5 Semiconductor Electronics

Introduction
The word "electronics' is derived from electron + dynamics which means the study of the
behaviour of an electron under different conditions of externally applied fields. Electronics is
field of science which deals with electron devices and their utilization.

1. Energy Bands in Solids

(i) In solids, the group of closely lying energy levels is known as energy band.
(ii) In solids the energy bands are analogous to energy levels in an atom.
(iii) In solids the atoms are arranged very close to each other. In these atoms there are discrete
energy levels of electrons. For the formation of crystal these atoms come close together,
then due to nucleus-nucleus, electron-electron and electron-nucleus interactions the
discrete energy levels of atom distort and consequently each energy level splits into a large
number of closely lying energy levels.
(iv) The number of split energy levels is proportional to the number of atoms interacting with
each other. If two atoms interact then each energy level splits into two out of which one
will be somewhat above and another will be somewhat below the main energy level. In
23
solids the number of atoms is very large (≈ 10 ). Hence each energy level splits into large
number of closely lying energy levels. Being very close to each other these energy levels
assume the shape of a band.
23 –23
(v) In an energy band there are 10 energy levels with energy difference of 10 eV.
(vi) The are three types of energy bands in a solid.
(a) Valence energy band
(b) Conduction energy band
(c) Forbidden energy gap.
(vii) The conduction band is also known as first permitted energy band or first band.
(viii) Difference between valence and conduction energy bands are given below:-

Valence Energy Band Conduction Energy Band

In this band there are valence electrons. In this band there are free electrons.
This band may be partially or completely This band either empty or partially filled with
filled with electrons. electrons.
In this band the electrons are not capable of Electrons are capable of gaining energy form
gaining energy form external electric field. external electric field.
The electrons in this band do not contribute Electrons in this band contribute to electric
to electric current. current.
In this band there are electrons of outermost In this band there are electrons which are
orbit of atom which contribute in band obtained on breaking the covalent bands.
formation.
This is the band of maximum energy in which This is the band of minimum energy which is
the electrons are always present. empty.
This band can never be empty. This band can be empty.

Semiconductor Electronics 1
 (ix) Forbidden Energy Band
• No electrons are found in this band
• This band is completely empty.

(x) Forbidden energy gap or Band gap (∆Eg):

The minimum energy which is necessary for shifting electrons from valence band to
conduction band is defined as band gap (∆Eg) or forbidden energy gap i.e. ∆Eg = Ec – Ev.
There are three specific energy bands for the electrons in the crystal formed by these atoms
as shown in the figure.

Ec
Conduction band
band
energy forbidden
(eV) energy gap

EV Valence band

(xi) Completely filled energy bands: The energy band, in which maximum possible number of
electrons are present according to capacity is known as completely filled band.
(xii) Partially filled energy bands: The energy band, in which number of electrons present is less
than the capacity of the band, is known as partially filled energy band.
(xiii) Electric conduction is possible only in those solids which have partially filled energy band.

Study of Solids
Various Types of Solids
On the basis of band structure of crystals, solids are divided in three categories.
(a) Insulators (b) Conductors (c) Semi-conductors

(a) Insulators
In some solids energy gap is large (∆Eg > 3 eV).
So in conduction band there are no electrons and so no electrical conduction is possible.
Here energy gap is so large that electrons cannot be easily excited from the valence band
to conduction band by any external energy (electrical, thermal or optical).
Such materials are called as "insulator".
(b) Conductors
In some solids conduction band and valence band are overlapping or almost overlapping. So
there is no band gap between them, it means ∆ Eg = 0. Such materials are called conductors.
For example gold, silver, copper etc.
(c) Semi-conductors
In some solids, a finite but small band gap exists (∆Eg < 3eV).
Due to this small band gap some electrons can be thermally excited to "conduction band".
These thermally excited electrons can move in conduction band and can conduct current.
Example silicon, germanium etc.

2 Semiconductor Electronics
2. Detail Study of Semiconductor
Properties of Semiconductor
• Negative temperature coefficient (α), with increase in temperature resistance decreases.
Rt = R0 (1 + α ∆t) here α has negative value.
• At absolute zero kelvin temperature covalent bonds are very strong and there are no free
electrons and semiconductor behaves as perfect insulator. With increase in temperature
some covalent bonds are broken and few valence electrons jump to conduction band and
hence it behaves as poor conductor.
• Crystalline structure with covalent bonding [Face centered cubic (FCC)]
• Conduction properties may change by adding small impurities
• Place in periodic table → IV group (Generally)
• Forbidden energy gap (0.1 to 3 eV)
• Charge carriers : electron and hole
• There are many semiconductors but few of them have practical application in electronics
like
32 14
Ge : 2, 8, 18, 4 Si : 2, 8, 4

CB CB
0.7 eV 1.1eV
VB VB
band band
energy rd energy
(eV) 3 band (eV) 2nd band

2nd band 1st band

∆Eg
3/2 –
• Number of electrons reaching from valence band to conduction band n = A T e 2kT

-23
where k = Boltzmann constant = 1.38 × 10 J/K, T = absolute temperature, A = constant
∆Eg = energy gap between conduction band and valence band
• In semiconductors, Ohm's law is approximately obeyed only for low electric field (less than
6 –1
10 Vm ). Above this field, the current becomes almost independent of applied field.
• Difference between Conductors, Semi-conductors and Insulators :-

S. Property Conductors Semi-conductors Insulators

No.
1. Electrical conductivity 2 8
Very high 10 – 10 mho/m Between those of Negligible 10
–19

and its value conductors and – 10

–11
mho/m
–6
insulators i.e. 10
5
mho/m to 10 mho/m
2. Resistivity and its value Negligible Less than 10
–8
– Between those of Very high more
10
–2
Ω-m conductors and than 10 Ω-m
5

-5
insulators i.e. 10 Ω-
6
m to 10 Ω-m

Semiconductor Electronics 3
3. Band structure C.B. Completely
unoccupied
V.B. C.B. C.B.
1eV 6eV
∆Eg less ∆Eg max imum
∆Eg =
0
V.B. V.B.
Completely Completely
Overlapped bands filled valence filled valence
band band
4. Energy gap and its Zero or very small More that in Very large e.g. in
value conductors but less Diamond
than that in ∆Eg = 7 eV
insulators e.g. in Ge,
∆Eg = 0.72 eV is Si,
∆Eg = 1.1 eV in Ga As
∆Eg = 1.3 eV
5. Current carriers and Due to free electrons and Due to free electrons Due to free
current flow very high and holes more than electrons but
that in insulators negligible.
6. Number of current Very high very low negligible
carriers (electrons or
holes) at ordinary
temperature
7. Condition of valence The valence and CB → partially filled CB → Completely
band and conduction conduction bands are VB → partially empty empty
band at room completely filled or VB → Completely
temperature conduction band is some filled
what empty (e.g. in Na)
8. Behaviour at 0 K Behaves like a Behaves like an Behaves like an
superconductor insulator insulator
9. Temperature coefficient Positive Negative Negative
of resistance (α)
10. Effects of increasing Conductivity decreases Conductivity Conductivity
temperature on increases increases
conductivity
11. On increasing Decreases Increases Increases
temperature, the
number of current
carriers
12. On mixing impurities Increases Decreases Remains
their resistance unchanged
13. Current flow in these Easily Very slow Does not take
takes place place
14. Examples Cu, Ag, Au, Na, Pt, Hg, etc. Ge, Si, Ga-As etc. Wood, plastic,
mica, diamond,
glass etc.

4 Semiconductor Electronics
 Holes or Cotters
• There are uncharged.
• The deficiency of electrons in covalent bond formation in the valence band is defined as
hole or cotter.
• These are equivalent to positive charge. The value of positive charge on them is equal to
the charge of an electron.
• Their effective mass is greater than that of electrons.
• In an external electric field, holes move in a direction opposite to that of electrons i.e. they
move from positive to negative terminal.
• They contribute to current flow.
• The drift velocities of electrons (vdn) and holes (vdp) are different (vdn > vdp).

• The velocity gained by the charge carriers in an electric field of unit intensity, is defined as
their mobility
Mobility of holes (µp) < Mobility of electrons (µn).

• Holes are produced when covalent bonds in valence band break.

C.B. C.B.
• •

• • • •–   • •
e– e– e– e
V.B. V.B.

3. Type of Semiconductor and Difference Between Them

• The semiconductors are of two types.
(i) Intrinsic or pure semiconductors
(ii) Extrinsic or doped semiconductors

(i) Intrinsic or Pure Semiconductors

The semiconductor without mixing impurity in it is intrinsic or pure semiconductors
(a) Number of holes (np) = number of electrons (nn)

(b) Electric conduction takes place via both electrons and holes.
(c) I = Ip + In = ne A (vdn + vdp), here A is area of cross-section

(d) J = ne (vdn + vdp)

1
(e) Conductivity σi = = eni (µn + µp), here µn is µp are mobility of electrons and holes
ρi

respectively

Semiconductor Electronics 5
 • Doping: The process of mixing impurities of other elements in pure semiconductors is known
as doping.
• Doping is a method of addition of "desirable" impurity atoms to pure semiconductor to
increase conductivity of semiconductor.
• The concentration of dopant atoms be very low, doping ratio vary from
6 10
impure : pure ⇒ 1 : 10 to 1 : 10
8
In general it is 1 : 10
• There are two main method of doping.
(i) Alloy method
(ii) Diffusion method (The best)
• The size of dopant atom (impurity) should be almost the same as that of crystal atom. So
that crystalline structure of solid remain unchanged.

(ii) Extrinsic or Doped Semiconductors

The semiconductors, in which trivalent and pentavalent elements are mixed as impurities, are
known as extrinsic semiconductors.

• Difference between intrinsic and extrinsic semiconductors

S. No. Intrinsic Semiconductors Extrinsic Semiconductor
1. Pure Ge or Si is known as intrinsic The semiconductor resulting from mixing
semiconductor impurity in it, is known as extrinsic
semiconductors
2. Their conductivity is low (because only one Their conductivity is high
9
electrons in 10 contribute)
3. The number of free electron nn in In these nn ≠ np

conduction band is equal to the number of

holes np in valence band

4. These are not practically used These are practically used

5. In these the energy gap is very small In these the energy gap is less than as in
pure semiconductors.

The extrinsic semiconductors are of two types

(a) N-type semiconductors
(b) P-type semiconductors.

6 Semiconductor Electronics
 (a) N-type Semiconductors

• In these the impurity of some pentavalent element like P, As, Sb, Bi, etc. is mixed.
Si

Penta valent
e– e– impurity atom
e– e–

Si Bi Si

e– e–
–
e

Free electron

Si

• In these, the impurity atom donates one electron, hence these are known as donor type

semiconductors

• In these, the electrons are majority current carriers and holes are minority current carriers.

(i.e. the electron density is more than hole density nn >> np)

• Jn  nne vdn

1
• Conductivity σn = = enn (µn)
ρn

• In these, there is majority of negative particles (electrons) and hence are known as N-type

semiconductors
Electrons

C.B.

V.B.

• In these the donor energy level is close to the conduction band and far away from valence

band.

C.B.
EC
E
n
e Ed
r
g
y
EV
V.B.

Semiconductor Electronics 7
 (b) P-type Semiconductors
• In these, the impurity of some trivalent element like B, Al, In, Ga etc. is mixed.
Si

Trivalent
Impurity atc

Si B Si

Hole
present

Si

• In these, the impurity atom can accept one electron, hence these are known as acceptor
type semiconductors.
• In these, the holes are majority current carriers and electrons are minority current carriers
i.e. np >> nn
• In these there is majority of positive particles (cotters) and hence are known as P-type
semiconductors (np >> nn).
Electrons

C.B.

V.B.

• In these the acceptor energy level is close to the valence band and far away from conduction
band.
C.B.
EC
E
n
e
r
g Ea
y
EV
V.B.

• Jp  npe vdp
1
• Conductivity σp = = enp (µp)
ρp
Mass Action Law
–
In semiconductors due to thermal effect, generation of free e and hole takes place.
Apart from the process of generation, a process of recombination also occurs simultaneously,
–
in which free e further recombine with hole.
At equilibrium rate of generation of charge carriers is equal to rate of recombination of charge
carrier.

8 Semiconductor Electronics
 –
The recombination occurs due to e colliding with a hole, larger the value of nn or np, higher is
the probability of their recombination.
Hence for a given semiconductor rate of recombination ∝ nn × np
so rate of recombination = R nn × np
where R = recombination coefficient,
The value of R remains constant for a solid, according to the law of thermodynamics until
crystalline lattice structure remains same.
For intrinsic semiconductor nn = np = ni
2
so rate of recombination = R ni
2 2
R nn × np = R ni ⇒ ni = nn × np
Under thermal equilibrium, the product of the concentration 'nn' of free electrons and the
concentration np of holes is a constant.
Independent of the amount of doping by acceptor and donor impurities.
2
nn × np = ni

Characteristics Ge Si
Energy gap 0.7 (eV) 1.1(eV)
Potential barrier 0.3 V 0.7 V

Example 1:
A silicon specimen is made into a p-type semiconductor by doping on an average one indium
7
atom per 5 × 10 silicon atoms. If the number density of atoms in the silicon specimen is
28 3
5 × 10 atoms/m ; find the number of acceptor atoms in silicon per cubic centimeter.
Solution:
The doping of one indium atom in silicon semiconductor will produce one acceptor atom in
7
p-type semiconductor. Since one indium atom has been dopped per 5 × 10 silicon atoms, so
number density of acceptor atoms in silicon
5 × 1028 21 3 15 3
= = 10 atom/m = 10 atoms/cm
5 × 10 7

Example 2:
16 –3
Pure Si at 300 K has equal electron (nn) and hole (np) concentrations of 1.5 × 10 m . Doping by
22 –3
indium increases np to 3 × 10 m . Calculate nn in the doped Si.
Solution:
2
For a doped semi-conductor in thermal equilibrium nnnp = ni (Law of mass action)

ni2 (1.5 × 1016 )2 9 –3

nn = = = 7.5 × 10 m
np 3 × 1022

Semiconductor Electronics 9
Example 3:
3
What will be conductance of pure silicon crystal at 300K temp.. If electron hole pairs per cm
10 2 2
is 1.072 x 10 at this temp, µn = 1350 cm / volt sec & µP = 480 cm / volt sec
Solution:
–6
σ = nieµn + nieµp = nie (µn + µp) = 3.14×10 mho/cm

Example 4:
8 3
A semiconductor has equal electron and hole concentration of 6 × 10 /m . On doping with
12 3
certain impurity electron concentration increases to 9 × 10 /m .
(i) Identify the new semiconductor obtained after doping.
(ii) Calculate the new hole concentration.
Solution:
8 3 12 3
ni = 6 × 10 /m and nn = 9 × 10 /m
(i) nn >> ni so it is N-type semiconductor
2
(ii)  ni = nnnp
ni2 36 × 1016 4 3
np = = = 4 × 10 /m
nn 9 × 1012

Example 5:
A P type semiconductor has acceptor level 57 meV above the valence band. What is maximum
wavelength of light required to create a hole?
Solution:
hc
E=
λ
hc 6.62 × 10–34 × 3 × 108
λ= = = 217100 Å
E 57 × 10–3 × 1.6 × 10–19

Concept Builder-1

Q.1 C, Si and Ge have same lattice structure. Why is C insulator while Si and Ge intrinsic
semiconductors?

Q.2 Suppose a pure Si crystal has 5 × 1028 atoms m–3. It is doped by 1 ppm concentration of
pentavalent As. Calculate the number of electrons and holes. Given that ni = 1.5 × 1016 m–3.

Q.3 In an n-type silicon, which of the following statement is true:

(a) Electrons are majority carriers and trivalent atoms are the dopants.
(b) Electrons are minority carriers and pentavalent atoms are the dopants.
(c) Holes are minority carriers and pentavalent atoms are the dopants.
(d) Holes are majority carriers and trivalent atoms are the dopants.

Q.4 Which of the statements given in Q.3 is true for p-type semiconductors.

10 Semiconductor Electronics
Q.5 Carbon, silicon and germanium have four valence electrons each. These are characterised by
valence and conduction bands separated by energy band gap respectively equal to (Eg)C, (Eg)Si
and (Eg)Ge. Which of the following statements is true?
(a) (Eg)Si < (Eg)Ge < (Eg)C (b) (Eg)C < (Eg)Ge > (Eg)Si
(c) (Eg)C > (Eg)Si > (Eg)Ge (d) (Eg)C = (Eg)Si = (Eg)Ge

4. P - N Junction
The device formed by joining atomically a wafer of P-type semiconductor to the wafer of
N-type semiconductor is known as P-N junction.
Description of P-N Junction Without Applied Voltage
Given diagram shows a P–N junction immediately after it is formed.
P region has mobile majority holes and immobile negatively charged impurity ions.
N region has mobile majority free electrons and immobile positively charged impurity ions.

–
Due to concentration difference diffusion of holes starts from P to N side and diffusion of e s
starts N to P side.
Due to this a layer of only positive ions (in N side) and negative ions (in P–side) started to form
which generate an electric field (N to P side) which oppose diffusion process. During diffusion
magnitude of electric field increases due to which diffusion gradually decreases and ultimately
stop.
Due to electric field minority charge carriers (electrons in p-type & holes in n-type) starts
drifting & constitute a drift current opposite to direction of diffusion current.
The layer of immobile positive and negative ions, which have no free electrons and holes called
as depletion layer as shown in diagram.
-6
• Width of Depletion Layer  10 m
(a) As doping increases depletion layer decreases
(b) As temperature is increased width of depletion layer also increases.
(c) P-N junction → Non-ohmic, due to nonlinear relation between I and V.
• Potential Barrier or Contact Potential
for Ge → 0.3 V, for Si → 0.7 V
5
• Electric field, produce due to potential barrier ⇒ E  10 V/m
This field prevents the respective majority carrier from crossing barrier region

Semiconductor Electronics 11
4.1 Diffusion and Drift Current
(1) Diffusion current : P to N side
(2) Drift current : N to P side
If there is no biasing then diffusion current = drift current
So total current is zero
– +
p n
    • • •
– – – – – – – + + + + + + • + •
    • •
– – – – – – – + + + + • + + • + •
    • • • • •
– – – – – – – + + + + + + +
    • • • • •
– – – – – – – + + + + + + +

holes free electron

depletion layer
charge
density

+
dis tance

electric
potential

V0

dis tance

4.2 Behaviour of P–N Junction with an External Voltage Applied or Bias

• Forward Bias
If we apply a voltage "V" such that P–side is positive and N–side is V
VB
negative as shown in diagram.
The applied voltage is opposite to the junction barrier potential.
P N
Due to this effective potential barrier decreases, junction width also
decreases, so more majority carriers will be allowed to flow across
junction. It means the current flow is principally due to majority
charge carries which is large (mA) and biasing is called as forward Bias.

• Reverse Bias
If we apply a voltage "V" such that P–side is negative and N–side is V
positive as shown in diagram. VB
The applied voltage is same side of to the junction barrier potential.
P N
Due to this effective potential barrier increases & junction width also
increases, so no majority carriers will be allowed to flow across
junction.
Only minority carriers will be drifted. It means the current flow is
principally due to minority charge carries which is very small (µA) and
biasing is called as reversed Bias.

12 Semiconductor Electronics
 Points to Remember
• Zener Breakdown: In reverse bias, if doping is large and the reverse bias is increased further
beyond a certain limit, above particular high voltage, breakdown of depletion layer starts by
itself.
Breakdown due to covalent breaking of depletion layer, termed as Zener breakdown (After
the discovery, C. Zener) and such a diode is Zener diode.
Zener diodes with different breakdown voltages (for regulations of different voltages) can
obtained by changing the doping concentration of its p–and n–sides. For high doping
breakdown is low and vice' versa. In this type of P-n junction depletion layer is thin and
diode does not damage permanently.
• Avalanche Breakdown: If the doping concentrations of p–and n–sides are not as high as for
the case of zener diode. Such diodes will have relatively wider junction widths. At very high
reverse bias, already existing electrons and holes are accelerated in the junction field and
may undergo many collisions (like nuclear chain reaction) with the atoms in the crystal.
These new electron-hole pairs created by impact ionisation also get accelerated in the
junction field and collide further with the crystal atoms giving an increasing number of new
electrons and holes. This phenomenon is known as Avalanche breakdown and the device is
referred to as Avalanche diode. In this type of breakdown p-n junctions get damage
permanently due to heating effect due to abruptly increment of minorities during repetitive
collisions.
• In junction diode the current flow is unidirectional as in vacuum diode.
• Current flows in the semiconductor diode when it is forward biased.
• Its P-part behaves like an anode and N-apart behaves like a cathode.

Important Terms
(a) Static Forward Resistance (Rf)
The ratio of the forward voltage (Vf) and forward current (Ιf) at any point on the static
forward characteristic is defined as static forward resistance of junction diode.
Vf
i.e. Rf =
Ιf
(b) Static Reverse Resistance (Rr)
The ratio of reverse voltage (Vr) and reverse current (Ιr) at any point on static reverse
characteristic is defined as the static reverse resistance of junction diode.
Vr
i.e. Rr =
Ιr
(c) Dynamic Forward Resistance (Vr)
The ratio of small change in forward voltage to the corresponding small change in forward
current on static forward characteristic is defined as the dynamic forward resistance of
junction diode (rf)
∆Vf Vf – Vf
rf = = 2 1

∆Ι f Ιf – Ιf
2 1

Semiconductor Electronics 13
 (d) Dynamic Reverse Resistance (rr)

The ratio of the small change in reverse voltage to the corresponding small change in reverse

current on the static reverse characteristics is defined as the dynamic reverse resistance of

junction diode.

∆Vr Vr – Vr
rr = = 2 1

∆Ιr Ιr – Ιr
2 1

Forward Bias Reverse Bias

P → positive P → negative
N → negative N → positive

P N P N
 •  •
 •  •

V V
+ – – +

Potential Barrier reduces Potential Barrier increases

Width of depletion layer decrease Width of depletion layer increases

P-N Junction provide very small resistance P-N Junction provide high resistance

Forward current flow in circuit Very small reverse current

Order of forward current in milli amp. Order of current in micro amp. (Ge) or nano

amp. (Si)

Current flows mainly due to majority charge Current flows mainly due to minority charge

carriers carriers

Forward characteristic curves Reverse characteristic curves

VR (volt)
Ι0
Ip
(mA) knee
voltage break down ΙR
voltage (A)
0
0.7 1.4 2.1
V(volt)

Forward resistance Reverse resistance

∆Vf ∆VB 6
Rf =  100Ω RB = 10 Ω
∆l f ∆lB

Knee or cut in voltage Breakdown voltage

Ge → 0.3V, Si → 0.7 Ge → 25V, Si → 35V

14 Semiconductor Electronics
4.3 Characteristic Curve of P-N Junction Diode
A K A K
P N
symbol

(0 − 1) V (0 − 10) V
+ – + –
mA µA
+ – + –
D D
+
–
Rh
R +
–
Rh
R
Forward bias Re verse bias

Breakdown Forward
voltage Ι f (mA) bias
VB O A
•
C V → Volt
Ιr (µA) Knee
Re verse voltage
saturation
D current

In forward bias when voltage is increased from OV in steps and corresponding value of current
is measured, the curve comes as OB of figure. We may note that current increases very sharply
after a certain voltage known as knee voltage. At this voltage, barrier potential is completely
eliminated and diode offers a low resistance.
In reverse bias a microammeter has been used as current is very small. When reverse voltage
is increased from 0V and corresponding values of current measured the plot comes as OCD. We
may note that reverse current is almost constant hence called reverse saturation current. It
implies that diode resistance is very high. As reverse voltage reaches value VB, called breakdown
voltage, current increases very sharply.
For Ideal Diode
in forward bias in reverse bias
•• •
•
on switch off switch
R f = 0Ω Rr = ∞Ω

Example 6:
A p-n junction forms part of a rectifier circuit. A voltage waveform as shown in figure is applied
to the circuit. If the diode is ideal except for a drop of 0.7 V in the forward biased condition,
(a) Plot the current through the resistor as function of time. What is the maximum current?
(b) Calculate the average heat lost in the resistance over a single cycle.

+10V
+
VS 1KΩ
– t
0.1s
–10V

Semiconductor Electronics 15
Solution:
(a) In forward bias, the potential drop across the diode is 0.7 V, and the rest of the p.d. is
10 – 0.7
dropped across the resistance R (=1k Ω) The current (maximum) = = 9.3 mA
1000
(b) The average heat lost in the resistance over a single cycle is
2 –3 2 3 –1 –3
i R∆ t = (9.3 × 10 ) ×10 ×10 J = 8.65 ×10 J
i

9.3mA

t
0.1s

Example 7:
–7
A potential barrier of 0.5 V exists across a p-n junction (i) If the depletion region is 5 × 10 m
wide. What is the intensity of the electric field in this region? (ii) An electron with speed
5
5 × 10 m/s approaches the p-n junction from the n-side with what speed will it enter the
p-side.
Solution:
–7
(i) Width of depletion layer ∆L = 5 × 10 m V
E=
V 0.5V 6 L
E= = = 10 volt/m
∆L 5 × 10–7

P N
1 1 •
(ii) Work energy theorem Mvi2 = eV + Mv 2f
2 2
Mvl2 – 2eV 5
vf = = 2.7 × 10 m/s
M
Example 8:
Figure shows a diode connected to an external resistance and an e.m.f. Assuming that the
barrier potential developed in diode is 0.5 V. Obtain the value of current in the circuit in
milliampere.
Solution:
100Ω
E = 4.5 V, R = 100 Ω, voltage drop across
p-n junction = 0.5 V effective voltage in the
circuit V = 4.5 – 0.5 = 4.0 V 4.5V
V 4.0
current in the circuit I = = = 0.04 A = 0.04 × 1000 mA = 40 mA
R 100
Example 9:
What is the value of current I in given circuits.
Solution:
20
I= = 1A
10 + 10

Ι
10Ω
20V

10Ω 10Ω

16 Semiconductor Electronics
Example 10:
What is the value of current I in given circuits.
Solution:
2.7 – 0.7
I= = 2mA
1 × 103
0.7V
Si
0.3V

Ι Ge
1kΩ

2.7V

Example 11:
In the given circuit. If P-N junction is ideal, then calculate current flowing through it.

200Ω

1V 3V

Solution: 200Ω 200Ω

In the given condition Ι
1V 3V ≡
2V
⇒I= = 0.01A
200 2V

Example 12:
When the reverse potential in a semiconductor diode are 10V and 20V, then the corresponding
reverse currents are 25µ A and 50µ A respectively. The reverse resistance of junction diode will
be:
5 –5
(1) 40 Ω (2) 4 × 10 (3) 40 KΩ (4) 4 × 10
Solution:
Vr – Vr 20 – 10 5
rr = 2 1
= = 4 × 10 Ω
Ιr – Ιr (50 – 25) × 10–6
2 1

Example 13:
The depletion layer in a silicon diode is 1µm wide and its knee potential is 0.6V, then the electric
field in the depletion layer will be:
4 5
(1) 0.6 V/m (2) 6 × 10 V/m (3) 6 × 10 V/m (4) Zero
Solution:
dV 0.6 5
E= = = 6 × 10 V/m
dr 10–6

Semiconductor Electronics 17
Example 14:
A semiconductor P-N junction is to be forward biased with a battery of e.m.f. 1.5 Volt. If a
potential difference of 0.5V appears on the junction which does not depend on current and on
passing 10 mA current through the junction there occurs huge Joule loss, then to use the
junction at 5 mA current, the resistance required to be connected in series will be:
1.5V
+ – (·)

(1) 3 KΩ (2) 300 Ω (3) 300 KΩ (4) 200 Ω

Solution: VR = (1.5 – 0.5) = 1V = IR
1
∴R= = 200Ω
5 × 10–3

5. Some Special Diodes

• Zener Diode
A properly doped crystal diode which has sharp break down voltage is known as Zener diode.
symbol of
Zener diode• •

In reverse bias of zener diode after the breakdown voltage VZ, a large change in the current
can be produced by almost insignificant change in the reverse bias voltage. In other words
zener voltage remains constant, even though current through the zener diode varies over a
wide range. This property of the zener diode is used for regulating voltage.
Zener
voltage V Re verse
Z bias

Re verse
current

Zener Diode as a Voltage Regulator

It is always connected in reverse biased condition manner. Used as a voltage regulation. The
unregulated dc voltage (filtered output of a rectifier) is connected to the zener diode through
a series resistance RS such that the zener diode is reverse biased. On increasing the input
voltage, voltage across RS increasing,
+
RS ΙZ ΙL

+  Fluctuating regulated
– input RL output
VZ

–

without any change in the voltage across the zener diode. This is because in the breakdown
region, zener voltage remains constant even though the current through the zener diode
changes. Similarly, if the input voltage decreases, the current through RS and zener diode
also decreases.

18 Semiconductor Electronics
 The voltage drop across RS decreases without any change in the voltage across the zener
diode. Thus any increase/decrease in the input voltage results in, increase/decrease of the
voltage drop across RS without any change in voltage across the zener diode. Thus, the zener
diode acts as a voltage regulator.
In forward biased it works as a simple diode.

Example 15:
A zener diode, having breakdown voltage equal to 15V, is used in a voltage a regulator circuit
shown. The current through the zener diode is.
250Ω
+
RS

15V 1 KΩ
20V

–

Solution:
15
IL = = 15 mA Is 250Ω ΙL
1000 +
RS ΙZ
st 20 – 15 5
⇒ In loop 1 → IS = =
250 250 20V 1 15V 1 KΩ
1
IS = = 20 mA
50
–
∴ IS = IZ + IL ⇒ IZ = IS – IL = 20 – 15 = 5mA

• Photodiode
A junction diode made from “light or photo sensitive semiconductor” is called a “photo

diode” its symbol . When light of energy "hν'' falls on the photodiode (Here
hν > energy gap) more electrons move from valence band, to conduction band, due to this
current in circuit of photodiode in "Reverse bias", increases. As light intensity is increased,
the current goes on increases so photo diode is used, "to detect light intensity" for example
it is used in "Video camera".
Ι(mA)

hv
Re verse bias
Dark current V(Volt) →
Ι1
Ι2 Ι(µ A)
µA Ι3
P − side N − side Ι1 < Ι 2 < Ι 3 ↓
(Order of intensities)
(a) (b)

Figure (a) An illuminated photodiode, under reverse bias

(b) I-V characteristics of a photodiode for different illumination intensity Ι3 > Ι2 > Ι1

Semiconductor Electronics 19
 • Light Emitting Diode (L.E.D)
When a junction diode is “forward biased” energy is released at junction in the form of light
due to recombination of electrons and holes. In case of Si or Ge diodes, the energy released
is in infra-red region.
In the junction diode made of GaAs, InP etc. energy is released in visible region such a
junction diode is called "light emitting diode" (LED) Its

symbol

The I-V characteristics of an Led is

(R)(Y)(G) (B)
Ι

O V

• Solar Cell
Solar cell is a device for converting solar energy into electrical energy. A junction diode in
which one of the P or N sections is made very thin (So that the light energy falling on diode
is not greatly absorbed before reaching the junction) can be used to convert light energy

into electric energy such diode called as solar cell. Its symbol

(i) It is operated into photo voltaic mode i.e., generation of voltage due to the bombardment
of optical photon.
(ii) No external bias is applied.
(iii) Active junction area is kept large, because we are interested in more power. Materials most
commonly used for solar cell is Si, As, Cds, CdTe, CdSe, etc.

Ι
VOC (open circuit
ΙL voltage)

P n V

Depletion Ι SC
Short circuit
region current
A − typical illuminated
p - n junction solar cell l − V characteristic
(a) of a solar cell
(b)

20 Semiconductor Electronics
 Concept Builder-2

Q.1 In the below given arrangement determine the ammeter reading, if each diodes have a forward
resistance of 50 Ω and infinite backward resistance.
150Ω

150Ω

6V 100Ω
A

Q.2 Current in the circuit will be?

20Ω

30Ω

20Ω 5V

Q.3 The diode used in the circuit shown in the figure has a constant voltage drop of 0.5 V at all
currents and a maximum power rating of 100 milliwatts. What should be the value of the resistor
R connected in series with the diode for obtaining maximum current?
R 0.5V

5V

Q.4 In the circuit given the current through the zener diode is:

R1 500Ω

20V

V2 = 10V
1500Ω R2

Q.5 In an unbiased p-n junction, holes diffuse from the p-region to n-region because
(a) free electrons in the n-region attract them.
(b) they move across the junction by the potential difference.
(c) hole concentration in p-region is more as compared to n-region.
(d) All the above.

Q.6 When a forward bias is applied to a p-n junction, it

(a) raises the potential barrier.
(b) reduces the majority carrier current to zero.
(c) lowers the potential barrier.
(d) None of the above.

Semiconductor Electronics 21
Q.7 Can we take one slab of p-type semiconductor and physically join it to another n-type
semiconductor to get p-n junction?

Q.8 The V-I characteristic of a silicon diode is shown in the Figure. Calculate the resistance of the
diode at (a) ID = 15 mA and (b) VD = –10 V.

6. Rectifier
It is device which is used for converting alternating current into direct current.
(a) Half Wave Rectifier
•• •
•
+ –
  A
S1 D + A S1 D
RL RL
S2 – S2
 B  B
– +
For positive half cycle For negative half cycle

Input

Output

During the first half (positive) of the input signal. Let S1 is at positive and S2 is at negative

potential. So, the PN junction diode D is forward biased. The current flows through the load
resistance RL and output voltage is obtained.

During the second half (negative) of the input signal, S1 and S2 would be negative and positive

respectively. The PN junction diode will be reversed biased. In this case, practically no
current would flow through the load resistance. So, there will be no output voltage.
Thus, corresponding to an alternating input signal, we get a unidirectional pulsating output.

22 Semiconductor Electronics
 (b) Full Wave Rectifier

When the diode rectifies the whole of the AC wave, it is called full wave rectifier. Figure

shows the experimental arrangement for using diode as full wave rectifier. The alternating

signal is fed to the primary of transformer. The output signal appears across the load

resistance RL.

+ D1 D1
–
 
S1 S1
B A B A
• • • •
– RL + – +
RL
 S2  S2
– +
D2 D2
For positive half cycle For negative half cycle

Input

D1 D2 D1 D2 D1 D2 D1

Output

For both positive and negative

cycle output signal

• During the positive half of the input signal:

Let S1 positive and S2 negative.

In this case diode D1 is forward biased and D2 is reverse biased. So only D1 conducts and

hence the flow of current in the load resistance RL is from A to B.

• During the negative half of the input signal:

Now S1 is negative and S2 is positive. So D1 is reverse-biased and D2 is forward biased. So

only D2 conducts and hence the current flows through the load resistance RL from A to B.

It is clear that whether the input signal is positive or negative, the current always flows

through the load resistance in the same direction and full wave rectification is obtained.

(c) Bridge Rectifier

D1 D2 +
+
RL


D3 D4 –


–

Semiconductor Electronics 23
 During positive half cycle
D1 and D4 are forward biased → on switch
D2 and D3 are reverse biased → off switch

During negative half cycle

D2 and D3 are forward biased → on switch
D1 and D4 are reverse biased → off switch
Rectifier Efficiency
Pdc I2dcRL
η= =
Pac Irms
2
(RF + RL )

Full wave rectifier or

Half wave rectifier
bridge wave rectifier
0.406 0.812
η= η=
R R R R
1 + f if f << 1 1 + f If f << 1
RL RL RL RL
η = 81.2%
η = 40.6% If Rf = RL
Special Note η = 40.6%
If Rf = RL Note : In bridge full wave
η = 20.3 rectifier Rf is two times of
resistance of P - N in FB

Ripple Frequency
(i) For Half Wave Rectifier

Input frequency = 50 Hz Ripple frequency = 50 Hz

(ii) For Full Wave Rectifier

output
input
Input frequency = 50 Hz Ripple frequency = 100 Hz

Pulse
(i) For Half Wave Rectifier

output
input
number of pulse = 100 number of pulse = 50

(ii) For full wave rectifier

output
input
number of pulse = 100 number of pulse = 100

24 Semiconductor Electronics
 DC current Irms current of half wave rectifier

(IDC or Iavg for half wave rectifier)

–
1 T
T ∫0
I= Idt Irms = < I2 >

–
1  T/2 1 T2
Idt + ∫ Idt 
T

T ∫0
I =
T  ∫0
< I2 > = I dt
T/2 
T/2 T
1 T/2 1
=
T ∫0 0
I sin ωtdt + 0 =
T ∫
0
I20 sin2 ωtdt +
T/2
∫ 0.dt
T/2
I  –cos ωt  I20
∫ ( 1 – cos 2ωt ) dt + 0
T/2
= 0  =
T ω 0 2T 0

T  T  I20  T  I0
2

= –cos ω + cos 0 = =  – 0 
ωt  2  2T  2  4
— I0 I20 I0
I = Irms = =
π 4 2

Comparison Between Average Rectifiers

Full Wave
Half Wave
Centre Tap Bridge
Number of Diodes 1 2 4
Transformer necessary No Yes No
Vin Vin Vin
Peak load current, Im
rd + RL rd + RL 2rd + RL

Im Im Im
RMS current Irms
2 2 2
Im 2Im 2Im
DC current Idc
π π π
Rectification efficiency (Max) 40.60% 81.20% 81.20%

Filter Circuit
To reduce A.C. Components filter circuits are used.
• Capacitor Filter
DC
•
AC + DC •

AC C RL
output of rectifier
•
•

output

Semiconductor Electronics 25
 • L - C Filter
DC + low AC DC
•
•
AC + DC
AC C RL
output of rectifier
•
•

output

• π - Filter (Best Filter)

L
AC + DC • •

Vin C C RL
output of rectifier
• •

output

Example 16:
In half-wave rectification, what is the output frequency, if the input frequency is 50 Hz. What
is the output frequency of a full-wave rectifier for the same input frequency?
Solution:
A half-wave rectifier rectifies once during a cycle. Therefore, frequency of AC output is also the
frequency of AC input i.e. 50 Hz. A full-wave rectifier rectifies both the half cycles of the AC
output i.e., it rectifies twice during a cycle.
So, Frequency of AC output = 2 × frequency of AC input = 2 × 50 = 100 Hz.

Example 17:
In the figure, the input is across the terminals A and C and the output is across B and D. Then
the output is
B

A C

D
(1) zero (2) same as the input
(3) full-wave rectified (4) half-wave rectified
Solution:
During the half cycle when VM > VN, D1 and D3 are forward biased. Hence, B
D1 D2 P
the path of current is MABPQDCNM. In the second half cycle when VN > VM,
RL
A •• C
D2 and D4 are forward biased while D1 and D3 are reverse biased. Hence M N Q
the path of current in NCBPQDAMN. D4 D3
D
Therefore in both half cycles current flows P to Q from load resistance RL.
Or, it is a full-wave rectifier.

26 Semiconductor Electronics
Example 18:
A sinusoidal voltage of peak value 200 volt is connected to a diode and resistor R in the circuit
shown so that half wave rectification occurs. It the forward resistance of the diode is negligible
compared to R then find rms voltage (in volt) across R.

 R
E0 = 200volt

Solution:
V0 200
Vrms = = = 100 V
2 2

Concept Builder-3

Q.1 The peak voltage in the output of a half-wave diode rectifier fed with a sinusoidal signal without
filter is 10 V. Find the dc component of the output voltage.

Q.2 If a full wave rectifier circuit is operating from 100 Hz mains, then find fundamental frequency
in the ripple.

Q.3 In half-wave rectification, what is the output frequency if the input frequency is 50 Hz. What is
the output frequency of a full-wave rectifier for the same input frequency.

7. Logic Gates
7.1 Introduction
• A logic gate is a digital circuit which is based on certain logical relationship between the
input and the output voltage of the circuit.
• The logic gates are built using the semiconductor diodes and transistors.
• A logic gate is also represented by a Boolean algebraic expression. Boolean algebra is a
method of writing logical equations showing how an output depends upon the combination
of inputs. Boolean algebra was invented by George Boole.

7.2 Laws of Boolean Algebra

Basic OR, AND, and NOT operations are given below :

OR AND NOT
A+0=A A·0=0 A+ A =1
A+1=1 A·1=A A· A =0

A+A=A A·A=A A· A = A

Boolean algebra obeys commutative, associative and distributive laws as given below:

Semiconductor Electronics 27
 • Commutative Laws
A+B=B+A;
A.B = B.A

• Associative Laws
A + (B + C) = (A + B) + C
A. (B . C) = (A. B) . C

• Distributive Laws
A. (B + C) = A.B + A.C

• Some Other Useful Identities

(i) A + AB = A
(ii) A . (A + B) = A
(iii) A + ( A B) = A + B
(iv) A. ( A + B) = A.B
(v) A +(B.C) = (A + B). (A + C)
(vi) ( A + B).(A + C) = A .C + B.A +B.C

• De Morgan's Theorem
First theorem : A + B = A ·B

Second theorem : A.B = A + B

Logic Gates and Truth Table.
Logic Gate : The digital circuit that can be analysed with the help of Boolean algebra is called
logic gate or logic circuit.

Truth Table : The operation of a logic gate or circuit can be represented in a table which contains
all possible inputs and their corresponding outputs is called the truth table. To write the truth
table we use binary digits 1 and 0.

7.3 Basic Logic Gates

There are three basic logic gates. They are
(1) OR gate (2) AND gate, and (3) NOT gate

• The OR Gate : The output of an OR gate attains the state 1 if one or more inputs attain the
state 1.
A
Y= A + B
Logic symbol of OR gate
B

28 Semiconductor Electronics
 The Boolean expression of OR gate is Y = A + B, read as Y equals A OR B.
Truth table of a two-input OR gate
A B Y
0 0 0
0 1 1
1 0 1
1 1 1

• The AND Gate : The output of an AND gate attains the state 1 if and only if all the inputs are
in state 1. Logic symbol of AND gate
A
Y = A ·B
Input
Output
B
The Boolean expression of AND gate is
Y = A.B It is read as Y equals A AND B
Truth table of a two-input AND gate
A B Y
0 0 0
0 1 0
1 0 0
1 1 1

• The NOT Gate : The output of a NOT gate attains the state 1 if and only if the input does not
attain the state 1.
A Y
Logic symbol of NOT gate
The Boolean expression is Y = A , read as Y equals NOT A.
A Y
Truth table of NOT gate 0 1
1 0

7.4 Combination of Gates

The three basis gates (OR, AND and NOT) when connected in various combinations give us logic
gates such as NAND, NOR gates, which are the universal building blocks of digital circuits.
• The NAND Gate
Logic symbol of NAND gate
A
Input Y
Output
B

The Boolean expression of NAND gate is

Y = A ⋅B = A + B
A B Y
0 0 1
Truth table of a NAND gate 0 1 1
1 0 1
1 1 0

Semiconductor Electronics 29
 • The NOR Gate
Logic symbol of NOR gate
A
Y
B

The Boolean expression of NOR gate is

Y = A +B = A · B
A B Y
0 0 1
Truth table of a NOR gate 0 1 0
1 0 0
1 1 0

7.5 Universal Gates

The NAND or NOR gate is the universal building block of all digital circuits. Repeated use of
NAND gates (or NOR gates) gives other gates. Therefore, any digital system can be achieved
entirely from NAND or NOR gates. We shall show how the repeated use of NAND (and NOR)
gates will gives us different gates.

• The NOT gate from a NAND gate : When all the inputs of a NAND gate are connected
together, as shown in the figure, we obtain a NOT gate

A A

Truth table of a single

input NAND gate
A =B Y
0 1
1 0

• The AND gate from NAND gates : If a NAND gate is followed by a NOT gate (i.e., a single input
NAND gate), the resulting circuit is an AND gate as shown in figure and truth table given
show how an AND gate has been obtained from NAND gates.
A
Y
Y'
B

Truth Table
A B Y' Y
0 0 1 0
0 1 1 0
1 0 1 0
1 1 0 1

30 Semiconductor Electronics
 • The OR gate from NAND gates : If we invert the inputs A and B and then apply them to the
NAND gate, the resulting circuit is an OR gate.
A
A
Y
B
B

Truth Table
A B A B Y
0 0 1 1 0
0 1 1 0 1
1 0 0 1 1
1 1 0 0 1

• The NOT gate from NOR gates : When all the inputs of a NOR gate are connected together
as shown in the figure, we obtain a NOT gate

A Y

• The AND gate from NOR gates : If we invert the inputs A and B and then apply them to the
NOR gate, the resulting circuit is an AND gate.
A
A
Y
B
B

• The OR gate from NOR gate : If a NOR gate is followed by a single input NOR gate (NOT gate),
the resulting circuit is an OR gate.
A
Y

7.6 XOR and XNOR Gates

• The Exclusive - OR Gate (XOR Gate): The output of a two-input XOR gate attains the state
1 if one and only one input attains the state 1.
Logic symbol of XOR gate
A
Y
B
A

Semiconductor Electronics 31
 The Boolean expression of XOR gate is
Y = A.B + A.B or Y = A ⊕ B
A B Y
0 0 0
Truth table of a XOR gate 0 1 1
1 0 1
1 1 0
• Exclusive - NOR gate (XNOR gate):- The output is in state 1 when its both inputs are the
same that is, both 0 or both 1.
A
Y
Logic symbol of XNOR gate
B

The Boolean expression of XNOR gate is

=Y A ·B + A ·B or Y = or A  B
A B Y
0 0 1
Truth table of a XNOR gate 0 1 0
1 0 0
1 1 1
7.7 Summary of Logic Gates

Names Symbol Boolean expression Truth table Electrical analogue

A B Y
A
A 0 0 0
Y
B
OR B Y=A+B 0 1 1
1 0 1
1 1 1

A B Y
A 0 0 0 A B
Y
AND B Y = A. B 0 1 0
1 0 0
1 1 1

A Y
A Y
A
NOT or inverter Y=A 0 1
1 0

A B Y
A 0 0 1
Y
B
NOR (OR+NOT) B Y= A + B 0 1 0 A

1 0 0
1 1 0

32 Semiconductor Electronics
 A B Y
A 0 0 1
Y Y = A.B A
NAND (AND+NOT) B
0 1 1 B

1 0 1
1 1 0

A B Y
A
Y= A ⊕ B 0 0 0
Y
XOR (Exclusive OR) B Or 0 1 1
Y A.B + AB
= 1 0 1
1 1 0

A B Y
Y = A B
A 0 0 1
Y Or
XNOR (Exclusive NOR) B 0 1 0
Y A.B + A.B
=
1 0 0
1 1 1

Example 19:
Construct the truth table for the function X of A and B represented by figure shown here.

A• •X

B•

Solution:
The output X in terms of the input A and B can be written as, X = A.(A + B) = A
Let us make the truth table corresponding to this function.
A B A +B X=
A.(A + B)
0 0 0 0
0 1 1 0
1 0 1 1
1 1 1 1

Concept Builder-4

Q.1 You are given two circuits. identify the logic operation carried out by the two circuits.
A Y A
B (a) Y
B
(b)

Q.2 Write the truth table for the circuit given in figure consisting of NOR gates. Identify the logic
operations (OR, AND, NOT) performed by the circuits.
A

Semiconductor Electronics 33
8. Experiments
8.1 Characteristics of a p-n junction diode
It exhibits the relation between biasing voltage and current flowing through diode. The V-I
characteristics of a diode can be forward or reverse. The graph exhibiting the relation between
forward bias voltage and forward current is known as the forward characteristics, and that
exhibiting the relation between reverse bias voltage and reverse current is known as the reverse
characteristics.
The nature of forward characteristic of a diode is non-linear. The forward current increases
slowly in the beginning and shows a sudden rise at a certain value of forward voltage. This
voltage is known as the threshold voltage or cut-in voltage. This is because the resistance is
very low in forward biased condition. The current in the reverse bias is due to the flow of
minority carriers. At a certain value of reverse bias voltage there is a sudden increase in the
reverse current. This voltage is termed as the reverse breakdown voltage.

Graph 1
Procedure :

Forward V-I Characteristics :

1. Connections are made as per the connection diagram.

2. The sliding contact of the rheostat is set to minimum after the key is inserted.

34 Semiconductor Electronics
 3. Now, the rheostat contact is adjusted to provide a positive bias voltage.

4. Note the voltmeter and milli ammeter readings.

5. Repeat the process by increasing the forward current in equal steps by changing the rheostat slider.

6. It can be noted that, the current increases slowly in the beginning. For a certain value of

voltage, it shows a sharp increase. The corresponding voltage represents the cut-in voltage of

that diode.

[First quadrant of Graph 1]

Reverse V-I Characteristics :

1. Make the connection as per the circuit diagram.

2. Insert the key. Arrange the sliding contact of the rheostat to maximum.

3. Move the sliding contact of the rheostat to provide a reverse bias voltage. Note the voltmeter

and micro ammeter readings.

4. Repeat the process by changing the reverse voltage in equal steps.

5. Initially the current increases slowly and then rapidly when the reverse voltage surpasses a

certain value. This voltage is known as the reverse breakdown voltage. [IIIIrd quadrant of Graph 1]

Concept Builder-5

1. During the formation of P-N junction

(1) Holes diffuse from P-side to N-side (2) Electrons diffuse from P-side to N-side
(3) Holes diffuse from N-side to P-side (4) Both (2) and (3)

2. Which of the following is the correct relation between electrons and hole concentration in an
intrinsic semiconductor? (symbols have usual meanings)
(1) ne = nh = ni (2) ne >>> nh (3) nh >>> he (4) All of these

Semiconductor Electronics 35
3. Choose the correct statement among following.
(1) The current under reverse bias is almost voltage independent upto critical reverse bias voltage.
(2) For diode in reverse bias, the potential barrier increases
(3) For diode in forward bias, the potential barrier reduces
(4) Ali of these

4. Which of the following statement is correct for p-n junction under the forward bias?
(1) The forward current flowing in the circuit is of the order microampere
(2) The P-N junction provides high resistance
(3) After the threshold voltage the forward current increases significantly
(4) The current is due to minority charge carrier

8.2 Characteristic curves of a Zener diode and finding reverse breakdown voltage.
When the applied reverse bias voltage (V) reaches the breakdown voltage (Vz) of the Zener
diode, there is a large change in the current. After the breakdown voltage Vz, a large change in
the current can be produced by almost insignificant change in the reverse bias voltage. In other
words, zener voltage remains constant, even though current through the zener diode varies over
a wide range.
A Zener diode having zener voltage VZ and power dissipation rating PZ is connected across a
potential divider arrangement with maximum potential VZ across it If the potential drop across
the Zener diode is Vz and the rest drops across the protective resistance then we get V = Vz +
Iz Rp
PZ
Since Iz =
VZ

P 
⇒ V =VZ +  Z  RP
 RZ 

and RP =
(V − V ) V
Z Z

PZ
Procedure :

36 Semiconductor Electronics
 1. Note the least count of the given voltmeter and microammeter.
2. The voltmeter and microammeter should read zero with zero applied voltage. If not, then
correct the initial reading of the meter suitably.
3. The connections are made as per the circuit diagram. Take care that Zener diode is in reverse
bias mode and the terminal of the microammeter and voltmeter marked positive are
connected to the higher potential side of the power supply.
4. By adjusting the rheostat, voltmeter reading is increased from zero and in each time note
the corresponding reading in milliammeter.
5. The experiment is carried till the milliammeter shows a large deflection while the voltmeter
reading remains constant, indicating the break down voltage.
6. Plot the reverse characteristic curve by taking reverse voltage along -ve X-axis and reverse
current along -ve Y-axis.

Concept Builder-6

1. Choose the correct option about the breakdown voltage in a zener diode.
(1) It has constant value
(2) It destroys the diode
(3) It decreases when electric current increases
(4) It equals the electric current times the resistance

2. A zener diode (Vz = 6V) is used to maintain a constant voltage across a load resistance RL(1000
Ω) by using a series resistance Rs(100 Ω). If the emf of the source is 9V, then the current flowing
through load resistance is
(1) 6 mA (2) 3 mA (3) 5 mA (4) 7 mA

3. A zener diode is specified having a breakdown voltage of 8.1 V with a maximum power
dissipation of 346 mW. The maximum current that diode can handle is
(1) 34 mA (2) 42.7 mA (3) 36.2 mA (4) 52.6 mA

4. Choose the correct statement among the following

(1) Zener diode is used for regulating fluctuating voltage
(2) At small value of reverse bias voltage field ionisation takes place
(3) Zener diode is fabricated by lightly doping both p and n-sides of junction
(4) All of these

Semiconductor Electronics 37
 ANSWER KEY FOR CONCEPT BUILDERS

CONCEPT BUILDER-1 CONCEPT BUILDER-4

1. number of electron in Ge and Si are

1. (a) A·B = A · B AND gate
significant but negligibly small for carbon
[(∆Eg)c > 6 eV] (b) A·B = A + B = OR gate
2. 4.5 × 10 m 9 –3
3. (c)
2. X = A.B. is AND gate
4. (d) 5. (c)

CONCEPT BUILDER-2

1. 20 mA 2. 100 mA CONCEPT BUILDER-5

3. 22.5Ω 4. 13.33 mA 1. (1) 2. (1)

5. (c) 6. (c) 3. (4) 4. (3)

7. No

8. (a) 10 Ω (b) 1.0 × 107 Ω CONCEPT BUILDER-6

CONCEPT BUILDER-3
1. (1) 2. (1)
10
1. V 2. 200
π 3. (2) 4. (1)

3. 50 Hz, 100 Hz

38 Semiconductor Electronics
 Exercise - I
Energy Band Theory 5. Which of the following energy band

diagram shows the N-type semiconductor-

1. In conductors -
Conduction Conduction
(1) conduction band is completely empty
Band Band
but forbidden energy gap is small
(1) Eg =1eV (2) Inpurity level
(2) conduction and valence bands are
1eV
overlapped
Valence Valence
(3) valence band is completely filled but Band Band
the conduction band is completely Valence Valence
empty Band Band

(4) no energy band is present (3) Inpurity level (4) 1eV

Inpurity level
1eV
Conduction Conduction
2. The forbidden energy gap of a germanium
Band Band
semiconductor is 0.75 eV. The minimum
thermal energy of electrons reaching the
6. In insulators -
conduction band from the valence band
should be - (1) valence band is partially filled with

(1) 0.5 eV (2) 0.75 eV electrons

(3) 0.25 eV (4) 1.5eV (2) conduction band is partially filled with

electrons
3. The forbidden energy band gap in (3) conduction band is completely filled
conductors, semiconductors and
with electrons but the valence band is
insulators are EG1, EG2 and EG3
empty
respectively. The relation among them is -
(4) conduction band is empty and valence
(1) EG1 = EG2 = EG3
band is completely filled with electrons
(2) EG1 < EG2 < EG3

(3) EG1 > EG2 > EG3

7. The energy of a photon of sodium light
(4) EG1 < EG2 > EG3
(λ = 5890Å) equals the band gap of a

semiconductor. The minimum energy

4. The atomic bonding is same for which of
required to create an electron-hole pair is-
the following pairs -
(1) Ag and Si (1) 0.026 eV

(2) Ge and Si (2) 0.31 eV

(3) Ne and Ge (3) 2.1eV
(4) NaCl and Ge (4) 6.4 eV

Semiconductor Electronics 39
 Types of Semiconductors 13. GaAs is a -
and their properties (1) elemental semiconductor
(2) compound semiconductor
8. On increasing temperature the specific (3) insulator
resistance of a semiconductor - (4) metallic semiconductor
(1) decreases (2) increases
(3) remains constant (4) becomes zero 14. At absolute zero temperature, pure
germanium and silicon are-
9. Which of the following statements is not (1) conductor
correct? (2) good semiconductors
(1) Resistance of semiconductor decreases (3) ideal insulators
with increase in temperature (4) super conductors
(2) In an electric field, displacement of
holes is opposite to the displacement 15. Which of the following statements is not
of electrons true-
(3) Resistance of a conductor decreases (1) the resistance of intrinsic
with the increase in temperature semiconductor decreases with
(4) n-type semiconductors are neutral increase in temperature
(2) doping of pure Si with trivalent
10. Wires P and Q have the same resistance at impurities gives p-type semiconductor
ordinary (room) temperature. When (3) the majority carriers in n-type
heated, resistance of P increases and that semiconductors are holes
of Q decreases. We conclude that - (4) a p-n junction can act as a

(1) P and Q are conductors of different semiconductor diode

materials
V
(2) P is N-type semiconductor and Q is P- 16. For a metallic wire the ratio : (V =
I
type semiconductor
applied potential, I = current flowing)-
(3) P is semiconductor and Q is conductor
(1) does not depend upon temperature
(4) P is conductor and Q is semiconductor
(2) increases with increase in temperature
(3) decreases with increase in
11. In a good conductor the energy gap
between the conduction band and the temperature

valence band is - (4) increases or decrease by increase in

(1) Infinite (2) Wide temperature as according to nature of
(3) Narrow (4) Zero the metal

12. In a semi conducting material the 17. The resistivity of a semiconductor depends
mobilities of electrons and holes are µe and upon its-
µh respectively. Which of the following is (1) size
true? (2) type of atoms
(1) µe > µh (2) µe < µh (3) length

(3) µe = µh (4) µe < 0; µh > 0 (4) size and type of atom

40 Semiconductor Electronics
18. Those materials in which number of holes 23. Electric conduction in a semiconductor
in valence band is equal to number of takes place due to-
electrons in conduction band are called
(1) electrons only
(1) conductors
(2) holes only
(2) Intrinsic semiconductors
(3) p-type semiconductors (3) both electrons and holes
(4) n-type semiconductors (4) neither electrons nor holes

19. In p-type semiconductor holes move in

24. When phosphorus and antimony are mixed
(1) forbidden region
in germanium, then-
(2) conduction band
(3) valence band (1) p-type semiconductor is formed
(4) all the above regions (2) n-type semiconductor is formed
(3) both (1) and (2)
20. Which of the following statement is
(4) None of these
wrong?
(1) Resistance of extrinsic semiconductors
can be changed as required 25. P-type semiconductor is formed when -
(2) In n-type semiconductor the number A. As impurity is mixed in Si
of electrons increases in valence band B. Al impurity is mixed in Si
(3) In p-type semiconductors the number
C. B impurity is mixed in Ge
of holes increases in valence band
D. P impurity is mixed in Ge
(4) In pure semiconductor fermi band is
situated in between the valence band (1) A and C (2) A and D
and conduction band (3) B and C (4) B and D

21. In extrinsic semiconductors -

26. Platinum and silicon are cooled after
(1) The conduction band and valence band
heating up to 250ºC -
overlap
(2) The gap between conduction band and (1) resistance of platinum will increase
valence band is more than 16 eV and that of silicon decreases
(3) The gap between conduction band and (2) resistance of silicon will increase and
valence band is near about 1 eV
that of platinum decreases
(4) The gap between conduction band and
(3) resistance of both will decrease
valence band will be 100 eV and more
(4) resistance of both increases
22. Which of the following statement is true?
(1) In insulators the conduction band is 27. When a potential difference is applied
completely empty
across, the current passing through-
(2) In conductor the conduction band is
(1) a semiconductor at 0 K is zero
completely empty
(3) In semiconductor the conduction band (2) a metal at 0 K is finite
is partially empty at low temperature (3) a P-N diode at 300 K is finite if it is
(4) In insulators the conduction band is reverse biased
completely filled with electrons
(4) all

Semiconductor Electronics 41
 Electrical Conduction in Semiconductor 33. A potential difference of 2V is applied
between the opposite faces of a Ge crystal
28. If ne and vd be the number of electrons and
2
drift velocity in a semiconductor. When the plate of area 1 cm and thickness 0.5 mm.
temperature is increased - If the concentration of electrons in Ge is
(1) ne increases and vd decreases 19 3
2 × 10 /m and mobilities of electrons and
(2) ne decreases and vd increases 2
holes are 0.36 m /volt-sec and 0.14 m /volt
2

(3) Both ne and vd increases -sec respectively, then the current flowing
(4) Both ne and vd decreases through the plate will be -
(1) 0.25 A (2) 0.45 A
29. Forbidden energy gap of a silicon
(3) 0.56 A (4) 0.64 A
semiconductor is 1.12 eV. In order to
generate electron-hole pairs in it, the
maximum wavelength of the incident 34. The mean free path of a conduction
photons will be - electron in a metal is 5 × 10
-8
m. The
(1) 11080Å (2) 11250Å
electric field, required to be applied across
(3) 12370Å (4) 14400Å
the conductor so as to impart 1eV energy
30. Let np and ne be the numbers of holes and to the conduction electron, will be -
–7 7
conduction electrons in an extrinsic (1) 1 × 10 V/m (2) 2 × 10 V/m
semiconductor. (3) 3 × 10 V/m
7 7
(4) 4 × 10 V/m
(1) np > ne (2) np = ne
(3) np < ne (4) np ≠ ne
35. A hole diffuses from the p-side to the n-

31. The electron mobility in N-type germanium side in a p-n junction. This means that-
2
is 3900 cm /v.s and its conductivity is 6.24 (1) a bond is broken on the n-side and the
mho/cm, then impurity concentration will electron freed from the bond jumps to
be if the effect of cotters is negligible - the conduction band
15 3 13 3
(1) 10 /cm (2) 10 /cm (2) a conduction electron on the p-side
12 3 16 3
(3) 10 /cm (4) 10 /cm jumps to a broken bond to complete it
(3) a bond is broken on the n-side and the
32. In semiconductor the concentrations of electron free from the bond jumps to a
18 3
electrons and holes are 8 × 10 /m and 5 × broken bond on the p-side to complete it
18 3
10 /m respectively. If the mobilities of (4) a bond is broken on the p-side and the
2
electrons and hole are 2.3 m /volt-sec and electron free from the bond jumps to a
2
0.01m /volt-sec respectively, then
broken bond on the n-side to complete it
semiconductor is -
(1) N-type and its resistivity is 0.34 ohm-
metre 36. Mobility of electrons in N-type Ge is 5000
2
(2) P-type and its resistivity is 0.034 ohm- cm /volt sec and conductivity 5 mho/cm.
metre If effect of holes is negligible then impurity
(3) N-type and its resistivity is 0.034 ohm- concentration will be-
metre 15 3 14 3
(1) 6.25 × 10 cm (2) 9.25 × 10 cm
(4) P-type and its resistivity is 3.40 ohm-
13 3 13 3
metre (3) 6 × 10 cm (4) 9 × 10 cm

42 Semiconductor Electronics
 P-N Junction 41. The main cause of Zener breakdown is -
(1) the base semiconductor being
37. In a p-n junction- germanium
(1) high potential is at n side and low (2) production of electron-hole pairs due
potential is at p side to thermal excitation
(3) low doping
(2) high potential is at p side and low
(4) high doping
potential is at n side
(3) p and n both are at same potential 42. Which of the following statements is
correct?
(4) undetermined
(1) The depletion region of P-N junction
diode increases with forward biasing
38. If no external voltage is applied across P- (2) The depletion region of P-N junction
N junction, there would be - diode
decreases with reverse biasing
(1) No electric field across the junction
(3) The depletion region of P-N junction
(2) An electric field pointing from N-type diode
to P-type side across the junction does not change with biasing
(3) An electric field pointing from P-type (4) The depletion region of P-N junction
diode decreases with forward biasing
to N-type side across the junction
(4) A temporary electric field during 43. When reverse bias in a junction diode is
formation of P-N junction that would increased, the width of depletion layer -
subsequently disappear (1) increase
(2) decreases
(3) does not change
39. No bias is applied to a P-N junction, then (4) fluctuate
the current -
(1) Is zero because the number of charge 44. A semiconductor device is connected in a
series circuit with a battery and resistance.
carriers flowing on both sides is same
A current is found to pass through the
(2) Is zero because the charge carriers do circuit. If the polarity of the battery is
not move reversed, the current drops almost to zero.
The device may be -
(3) Is non-zero
(1) A P-type semiconductor
(4) None of these
(2) An N-type semiconductor
(3) A PN-junction
40. The main cause of avalanche breakdown (4) An intrinsic semiconductor

is-
45. The approximate ratio of resistances in the
(1) collision ionisation
forward and reverse bias of the PN-
(2) high doping
junction diode is -
(3) recombination of electron and holes 2 –2
(1) 10 : 1 (2) 10 :1
(4) none of these –4 4
(3) 1 : 10 (4) 1 : 10

Semiconductor Electronics 43
46. The dominant mechanisms for motion of 50. Diffusion current in a p-n junction is
charge carriers in forward and reverse greater than the drift current in
biased silicon P-N junctions are - magnitude-
(1) Drift in forward bias, diffusion in (1) if the junction is forward-biased
reverse bias (2) if the junction is reverse-biased
(2) Diffusion in forward bias, drift in (3) if the junction is unbiased
reverse bias (4) in no case
(3) Diffusion in both forward and reverse
bias 51. For a reverse bias p-n junction
(4) Drift in both forward and reverse bias (1) p region is positive and current is due
to electrons

47. The diffusion current in a p-n junction is (2) p region is positive and the current is

from - due to holes

(3) p region is negative and the current is
(1) p-side to n-side
due to electrons
(2) n-side to p-side
(4) p region is negative and the current is
(3) p-side to n-side if the junction is
due to both electron and holes
forward biased and in the opposite
direction if it is reverse biased
52. The p-n junction is a-
(4) n-side to p-side if the junction is
(1) ohmic resistance
forward biased and in the opposite
(2) non ohmic resistance
direction if it is reverse based
(3) positive resistance
(4) negative resistance
48. If the two ends of a p-n junction are joined
by a conducting wire, then - 53. The resistance of a reverse biased pn
(1) there will be no current in the circuit junction diode is of the order of:
(2) there will be steady current from n- (1) 1 ohm
2
(2) 10 ohm
side to p-side 3
(3) 10 ohm
6
(4) 10 ohm
(3) there will be steady current from p-
side to n-side 54. If the forward voltage in a diode is
(4) there will be a steady current in the increased, the width of the depletion
circuit region-
(1) decreases (2) increases
(3) fluctuates (4) does not change
49. The minority current in a p-n junction is-
(1) from the n-side to the p-side
55. On increasing the reverse bias to a large
(2) from the p-side to the n-side
value in p-n junction diode then value of
(3) from the n-side to the p-side if the current-
junction is forward-biased and in the (1) remains fixed
opposite direction if it is reverse biased (2) increases slowly
(4) from the p-side to the n-side if the (3) decreases slowly
junction is forward-biased and in the (4) suddenly increase
opposite direction if it is reverse biased

44 Semiconductor Electronics
56. In a forward biased p-n junction diode, the 59. In a p-n junction the depletion layer of
potential barrier in the depletion region is thickness 10
–6
m has potential across it is
of the form- 0.1 V. The electric field is (V/m) -
V V 7 –6
(1) 10 (2) 10
(1) (2) (3) 10
5
(4) 10
–5

p n p n

V V
Diode
(3) (4)
p n p n 60. Current in the circuit will be -
20Ω

57. A potential barrier of 0.50 V exists across

30Ω
a P-N junction. If the depletion region is 5.0
–7 i
× 10 m wide, the intensity of the electric 20Ω 5V
field in this region is -
5 5
(1) 1.0 × 10 V/m
6 5
(2) 1.0 × 10 V/m (1) A (2) A
40 50
5 6
(3) 2.0 × 10 V/m (4) 2.0 × 10 V/m 5 5
(3) A (4) A
10 20
58. A semiconductor X is made by doping a
germanium crystal with arsenic (Z = 33). A 61. In the following circuits PN-junction diodes
second semiconductor Y is made by doping D1, D2 and D3 are ideal for the following
germanium with indium (Z = 49). The two
potential of A and B, the correct increasing
are joined end to end and connected to a
order of resistance between A and B will
battery as shown. Which of the following
be [if following voltages are applied at A &
statements is correct?
B respectively]-
X Y
D1 R

D2 R

D3 R

A B
(1) X is P-type, Y is N-type and the junction
(i) – 10 V, – 5 V
is forward biased
(ii) – 5V, – 10 V
(2) X is N-type, Y is P-type and the junction
(iii) – 4V, – 12 V
is forward biased
(1) (i) < (ii) < (iii)
(3) X is P-type, Y is N-type and the junction
(2) (iii) < (ii) < (i)
is reverse biased
(4) X is N-type, Y is P-type and the junction (3) (ii) = (iii) < (i)

is reverse biased (4) (i) = (iii) < (ii)

Semiconductor Electronics 45
62. The current through an ideal PN junction 66. The diode used in the circuit shown in the
figure has a constant voltage drop of 0.5 V
shown in the following circuit diagram will
at all currents and a maximum power
be - rating of 100 milli watts. What should be
P N 700Ω the value of the resistor R, connected in
series with the diode for obtaining
5V 2V
maximum current -

R 0.5V

(1) 5 mA (2) 10 mA 1.5V

(3) 70 mA (4) 100 mA (1) 1.5 Ω (2) 5 Ω

(3) 6.67 Ω (4) 200 Ω

63. The value of current in the following 67. In the circuit given the current through the
diagram will be – zener diode is :

–4V –1V
PN 300Ω 20 V
–2
(1) 0.10 Ac (2) 10 A

(3) 1 A (4) 0 A (1) 10 mA (2) 6.67 mA

(3) 5 mA (4) 13.33 mA

64. In which of the following figures the 68. A two volts battery forward biases a diode
junction diode is in reverse bias however there is a drop of 0.5 V across the
diode which is independent of current.
N P
–5V Also a current greater than 10 mA produce
–10V
large joule loss and damages diode. If
(1) (2) diode is to be operated at 5 mA, the series
–5V resistance to be put is-
2V
–6V ()
10V

P N
(3) (4)
5V N P
(1) 3 kΩ (2) 300 kΩ
(3) 300 Ω (4) 200 kΩ
65. Find VAB -
69. The current flowing through the zener
diode in figure is-
30V 10R
A 500Ω
I1
10R 10R 5V 1kΩ
B 10V

(1) 10 V (2) 20 V
(1) 20 mA (2) 25 mA
(3) 30 V (4) none (3) 15 mA (4) 5 mA

46 Semiconductor Electronics
 Rectifier 73. In the half-wave rectifier circuit shown.
Which one of the following wave forms is
70. In the diagram, the input is across the
true for VCD, the output across C and D?
terminals A and C and the output is across
the terminals B and D, then the output is - A C
B
~ P Q VCD RL

A C B D

D (1)
(1) zero
(2) same as input
(2)
(3) full wave rectifier
(4) half wave rectifier

71. In a full wave rectifiers input ac current (3)

has a frequency ν. The output frequency of
current is -
(1) ν/2
(4)
(2) ν
(3) 2ν
(4) None of these
74. A full wave rectifier circuit along with the
input and output voltage a cross RL is
72. A sinusoidal voltage of peak value 200 volt
shown in the figure.
is connected to a diode and resistor R in
the circuit shown so that half wave
rectification occurs. If the forward
resistance of the diode is negligible
compared to R then rms voltage (in volt)
across R is approximately -

E0 = 200 volt ~ R
The contribution to output voltage from
diode – 2 -
(1) 200
(1) A, C
(2) 100
(2) B, D
200
(3) (3) B, C
2
(4) A, D
(4) 280

Semiconductor Electronics 47
75. The output current versus time curve of a 79. The combination of ‘NAND’ gates shown
rectifier is shown in the figure. The average here under (figure) are equivalent to –

value of the input current in this case is - A

C
Current →

i0 A
B C
Time →
(1) 0 (2) i0/π (1) An OR gate and an AND gate
respectively
(3) 2i0/π (4) i0
(2) An AND gate and a NOT gate
respectively
Logic Gates (3) An AND gate and an OR gate
respectively
76. Boolean algebra is essentially based on- (4) An OR gate and a NOT gate respectively
(1) logic (2) truth
(3) numbers (4) symbol 80. Which of the following gates will have an
output of 1?
77. Given below are four logic gate symbol (1) 1 (2) 0
0 1
(figure). Those for OR, NOR and NAND are
(3) 0 (4) 0
respectively- 1 1
y y
A A
B B 81. This symbol represents -
(a) (b) A
y
y y B
A A
B B (1) NOT gate (2) OR gate
(c) (d) (3) AND gate (4) NOR gate
(1) a, d, c
(2) d, a, b 82. The output of a NAND gate is 0 -
(3) a, c, d (1) If both inputs are 0
(4) d, b, a (2) If one input is 0 and the other input is 1
(3) If both inputs are 1
78. The following truth table corresponds to (4) Either if both inputs are 1 or if one of
the logic gate - the inputs is 1 and the other 0
A 0 0 1 1
B 0 1 0 1 83. The truth table given below is for-
X 0 1 1 1 A B Y
0 0 1
(1) NAND
0 1 0
(2) OR 1 0 0
(3) AND 1 1 1

(4) XOR (1) OR gate (2) AND gate

(3) XNOR gate (4) XOR gate

48 Semiconductor Electronics
84. Digital circuits can be made by repetitive 92. The truth table shown is of-
use of- A B Y
(1) OR gate (2) AND gate 0 0 0
0 1 1
(3) NOT gate (4) NAND gate 1 0 1
1 1 0
85. Which of the following relation is valid in (1) NAND gate
Boolean algebra - (2) NOR gate
(1) A + A = 0 (2) A + A = 2A (3) XOR gate
(3) A + A = 1 (4) A + A = A (4) XNOR gate

86. When all the inputs of a NAND gate are 93. Which of the following relations is valid for
connected together, the resulting circuit is- Boolean algebra -
(1) a NOT gate (2) an AND gate (1) A + A = A
(3) an OR gate (4) a NOR gate (2) A.A = A
(3) A ⋅ A = 0
87. Which of the following pairs are universal (4) All
gates-
(1) NAND, NOT (2) NAND, AND
94. To get an output 1, the input ABC should
(3) NOR, OR (4) NAND, NOR
be-
A
88. A NAND gate followed by a NOT gate is- B Y
(1) an OR gate (2) an AND gate C
(3) a NOR gate (4) a XOR gate (1) 101
(2) 100
89. The NOR gate is logically equivalent to an (3) 110
OR gate followed by - (4) 010
(1) an inverter (2) a NOR gate
(3) a NAND gate (4) an OR gate 95. The output of 2 input gate is 1 only if its
inputs are equal. It is true for-
90. The output of a two input NOR gate is in (1) NAND
state 1 when- (2) AND
(1) either input terminals is at 0 state (3) EX-NOR
(2) either input terminals is at 1 state (4) EX-OR
(3) both input terminals are at 0 state
(4) both input terminals are at 1 state 96. The circuit-shown here is logically
equivalent to-
91. ‘Output is LOW if and only if all the inputs A
Y
are HIGH’ indicate the logic gate for which
the above statement is true- B

(1) AND (2) OR (1) OR gate (2) AND gate

(3) NOR (4) NAND (3) NOT gate (4) NAND gate

Semiconductor Electronics 49
97. Which of the following will have an output 99. Which of the following relations is valid for
of 1 - Boolean algebra-
1 0 (1) A(B + B) =
A
(a) (b)
1 1 (2) A + AB = A
0 Y (3) A + 0 = A
(c) (d)
1 (4) All
(1) a
(2) b 100. Logic gates are the building blocks of a –
(3) c (1) abacus system (2) analog system
(4) d (3) digital system (4) none of these

98. The truth table for the following 101. How many NOR gates are required to form
combination of gates is- NAND gate-
A Y (1) 1 (2) 3
B (3) 2 (4) 4
A B Y A B Y
0 0 0 0 0 0
0 1 0 0 1 0
102. The logic symbols shown here are logically
(1) 1 0 1 (2) 1 0 0 equivalent to –
1 1 1 1 1 1 A Y A Y
A B Y A B Y B (a) B (b)
0 0 1 0 0 0 (1) ‘a’ AND and ‘b’ OR gate
0 1 1 0 1 1
(3) 1 0 1 (4) 1 0 1 (2) ‘a’ NOR and ‘b’ NAND gate
1 1 0 1 1 0 (3) ‘a’ OR and ‘b’ AND gate
(4) ‘a’ NAND and ‘b’ NOR gate

50 Semiconductor Electronics
 Exercise - II
1. Carbon, silicon and germanium have four 4. If the ratio of the concentration of
valence electrons each. At room temperature electrons to that of holes in a
which one of the following statements is
semiconductor is 7/5 and the ratio of
most appropriate?
currents is 7/4, then what is the ratio of
(1) The number of free conduction
electrons is negligible small in all the their drift velocities?
three. (1) 4/7 (2) 5/8
(2) The number of free electrons for (3) 4/5 (4) 5/4
conduction is significant in all the
three.
5. Mobility of electrons in a semiconductor is
(3) The number of free electrons for
conduction is significant only in Si and defined as the ratio of their drift velocity
Ge but small in C. to the applied electric field. If, for an n-
(4) The number of free conduction type semiconductor, the density of
electrons is significant in C but small 19 –3
electrons is 10 m and their mobility is
in Si and Ge
2
1.6 m (V.s) then the resistivity of the
2. Choose the only false statement from the semiconductor (since it is an n-type
following- semiconductor contribution of holes is
(1) the resistivity of a semiconductor
ignored) is close to :
increases with increase in
temperature (1) 2 Ωm (2) 0.4 Ωm

(2) substances with energy gap of the (3) 4 Ωm (4) 0.2 Ωm

order of 10 eV are insulators
(3) in conductors the valence and
6. In the energy band diagram of a material
conduction bands may overlap
shown below, the open circles and filled
(4) the conductivity of a semiconductor
increases with increases in circles denote holes and electrons

temperature respectively. The material is-

3. Carbon, Silicon and Germanium atoms

have four valence electrons each. Their
valence and conduction bands are
separated by energy band gaps
represented by (Eg)C, (Eg)Si and (Eg)Ge
(1) an n-type semiconductor
respectively. Which one of the following
relationships is true in their case- (2) a p-type semiconductor
(1) (Eg)C < (Eg)Ge (2) (Eg)C > (Eg)Si (3) an insulator
(3) (Eg)C = (Eg)Si (4) (Eg)C < (Eg)Si (4) a metal

Semiconductor Electronics 51
7. Which one of the following statement is 11. In an unbiased n-p junction electrons
FALSE? diffuse from n-region to p-region because:
(1) Pure Si doped with trivalent impurities
(1) holes in p-region attract them
gives a p-type semiconductor
(2) Majority carriers in a n-type (2) electrons travels across the junction
semiconductor are holes due to potential difference
(3) Minority carriers in a p-type (3) electron concentration in n-region is
semiconductor are electrons
more as compared to that in p-region
(4) The resistance of intrinsic
semiconductor decreases with (4) only electrons move from n to p region
increase of temperature and not the vice-versa.

8. In the middle of the depletion layer of

12. A 2 V battery is connected across AB as
reverse biased p-n junction, the
(1) electric field is zero shown in figure. The value of the current
(2) potential is maximum supplied by the battery when in one case
(3) electric field is maximum battery’s positive terminal is connected to
(4) potential is zero
A and in other case when positive terminal

9. The circuit has two oppositely connected of battery is connected to B will

ideal diodes in parallel. What is the respectively be:
current flowing in the circuit? 5Ω

D1

10Ω

D2
(1) 1.33 A (2) 1.71 A
(3) 2.00 A (4) 2.31 A A B

(1) 0.2 A and 0.1 A (2) 0.4 A and 0.2 A

10. Figure shows a circuit in which three
(3) 0.1 A and 0.2 A (4) 0.2 A and 0.4 A
identical dioes are used. Each diode has
forward resistance of 20Ω and infinite
backward resistance. Resistors R1 = R2 = R3 13. The reading of the ammeter for a silicon
= 50Ω. Battery voltage is 6V. The current diode in the given circuit is
through R3 is:
200 Ω

D1 R1
A
D2 D3 R2 + –
+ – 3V
6V R3
(1) 15 mA (2) 11.5 mA
(1) 50 mA (2) 100 mA
(3) 13.5 mA (4) 10 mA
(3) 25 mA (4) 60 mA

52 Semiconductor Electronics
14. Ge and Si diodes start conducting at 0.3 V 17. A zener diode is connected to a battery
and 0.7 V respectively. In the following and a load as shown below: The currents
figure if Ge diode connection are reversed, I, IZ and IL are respectively
the value of V0 changes by : (Assume that R = 4kΩ IL
A
the Ge diode has large breakdown voltage) I
IZ
60 V RL = 2kΩ
10 V = VZ

(1) 15 mA, 5 mA, 10 mA

(2) 15 mA, 7.5 mA, 7.5 mA

(1) 0.6 V (3) 12.5 mA, 5 mA, 7.5 mA

(2) 0.8 V (4) 12.5 mA, 7.5 mA, 5 mA

(3) 0.4 V
(4) 0.2 V 18. In the given circuit the circuit through
zener diode is

15. The circuit shown below contains two

R1 500Ω
ideal diodes, each with a forward
15V
resistance of 50Ω. If the battery voltage is 1500Ω R2 VZ = 10V
6V, the current through the 100 Ω
resistance (in Amperes) is: (1) 3.3 mA
D1 150Ω (2) 2.5 mA
(3) 5.5 mA
75Ω
(4) 6.7 mA
D2
100Ω
6V 19. In the given circuit the current through
(1) 0.027 Zener Diode is close to:
(2) 0.020 (R1 = 500Ω & R2 = 1500Ω)
(3) 0.030
I R1 500Ω
(4) 0.036
Iz I2
12V

I1
R2 1500Ω V
Vz2=10V R2
16. Zener diode is used for-
(1) rectification (1) 6.0 mA

(2) stabilization (2) 4.0 mA

(3) amplification (3) 6.7 mA

(4) producing oscillations in an oscillator (4) 0.0 mA

Semiconductor Electronics 53
20. The reverse breakdown voltage of a Zener 23. The electrical conductivity of a
diode is 5.6 V in the given circuit. semiconductor increases when
200 Ω
electromagnetic radiation of wavelength
ΙZ

9V
800 Ω shorter than 2480 nm is incident on it.
The band gap in (eV) for the
The current ΙZ through the Zener is :
semiconductor is
(1) 7 mA (2) 17 mA
(1) 2.5 eV (2) 1.1 eV
(3) 10 mA (4) 15 mA
(3) 0.7 eV (4) 0.5 eV

21. Figure shown a DC voltage regulator

24. A solid which is not transparent to visible
circuit, with a Zener diode of breakdown
voltage = 6V. If the unregulated input light and whose conductivity increases

voltage varies between 10 V to 16 V, then with temperature is formed by

what is the maximum Zener current? (1) Metallic binding
(2) Ionic binding
(3) Covalent binding
(4) Vander Waals binding

25. For LED’s to emit light in visible region of

electromagnetic light, it should have
(1) 2.5 mA (2) 3.5 mA
energy band gas in the range of :
(3) 7.5 mA (4) 1.5 mA
(1) 0.1 eV to 0.4 eV (2) 0.5 eV to 0.8 eV
(3) 0.9 eV to 1.6 eV (4) 1 .7 eV to 3.0 eV
22. A p-n junction (D) shown in the figure can
act as a rectifier. An alternating current
source (V) is connected in the circuit. 26. A photo-cell employs photoelectric effect
to convert-
D
~
R (1) Change in the frequency of light into a
V
change in electric voltage

The current (I) in the resistor (R) can be (2) Change in the intensity of illumination

shown by : into a change in photoelectric current

Ι Ι
(3) Change in the intensity of illumination
(1) (2)
into a change in the work function of
t t
Ι Ι the photocathode
(3) (4)
(4) Change in the frequency of light into a
t t
change in the electric current

54 Semiconductor Electronics
27. A p-n photodiode is made of a material 30. The combination of gates shown below
yields
with a band gap of 2.0 eV. The minimum
A
frequency of the radiation that can be
X
absorbed by the material is nearly- B

(1) 1 × 1014 Hz (2) 20 × 1014 Hz (1) XOR gate

(2) NAND gate
(3) 10 × 1014 Hz (4) 5 × 1014 Hz
(3) OR gate
(4) NOT gate
28. A p-n photodiode is fabricated from a
31. Truth table for system of four NAND gates
semiconductor with a band gap of 2.5 eV.
as shown in figure is
It can detect a signal of wavelength- A
Y
(1) 4000 Å (2) 6000 Å B

(3) 4000 nm (4) 6000 nm A B C A B C

0 0 0 0 0 1
(1) 0 1 0 (2) 0 1 1
1 0 1 1 0 0
29. The logic circuit shown below has the 1 1 1 1 1 0
input waveforms ‘A’ and ‘B’ as shown. Pick A B C A B C
0 0 1 0 0 0
out the correct output waveform.
(3) 0 1 0 (4) 0 1 1
A 1 0 0 1 0 1
Y
B 1 1 1 1 1 0

Input A
32. A system of four gates is set up as shown.
The ‘truth table’ corresponding to this
Input B system is :-
A

Output is :

(1)
B
A B Y A B Y
0 0 0 0 0 1
(2)
(1) 0 1 0 (2) 0 1 1
1 0 1 1 0 0
1 1 0 1 1 0
(3)
A B Y A B Y
1 0 0 0 0 1
(4) (3) 0 1 0 (4) 0 1 0
1 1 1 1 0 0
0 0 1 1 1 1

Semiconductor Electronics 55
33. Identify the gate and match A, B, Y in 36. The following figure shows a logic gate

bracket to check circuit with two inputs A and B and the

A
output C. The voltage waveforms of A, B
AB
and C are as shown below-
B Y
A
logic gate
(1) AND (A =1, B = 1, Y =1) C
circuit
(2) OR (A = 1, B = 1, Y = 0) B
1
(3) NOT (A = 1, B = 1, Y = 1)

(4) XOR (A = 0, B = 0, Y = 0) A t

34. Truth table for the given circuit will be B t

x 1

z C t
The logic circuit gate is-
y
(1) AND gate (2) NAND gate
x y z x y z (3) NOR gate (4) OR gate
0 0 1 0 0 0
(1) 0 1 1 (2) 0 1 0 37. In the following circuit, the output Y for all
1 0 1 1 0 0 possible inputs A and B is expressed by
1 1 0 1 1 1
the truth table-

x y z x y z A A Y
0 0 1 0 0 0 B B
(3) 0 1 1 (4) 0 1 1 A B Y
1 0 1 1 0 1 0 0 0
(1) 0 1 1
1 1 1 1 1 1
1 0 1
1 1 1
A B Y
35. To get output ‘1’ at R, for the given logic
0 0 0
gate circuit the input values must be- (2) 0 1 0
1 0 0
1 1 1
A B Y
0 0 1
(3) 0 1 1
1 0 1
(1) x = 0, y = 1 1 1 0

(2) x = 1, y = 1 A B Y
0 0 1
(3) x = 0, y = 0 (4) 0 1 0
1 0 0
(4) x = 1, y = 0 1 1 0

56 Semiconductor Electronics
38. The circuit as shown in figure is equivalent 40. The following figure shows a logic gate
to circuit with two inputs A and B the output
Y. The voltage waveforms of A, B and Y are
as given–
(1) NOR gate (2) OR gate
Logic gate
(3) AND gate (4) NAND gate circuit

A1
0
39. To get an output Y = 1 from the circuit
B1
shown below, the input must be – 0
1
A Y
0
B Y
C The logic gate is –

A B C (1) OR gate

(1) 0 1 0 (2) AND gate

(2) 0 0 1 (3) NAND gate

(3) 1 0 1 (4) NOR gate

(4) 1 0 0

Semiconductor Electronics 57
 Exercise - III

For Questions (1 to 11) 4. Assertion: The semiconductor used for

Read the Assertion and Reason carefully fabrication of visible LED must at least
and mark the correct options.
have a band gap of 1.8eV.
(A) Both Assertion and Reason are true and
Reason is the correct explanation of Reason: The spectral range of visible light
Assertion. is from 0.4 eV to 1.8 eV.
(B) Both Assertion and Reason are true but
(1) A (2) B
Reason is not correct explanation of
Assertion. (3) C (4) D
(C) Assertion is true but Reason is false.
(D) Assertion and Reason are false. 5. Assertion: Photodiodes are preferred to be

used in reverse bias.

1. Assertion: In solid each electron will have
a different energy level. Reason: When we are detecting change in

Reason:- In solid crystal each electron has intensity of light based on change in diode

a unique position and no two electrons see current, it is easily detectable in reverse

exactly the same pattern of surrounding bias operation.

charges. (1) A (2) B
(1) A (2) B (3) C (4) D
(3) C (4) D

6. Assertion: GaAs is preferred for making

2. Assertion: Current in semiconductor material
solar panels.
is sum of current due to free electron and
Reason: ∆Eg for GaAs is 1.5 eV and sun's
current due to holes.
radiation has highest intensity around this
Reason: When we apply potential difference
energy level.
across semiconductor free electrons and
(1) A (2) B
holes move in same direction.
(1) A (2) B (3) C (4) D

(3) C (4) D
7. Assertion: In a N-type semiconductor, the

3. Assertion: In a semiconductor, the number of holes get reduced.

conduction electrons have a higher Reason: Rate of recombination of holes
mobility than holes. would increase due to the increase in the
Reason: Mass of electron is less than number of electrons
effective mass of hole.
(1) A (2) B
(1) A (2) B
(3) C (4) D
(3) C (4) D

58 Semiconductor Electronics
8. Assertion: Avalanche breakdown dominates For Questions (12 to 15) Multiple options

when the doping concentration is high and are correct:

depletion layer is thin.

12. In a p – n junction diode not connected to
Reason : Zener breakdown occurs due to
any circuit,
the collision of minority charge carrier.
(1) The potential is the same everywhere
(1) A (2) B (2) The p -type side is at a lower potential
(3) C (4) D than the n type side
(3) There is an electric field at the junction

9. Assertion: The resistivity of a semiconductor directed from the n-type side to the

increases with temperature. p-type side

Reason: The atoms of a semiconductor (4) There is an electric field at the junction

vibrate with larger amplitude at higher directed from the p-type side to the

temperatures thereby increasing its n-type side

resistivity.
(1) A (2) B 13. The impurity atoms with which pure silicon

(3) C (4) D should be doped to make a p-type

semiconductor are those of

10. Assertion: NAND or NOR gates are called
(1) phosphorus (2) boron
digital building blocks.
(3) antimony (4) aluminium
Reason : The repeated use of NAND or NOR
gates can produce all the basic or complex
gates. 14. Holes are charge carriers in

(1) A (2) B (1) intrinsic semiconductors

(3) C (4) D (2) ionic solids

(3) p-type semiconductors

11. Assertion : To get a steady dc output from
(4) metals
the pulsating voltage received from a full
wave rectifier we can connect a capacitor
across the output parallel to the load RL. 15. Which one of the following statements is

Reason : To get a steady dc output from correct in the case of light emitting diodes?
the pulsating voltage received from a full (1) It is a heavily doped p-n junction.
wave rectifier we can connect an inductor (2) It emits light only when it is forward biased.
in series with RL.
(3) It emits light only when it is reverse biased.
(1) A
(4) The energy of the light emitted is equal
(2) B
(3) C to or slightly less than the energy gap

(4) D of the semiconductor used.

Semiconductor Electronics 59
16. Match the statements of column A with 18. Match the statements of Column A with

those of column B. those of Column B.

Column A Column B Column A Column B
(P) Voltage (A) Diode (P) Detecting optical (A) Light

regulation signals emitting

diode
(Q) Rectifier (B) Pentavalent dopant
(Q) Convert electrical (B) Solar cell
(R) Phosphorus (C) Trivalent dopant
energy into light
(S) Indium (D) Zener diode
(R) Convert optical (C) Capacitor
(1) P → D; Q → B; R → C; S → A radiation into
(2) P → D; Q → C; R → B; S → A electricity

(3) P → D; Q → A; R → B; S → C (S) Filter circuit (D) Photo

element diode
(4) P → C; Q → D; R → A; S → B
(1) P → D; Q → B; R → C; S → A
(2) P → D; Q → C; R → B; S → A
17. Match the following
(3) P → D; Q → A; R → B; S → C
(a) p-type (1) Pure
(4) P → C; Q → D; R → A; S → B
semiconductor semiconductor

(b) Intrinsic (2) Doped

semiconductor semiconductor

(c) Extrinsic (3) Majority

semiconductor carriers are

electrons

(d) n-type (4) Majority

semiconductor carriers are

holes

(1) a-3, b-2, c-4, d-1

(2) a-1, b-2, c-4, d-3

(3) a-4, b-1, c-2, d-3

(4) a-2, b-1, c-4, d-3

60 Semiconductor Electronics
 Exercise – IV (Previous Year Questions)
1. In a n-type semiconductor, which of the 4. The barrier potential of a p-n junction
following statement is true: [NEET_2013] depends on: [AIPMT_2014]
(1) Holes are majority carriers and (a) type of semi conductor material
trivalent atoms are dopants. (b) amount of doping
(2) Electrons are majority carriers and (c) temperature
trivalent atoms are dopants. (1) (a) and (b) only
(3) Electron are minority carriers and (2) (b) only
pentavalent atoms are dopants (3) (b) and (c) only
(4) Holes are minority carriers and (4) (a), (b) and (c)
pentavalent atoms are dopants.
5. Which logic gate is represented by the
following combination of logic gates?
2. The output (X) of the logic circuit shown
[AIPMT_2015]
in figure will be- [AIPMT_2013]
Y1
A
X
Y
(1) X = A.B (2) X = A.B
(3) X = A . B (4) X= A + B B
Y2

(1) NAND
3. The given graph represents V-I
(2) AND
characteristic for a semiconductor device.
(3) NOR
[AIPMT_2014]
(4) OR

I
A
6. Consider the junction diode as ideal. The
V
B value of current flowing through AB is:
[AIPMT_2016]
Which of the following statement is correct?
(1) It is V-I characteristic for solar cell
where, point A represents open circuit
voltage and point B short circuit (1) 0 A (2) 10–2 A
current. (3) 10–1 A (4) 10–3 A
(2) It is for a solar cell and the point A and
B represents open circuit voltage and 7. The given electrical network is equivalent
current, respectively. to : [NEET_2017]
(3) It is for photodiode and points A and B
represents open circuit voltage and
current respectively. (1) AND gate
(4) If is for a LED and points A and B (2) OR gate
represents open circuit voltage and
(3) NOR gate
short circuit current, respectively.
(4) NOT gate

Semiconductor Electronics 61
8. Which one of the following represents 12. For a p-type semiconductor, which of the
forward bias diode? [NEET_2017] following statements is true?
0V R –2V [NEET_2019]
(1)
–4V R –3V
(1) Holes are the majority carriers and
(2) pentavalent atoms are the dopants.
–2V R +2V
(2) Electrons are the majority carriers and
(3)
3V R 5V pentavalent atoms are the dopants.
(4) (3) Electrons are the majority carriers and
trivalent atoms are the dopants.
9. In the combination of the following gates (4) Holes are the majority carriers and
the output Y can be written in terms of trivalent atoms are the dopants.
input A and B as [NEET_2018]
A 13. The circuit diagram shown here
B
corresponds to the logic gate.
Y
[NEET_2019]
+6V

(1) A ⋅ B (2) A ⋅ B + A ⋅ B 0 R
A
(3) A ⋅ B + A ⋅ B (4) A + B 1
0
B
1
10. In a P-N junction diode, change in
LED(Y)
temperature due to heating [NEET_2018]
(1) affects only reverse resistance R

(2) affects only forward resistance (1) NOR (2) AND

(3) does not affect resistance of p-n (3) OR (4) NAND
junction
(4) affects the overall V-I characteristics 14. For the logic circuit shown, the truth table
of p-n junction is: [NEET_2020]

A
11. The correct Boolean operation
Y
represented by the circuit diagram drawn
B
is [NEET_2019]
+6V
A B Y A B Y
0 R
0 0 1 0 0 1
A 1
LED (Y) (1) 0 1 1 (2) 0 1 0
1 0 1 1 0 0
0 R
1 1 0 1 1 0
B 1
A B Y A B Y
0 0 0 0 0 0
(3) 0 1 0 (4) 0 1 1
(1) NAND (2) NOR
1 0 0 1 0 1
(3) AND (4) OR
1 1 1 1 1 1

62 Semiconductor Electronics
15. The solids which have the negative 20. The electron concentration in an n-type
temperature coefficient of resistance are: semiconductor is the same as hole
[NEET_2020] concentration in a p-type semiconductor.
(1) semiconductors only An external field (electric)is applied across
each of them. Compare the currents in
(2) insulators and semiconductors
them. [NEET_2021]
(3) metals
(1) current in n-type = current in p-type
(4) insulators only
(2) current in p-type > current in n-type
(3) current in n-type > current in p-type
16. The increase in the width of the depletion (4) No current will flow in p-type, current
region in a p-n junction diode is due to: will only flow in n-type
[NEET_2019]
(1) both forward bias and reverse bias 21. For the given circuit, the input digital
signals are applied at the terminals A, B
(2) increase in forward current
and C. What would be the output at the
(3) forward bias only
terminal y? [NEET_2021]
(4) reverse bias only
t1 t2 t3 t4 t5 t6
5
A
17. Out of the following which is a forward 0
biased diode?
5
[NEET_2020(Covid)] B
–4V 0
(1) –2V

2V
(2) 5V 5
C
–2V 0
(3) +2V
A
0V
(4) –3V

B
18. Which of the following gate is called
y
universal gate?
[NEET_2020(Covid)] C
(1) OR gate (2) AND gate
t1 t2 t3 t4 t5 t6
(3) NAND gate (4) NOT gate y
(1) 0V
19. An intrinsic semiconductor is converted 5V
into n-type extrinsic semiconductor by 0V
(2)
doping it with :- [NEET_2020(Covid)] 5V
(3)
(1) Phosphorous (2) Aluminium
(3) Silver (4) Germanium 5V
(4)
0V

Semiconductor Electronics 63
22. Consider the following statements (A) and A
24.
(B) and identify the correct answer. C
(A) A zener diode is connected in reverse
B
bias, when used as a voltage regulator.
The truth table for the given logic circuit
(B) The potential barrier of p-n junction
is: [NEET_2022]
lies between 0.1 V to 0.3 V.
A B C A B C
[NEET_2021]
0 0 0 0 0 1
(1) (A) and (B) both are correct.
(1) 0 1 1 (2) 0 1 0
(2) (A) and (B) both are incorrect. 1 0 1 1 0 0
(3) (A) is correct and (B) is incorrect. 1 1 0 1 1 1

(4) (A) is incorrect but (B) is correct. A B C A B C

0 0 1 0 0 0
(3) 0 1 0 (4) 0 1 1
P N P N 1 0 1 1 0 0
23.
1 1 0 1 1 1

(a)
25. Given below are two statements:
P N N P
Statement I : Photovoltaic devices can

convert optical radiation into electricity.

Statement II : Zener diode is designed to

(b)
operate under reverse bias in breakdown
N P N P
region. [NEET_2023]

In the light of the above statements,

choose the most appropriate answer from

(c)
the options given below:
In the given circuits (a), (b) and (c), the
(1) Both Statement I and Statement II are
potential drop across the two p-n
correct ·
junctions are equal in:
(2) Both Statement I and Statement II are
[NEET_2022]
incorrect.
(1) Circuit (a) only
(3) Statement I is correct but Statement
(2) Circuit (b) only
II is incorrect.
(3) Circuit (c) only
(4) Statement I is incorrect but
(4) Both circuits (a) and (c)
Statement II is correct.

64 Semiconductor Electronics
26. A full wave rectifier circuit consists of two 28. On the basis of electrical conductivity,
p-n junction diodes, a centre-tapped which one of the following material has
transformer, capacitor and a load the smallest resistivity?
resistance. Which of these components [NEET_2023(Manipur)]
remove the ac ripple from the rectified (1) Germanium
output? [NEET_2023] (2) Silver
(1) A centre-tapped transformer (3) Glass
(2) p-n junction diodes (4) Silicon
(3) Capacitor
(4) Load resistance 29. A p-type extrinsic semiconductor is
obtained when Germanium is doped with:
27. For the following logic circuit, the truth [NEET_2023(Manipur)]
table is: [NEET_2023] (1) Antimony
A (2) Phosphorous
(3) Arsenic
Y
(4) Boron
B
A B Y 30. The given circuit is equivalent to:
0 0 1 [NEET_2023(Manipur)]
(1) 0 1 1
1 0 1
1 1 0

A B Y
0 0 0
(2) 0 1 1 (1)
1 0 1
1 1 1
(2)
A B Y
0 0 1
(3) 0 1 0 (3)
1 0 1
1 1 0
(4)
A B Y
0 0 0
(4) 0 1 0
1 0 0
1 1 1

Semiconductor Electronics 65
 ANSWER KEY

Exercise-I
Que. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Ans. 2 2 2 2 2 4 3 1 3 4 4 1 2 3 3 2 2 2 3 2
Que. 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Ans. 3 1 3 2 3 2 4 1 1 4 4 1 4 2 3 1 1 2 1 1
Que. 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60
Ans. 4 4 1 3 4 2 1 1 1 1 4 2 4 1 4 4 1 4 3 2
Que. 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80
Ans. 3 2 4 2 1 2 4 3 4 3 3 2 2 2 1 1 3 2 1 3
Que. 81 82 83 84 85 86 87 88 89 91 91 92 93 94 95 96 97 98 99 100
Ans. 1 3 3 4 3 1 4 2 1 3 4 3 4 1 3 1 3 1 4 3
Que. 101 102
Ans. 4 4

Exercise-II
Que. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Ans. 3 1 2 4 2 2 2 3 3 1 3 2 2 3 2 2 4 1 4 3
Que. 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Ans. 2 3 4 3 4 2 4 1 1 3 4 4 1 3 4 1 1 1 3 3

Exercise-III
Que. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Ans. 1 3 2 3 1 1 1 4 4 1 2 2,3 2,4 1,3 1,2,4 3 3 3

Exercise-IV (Previous Year Questions)

Que. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Ans. 4 3 1 4 2 2 3 1 2 4 1 4 1 3 2 4 4 3 1 3
Que. 21 22 23 24 25 26 27 28 29 30
Ans. 3 3 4 3 1 3 2 2 4 4

66 Semiconductor Electronics