Aug 31, 2019

Nontrivial Field Effect Transistors:

Electron Optics with p-n Junctions in Graphene

Eakkarat Pattrawutthiwong

Department of Physics, Faculty of Science, KMUTT

 2

Objectives

Literature Review Theoretical Model

Discovery of Graphene Graphene field effect transistor
Atomic Structure of Graphene Graphene pn-junction
Electronic Structure of Graphene Electron Veselago Lens
Klein Tunneling
 properties—of graphene can be addressed by describing the p two atoms per unit cell) leads to t

Publis
bands in a tight binding approximation.3 of the charge carriers in graphene

“Thewonde
rmat
eri
al”
Band structure calculations3,36 for the honeycomb lattice of graphene energy dispersion

Discovery of Graphene
shown in Fig. 3 yield an unusual electronic structure: the become independent of each ot
conduction p band and the valence p band of graphene meet a pseudospin quantum number
exactly at the corners of the hexagonal first Brillouin zone completely independent of real

With superior properties

(Fig. 4) and only there. These corners are called the Dirac points. graphene have a pseudospin inde
Three of them, labeled as K, belong to one triangular sublattice The existence of the chiral ps
➔ High Thermal conductivity
in reciprocal space, while the other three, labeled as K0 , form the a natural product of the basic la

➔ Very high Young's modulus

➔ High electron mobility

➔ etc.
Allotrope of carbon
(Castro Neto et al. 2009)
→ Contribute many research branchsublattice
of
Discovery of graphene science A
+ Promising of new era of sublattice
material science B
→ Reveals a novel
Fig. 4 Contour properties
plot of the energy in the first Brillouin zone of graphene (red hexagon). Plot of the p band s
→ Win Nobel prize in conduction band and the valence band touching at the K points. The zoomed part at the right-hand side shows the
especially Electronics structure
physics 2010
Dirac points.
Uni
1826 | Nanoscale, 2012, 4, 1824–1839
t This journal is ª The

4 cell
Mar 10, 2016

2-dimensional honeycomb structure

2 carbon atoms per unit cell
Believed to be unstable at room
temperature
Discovered in 2004, win a Nobel Prize in
physics in 2010
Andre Geim Konstantin Novoselov
 substantially with energy. The expansion of the spectrum with A共E兲 the area in k space enclosed by the orbit
around the Dirac point including t⬘ up to second order
given by
2
Graphene Band Structure
in q / K is given by
A共E兲 = ␲q共E兲2 = ␲
E 2

冉 冊
.
9t⬘a 3ta 2 2 vF2
E±共q兲 ⯝ 3t⬘ ± vF兩q兩 − ± sin共3␪q兲 兩q兩2 , 共8兲
4 8 Using Eq. 共11兲 in Eq. 共10兲, one obtains
Reciprocal space (momentum space)
where EF kF

冉 冊
m* = 2 = .
The energy dispersion ( qx vs ) near Dirac point is vF vF
Introduction
approximately␪linear
q = arctan
qy
共9兲 Photon
The electronic density n is related to the Fermi mom
energy
Pseudospin Tight in graphene E =of vF | p | ␲ n 共with contributions from the
2
binding approximation tum k as k / = 2 2 2
is the angle in momentum space. Hence, the presence E = (mc ) + (cp)
F F
⬘
t shifts in energy the position of the Dirac point and Dirac points K and K⬘ and spin included兲, which lead
breaks electron-hole symmetry. Note that upTwo to inequivalence
order points冑of ␲
= c|p|
DiracEcones
Pseudospin
共q / K兲2 the dispersion depends Conduction
on the Atband
direction Kinand K'
mo- m* = 冑n.
on sublattices BackvFscattering
mentum space and has a threefold symmetry. This is the is not allow.
so-called trigonal warping of the electronic spectrum Electron Fitting Eq.
Chirality 共13兲 to the
in graphene
preservation is governed data 共see Fig
by effective
experimental
Chiral tunneling
共Ando et al., 1998, DresselhausDirac
and point providesDirac
Dresselhaus, 2002兲. massless an estimation
Hamiltonianfor the Fermi velocity and

Rev. Mod. Phys., Vol. 81, No. 1, January–March 2009

Valence band Ĥ = vF p·̂ σ ̂

A unit cell
 is momentum operator
 is Pauli matrix operator
(Pesin & MacDonald 2012)
 m/s is Fermi velocity
Two Pseudospin inherents from the existence of two sublattices
In the effective Dirac Hamiltonian Two spinor wave function
Hamiltonian operator acts on two spinor
Two pseudospin on
wave function
sublattice A and B

( B)
2 x 2 matrix ψA
̂
H Ψ = EΨ = E ψ
7 Mar 10, 2016

A.K.Geim & K.S.Novolesov. Rise of graphene. Nat. Mater. 6, 183–191

 ous impediment to logic operations, which are all about on–off switching. top 20 global graphene patent-holders are Chinese, Japan
Doping graphene with other materials or slicing it into narrow ribbons Korean companies and universities, with Samsung wa 3
The Electronic Structure of Graphene
can open up a small band gap, but this also slows the flow of electrons. Some Chinese manufacturers say that mobile devices bea
So researchers are trying to tune its electrical properties by combining touchscreens will hit the market next year.
graphene with other monolayer materials such as boron nitride or creat- Europe has led in academic research on graphene,
ing transistors from molybdenum disulphide and tungsten diselenide9–11. development. “That,” says Kinaret, “is what we are hopin
But graphene is still a long way from replacing silicon electronics, says
Tim Harper of the technology-development company Cientifica, based Mark Peplow is a freelance writer based in Cambridge, U
in London: “Nobody will just ditch silicon unless there’s a really com-
1. Geim, A. K. & Grigorieva, I. V. Nature 499, 419–425 (2013).
pelling reason to do so.” In the near term, a graphene transistor’s biggest 2. Novoselov, K. S. et al. Science 306, 666–669 (2004).
selling point may be its ability to operate over a range of voltages, rather 3. Li, X. et al. Science 324, 1312–1314 (2009).
Ec0 might include sensors 4. Gao, L. et al. Nature Commun. 3, 699 (2012).
than any ability to switch on or off. Applications
for environmental pollutants or blood-oxygen levels, or the transmitters 5. Wang, Y. et al. ACS Nano 5, 9927–9933 (2011).
6. Yang, W. Nature Mater. 12, 792–797 (2013).
and receivers inside mobile phones. By the end of 7. Chen, J.-H., Jang, C., Xiao, S., Ishigami, M. & Fuhrer, M. S. Nature
NATURE.COM the programme’s 30-month ramp-up phase, Neu- Dirac 206–209 (2008).
For more on maier’s goal is to build 0
Evprototypes point 8. Cheng, R. et al. Proc. Natl Acad. Sci. USA 109, 11588–11592 (20
that demonstrate
Hunt, B. et al. Science 340, 1427–1430 (2013).
graphene, see graphene’s potential in these areas. “Expectations 9. 10. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A.
Nature’s Outlook: at the moment are very large,” he says. Nanotechnol. 6, 147–150 (2011).
go.nature.com/hm41sm So are the concerns of some researchers. As one 11.Liu, W. et al. Nano Lett. 13, 1983–1990 (2013).

21 NOVEMBER 2013 | VOL 503 | N

© 2013 Macmillan Publishers Limited. All rights reserved

2
p
0 ±
Ec(v) = Ec(v) E± = ± vF p
2m*
c(v)

Parabolic dispersion relation Linear dispersion relation

Non-zero band gap Zero band gap
Require more energy to High speed electron
operate massless particle
Consume less energy

Peplow, Mark. "Graphene: the quest for supercarbon." Nature News 503.7476 (2013): 327.
 3
Klein Tunneling in Graphene

Quantum Mechanics

Transmission probability decays

exponentially

Relativistic Quantum
Mechanics

Perfect tunneling at incident angle  regardless of

barrier height

Main problem: electron can not be blocked by potential barrier

 4
Electron-Optics Behaviour

The transmission of charge through the PNJ bears resemblance to the refraction of light
with negative refractive index

http://physicsworld.com/cws/article/news/2016/oct/03/negative-refraction-of-electrons-spotted-in-graphene
 and the experimental discovery of graphene now
Graphene Field Effect Transistor probe quantum electrodynamics (QED) phenom
graphene’s electronic properties. 5
QED IN A PENCIL TRACE
Model and Methodology From the point of view of its electronic prope
zero-gap semiconductor, in which low-E quasip
The charge carriers can be induced between electrons and holes byformally
valley can applying voltage
be described by the Dirac-l

0 kx – iky
H= ћνF = ћνF σ
kx + iky 0
No voltages applied  Fermi energy is at Dirac
point where k is the quasiparticle momentum, σ th
and the k-independent Fermi velocity νF pla
speed of light. The Dirac equation is a dire
graphene’s crystal symmetry. Its honeycomb la
two equivalent carbon sublattices A and B, and
bands associated with the sublattices intersect
edges of the Brillouin zone, giving rise to con
energy spectrum for |E| < 1 eV (Fig. 3).
We emphasize that the linear spectrum E =
essential feature of the band structure. Indeed, el
zero E (where the bands intersect) are composed
to the different sublattices, and their relative c
make-up of quasiparticles have to be taken in

186

Schematic of bottom-gated graphene field-effect transistor Voltage applied vs

nmat1849 Geim Progress Article.i186 186
resistivity of
graphene

A.K.Geim & K.S.Novolesov. Rise of graphene. Nat. Mater. 6, 183–191

(2007).
Wang, Shaoqing, et al. "Abnormal Dirac point shift in graphene field-effect transistors." Materials Research Express 3.9 (2016): 095602.
 c
Vc = vk/k in conduction band and ev(k) = −ħvk,
Graphene pn-junction
Vv = −vk/k in valence band (ħ is Planck’s
constant, h/2p). Figure 1 illustrates such a
6
Fig. 2. Focusing o
trons by symmetri
dispersion for electrons in n-type graphene rh = re. (A) Cl
(on the left) and p-type graphene (on the right). trajectories of ele
In a split-gate structure (Fig. 1), voltages ±U diverging from a
applied to the two gates shift the degeneracy at distance a fro
point of the electron dispersion cones down junction become c
by ħvkc on the
Voltages leftapplied
and up by to
ħvkthe two gates shift the degeneracy point of
v on the right,
the electron
gent after refractio
dispersion
thus forming a PNJcones down
separating by  on
the n-region withthe left and up by  on the right Interference-induce
2
the density of electrons re = kc /p and the p- tern in the charg
region with the density of holes rh = kv2 /p. Here, rent near the focal
kc(v) is the radius of the Fermi circle in the con- of the source-cont
duction (valence) band. and D) “Quantum
The transmission of charge through the PNJ rage” in graphene
bears resemblance to the refraction of light by left- oscillations aroun
handed metamaterials (10–12) with refractive image of a pertur
index equal to −1. As a wave enters such a Massive Particle (e.g. ele applied on the oth
of PNJ, created by
1
Physics Department, Lancaster University, Lancaster LA1 small island of
4YB, UK. 2Physics Department, Columbia University, 538 E = (mc 2 ) 2 + k(cp) 2 and (D) potential
West 120th Street, New York, NY 10027, USA. 3NEC- remote Coulomb c
Laboratories America, 4 Independence Way, Princeton, NJ
085540, USA. Nonrelativistic limit (v<<c)
*To whom correspondence should be addressed. E-mail:
Slope of the graph2 isp 2 Fermi
[email protected]
velocity E ≈ mc + + ...
2m
www.sciencemag.org SCIENCE E =2 MARCH
VOL 315 ℏvF k 2007
∂E Massless Particle (e.g. p
= vF k̂ = v Group
Electron in conduction Hole in valence ∂k m = 0velocity
band band
Ec = + ℏvF k Ev = − ℏvF k Planck’s constant
E =is cset
| p |to
1
vc = + vF k̂ vv = − vF k̂ Negative means groupv = c velocity and
momentum are anti-parallel
Graphene pn-junction 7

n=−1

N- P-type
typ region
e
reg
ion

Incident electron Transmitted electron

momentum momentum
k = kc cos θc i ̂ + kc sin θc j ̂ k = − kv cos θv i ̂ − kv sin θv j ̂

Reflected electron
momentum
k′ = − kc cos θc i ̂ + kc sin θc j ̂
Graphene pn-junction 8

n=−1

N- P-type
typ region
e
reg
ion

Electron momentum along a straight interface should be

conserved
kc sin θc = − kv sin θv

sin θc kv
=−
sin θv kc

kv
n=− Snell’s law of
kc refraction
 is assumed that the sample is ballistic, that is, Veselago lens and (B

Electron Veselago lens that both the elastic and inelastic mean free path
of electrons is larger than the typical size of the
and C) prism-shaped
focusing beam splitter in 9
the ballistic n-p-n junc-
structure. Around, but not too close to the fo-
tion in graphene-based
cus (k v r >> 1), the analytically calculated current
transistor.
qffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
is j ~ (x − a) /r [r ¼ ðx − aÞ2 þ y2 stands for
2 3

the distance from the probe to the focus]. The

anisotropy of the current distribution is caused by
the dependence of the transmission coefficient
on the incidence angle and is smeared at shorter
distances kvr < 1. The current map calculated Fer
in the vicinity of the cusp for rh ≠ re shows
characteristic patterns described by the canon-
mi
ical diffraction function for this type of wave ene
catastrophe (14). The maximum of the current rgy
would be when the probe is at the tip of the
cusp, (|n|a,0). The width-y% of the bright spot
near the cusp (Fig. 3B) or Uthe focus (Fig. 2A)
in the y direction can be estimated as y% kv ~
max[1,(½akc|n−1 − n|)¼]. For a junction with
N|n| > 1 (rh > re), the pattern
P near the cusp N is

1254 2 MARCH 2007 VOL 315 SCIENCE www.scienc

+
U

The state ‘0’ and ‘1’ can be distinguish by voltage difference

Apply voltage to top gate to focus the electron beam  high voltage
When there is no focusing, the voltage is low representing the state
‘0’
Conclusion 10

The pn-junction can be achieved by applying voltages

Electron crossing pn-junction in graphene mimics optical behaviour

and can be diffracted with negative refractive index

Electron Veselago Lensing may be an approach of fabricating

electronic devices to solve the problem of Klein tunneling
Thank you for your attention