Power Electronics Lab Manual Department of EEE
Circuit Diagram
V-I Characteristic of SCR
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Power Electronics Lab Manual Department of EEE
Expt.No: CHARACTERISTICS OF SCR Date:
Aim:
To obtain the forward conduction characteristics of the SCR and to measure the holding
current and latching currents.
Apparatus Required:
Sl.No Name of the Equipment Model/Range Quantity
1. SCR TYN612 1 no
2. Ammeter (0-10mA)MC 1 no
3. Ammeter (0-100mA)MC 1 no
4. Voltmeter (0-30V)MC 1 no
Bred Board / /Connecting Wires /
5. as required
Patch chords
Theory:
A SCR is a four layer three terminal semiconductor switching device of PNPN structure with
three PN junctions. The three terminals are anode, cathode and gate. SCRs are manufactured by
diffusion.
When the anode voltage is made positive with respect to cathode, the junctions J1 and J3
are forward biased and junction J2 is reverse biased. A small leakage current flows from anode to
cathode. The thyristor is then said to be in forward blocking or OFF state condition. If V AK is
increased to a sufficient larger value, the reverse biased junction J2 will break. This is known as
avalanche breakdown and corresponding voltage is called forward breakdown voltage (V BO). Now
the device is in ON state. Latching current is defined as the minimum amount of anode current
required to maintain the thyristor in ON state immediately after the thyristor has been turned ON
and the gate signal has been removed. However, if the forward anode current is reduced below a
level known as holding current (IH), a depletion region will develop around junction J2 due to the
reduced number of carriers and the thyristor will be in the blocking state. Holding current is the
minimum anode current required to maintain the thyristor in ON state. Holding current is less than
latching current.
When the cathode is positive with respect to anode, junction J2 is forward biased but
junction J1 and J3 are reverse biased. Now the thyristor will be in reverse blocking state and
reverse leakage current known as reverse current known as I R would flow through the device.
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Power Electronics Lab Manual Department of EEE
Tabular Column:
IG = (mA) IG = (mA)
Sl.No
VAK (V) IA (mA) VAK (V) IA (mA)
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Power Electronics Lab Manual Department of EEE
Procedure:
1. Connect the circuit as shown in figure.
2. Switch on the main AC supply
3. Vary the pot3 and set the gate current (4 mA to 5 mA)
4. Slowly increase VAK by varying pot4 till the thyristor gets turned ON. Note down the
ammeter (IA) and voltmeter (VAK) readings.
5. Now note down the forward breakdown voltage and latching current.
6. Further increase VAK and note the anode current
7. Now reduce VAK till the thyristor turned OFF and note down the holding current
8. For various gate current take the readings and tabulate.
9. Plot the graph VAK versus IA.
Result:
Thus the characteristic of SCR is studied and the characteristic curve is plotted.
