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65 views5 pages

CSE Question Format

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JCTCOLLEGE OF ENGINEERING AND TECHNOLOGY

DEPARTMENT OF SCIENCE & HUMANITIES


IMPORTANT QUESTIONS
SUB: PH-3256 - PHYSICS FOR INFORMATION SCIENCE
Student Name: Branch:

S.No QUESTIONS MARKS AWARDED STAFF


MARKS SIGN
UNIT I: ELECTRICAL PROPERTIES OF MATERIALS
PART A QUESTIONS
1 What are the merits of classical free electron theory? 2
2 Define mean free path. 2
3 State Wiedemann –Franz law. 2
4 Define Fermi distribution function. 2
5 What are difference between Drift velocity and
thermal velocity of an electron? 2
PART B QUESTIONS
1 On the basis of free electron theory derive an 16
expression for the electrical and thermal
conductivities of metal. Deduce Wiedemann-Franz
law classically and quantum mechanically.
2 Derive an expression for density of states and based 16
on that calculate the carrier concentration in metals.
3 Describe the tight binding approximation to explain 12
the formation of energy band.
4 Derive an expression for effective mass of an 16
electron and explain the concept of hole.
Derive an expression for the energy of particle in 16
5 three dimensional box.

Unit II: SEMICONDUCTOR PHYSICS


PART A QUESTIONS
1 What are the properties of semiconductors? 2
What are the differences between elemental 2
2 semiconductors and compound semiconductors?
3 Define Hall-effect and Hall voltage. 2
4 Mention the applications of Hall Effect. 2
5 Compare n-type and p-type semiconductors. 2
PART B QUESTIONS

1 Derive an expression for the carrier concentration of 16


an electron in intrinsic semiconductor
2 Derive an expression for carrier concentration in N- 16
type semiconductor. Explain the variation of Fermi
level with temperature and donar impurity
concentration.
3 Derive an expression for carrier concentration P-type 16
semiconductor. Explain the variation of Fermi level
with temperature and acceptor impurity
concentration.
4 What is Hall effect? Obtain an expression for the 16
Hall coefficient for a p-type and n-type
semiconductor. Describe an experimental setup for
the measurement of Hall voltage.
5 Discuss the ohmic contact and also describe the 16
construction and working of Schottky diode.
UNIT III: MAGNETIC PROPERTIES OF MATERIALS
PART A QUESTIONS
1 What is Bohr magneton? 2
2 Mention the energies involved in origin of domains 2
in ferromagnetic material.
3 State the properties of soft magnetic materials. 2
4 Define Retentivity and Coercivity. 2
5 What are Ferrimagnetic materials or Ferrites? 2
PART B QUESTIONS
Explain/compare the dia, para and ferro magnetic 16
1 materials on the basis of spin.
Explain the domain theory of ferromagnetism and the 16
2 types of energy involved in the process of domain
growth in detail.
Compare/discuss the soft and hard magnetic 16
3 materials.
Describe the principle, construction and working of 16
4 magnetic hard disc drive with GMR sensor.
Explain the B-H curve or hysteresis curve in 12
5 ferromagnetic materials.
UNIT IV: OPTICAL PROPERTIES OF MATERIALS
PART A QUESTIONS
1 What is meant by injection luminescence? Give 2
examples.
2 What is the principle used in PIN photodiode? 2
3 What is meant by LED? Give its principle. 2
4 Mention any four advantages of LED in electronic 2
display.
5 Define skin depth and skin layer. 2
PART B QUESTIONS
1 Explain the principle, construction and working of a 16
photo diode and solar cell. Give the advantages,
disadvantages and applications of
the above.
2 Describe the principle, construction and working of a 16
LED with suitable energy band diagram. List out the
advantages, disadvantages and applications of LED.
What is OLED? Discuss in detail, the construction 16
3 and working of OLED. Provide the advantages,
disadvantages and applications of OLED.
(i) What is meant by optical data storage? 16
4 (ii) List out the different types of optical data storage
techniques and describe any one in detail.
5 Describe the construction and working of laser 16
diodes. What are the advantages of these diodes?
UNIT:V NANO DEVICES AND QUANTUM
COMPUTING
PART A QUESTIONS

1 What is meant by quantum tunneling? 2


2 What is the difference between the band gap of a 2
material to the nano materials?
3 What is meant by quantum confined structure? 2
4 Distinguish between classical bit and quantum bit. 2
5 List out the advantages of quantum computing over 2
classical computing.
PART B QUESTIONS
1 Explain quantum confinement and quantum 16
structures in Nano material.
2 Explain the single electron phenomena and describe 16
the construction and working of single electron
transistor.
Describe the symbol, construction and truth table for 12
3 CNOT gate.
4 Write a note on band gap of nanomaterial and 16
tunneling.
Discuss the advantages of quantum computing over 12
5 classical computing.

SubjectTeacher HOD

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