in Figure 40, are listed in Table 3

Table 3. Design Parameters


DESIGN PARAMETER EXAMPLE VALUE
Power-supply voltage, VS 5V
Bus supply rail, VCM 12 V
RSENSE power loss < 450 mW
Maximum sense current, IMAX ±20 A
Current sensing error Less than 1% at maximum current, TJ = 25°C
Small-signal bandwidth > 100 kHz

8.2.2 Detailed Design Procedure


The maximum value of the current sense resistor is calculated based on the maximum power loss requirement.
By applying Equation 2, the maximum value of the current-sense resistor is calculated to be 1.125 mΩ. This is
the maximum value for sense resistor RSENSE; therefore, select RSENSE to be 1 mΩ because it is the closest
standard resistor value that meets the power-loss requirement.
The next step is to select the appropriate gain and reduce RSENSE, if needed, to keep the output signal swing
within the VS range. The design requirements call for bidirectional current monitoring; therefore, a voltage
between 0 and VS must be applied to the REF pin. The bidirectional currents monitored are symmetric around 0
(that is, ±20 A); therefore, the ideal voltage to apply to VREF is VS / 2 or 2.5 V. If the positive current is greater
than the negative current, using a lower voltage on VREF has the benefit of maximizing the output swing for the
given range of expected currents. Using Equation 3, and given that IMAX = 20 A , RSENSE = 1 mΩ, and VREF = 2.5

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V, the maximum current-sense gain calculated to avoid the positive swing-to-rail limitations on the output is
122.5. Likewise, using Equation 4 for the negative-swing limitation results in a maximum gain of 124.75.
Selecting the gain-of-100 device maximizes the output range while staying within the output swing range. If the
maximum calculated gains are slightly less than 100, the value of the current-sense resistor can be reduced to
keep the output from hitting the output-swing limitations.
To calculate the accuracy at peak current, the two factors that must be determined are the gain error and the
offset error. The gain error of the INA185A3 is specified to be a maximum of 0.2%. The error due to the offset is
constant, and is specified to be 130 µV (maximum) for the conditions where VCM = 12 V and VS = 5 V. Using
Equation 7, the percentage error contribution of the offset voltage is calculated to be 0.65%, with total offset error
= 130 µV, RSENSE = 1 mΩ, and ISENSE = 20 A.
Total Offset Error (V)
Total Offset Error (%) = u 100%
ISENSE u RSENSE (7)
One method of calculating the total error is to add the gain error to the percentage contribution of the offset error.
However, in this case, the gain error and the offset error do not have an influence or correlation to each other. A
more statistically accurate method of calculating the total error is to use the RSS sum of the errors, as shown in
Equation 8:
Total Error (%) = Total Gain Error (%)2 + Total Offset Error (%)2 (8)
After applying Equation 8, the total current sense error at maximum current is calculated to be 0.68%, which is
less than the design example requirement of 1%.
The INA185A3 (gain = 100) also has a bandwidth of 150 kHz that meets the small-signal bandwidth requirement
of 100 kHz. If higher bandwidth is required, lower-gain devices can be used at the expense of either reduced
output voltage range or an increased value of RSENSE.

8.2.3 Application Curve


An example output response of a bidirectional configuration is shown in Figure 41. With the REF pin connected
to a reference voltage (2.5 V in this case), the output voltage is biased upwards by this reference level. The
output rises above the reference voltage for positive differential input signals, and falls below the reference
voltage for negative differential input signals.
Output Voltage
(1 V/div)

VOUT
0V VREF
Time (500 µs/div)

C002

Figure 41. Bidirectional Application Output Response

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9 Power Supply Recommendations


The input circuitry of the INA185 allows for accurate measurements beyond the power-supply voltage, VS. For
example, VS can be 5 V, whereas the bus supply voltage at IN+ and IN– can be as high as 26 V. However, the
output voltage range of the OUT pin is limited by the voltages on the VS pin. The INA185 also withstands the full
differential input signal range up to 26 V at the IN+ and IN– input pins, regardless of whether or not the device
has power applied at the VS pin.

9.1 Common-Mode Transients Greater Than 26 V


With a small amount of additional circuitry, the INA185 can be used in circuits subject to transients higher than
26 V, such as automotive applications. Use only Zener diodes or Zener-type transient absorbers (sometimes
referred to as transzorbs)—any other type of transient absorber has an unacceptable time delay. Start by adding
a pair of resistors as a working impedance for the Zener diode; see Figure 42. Keep these resistors as small as
possible; most often, around 10 Ω. Larger values can be used with an effect on gain that is discussed in the
Signal Filtering section. This circuit limits only short-term transients; therefore, many applications are satisfied
with a 10-Ω resistor along with conventional Zener diodes of the lowest acceptable power rating. This
combination uses the least amount of board space. These diodes can be found in packages as small as SOT-
523 or SOD-523.
VS
Bus Supply 2.7 V to 5.5 V CBYPASS
±0.2 V to +26 V 0.1 µF
RSENSE
Load
INA185 VS

IN±

±
RPROTECT OUT
Output
< 10 +
REF
IN+
GND

Figure 42. Transient Protection Using Dual Zener Diodes

In the event that low-power Zener diodes do not have sufficient transient absorption capability, a higher-power
transzorb must be used. The most package-efficient solution involves using a single transzorb and back-to-back
diodes between the device inputs, as shown in Figure 43. The most space-efficient solutions are dual, series-
connected diodes in a single SOT-523 or SOD-523 package. In either of the examples shown in Figure 42 and
Figure 43, the total board area required by the INA185 with all protective components is less than that of an SO-
8 package, and only slightly greater than that of an MSOP-8 package.
VS
Bus Supply 2.7 V to 5.5 V CBYPASS
±0.2 V to +26 V 0.1 µF

RSENSE
Load
INA185 VS

< 10
IN±

±
Transorb OUT
Output
+
< 10
REF
IN+
GND

Figure 43. Transient Protection Using a Single Transzorb and Input Clamps

For more information, see Current Shunt Monitor With Transient Robustness Reference Design.

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10 Layout

10.1 Layout Guidelines


• Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing
of the current-sensing resistor commonly results in additional resistance present between the input pins.
Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can
cause significant measurement errors.
• Place the power-supply bypass capacitor as close as possible to the device power supply and ground pins.
The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added
to compensate for noisy or high-impedance power supplies.
• When routing the connections from the current sense resistor to the device, keep the trace lengths as close
as possible in order to minimize any impedance mismatch..

10.2 Layout Example


Direction of Positive
Current Flow

Bus Voltage:
±0.2V to +26 V
RSHUNT

IN± 4 3 IN+
Connect REF to low
impedance voltage reference REF 5 2 GND
or to GND pin if not used.
Current
VS 6 1 OUT
Sense

VIA to Ground
Plane

CBYPASS
Power-Supply, VS
2.7 V to 5.5 V

Figure 44. Recommended Layout

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11 Device and Documentation Support

11.1 Device Support


11.1.1 Development Support
Current shunt monitor with transient robustness reference design

11.2 Documentation Support


11.2.1 Related Documentation
For related documentation see the following: Texas Instruments, INA185EVM user's guide

11.3 Receiving Notification of Documentation Updates


To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.

11.4 Community Resources


The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.

11.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information


The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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PACKAGE MATERIALS INFORMATION

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TAPE AND REEL INFORMATION

*All dimensions are nominal


Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA185A1IDRLR SOT-5X3 DRL 6 4000 180.0 8.4 1.98 1.78 0.69 4.0 8.0 Q3
INA185A1IDRLT SOT-5X3 DRL 6 250 180.0 8.4 1.98 1.78 0.69 4.0 8.0 Q3
INA185A2IDRLR SOT-5X3 DRL 6 4000 180.0 8.4 1.98 1.78 0.69 4.0 8.0 Q3
INA185A2IDRLT SOT-5X3 DRL 6 250 180.0 8.4 1.98 1.78 0.69 4.0 8.0 Q3
INA185A3IDRLR SOT-5X3 DRL 6 4000 180.0 8.4 1.98 1.78 0.69 4.0 8.0 Q3
INA185A3IDRLT SOT-5X3 DRL 6 250 180.0 8.4 1.98 1.78 0.69 4.0 8.0 Q3
INA185A4IDRLR SOT-5X3 DRL 6 4000 180.0 8.4 1.98 1.78 0.69 4.0 8.0 Q3
INA185A4IDRLT SOT-5X3 DRL 6 250 180.0 8.4 1.98 1.78 0.69 4.0 8.0 Q3

Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION

www.ti.com 23-Mar-2019

*All dimensions are nominal


Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA185A1IDRLR SOT-5X3 DRL 6 4000 183.0 183.0 20.0
INA185A1IDRLT SOT-5X3 DRL 6 250 183.0 183.0 20.0
INA185A2IDRLR SOT-5X3 DRL 6 4000 183.0 183.0 20.0
INA185A2IDRLT SOT-5X3 DRL 6 250 183.0 183.0 20.0
INA185A3IDRLR SOT-5X3 DRL 6 4000 183.0 183.0 20.0
INA185A3IDRLT SOT-5X3 DRL 6 250 183.0 183.0 20.0
INA185A4IDRLR SOT-5X3 DRL 6 4000 183.0 183.0 20.0
INA185A4IDRLT SOT-5X3 DRL 6 250 183.0 183.0 20.0

Pack Materials-Page 2
PACKAGE OUTLINE
DRL0006A SCALE 8.000
SOT - 0.6 mm max height
PLASTIC SMALL OUTLINE

1.7
1.5
PIN 1 A
ID AREA

1
6

4X 0.5
1.7
1.5
2X 1 NOTE 3

4
3

1.3 0.3 0.05


B 6X TYP
1.1 0.1 0.00

0.6 MAX
C

SEATING PLANE
0.18
6X 0.05 C
0.08 SYMM

SYMM

0.27
6X
0.15
0.1 C A B
0.4
6X 0.05
0.2
4223266/C 12/2021

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. Reference JEDEC registration MO-293 Variation UAAD

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EXAMPLE BOARD LAYOUT
DRL0006A SOT - 0.6 mm max height
PLASTIC SMALL OUTLINE

6X (0.67)
SYMM
1

6X (0.3) 6

SYMM

4X (0.5)

4
3

(R0.05) TYP
(1.48)

LAND PATTERN EXAMPLE


SCALE:30X

0.05 MAX 0.05 MIN


AROUND AROUND

SOLDER MASK METAL METAL UNDER SOLDER MASK


OPENING SOLDER MASK OPENING
NON SOLDER MASK SOLDER MASK
DEFINED DEFINED
(PREFERRED)

SOLDERMASK DETAILS

4223266/C 12/2021

NOTES: (continued)

5. Publication IPC-7351 may have alternate designs.


6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
7. Land pattern design aligns to IPC-610, Bottom Termination Component (BTC) solder joint inspection criteria.

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EXAMPLE STENCIL DESIGN
DRL0006A SOT - 0.6 mm max height
PLASTIC SMALL OUTLINE

6X (0.67)
SYMM
1

6X (0.3) 6

SYMM

4X (0.5)

4
3

(R0.05) TYP
(1.48)

SOLDER PASTE EXAMPLE


BASED ON 0.1 mm THICK STENCIL
SCALE:30X

4223266/C 12/2021

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.

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