TMCS1126

SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

TMCS1126 Precision 500kHz Hall-Effect Current Sensor With Reinforced Isolation

Working Voltage, Overcurrent Detection and Ambient Field Rejection
1 Features 3 Description
• High continuous current capability: 80ARMS The TMCS1126 is a galvanically isolated Hall-effect
• Robust reinforced isolation current sensor with industry leading isolation and
• High accuracy accuracy. An output voltage proportional to the
– Sensitivity error: ±0.1% input current is provided with excellent linearity and
– Sensitivity thermal drift: ±20ppm/°C low drift at all sensitivity options. Precision signal
– Sensitivity lifetime drift: ±0.2% conditioning circuitry with built-in drift compensation is
– Offset error: ±0.2mV capable of less than 1.4% maximum sensitivity error
– Offset thermal drift: ±2μV/°C over temperature and lifetime with no system level
– Offset lifetime drift: ±0.2mV calibration, or less than 1% maximum sensitivity error
– Non-linearity: ±0.1% including both lifetime and temperature drift with a
• High immunity to external magnetic fields one-time calibration at room temperature.
• Precision zero-current reference output AC or DC input current flows through an internal
• Fast Response conductor generating a magnetic field measured
– Signal bandwidth: 500kHz by integrated, on-chip, Hall-effect sensors. Core-
– Response time: 250ns less construction eliminates the need for magnetic
– Propagation delay: 60ns concentrators. Differential Hall sensors reject
– Overcurrent detection response: 100ns interference from stray external magnetic fields. Low
• Operating supply range: 3V to 5.5V conductor resistance increases measurable current
• Bidirectional and unidirectional current sensing ranges up to ±103A while minimizing power loss and
• Multiple sensitivity options: easing thermal dissipation requirements. Insulation
– Ranging from 15mV/A to 150mV/A capable of withstanding 5kVRMS, coupled with a
• Safety related certifications (planned) minimum of 8mm creepage and clearance, provides
– UL 1577 Component Recognition Program high levels of reliable lifetime reinforced working
– IEC/CB 62368-1 voltage. Integrated shielding enables excellent
common-mode rejection and transient immunity.
2 Applications
Fixed sensitivity allows the device to operate from a
• Solar Energy single 3V to 5.5V power supply, eliminating ratiometry
• EV charging errors and improving supply noise rejection. TI
• Power supplies provides the TMCS1126xxB as a lower-cost option.
• Industrial AC/DC
Package Information
PART NUMBER PACKAGE(1) PACKAGE SIZE(2)
TMCS1126 DVG (SOIC, 10) 10.3mm × 10.3mm

(1) For all available packages, see Section 12.

(2) The package size (length × width) is a nominal value and
includes pins, where applicable.
Passive / PFC DC V+ Bridge Driver
Rectifier
TMCS1126
Loads
TMCS1126

AC
TMCS1126

DC V–

Current Current Current

OC Control OC Control OC
Sense Sense Sense

Controller

Typical Application

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

Table of Contents
1 Features............................................................................1 8.3 Feature Description...................................................21
2 Applications..................................................................... 1 8.4 Device Functional Modes..........................................25
3 Description.......................................................................1 9 Application and Implementation.................................. 26
4 Device Comparison......................................................... 3 9.1 Application Information............................................. 26
5 Pin Configuration and Functions...................................4 9.2 Typical Application.................................................... 29
6 Specifications.................................................................. 5 9.3 Power Supply Recommendations.............................31
6.1 Absolute Maximum Ratings........................................ 5 9.4 Layout....................................................................... 32
6.2 ESD Ratings............................................................... 5 10 Device and Documentation Support..........................33
6.3 Recommended Operating Conditions.........................5 10.1 Device Nomenclature..............................................33
6.4 Thermal Information....................................................5 10.2 Device Support....................................................... 33
6.5 Insulation Specifications............................................. 6 10.3 Documentation Support.......................................... 33
6.6 Electrical Characteristics.............................................7 10.4 Receiving Notification of Documentation Updates..34
6.7 Typical Characteristics.............................................. 11 10.5 Support Resources................................................. 34
7 Parameter Measurement Information.......................... 14 10.6 Trademarks............................................................. 34
7.1 Accuracy Parameters................................................14 10.7 Electrostatic Discharge Caution..............................34
7.2 Transient Response Parameters.............................. 17 10.8 Glossary..................................................................34
7.3 Safe Operating Area................................................. 18 11 Revision History.......................................................... 34
8 Detailed Description......................................................20 12 Mechanical, Packaging, and Orderable
8.1 Overview................................................................... 20 Information.................................................................... 34
8.2 Functional Block Diagram......................................... 21

2 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

4 Device Comparison
Table 4-1. Device Comparison
ZERO CURRENT OUTPUT IIN LINEAR MEASUREMENT RANGE(1)
PRODUCT(3) SENSITIVITY
VOLTAGE VS = 5V VS = 3.3V
TMCS1126A1x 25mV/A ±96A(2) –96A to 28A(2)
TMCS1126A7x 30mV/A ±80A(2) –80A to 23.3A(2)
TMCS1126A8x 40mV/A ±60A(2) –60A to 17.5A(2)
TMCS1126A2x 50mV/A 2.5V ±48A(2) –48A to 14A(2)
TMCS1126A3x 75mV/A ±32A –32A to 9.3A
TMCS1126A4x 100mV/A ±24A –24A to 7A
TMCS1126A5x 150mV/A ±16A –16A to 4.7A
TMCS1126B6x 15mV/A –103.3A to 216.7A(2) ±103.3A(2)
TMCS1126B1x 25mV/A –62A to 130A(2) ±62A(2)
TMCS1126B9x 33mV/A –46.9A to 98.5A(2) ±46.9A(2)
TMCS1126B2x 50mV/A –31A to 65A(2) ±31A
1.65V
TMCS1126BAx 66mV/A –23.5A to 49.2A(2) ±23.5A
TMCS1126B3x 75mV/A –20.7A to 43.3A(2) ±20.7A
TMCS1126B4x 100mV/A –15.5A to 32.5A ±15.5A
TMCS1126B5x 150mV/A –10.3A to 21.7A ±10.3A
TMCS1126C1x 25mV/A –9.2A to 183A(2) –9.2A to 115A(2)
TMCS1126C2x 50mV/A –4.6A to 91.4A(2) –4.6A to 57.4A(2)
TMCS1126C3x 75mV/A 0.33V –3.1A to 60.9A(2) –3.1A to 38.3A(2)
TMCS1126C4x 100mV/A –2.3A to 45.7A(2) –2.3A to 28.7A
TMCS1126C5x 150mV/A –1.5A to 30.5A –1.5A to 19.1A

(1) Linear range limited by the maximum output swing to power supply (3V to 5.5V) and ground, not by thermal limitations.
(2) Current levels must remain below both allowable continuous DC/RMS and transient peak current safe operating areas to not exceed
device thermal limits. See the Safe Operating Area section.
(3) For more information on the device name and device options, see the Device Nomenclature section.

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

5 Pin Configuration and Functions

10 NC
9 GND
IN + 1
8 NC
7 VREF
6 VOUT
5 VOC
IN 2
4 VS
3 OC

Not to scale

Figure 5-1. DVG Package 10-Pin SOIC Top View

Table 5-1. Pin Functions

PIN
TYPE DESCRIPTION
NO. NAME
1 IN+ Analog Input Input current positive pin
2 IN– Analog Input Input current negative pin
3 OC Digital Output Overcurrent output, open-drain active low. Connect pin to GND if not used.
4 VS Analog Power supply
5 VOC Analog Input Overcurrent threshold. Sets overcurrent threshold. Connect pin to VS if not used.
6 VOUT Analog Output Output voltage
7 VREF Analog Output Zero current output voltage reference
8 NC - Reserved. Pin can be connected to GND or left floating.
9 GND Analog Ground
10 NC - Reserved. Pin can be connected to GND or left floating.

4 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage VS GND – 0.3 6 V
Analog input VOC
Analog output VOUT, VREF
GND – 0.3 (VS) + 0.3 V
Digital output OC
No Connect NC
Junction temperature TJ –65 165 °C
Storage temperature Tstg –65 165 °C

(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

6.2 ESD Ratings

VALUE UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000
V(ESD) Electrostatic discharge V
Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002(2) ±1000

(1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VS Operating supply voltage 3 5 5.5 V
TA (1) Operating free-air temperature –40 125 °C

(1) Input current safe operating area is constrained by junction temperature. Recommended condition based on use with the
TMCS1126xEVM. Input current rating is derated for elevated ambient temperatures.

6.4 Thermal Information

TMCS1126(2)
THERMAL METRIC(1) DVG (SOIC-W-10) UNIT
10 PINS
RθJA Junction-to-ambient thermal resistance 27.9
RθJC(top) Junction-to-case (top) thermal resistance 26.8
RθJB Junction-to-board thermal resistance 10.1 °C/W
ΨJT Junction-to-top characterization parameter 4.4
ΨJB Junction-to-board characterization parameter 8.3

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
note.
(2) Applies when device is mounted on the TMCS1126xEVM. For more details, see the Safe Operating Area section.

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 5

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

6.5 Insulation Specifications

PARAMETER TEST CONDITIONS VALUE UNIT
GENERAL
CLR External clearance(1) Shortest terminal-to-terminal distance through air ≥8 mm
CPG External creepage(1) Shortest terminal-to-terminal distance across the package surface ≥8 mm
CTI Comparative tracking index DIN EN 60112; IEC 60112 ≥ 600 V
Material group According to IEC 60664-1 I
Overvoltage category per IEC 60664-1 Rated mains voltage ≤ 600VRMS I-IV
VIORM Maximum repetitive peak isolation voltage AC voltage (bipolar) 1344 VPK
600 VRMS
Maximum reinforced isolation working voltage AC voltage (sine wave)
849 VDC
VIOWM
950 VRMS
Maximum basic isolation working voltage AC voltage (sine wave)
1344 VDC
VTEST = √2 x VISO, t = 60s (qualification);
VIOTM Maximum transient isolation voltage 7071 VPK
VTEST = 1.2 × VIOTM, t = 1s (100% production)
Test method per IEC 62368-1, 1.2/50µs waveform,
VIOSM Maximum surge isolation voltage(2) 10000 VPK
VTEST = 1.3 × VIOSM (qualification)
Method b1: At routine test (100% production) and preconditioning
qpd Apparent charge(3) (type test), ≤5 pC
Vini = 1.2 × VIOTM, tini = 1s; Vpd(m) = 1.875 × VIORM, tm = 1s
CIO Barrier capacitance, input to output(4) VIO = 0.4 sin (2πft), f = 1MHz 0.6 pF
VIO = 500V, TA = 25°C > 1012 Ω
RIO Isolation resistance, input to output(4) VIO = 500V, 100°C ≤ TA ≤ 125°C > 1011 Ω
VIO = 500V at TS = 150°C > 109 Ω
Pollution degree 2
UL 1577
VTEST = VISO, t = 60s (qualification);
VISO Withstand isolation voltage 5000 VRMS
VTEST = 1.2 × VISO, t = 1s (100% production)

(1) Apply creepage and clearance requirements according to the specific equipment isolation standards of an application. Take care
to maintain the creepage and clearance distance of the board design to make sure that the mounting pads of the isolator on the
printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases.
Techniques such as inserting grooves, ribs, or both on a printed circuit board are used to help increase these specifications.
(2) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(3) Apparent charge is electrical discharge caused by a partial discharge (pd).
(4) All pins on each side of the barrier tied together creating a two-terminal device

6 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

6.6 Electrical Characteristics

at TA = 25°C, VS = 5V on TMCS1126Axx, VS = 3.3V on TMCS1126Bxx and TMCS1126Cxx (unless otherwise noted)
PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
INPUT
RIN Input Conductor Resistance IN+ to IN– 0.7 mΩ
RIN Input Conductor Resistance Temperature Drift TA= –40ºC to 125ºC 2.1 μΩ/°C
TA= 25ºC 80
IIN,MAX Maximum Continuous Input Current(1) ARMS
TA= 125ºC 44
OUTPUT
TMCS1126x6x 15
TMCS1126x1x 25
TMCS1126x7x 30
TMCS1126x9x 33
TMCS1126x8x 40
S Sensitivity mV/A
TMCS1126x2x 50
TMCS1126xAx 66
TMCS1126x3x 75
TMCS1126x4x 100
TMCS1126x5x 150
Sensitivity Error: Grade A TMCS1126xxA, 0.05V ≤ VOUT ≤ VS − 0.2V ±0.1 ±0.4
eS %
Sensitivity Error: Grade B TMCS1126xxB, 0.05V ≤ VOUT ≤ VS − 0.2V ±0.3 ±1
TMCS1126xxA, 0.05V ≤ VOUT ≤ VS − 0.2V, TA =
Sensitivity Thermal Drift: Grade A ±20 ±50
−40°C to 125°C
Sdrift,therm ppm/°C
TMCS1126xxB, 0.05V ≤ VOUT ≤ VS − 0.2V, TA =
Sensitivity Thermal Drift: Grade B ±40 ±100
−40°C to 125°C
Sdrift, life Sensitivity Lifetime Drift(2) 0.05V ≤ VOUT ≤ VS − 0.2V ±0.2 ±0.5 %
Nonlinearity Error: Grade A TMCS1126xxA, VOUT = 0.1V to VS – 0.1V ±0.1
eNL %
Nonlinearity Error: Grade B TMCS1126xxB, VOUT = 0.1V to VS – 0.1V ±0.2
TMCS1126Axx, IIN = 0A 2.5
VOUT,0A Zero Current Output Voltage TMCS1126Bxx, IIN = 0A 1.65 V
TMCS1126Cxx, IIN = 0A 0.33
TMCS1126x6A, VOUT,0A − VREF, IIN = 0A ±0.1 ±0.8
TMCS1126x1A, VOUT,0A − VREF, IIN = 0A ±0.2 ±1
TMCS1126x7A, VOUT,0A − VREF, IIN = 0A ±0.2 ±1
TMCS1126x9A, VOUT,0A − VREF, IIN = 0A ±0.2 ±1
TMCS1126x8A, VOUT,0A − VREF, IIN = 0A ±0.3 ±1.5
Output Voltage Offset Error: Grade A
TMCS1126x2A, VOUT,0A − VREF, IIN = 0A ±0.3 ±1.5
TMCS1126xAA, VOUT,0A − VREF, IIN = 0A ±0.4 ±2
TMCS1126x3A, VOUT,0A − VREF, IIN = 0A ±0.4 ±2
TMCS1126x4A, VOUT,0A − VREF, IIN = 0A ±0.5 ±2.5
TMCS1126x5A, VOUT,0A − VREF, IIN = 0A ±0.6 ±3
VOE mV
TMCS1126x6B, VOUT,0A − VREF, IIN = 0A ±0.4 ±1.5
TMCS1126x1B, VOUT,0A − VREF, IIN = 0A ±0.7 ±2
TMCS1126x7B, VOUT,0A − VREF, IIN = 0A ±0.7 ±2
TMCS1126x9B, VOUT,0A − VREF, IIN = 0A ±0.7 ±2
TMCS1126x8B, VOUT,0A − VREF, IIN = 0A ±0.8 ±2.5
Output Voltage Offset Error: Grade B
TMCS1126x2B, VOUT,0A − VREF, IIN = 0A ±0.8 ±2.5
TMCS1126xAB, VOUT,0A − VREF, IIN = 0A ±1 ±3
TMCS1126x3B, VOUT,0A − VREF, IIN = 0A ±1 ±3
TMCS1126x4B, VOUT,0A − VREF, IIN = 0A ±1.5 ±4.5
TMCS1126x5B, VOUT,0A − VREF, IIN = 0A ±2 ±6

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 7

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

at TA = 25°C, VS = 5V on TMCS1126Axx, VS = 3.3V on TMCS1126Bxx and TMCS1126Cxx (unless otherwise noted)

PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
TMCS1126x6x, VOUT,0A − VREF, IIN = 0A, TA =
±10 ±30
−40°C to 125°C
TMCS1126x1x, VOUT,0A − VREF, IIN = 0A, TA =
±10 ±30
−40°C to 125°C
TMCS1126x7x, VOUT,0A − VREF, IIN = 0A, TA =
±15 ±40
−40°C to 125°C
TMCS1126x9x, VOUT,0A − VREF, IIN = 0A, TA =
±15 ±40
−40°C to 125°C
TMCS1126x8x, VOUT,0A − VREF, IIN = 0A, TA =
±15 ±40
VOE, drift, −40°C to 125°C
Output Voltage Offset Thermal Drift µV/°C
therm TMCS1126x2x, VOUT,0A − VREF, IIN = 0A, TA =
±15 ±40
−40°C to 125°C
TMCS1126xAx, VOUT,0A − VREF, IIN = 0A, TA =
±20 ±50
−40°C to 125°C
TMCS1126x3x, VOUT,0A − VREF, IIN = 0A, TA =
±20 ±70
−40°C to 125°C
TMCS1126x4x, VOUT,0A − VREF, IIN = 0A, TA =
±30 ±80
−40°C to 125°C
TMCS1126x5x, VOUT,0A − VREF, IIN = 0A, TA =
±40 ±100
−40°C to 125°C
IOS, drift, life Offset Lifetime Drift(2) Input Referred, (VOUT,0A − VREF) / S, IIN = 0A ±8 ±16 mA
TMCS1126xxA, Input Referred, VS = 3V to
Power Supply Rejection Ratio: Grade A ±10 ±45
5.5V, TA= –40ºC to 125ºC
PSRR mA/V
TMCS1126xxB, Input Referred, VS = 3V to
Power Supply Rejection Ratio: Grade B ±40 ±80
5.5V, TA= –40ºC to 125ºC
CMTI Common Mode Transient Immunity(3) VCM = 1000V, ΔVOUT < 200mV, 1µs 150 kV/µs
CMRR Common Mode Rejection Ratio Input Referred, DC to 60Hz 5 µA/V
Uniform External Magnetic Field, Input
CMFR Common Mode Field Rejection 10 mA/mT
Referred, DC to 1kHz
Input Noise Density Input Referred, Full Bandwidth 150 μA/√Hz
CL,MAX Maximum Capacitive Load VOUT to GND 4.7 nF
Short Circuit Output Current VOUT short to GND, short to VS 50 mA
SwingVS Swing to VS Power Supply Rail VS – 0.02 VS – 0.05 V
RL = 10kΩ to GND, TA= –40ºC to 125ºC
SwingGND Swing to GND 5 10 mV

8 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

at TA = 25°C, VS = 5V on TMCS1126Axx, VS = 3.3V on TMCS1126Bxx and TMCS1126Cxx (unless otherwise noted)

PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
BANDWIDTH & RESPONSE
BW Analog Bandwidth - 3dB Gain 550 kHz
Output rate of change between reaching 10%
SR Slew Rate(4) and 90% of final value as shown in Figure 6 V/µs
7-2 with a 100ns input step
Time between input and output reaching 90%
tr Response Time(4) of final values, as shown in Figure 7-2 with a 250 ns
100ns input step and a 1V output transition
Time between input and output reaching 10% of
tpd Propagation Delay(4) final values as shown in Figure 7-2 with a 100ns 60 ns
input step and a 1V output transition
Current Overload Recovery Time 300 ns
INTEGRATED REFERENCE
TMCS1126AxA 2.496 2.5 2.504
VREF Reference Output Voltage: Grade A TMCS1126BxA 1.647 1.65 1.653 V
TMCS1126CxA 0.329 0.33 0.331
TMCS1126AxA 20 50
Reference Output Thermal Drift: Grade A TMCS1126BxA 15 33 µV/°C
TMCS1126CxA 3 7
TMCS1126AxA ±1.3 ±2.5
Reference Output Lifetime Drift: Grade A TMCS1126BxA ±0.9 ±1.7 mV
TMCS1126CxA ±0.3 ±0.5
TMCS1126AxB 2.49 2.5 2.51
VREF Reference Output Voltage: Grade B TMCS1126BxB 1.64 1.65 1.66 V
TMCS1126CxB 0.32 0.33 0.34
TMCS1126AxA 40 100
Reference Output Thermal Drift: Grade B TMCS1126BxA 25 65 µV/°C
TMCS1126CxA 5 15
TMCS1126AxB ±3 ±5
Reference Output Lifetime Drift: Grade B TMCS1126BxB ±2 ±3.5 mV
TMCS1126CxB ±0.6 ±1
Reference Output Voltage PSRR VS = 3V to 5.5V 80 150 µV/V
Maximum Reference Output Capacitive Load 20 nF
Reference Output Voltage Load Regulation VREF load = -5mA, 0mA, 5mA 0.25 mV/mA

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 9

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

at TA = 25°C, VS = 5V on TMCS1126Axx, VS = 3.3V on TMCS1126Bxx and TMCS1126Cxx (unless otherwise noted)

PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
OVER CURRENT DETECTION
VOC Over Current Detection Threshold Voltage VOC = S x IOC / 2.5 0.3 VS V
ROC Over Current Input Impedance 120 kΩ
TMCS1126x6x 8.4
TMCS1126x1x 4.5
TMCS1126x7x 3.6
TMCS1126x9x 3.4
TMCS1126x8x 4.7
Over Current Hysteresis A
TMCS1126x2x 3.5
TMCS1126xAx 2.5
TMCS1126x3x 2.2
TMCS1126x4x 1.4
TMCS1126x5x 2.7
IOC Error TA = –40°C to 125°C ±2 ±10 %
Over Current Detection Response Time IIN step = 120% of IOC 100 250 ns
OC ,OL OC Pin Pull-down Voltage IOL = 3mA. TA = –40°C to 125°C GND 0.07 0.2 V
Output Frequency 8 kHz
Thermal Alert 80
ALERT Output Duty Cycle, Active Low Sensor Alert 50 %
Thermal & Sensor Alert 20
ALERT Pull-down Voltage IOL = 3mA. TA = –40°C to 125°C GND 0.07 0.2 V
POWER SUPPLY
VS Supply Voltage TA = –40ºC to 125ºC 3.0 5.5 V
TA = 25ºC 11 14 mA
IQ Quiescent Current
TA = –40ºC to 125ºC 14.5 mA
Power On Time Time from VS > 3V to valid output 34 ms

(1) Thermally limited by junction temperature, see Absolute Maximum Ratings. Applies when device mounted on TMCS1126xEVM. For
more details, see the Safe Operating Area section.
(2) Lifetime and environmental drift specifications based on three lot AEC-Q100 qualification stress test results. Typical values are
population mean+1σ from worst case stress test condition. Min/max are tested device population mean±6σ; devices tested in AEC-
Q100 qualification stayed within min/max limits for all stress conditions. See Lifetime and Environmental Stability section for more
details.
(3) Refer to the Common-Mode Transient Immunity section for details on common-mode transient response.
(4) Refer to the Transient Response Parameters section for details on transient response of the device.

10 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

6.7 Typical Characteristics

0.2

0.1
Sensitivity Error (%)

-0.1

-0.2

-0.3 S=15mV/A
S=25mV/A
S=150mV/A
-0.4
-50 -25 0 25 50 75 100 125 150
Temperature (°C)

Figure 6-1. Sensitivity Error vs Temperature Figure 6-2. Reference Error vs Temperature
0.25

0.20

0.15
Non-linearity (%)

Population
0.10

0.05

0.00

-0.05
-50 -25 0 25 50 75 100 125 150
Temperature (°C)
-0.40

-0.32

-0.24

-0.16

-0.08

0.08

0.16

0.24

0.32

0.40
0.0
Figure 6-3. Non-Linearity vs Temperature
Sensitivity Error (%)
All sensitivities

Figure 6-4. Sensitivity Error Production

Distribution: Grade A
6

0
Gain (dB)

-3

-6

-9

-12
10 100 1k 10k 100k 1M 10M
Frequency (Hz)
Figure 6-5. Sensitivity vs Frequency, All Gains Figure 6-6. Phase vs Frequency, All Gains
Normalized to 1Hz

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 11

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

10 100

Closed-loop Output Impedance ()

1
Input Referred PSRR (A/V)

10

100m

1
10m

10 100 1k 10k 100k 1M

Frequency (Hz) 10 100 1k 10k 100k 1M
Frequency (Hz)
Figure 6-7. PSRR vs Frequency
Figure 6-8. Output Impedance vs Frequency
50 2.5 50 2.5
IIN
VOUT
40 2 40 2

30 1.5 30 1.5

VOUT – VREF (V)

VOUT – VREF (V)
IIN (A)

20 1 IIN (A) 20 1

10 0.5 10 0.5

0 0 0 0
IIN
VOUT
-10 -0.5 -10 -0.5
Time (250ns/div) Time (250ns/div)
Figure 6-9. Voltage Output Step Response, Rising Figure 6-10. Voltage Output Step Response, Falling

Figure 6-11. Current Overload Response Figure 6-12. Startup Transient Response

12 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

VS 13

VS-1
12
Output Voltage Swing (V)

Quiescent Current (mA)

VS-2

VS-3 11

GND+3
10
GND+2

25°C
GND+1 9
-40°C
125°C VS=5V
GND VS=3.3V
0 10 20 30 40 50 60 70 80 8
Output Current (mA) -50 -25 0 25 50 75 100 125 150
Temperature (°C)
Figure 6-13. Output Swing vs Output Current
Figure 6-14. Quiescent Current vs Temperature
1000

900

800
RIN ()

700

600

500
-50 -25 0 25 50 75 100 125 150
Temperature (°C)

Figure 6-15. Input Conductor Resistance vs Temperature

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 13

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

7 Parameter Measurement Information

7.1 Accuracy Parameters
The ideal first-order transfer function of the TMCS1126 is given by Equation 1, where the output voltage is a
linear function of input current. The accuracy of the device is quantified both by the error terms in the transfer
function parameters, as well as by nonidealities that introduce additional error terms not in the simplified linear
model. See Total Error Calculation Examples for example calculations of total error, including all device error
terms.

VOUT = IIN × S + VREF (1)

where
• VOUT is the analog output voltage.
• IIN is the isolated input current.
• S is the sensitivity of the device.
• VREF is the zero current reference output voltage for the device variant.
7.1.1 Sensitivity Error
Sensitivity is the proportional change in the sensor output voltage due to a change in the input conductor current.
This sensitivity is the slope of the first-order transfer function of the sensor (see Figure 7-1). The sensitivity of the
TMCS1126 is tested and calibrated at the factory for high accuracy.
VOUT (V)

VREF + VFS+
VNL S = Slope (V/A)

best fit linear

VREF
VOUT, 0 A
VOE
VREF

VREF ± VFS±
IFS± IIN (A) IFS+

Figure 7-1. Sensitivity, Offset, and Nonlinearity Error

Sensitivity error eS is the deviation from ideal sensitivity and is defined in Equation 2 as the variation of the
best-fit measured sensitivity from the ideal sensitivity.

Sfit − Sideal
eS = Sideal (2)

where
• eS is the sensitivity error.
• Sfit is the best fit sensitivity.
• SIdeal is the ideal sensitivity.
Sensitivity thermal drift Sdrift,therm is the change in sensitivity with temperature and is reported in ppm/°C. To
calculate sensitivity error at any given temperature T use Equation 3 to multiply the sensitivity thermal drift by the
change in temperature from 25°C and add that value to the sensitivity error at 25°C.

eS, ∆T = eS, 25℃ + Sdrift, therm × ∆T (3)

14 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

where
• Sdrift,therm is the sensitivity drift over temperature in ppm/°C.
• ΔT is the change in device temperature from 25°C.
Sensitivity lifetime drift Sdrift,life is the change in sensitivity due to operational and environmental stresses over
the entire lifetime of the device, and is reported as a worst-case percentage change in sensitivity over lifetime at
25°C.
7.1.2 Offset Error and Offset Error Drift
Offset error is the deviation from the ideal output with zero input current and most often limits measurement
accuracy at low input current levels. Offset error can be referred to the output as offset voltage error or referred
to the input as offset current error. When divided by device sensitivity, S, output voltage offset error VOE is input
referred as input current offset error IOS (see Equation 4). Offset error referred to the input (RTI) allows for more
direct comparisons or offset error with input current. Regardless of whether offset error is referred to the input as
current offset error IOS, or to the output as voltage offset error VOE, offset error is a single error source and must
only be included once in either input-referred or output-referred error calculations.

V
IOS = OE
S (4)

As shown in Figure 7-1, the output voltage offset error VOE of the TMCS1126 is the difference between the zero
current output voltage VOUT,0A and the zero current output reference voltage VREF (see Equation 5).

VOE = VOUT, 0A − VREF (5)

The output offset error VOE includes magnetic offset error in the Hall sensor and offset voltage error in the signal
chain. The internal zero current output reference voltage is brought out to pin VREF so that errors in the internal
reference voltage as well as errors introduced at the system level can be removed.
Offset drift is the change in the offset as a function of temperature T. Output offset drift is reported in µV/°C. To
calculate offset error at any given temperature, multiply the offset drift by the change in temperature and add that
value to the offset error at 25°C (see Equation 6).

VOE, ∆T = VOE, 25℃ + VOE, drift × ∆T (6)

where
• VOE,drift is the output voltage offset drift with temperature in µV/°C.
• ΔT is the change in device temperature from 25°C.
7.1.3 Nonlinearity Error
Nonlinearity is the deviation of the output voltage from a linear relationship to the input current. Nonlinearity
voltage, as shown in Figure 7-1, is the maximum voltage deviation from the best-fit line based on measured
parameters (see Equation 7).

VNL = VOUT, meas − Imeas × Sfit + VOUT, 0A (7)

where
• VOUT,meas is the voltage output at maximum deviation from best fit.
• Imeas is the input current at maximum deviation from best fit.
• Sfit is the best-fit sensitivity of the device.
• VOUT,0A is the device zero current output voltage.

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 15

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

Nonlinearity error for the TMCS1126 is specified as a percentage of the full-scale output range, VFS (see
Equation 8).

V
eNL = VNL (8)
FS

7.1.4 Power Supply Rejection Ratio

Power supply rejection ratio (PSRR) is the change in device offset due to variations in supply voltage. Use
Equation 9 to calculate input referred offset errors caused by supply variations on TMCS1126Axx variants.
Use Equation 10 to calculate input referred offset errors caused by supply variations on TMCS1126Bxx and
TMCS1126Cxx variants.

ePSRR, A = PSRR × VS − 5V (9)

ePSRR, B = ePSRR, C = PSRR × VS − 3.3V (10)

where
• PSRR is the input referred power supply rejection ratio in mA/V.
• VS is the operational supply voltage.
7.1.5 Common-Mode Rejection Ratio
Common-mode rejection ratio (CMRR) quantifies the effective input current error due to varying voltage on the
isolated input of the device. Due to magnetic coupling and galvanic isolation of the current signal, the TMCS1126
has very high rejection of input common-mode voltage. Use Equation 11 to calculate the error contribution from
the input common-mode voltage VCM.

eCMRR = CMRR × VCM (11)

where
• CMRR is the input-referred common-mode rejection in µA/V.
• VCM is the operational AC or DC voltage on the input of the device.
7.1.6 External Magnetic Field Errors
The TMCS1126 suppresses interference from external magnetic fields generated by adjacent high-current
carrying conductors, nearby motors, magnets, or any other sources of stray magnetic fields. Common-mode
field rejection (CMFR) quantifies the effective input-referred error caused by stray magnetic fields. Use Equation
12 to calculate error contributions from stray external magnetic fields BEXT.

eBext = BEXT × CMFR (12)

where
• BEXT is the intensity of the external magnetic field in mT.
• CMRF is the common-mode field rejection in mA/mT.

16 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

7.2 Transient Response Parameters

Critical TMCS1126 transient step response parameters are shown in Figure 7-2. Propagation delay, tpd, is the
time period between the input current waveform reaching 10% of the final value and the output voltage, VOUT,
reaching 10% of the final value. Response time, tr, is the time period between the input current reaching 90% of
the final value and the output voltage reaching 90% of the final value, for an input current step sufficient to cause
a 1V change in the output voltage. Slew rate, SR, is defined as the rate of change between the output voltage
reaching 10% and 90% of the final value during the sufficiently fast input current step.

IIN VOUT
90 %
tr

SR
tpd
10 %

me
Figure 7-2. Transient Step Response

7.2.1 CMTI, Common-Mode Transient Immunity

CMTI is the capability of the device to tolerate a rising or falling voltage step on the input without coupling
significant disturbance on the output signal. The device is specified for the maximum common-mode transition
rate when the output signal does not experience a disturbance greater than 200mV lasting longer than 1µs, as
shown in Figure 7-3 with a 150kV/µs common-mode input step. Higher edge rates than the specified CMTI can
be supported with sufficient filtering or blanking time after common-mode transitions.
1.6 3.0

1.4 2.5
Common Mode Voltage (kV)

1.2 2.0
Output Voltage (V)
1.0 1.5

0.8 1.0

0.6 0.5

0.4 0.0

0.2 -0.5

0.0 VCM -1.0

VOUT
-0.2 -1.5
50 (ns/div)

Figure 7-3. Common-Mode Transient Response

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 17

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

7.3 Safe Operating Area

The isolated input current safe operating area (SOA) of the TMCS1126 is constrained by self-heating due to
power dissipation in the input conductor. Depending upon the use case, the SOA is constrained by multiple
conditions, including exceeding maximum junction temperature, Joule heating in the leadframe, or leadframe
fusing under extremely high currents. These mechanisms depend greatly on input current amplitude and
duration, along with ambient thermal conditions.
Current SOA strongly depends on the thermal environment and design of the system-level printed circuit board
(PCB). Multiple thermal variables control the transfer of heat from the device to the surrounding environment,
including air flow, ambient temperature, and PCB construction and design. All ratings are for a single TMCS1126
device mounted on the TMCS1126xEVM, or equivalent PCB design with no air flow under specified ambient
temperature conditions. Device use profiles must satisfy continuous current conduction SOA capabilities for the
thermal environment planned for system operation.
7.3.1 Continuous DC or Sinusoidal AC Current
The longest thermal time constants of device packaging and PCBs are in the order of seconds; therefore,
any continuous DC or sinusoidal AC periodic waveform with a frequency higher than 1Hz can be evaluated
based on the RMS continuous-current levels. The continuous-current capability has a strong dependence upon
the operating ambient temperature range expected in operation. Figure 7-4 shows the maximum continuous
current-handling capability of the device when mounted on the TMCS1126xEVM. Current capability falls off at
higher ambient temperatures because of the reduced thermal transfer from junction-to-ambient and increased
power dissipation in the leadframe. By improving the thermal design of an application, the SOA can be extended
to higher currents at elevated temperatures. Using larger and heavier copper power planes, providing air flow
over the board, or adding heat sinking structures to the area of the device can all improve thermal performance.

Figure 7-4. Maximum Continuous RMS Current vs Ambient Temperature

18 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

7.3.2 Repetitive Pulsed Current SOA

For applications where current is pulsed between a high current and no current, the allowable capabilities are
limited by short-duration heating in the leadframe. The TMCS1126 can tolerate higher current ranges under
some conditions, however, for repetitive pulsed events, the current levels must satisfy both the pulsed current
SOA and the RMS continuous current constraint. Pulse duration, duty cycle, and ambient temperature all impact
the SOA for repetitive pulsed events. Figure 7-5, Figure 7-6, Figure 7-7, and Figure 7-8 illustrate repetitive
stress levels based on test results from the TMCS1126xEVM under which parametric performance and isolation
integrity was not impacted post-stress for multiple ambient temperatures. At high duty cycles or long pulse
durations, this limit approaches the continuous current SOA for a RMS value defined by Equation 13.

IIN, RMS = IIN, P × D (13)

where
• IIN,RMS is the RMS input current level
• IIN,P is the pulse peak input current
• D is the pulse duty cycle

500 450
1% 1%
450 5% 400 5%
400 10% 10%
25% 350 25%
Allowable Current (A)

Allowable Current (A)

350
300
300
250
250
200
200
150
150
100 100

50 50

0 0
1m 10m 100m 1 10 1m 10m 100m 1 10
Current Pulse Duration (s) Current Pulse Duration (s)
TA = 25°C TA = 85°C

Figure 7-5. Maximum Repetitive Figure 7-6. Maximum Repetitive

Pulsed Current vs. Pulse Duration Pulsed Current vs. Pulse Duration
450 450
1% 1%
400 5% 400 5%
10% 10%
350 25% 350 25%
Allowable Current (A)

Allowable Current (A)

300 300

250 250

200 200

150 150

100 100

50 50

0 0
1m 10m 100m 1 10 1m 10m 100m 1 10
Current Pulse Duration (s) Current Pulse Duration (s)
TA = 105°C TA = 125°C

Figure 7-7. Maximum Repetitive Figure 7-8. Maximum Repetitive

Pulsed Current vs. Pulse Duration Pulsed Current vs. Pulse Duration

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 19

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

7.3.3 Single Event Current Capability

Single higher-current events that are shorter duration can be tolerated by the TMCS1126, because the junction
temperature does not reach thermal equilibrium within the pulse duration. Figure 7-9 shows the short-circuit
duration curve for the device for single current-pulse events, where the leadframe resistance changes after
stress. This level is reached before a leadframe fusing event, but must be considered an upper limit for short
duration SOA. For long-duration pulses, the current capability approaches the continuous RMS limit at the given
ambient temperature.
1k
TA = 25°C
TA = 125°C
Fuse Current (A)

100
10m 100m 1 10
Pulse Duration (s)

Figure 7-9. Single-Pulse Leadframe Capability

8 Detailed Description
8.1 Overview
The TMCS1126 is a precision Hall-effect current sensor, providing high levels of reliable reinforced isolation
working voltage, ambient field rejection and high current carrying capability. A maximum total lifetime error of
less than 1.4% can be achieved with no system level calibration, or less than 1% maximum total error can be
achieved with a one-time room temperature calibration (including both temperature and lifetime drift). Numerous
device options are provided for both unidirectional and bidirectional current measurements. The input current
flows through a conductor between the isolated input current pins. The conductor has a 0.7mΩ resistance at
room temperature and accommodates up to 44ARMS of continuous current at 125°C ambient temperature when
used with printed circuit boards of comparable thermal design, such as the TMCS1126xEVM. The low-ohmic
leadframe path reduces power dissipation compared to alternative current measurement methodologies, and
does not require any external passive components, isolated supplies, or control signals on the high-voltage side.
The magnetic field generated by the input current is sensed by a Hall sensor and amplified by a precision signal
chain. The device can be used for both AC and DC current measurements and has a bandwidth of 500kHz.
There are multiple fixed-sensitivity device options to choose from, providing a wide variety of bidirectional linear
current sensing ranges from ±10A to ±103A, as well as unidirectional linear current sensing ranges from 19A
to 183A. The TMCS1126 can operate with a low voltage supply ranging from 3V to 5.5V, and is optimized for
high accuracy and temperature stability, with both offset and sensitivity compensated across the entire operating
temperature range.

20 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

8.2 Functional Block Diagram

VS

Threshold VOC
Temperature Generation
Differential
Compensation
Hall
----------------------
Element Thr+
Offset
Bias Window
Cancellation In OC

Reinforced Isolation Barrier

Thr -

IN +
Precision
AFE Output
Amplifier VOUT
IN -

Precision
Buffer VREF
Reference

GND

Figure 8-1. Function Block Diagram

8.3 Feature Description

8.3.1 Current Input
Input current to the TMCS1126 passes through the isolated high-voltage side of the package leadframe into
and out of the IN+ and IN– pins. The current flowing through the package generates a magnetic field that is
proportional to the input current, which is measured by an integrated on-chip galvanically-isolated, precision Hall
sensor. As a result of the electrostatic shielding on the Hall sensor die, only the magnetic field generated by the
input current is measured, thus limiting input voltage switching pass-through to the circuitry. This configuration
allows for direct measurement of currents with high-voltage transients without signal distortion on the current-
sensor output. The leadframe conductor has a low resistance and a positive temperature coefficient as defined
in Electrical Characteristics.
8.3.2 Ambient Field Rejection
The TMCS1126 is designed to provide high levels of current measurement accuracy in harsh environments.
Immunity to interference from stray magnetic fields allows for use in close proximity to high current carrying
traces, motor windings, inductors, or any other erroneous source of stray magnetic fields. The TMCS1126
incorporates differential Hall sensors that are strategically located and configured to reject interference from
stray external magnetic fields. Ambient Field Rejection (AFR) limited only by Hall element matching and package
leadframe coupling reduces errors from stray magnetic fields.
8.3.3 High-Precision Signal Chain
The TMCS1126 uses a precision, low-drift signal chain with proprietary sensor linearization techniques to
provide a highly accurate and stable current measurement across the full temperature range and lifetime of
the device. The device is fully tested and calibrated at the factory to account for any variations in either silicon
processing, assembly, or packaging of the device. The full signal chain provides a fixed sensitivity voltage output
that is proportional to the current flowing through the leadframe of the isolated input.
8.3.3.1 Temperature Stability
The TMCS1126 includes a proprietary temperature compensation technique which results in significantly
improved parametric drift across the full temperature range. This compensation technique accounts for changes
in ambient temperature, self-heating, and package stress. A zero-drift signal chain architecture along with
Hall sensor temperature compensation methods enable stable sensitivity while minimizing offset errors across
temperature. System-level performance is drastically improved across required operating conditions.

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 21

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

8.3.3.2 Lifetime and Environmental Stability

In addition to large thermal drift, typical magnetic current sensors suffer an additional 2% to 3% drift in sensitivity
due to aging over the lifetime of the device. The same proprietary compensation techniques used in the
TMCS1126 to reduce temperature drift are also used to greatly reduce lifetime drift due to aging from stress and
environmental conditions especially at high operating temperatures. As shown in the Electrical Characteristics,
the TMCS1126 has industry leading lifetime sensitivity drift realized after Highly Accelerated Stress Tests (HAST)
at 130°C and 85% relative humidity (RH) during standard three lot AEC-Q100 qualifications. Low sensitivity
and offset drift within the bounds specified in the Electrical Characteristics are also observed after 1000 hour,
125°C high temperature operating life stress tests are performed as prescribed by AEC-Q100 qualifications.
These tests mimic typical device lifetime operation, and show device performance variation due to aging is vastly
improved compared with typical magnetic current sensors. Figure 8-2 and Figure 8-3 show the sensitivity and
offset drift after a 1000 hour, 125°C high temperature operating life stress test as specified by AEC-Q100. Device
operational performance varies over the lifetime of the device. This test mimics typical device lifetime operations
and shows the likelihood of the device vastly improving performance compared to typical magnetic sensors.

Population

-16

-12

-8

-4

12

16
Input-referred Offset Drift (mA)
Figure 8-3. Input-Referred Offset Drift After AEC-
Figure 8-2. Sensitivity Error Drift After AEC-Q100 Q100 High Temperature Operating Life Stress Test
High Temperature Operating Life Stress Test

8.3.4 Internal Reference Voltage

The TMCS1126 has a precision internal reference that determines the zero current output voltage, VOUT,0A.
Overall current sensing dynamic range can be optimized by choosing either of the three different zero current
output voltage options listed in the Device Comparison table. These extremely low-drift precision zero current
reference options are listed in Equation 14, Equation 15, and Equation 16. These equations are for precise
bidirectional or unidirectional current measurements using various supply voltages ranging between 3.0V to
5.5V.

TMCS1126Axx ➔ VOUT,0A = VREF = 2.5V (14)

TMCS1126Bxx ➔ VOUT,0A = VREF = 1.65V (15)

TMCS1126Cxx ➔ VOUT,0A = VREF = 0.33V (16)

8.3.5 Current-Sensing Measurable Ranges
The zero current reference voltage, VREF, along with device sensitivity, S, and supply voltage, VS, determine
the TMCS1126 linear input current measurement ranges listed in the Device Comparison table. The maximum
linear output voltage, VOUT,max, is limited to 100mV less than the supply voltage as shown in Equation 17. The
minimum linear output voltage, VOUT,min, is limited to 100mV above ground as shown in Equation 18.

VOUT, max = VS − 100mV (17)

22 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

VOUT, min = 100mV (18)

Overall maximum dynamic range can be optimized with proper device selection by referring minimum and
maximum linear output voltage swing to minimum and maximum linear input current range by dividing output
voltage by sensitivity, S (see Equation 19 and Equation 20).

VOUT, max − VOUT, 0A

IIN, max + = S (19)

VOUT, 0A − VOUT, min

IIN, max − = S (20)

where
• IIN,max+ is the maximum linear measurable positive input current.
• IIN,max– is the maximum linear measurable negative input current.
• S is the sensitivity of the device variant.
• VOUT,0A is the appropriate zero current output voltage.
As examples for determining linear input current measurement range, consider TMCS1126A2A, TMCS1126B2A
and TMCS1126C2A devices, all with 50mV/A sensitivity as shown in the Device Comparison table. When used
with a 5V supply, the TMCS1126A2A has a balanced ±48A bidirectional linear current measurement range
about the 2.5V zero current output reference voltage, VREF, as shown in Figure 8-4. When used with a 3.3V
supply, the TMCS1126B2A has a balanced ±31A bidirectional linear current measurement range about the
1.65V zero current output reference voltage. If used with a 5V supply, the linear current measurement range
of the TMCS1126B2A can be extended from –31A to 65A as shown in Figure 8-4. The TMCS1126C2A with a
0.33V zero current reference voltage is intended for measuring unidirectional currents. When used with a 3.3V
supply the TMCS1126C2A has a unidirectional linear current measurement range from –5A to 57A which can be
extended from –5A to 91.4A when used with a 5V supply.

VS = 5V

VS = 3.3V

VREF = 2.5V

VREF = 1.65V

VREF = 0.33V

Figure 8-4. Output Voltage Relationship to Input Current for TMCS1126x2A

8.3.6 Overcurrent Detection

In addition to a fast precision analog signal response, the TMCS1126 also offers a fast digital overcurrent
response. The Overcurrent Detection (OCD) circuit provides a comparator output that can be used to trigger a
warning or system shutdown to prevent damage from excessive current flow caused by short circuits, motor
stalls, or other system conditions. This fast digital response can be configured on both bidirectional and
unidirectional devices to trip anywhere between half and over twice the analog measurement range. When

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 23

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

set up to trigger outside the analog measurement range, this fast digital overcurrent output OC along with the
precision analog output VOUT allows the user to optimize control-loop dynamic range.
The desired overcurrent threshold IOC is set by applying an external voltage VOC to the VOC pin according to
Equation 21.

S × IOC
VOC = 2.5 (21)

where
• S is the device sensitivity in mV/A.
• IOC is the desired overcurrent threshold.
• VOC is the voltage applied that sets the overcurrent threshold.
A digital-to-analog converter (DAC) can be used to set the desired overcurrent threshold IOC, or a simple
external resistor divider circuit can be used as shown in Figure 8-5. When using a resistor divider, R2 must be
less than 10kΩ to mitigate the impact of the VOC input impedance on overcurrent threshold accuracy.
R1 R2
10k

GND
VS
VS

Threshold
Temperature Generation VOC
Differential RPU
Compensation
Hall
----------------------
Element Thr+
Offset OC
Bias Window
Cancellation In
Reinforced Isolation Barrier

Thr -

IN +
Precision
AFE Output
Amplifier VOUT
IN -

Precision VREF
Buffer
Reference

GND

Figure 8-5. User Configurable Overcurrent Threshold Using Power Supply Voltage

Higher overcurrent threshold accuracy can be achieved on the bidirectional TMCS1126Axx and TMCS1126Bxx
devices by using the zero current output reference voltage VREF as shown in Figure 8-6.

24 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

VS
VS

Threshold
Temperature Generation VOC
Differential RPU
Compensation
Hall
----------------------
Element Thr+
Offset OC
Bias Window
Cancellation In

Reinforced Isolation Barrier

Thr -

IN +
Precision
AFE Output
Amplifier VOUT
IN -
R1
Precision VREF
Buffer
Reference

R2
10k

GND
GND

Figure 8-6. User Configurable Overcurrent Threshold Using Zero Current Output Reference Voltage

For example, to set the desired overcurrent threshold to IOC = ±50A on the bidirectional TMCS1126A3A or
TMCS1126B3A devices, or to IOC = 50A on the unidirectional TMCS1126C3A device, size the resistors R1 and
R2 to apply a voltage VOC = 1.5V to the VOC pin according to Equation 21.
with
• TMCS1126A3A, TMCS1126B3A and TMCS1126C3A device sensitivity, S = 75mV/A.
• Desired overcurrent threshold, IOC = 50A.
• Applied overcurrent threshold voltage VOC = 1.5V.
Figure 8-7 shows the overcurrent digital output OC response as active-low. When the input current exceeds ±IOC
on a bidirectional device, the fast OC pin is pulled low. The input current must return to within ±IOC by more than
a hysteresis current IHys before the OC pin resets back to the normal high-state.

IIN
Hysteresis

+ IOC

- IOC

OC

Figure 8-7. Overcurrent Detection Diagram

8.4 Device Functional Modes

8.4.1 Power-Down Behavior
As a result of the inherent galvanic isolation of the device, very little consideration must be paid to powering
down the device, as long as the limits in the Absolute Maximum Ratings table are not exceeded on any
pins. The isolated current input and the low-voltage signal chain can be decoupled in operational behavior, as
either can be energized with the other shutdown, as long as the isolation barrier capabilities are not exceeded.

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 25

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

The low-voltage power supply can be powered down while the isolated input is still connected to an active
high-voltage signal or system.
9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.

9.1 Application Information

The key feature sets of the TMCS1126 provide significant advantages in any application where an isolated
current measurement is required.
• Galvanic isolation provides a high isolated working voltage and excellent immunity to input voltage transients.
• Hall-based measurement simplifies system level designs without the need for a power supply on the high-
voltage (HV) side.
• An input current path through the low impedance conductor minimizes power dissipation.
• Excellent accuracy and low temperature drift eliminate the need for multipoint calibrations without sacrificing
system performance.
• A wide operating supply range enables a single device to function across a wide range of voltage levels.
These advantages increase system-level performance while minimizing complexity for any application where
precision current measurements must be made on isolated currents. Specific examples and design requirements
are detailed in the following section.
9.1.1 Total Error Calculation Examples
Users can calculate the total error for any arbitrary device condition and current level. Consider error sources
like input-referred offset current (IOS), Common Mode Rejection Ratio (CMRR), Power Supply Rejection Ratio
(PSRR), sensitivity error, nonlinearity, as well as errors caused by any external magnetic fields (BEXT). Compare
each of these error sources in percentage terms, as some are significant drivers of error and some have
inconsequential impact to current measurement error. Offset (Equation 22), CMRR (Equation 23), PSRR
(Equation 24), and external magnetic field error (Equation 25) are all referred to the input, and so are divided by
the actual input current IIN to calculate percentage errors. For sensitivity error and nonlinearity error calculations,
the percentage limits explicitly specified in the Electrical Characteristics table can be used.

I V
eIos = IOS × 100% = S ×OE
I × 100% (22)
IN IN

CMRR × VCM
eCMRR = IIN × 100% (23)

PSRR × VS − 5V PSRR × VS − 3.3V

ePSRR, A = IIN × 100% ; ePSRR, B = ePSRR, C = IIN × 100% (24)

B × CMFR
eBext = EXTI × 100% (25)
IN

where
• VOE is the output-referred offset voltage error.
• VCM is the input common-mode voltage.
• ePSRR,A is the power supply rejection error for TMCS1126Axx devices.
• ePSRR,B is the power supply rejection error for TMCS1126Bxx devices.
• ePSRR,C is the power supply rejection error for TMCS1126Cxx devices.

26 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

• VS is the supply voltage.

• CMFR is the common-mode magnetic field rejection.
When calculating error contributions across temperature, only offset error and sensitivity error contributions vary
significantly. To determine the offset error across temperature, use Equation 26 to calculate total input-referred
offset error current, IOS, at any ambient temperature, TA.

V + V drift × ∆T
eIos,∆T = OE, 25℃ S ×OE,
I × 100% (26)
IN

where
• VOE,25°C is the output-referred offset error at 25°C.
• VOE,drift is the output-referred offset drift with temperature in µV/°C.
• ΔT is the change in temperature from 25°C.
• S is the sensitivity of the device variant.
Sensitivity error at 25°C is specified as eS,25°C in the Electrical Characteristics table along with sensitivity
variation over temperature as sensitivity thermal drift Sdrift,therm in ppm/°C. To determine the sensitivity error
across temperature, use Equation 27 to calculate sensitivity error at any ambient temperature, TA, over the given
application operating ambient temperature range between –40°C and 125°C.

eS,∆T = eS, 25℃ + Sdrift, therm × ∆T × 100% (27)

To accurately calculate the total expected error of the device, the contributions from each of the individual
components above must be understood in reference to operating conditions. To account for the individual error
sources that are statistically uncorrelated, use a root sum square (RSS) error calculation to calculate total error.
For the TMCS1126, only the input-referred offset current (IOS), CMRR, and PSRR are statistically correlated.
These error terms are lumped in an RSS calculation to reflect this nature, as shown in Equation 28 for room
temperature and in Equation 29 across a given temperature range. The same methodology can be applied for
calculating typical total error by using the appropriate error term specification.

2 2 2 2
eRSS = eIos+ePSRR+eCMRR + eBext + eS + eNL (28)

2 2 2 2
eRSS,∆T = eIos,∆T+ePSRR+eCMRR + eBext + eS,∆T + eNL (29)

The total error calculation has a strong dependence on the actual input current, therefore always calculate
total error across the dynamic range that is required. These curves asymptotically approach the sensitivity and
nonlinearity error at high current levels, and approach infinity at low current levels due to offset error terms
with input current in the denominator. Key figures of merit for any current-measurement system include the
total error percentage at full-scale current, as well as the dynamic range of input current over which the error
remains below some key level. Figure 9-1 shows the RSS maximum total error as a function of input current for
a TMCS1126A2A at room temperature and across the full temperature range with a 5.25V supply.

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 27

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

Figure 9-1. RSS Error vs Input Current

9.1.1.1 Room-Temperature Error Calculations

For room-temperature total error calculations, specifications across temperature and drift are ignored. As an
example, consider a TMCS1126B2A with a supply voltage (VS) of 3.1V and a worst-case common-mode
excursion of 600V to calculate operating-point-specific parameters. Consider a measurement error due to an
external 400µT magnetic field generated by a 20ADC current flowing through an adjacent trace or conductor that
is 10mm away. The full-scale current range of the device in specified conditions is slightly greater than ±31A, as
shown in the Device Comparison table. In this case, the calculating error at both 25A and 12.5A highlights error
dependencies on the input-current level. Table 9-1 shows the individual error components and RSS maximum
total error calculations at room temperature under the conditions specified. Relative to other errors, the additional
errors from CMRR, external ambient magnetic fields BEXT and nonlinearity are negligible, and can typically be
excluded from total error calculations.
Table 9-1. Total Error Calculation: Room Temperature Example
ERROR AT ERROR AT
ERROR COMPONENT SYMBOL EQUATION
IIN = 25A IIN = 12.5A
I V
eIos = IOS × 100% = S ×OE ± 1.5mV
IIN × 100% = 50mV/A × IIN × 100%
Input offset error eIos ±0.12% ±0.24%
IN
PSRR × VS − 3.3
PSRR error ePSRR ePSRR = × 100% ±0.04% ±0.07%
IIN
CMRR × VCM
CMRR error eCMRR eCMRR = × 100% ±0.01% ±0.02%
IIN
BEXT × CMFR
External Field error eBext eBext = × 100% ±0.02% ±0.03%
IIN
Sensitivity error eS Specified in Electrical Characteristics ±0.4% ±0.4%
Nonlinearity error eNL Specified in Electrical Characteristics ±0.10% ±0.10%

RSS total error eRSS 2 2 2 2 0.45% 0.53%

eRSS = eIos+ePSRR+eCMRR + eBext + eS + eNL

9.1.1.2 Full-Temperature Range Error Calculations

To calculate total error across any specific temperature range, use Equation 28 and Equation 29 for RSS
maximum total errors, similar to the example for room temperatures. Conditions from the example in Room-
Temperature Error Calculations are replaced with the respective equations and error components for a –40°C to
85°C temperature range below in Table 9-2.

28 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

Table 9-2. Total Error Calculation: –40°C to 85°C Example

ERROR AT ERROR AT
ERROR COMPONENT SYMBOL EQUATION
IIN = 25A IIN = 12.5A

VOE, 25℃ + VOE, drift × ∆T

Input offset error eIos,ΔT eIos,∆T = × 100% ±0.31% ±0.62%
S × IIN

PSRR × VS − 3.3
PSRR error ePSRR ePSRR = × 100% ±0.04% ±0.07%
IIN
CMRR × VCM
CMRR error eCMRR eCMRR = × 100% ±0.01% ±0.02%
IIN
BEXT × CMFR
External Field error eBext eBext = × 100% ±0.02% ±0.03%
IIN

Sensitivity error eS,ΔT eS,∆T = eS, 25℃ + Sdrift, therm × ∆T × 100% ±0.70% ±0.70%

Nonlinearity error eNL Specified in Electrical Characteristics ±0.10% ±0.10%

RSS total error eRSS,ΔT 2 2 2 2 0.79% 1.01%

eRSS,∆T = eIos,∆T+ePSRR+eCMRR + eBext + eS,∆T + eNL

9.2 Typical Application

In many applications, power must be converted from AC sources for use in DC circuitry. Some type of controlled
power factor correction (PFC) stage is usually needed to improve power transfer efficiency. Faster and faster
power switches are being used in modern PFC stages to reduce overall size and to improve power transfer
efficiency. Often, the PFC stage of AC to DC converters is connected directly to AC power grids. A primary
challenge to sensing in PFC stages is that the current sensor is subjected to large voltage spikes coming
from the high-voltage (HV) power grid along with large transients coming from high speed power switches
during charge transfer. Inherent isolation in the TMCS1126 construction helps overcome these challenges by
providing high levels of isolation between the HV current sensing nodes and low-voltage control circuitry, with
high common-mode transient immunity (CMTI). Figure 9-2 shows the use of the TMCS1126 measuring phase
currents in a common AC to DC converter stage.

Figure 9-2. AC to DC Converter Current Sensing

9.2.1 Design Requirements

For a 3-phase current sensing application, make sure to provide linear sensing across the expected current
range, and make sure that the device remains within working thermal constraints. A single TMCS1126 can
be used to measure current in each phase if necessary. For this example, consider a nominal supply of 5V
but a minimum of 4.9V to include for some supply variation. Maximum output swings are defined according to
TMCS1126 specifications, and a full-scale current measurement of ±20A is required.

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 29

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

Table 9-3. Example Application Design Requirements

DESIGN PARAMETER EXAMPLE VALUE
VS,nom 5V
VS,min 4.9V
IIN,FS ±20A

9.2.2 Detailed Design Procedure

The primary design parameter for using the TMCS1126 is the optimum sensitivity variant based on the required
measured current levels and the selected supply voltage. Positive and negative currents are measured in
this in-line phase current application example, therefore select a bidirectional variant. The TMCS1126 has a
precision internal reference voltage that determines the zero current output voltage, VOUT,0A.
The internal reference voltage on TMCS1126Axx variants, with zero current output voltage VOUT,0A = 2.5V is
intended for bidirectional current measurements when used with 5V power supplies. The internal reference
voltage on TMCS1126Bxx variants, with zero current output voltage VOUT,0A = 1.65V is intended for bidirectional
current measurements when used with 3.3V power supplies. Further consideration of noise and integration with
an ADC can be explored, but is beyond the scope of this application design example. The TMCS1126 output
voltage VOUT is proportional to the input current IIN as defined by Equation 30 with output offset set by VOUT,0A.

VOUT = IIN × S + VOUT, 0A (30)

Design of the sensing solution focuses on maximizing the sensitivity of the device while maintaining linear
measurement over the expected current input range. The TMCS1126 has a linear measurable current range that
is constrained by either the positive swing to supply or negative swing to ground. To account for the operating
margin, consider the previously defined minimum possible supply voltage VS,min = 4.9V. With the previous
parameters, the maximum linear output voltage VOUT,max is defined by Equation 31 and the minimum linear
output voltage VOUT,min is defined by Equation 32.

VOUT, max = VS, min − 100mV (31)

VOUT, min = 100mV (32)

Design parameters for this example application are shown in Table 9-4 along with the calculated output range.
Table 9-4. Example Application Design Parameters
DESIGN PARAMETER EXAMPLE VALUE
VOUT,max 4.8V
VOUT,0A 2.5V
VOUT,max – VOUT,0A 2.3V

These design parameters result in a maximum positive linear output voltage swing of ±2.3V about VOUT,0A =
2.5V. To determine which sensitivity variant of the TMCS1126 most fully uses this linear range, use Equation 33
to calculate the maximum current range for a bidirectional current ±IIN,max.

VOUT, max − VOUT, 0A

IIN, max = S (33)

where
• S is the sensitivity of the relevant AxA variant.
Table 9-5 shows the calculation for each gain variant of the TMCS1126 with the appropriate sensitivities.

30 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

Table 9-5. Maximum Full-Scale Current Ranges With 2.3V Positive Output Swing
VARIANT SENSITIVITY IIN,max
TMCS1126A1x 25mV/A ±92A
TMCS1126A7x 30mV/A ±76.6A
TMCS1126A8x 40mV/A ±57.5A
TMCS1126A2x 50mV/A ±46A
TMCS1126A3x 75mV/A ±30.6A
TMCS1126A4x 100mV/A ±23A
TMCS1126A5x 150mV/A ±15.3A

In general, the highest sensitivity variant is selected to provide the lowest maximum input current range that is
larger than the desired full-scale current range. For the design parameters in this example, either the higher
precision TMCS1126A4Aor the less accurate TMCS1126A4B (both with sensitivity of 100mV/A is the proper
selection because the maximum ±23A linear measurable range is larger than the desired ±20A full-scale current
range.
9.2.3 Application Curve
To illustrate high levels of isolation achievable between noisy high-voltage current sensing nodes and low-
voltage precision current measurement and control circuitry, Figure 9-3 shows the output signal from the
TMCS1126 in a noisy in-phase PWM motor control example. In this example with a large induction motor under
no load, no PWM edge interference is seen on the current sensor output with high-voltage PWM switching on
the current sensor input, as is often pronounced on many current sensors.

Figure 9-3. Inline Motor Current-Sense Input and Output Signals

9.3 Power Supply Recommendations

The TMCS1126 only requires a power supply (VS) on the low-voltage isolated side, which powers the analog
circuitry independent of the isolated current input. VS determines the full-scale output range of the analog
output VOUT, and can be supplied with any voltage between 3V and 5.5V. To filter noise in the power-supply
path, place a low-ESR decoupling capacitor of 0.1µF between VS and GND pins as close as possible to the
supply and ground pins of the device. More decoupling capacitance can be added to compensate for noisy or
high-impedance power supplies. When used in extremely noisy environments, ferrite beads can be added close
to the supply pin as shown in Figure 9-4 to target and suppress high-frequency noise coupled on to system
supply.

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 31

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

1 10
NC
9
GND
IN + 8
NC
7
VREF
2 6
VOUT
5
VOC
IN F.B.
4
VS Supply
3
OC 0.1µF

Figure 9-4. Power Supply Noise Filtering

The TMCS1126 power supply VS can be sequenced independently of current flowing through the input.
However, there is a power-on delay between VS reaching the recommended operating voltage and the analog
output validation. During this power-on time, the output voltage VOUT can transition between GND and VS as the
output transfers from a high impedance reset state to the active drive state. If this behavior must be avoided,
then provide a stable supply voltage VS for longer than the power-on time prior to applying input current.
9.4 Layout
9.4.1 Layout Guidelines
The TMCS1126 is specified for a continuous current handling capability on the TMCS1126xEVM which uses
4oz copper planes. This current capability is fundamentally limited by the maximum device junction temperature
and the thermal environment, primarily the PCB layout and design. To maximize current-handling capability and
thermal stability of the device, take care with PCB layout and construction to optimize the thermal capability.
Efforts to improve the thermal performance beyond the design and construction of the TMCS1126xEVM can
result in increased continuous-current capability due to higher heat transfer to the ambient environment. Keys to
improving thermal performance of the PCB include:
• Use large copper planes for both input current path and isolated power planes and signals.
• Use heavier copper PCB construction.
• Place thermal via farms around the isolated current input.
• Provide airflow across the surface of the PCB.
9.4.2 Layout Example
An example layout, shown in Figure 9-5, is from the TMCS1126xEVM User's Guide. Device performance is
targeted for thermal and magnetic characteristics of this layout, which provides optimal current flow from the
terminal connectors to the device input pins while large copper planes enhance thermal performance.

32 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 TMCS1126
www.ti.com SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024

Figure 9-5. Recommended Board Layout

10 Device and Documentation Support

10.1 Device Nomenclature
TI device nomenclature also includes a suffix with the device family name. This suffix indicates the package type
(for example, DVG), the temperature range, and the device speed range, in megahertz. Figure 10-1 provides a
legend for reading the complete device name for any TMCS1126 device.
For orderable part numbers of TMCS1126 devices in the SOIC package types, see the Package Option
Addendum of this document, ti.com, or contact your TI sales representative.
For additional description of the device nomenclature markings on the die, see the Silicon Errata.

TMCS1126 x x x Q DVG R
Tape and Reel Packaging
DVG SOIC Package
Temperature Range
A - Hi Grade ; B - Lo Grade
Sensi
vity
Zero Current Output Voltage
Figure 10-1. Part Number Naming Designators

10.2 Device Support

10.2.1 Development Support
For development tool support see the following:
• Texas Instruments, TMCS1126xEVM
10.3 Documentation Support
10.3.1 Related Documentation
For related documentation see the following:
• Texas Instruments, TMCS1126xEVM User's Guide
• Texas Instruments, Isolation Glossary, application note

Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 33

Product Folder Links: TMCS1126
TMCS1126
SBOSAF3A – NOVEMBER 2023 – REVISED JUNE 2024 www.ti.com

10.4 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Notifications to register and receive a weekly digest of any product information that has changed. For change
details, review the revision history included in any revised document.
10.5 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
10.6 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
10.7 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.

10.8 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.

11 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision * (November 2023) to Revision A (June 2024) Page

• Updated the number formatting for tables, figures, and cross-references throughout the document ............... 1
• Changed data sheet status from Advanced Information to Production Data......................................................1

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

34 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: TMCS1126

 PACKAGE OPTION ADDENDUM

www.ti.com 13-Jun-2024

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

PMCS1126A1BQDVGR ACTIVE SOIC DVG 10 2000 TBD Call TI Call TI -40 to 125 Samples

PMCS1126A2BQDVGR ACTIVE SOIC DVG 10 2000 TBD Call TI Call TI -40 to 125 Samples

PMCS1126B1BQDVGR ACTIVE SOIC DVG 10 2000 TBD Call TI Call TI -40 to 125 Samples

PMCS1126B2BQDVGR ACTIVE SOIC DVG 10 2000 TBD Call TI Call TI -40 to 125 Samples

TMCS1126A3AQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126A3A Samples

TMCS1126A3BQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126A3B Samples

TMCS1126A4AQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126A4A Samples

TMCS1126A5BQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126A5B Samples

TMCS1126A8AQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126A8A Samples

TMCS1126B2AQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126B2A Samples

TMCS1126B2BQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126B2B Samples

TMCS1126B5BQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126B5B Samples

TMCS1126B6AQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126B6A Samples

TMCS1126B9AQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126B9A Samples

TMCS1126B9BQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126B9B Samples

TMCS1126C1AQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126C1A Samples

TMCS1126C1BQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126C1B Samples

TMCS1126C2BQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126C2B Samples

TMCS1126C3AQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126C3A Samples

TMCS1126C4AQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126C4A Samples

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 13-Jun-2024

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

TMCS1126C5AQDVGR ACTIVE SOIC DVG 10 2000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 1126C5A Samples

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF TMCS1126 :

• Automotive : TMCS1126-Q1

Addendum-Page 2
 PACKAGE OPTION ADDENDUM

www.ti.com 13-Jun-2024

NOTE: Qualified Version Definitions:

• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects

Addendum-Page 3
 PACKAGE OUTLINE
DVG0010A SCALE 1.500
SOIC - 2.65 mm max height
SMALL OUTLINE PACKAGE

10.63 SEATING PLANE

TYP
9.97
PIN 1 ID 0.1 C
A
AREA

1 10
10.5
10.1
NOTE 3

2X 2.64
2.44 7X 1.27

(0.86)

2X 4.32
4.12

8X 0.51
0.31
2 3 0.25 C A B

7.6
B 2.65 MAX
7.4
NOTE 4

0.32 TYP
0.23

SEE DETAIL A
0.25
GAGE PLANE

0.3
0 -8 0.1
1.27
0.40 DETAIL A
(1.4) TYPICAL

4226847/C 10/2022

NOTES:

1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm, per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm, per side.
5. Reference JEDEC registration MS-013.

www.ti.com
 EXAMPLE BOARD LAYOUT
DVG0010A SOIC - 2.65 mm max height
SMALL OUTLINE PACKAGE

SYMM SYMM
10X (2) 10X (1.65) SEE
SEE DETAILS
DETAILS
1 1 10
10

8X (0.6)
8X (0.6)
SYMM SYMM
(5.08) (5.08)

2X (4.41) 2X (4.41) 7X (1.27)

2 3 7X (1.27) 2 3
R0.05 TYP R0.05 TYP
(9.3) (9.75)

IPC-7351 NOMINAL HV / ISOLATION OPTION

7.3 mm CLEARANCE/CREEPAGE 8.1 mm CLEARANCE/CREEPAGE

LAND PATTERN EXAMPLE

SCALE:4X

SOLDER MASK SOLDER MASK METAL

METAL OPENING OPENING

0.07 MAX 0.07 MIN

ALL AROUND ALL AROUND

NON SOLDER MASK SOLDER MASK

DEFINED DEFINED

SOLDER MASK DETAILS

4226847/C 10/2022

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com
 EXAMPLE STENCIL DESIGN
DVG0010A SOIC - 2.65 mm max height
SMALL OUTLINE PACKAGE

SYMM SYMM
10X (2) 10X (1.65)

1 1
10 10

8X (0.6) 8X (0.6)
SYMM SYMM
(5.08) (5.08)

2X (4.41) 2X (4.41) 7X (1.27)

7X (1.27) 2 3
2 3

R0.05 TYP R0.05 TYP

(9.3) (9.75)

IPC-7351 NOMINAL HV / ISOLATION OPTION

7.3 mm CLEARANCE/CREEPAGE 8.1 mm CLEARANCE/CREEPAGE

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL
SCALE:4X

4226847/C 10/2022

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.

www.ti.com
 IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, regulatory or other requirements.
These resources are subject to change without notice. TI grants you permission to use these resources only for development of an
application that uses the TI products described in the resource. Other reproduction and display of these resources is prohibited. No license
is granted to any other TI intellectual property right or to any third party intellectual property right. TI disclaims responsibility for, and you
will fully indemnify TI and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these
resources.
TI’s products are provided subject to TI’s Terms of Sale or other applicable terms available either on ti.com or provided in conjunction with
such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable warranties or warranty disclaimers for
TI products.
TI objects to and rejects any additional or different terms you may have proposed. IMPORTANT NOTICE

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2024, Texas Instruments Incorporated