INTRODUCTION

The material whose electrical conductivity lies between those of

conductor and insulators are known as semiconductor

Silicon. 1.1EV
Germanium. 0.7EV
Cadmium sulphide 2.4EV
 Semiconductor are crystalline or amorphous solids with distinct
electrical characteristics
 They are high resistance higher than typical resistance material
but still of much lower resistance than insulators
 Their resistance decreases as their temperature increases
 Silicon is most widely used semiconductor

DISCOVERY
 Whenever you will learn about the history of electricity and
electronics you will find that a lot of the ground breaking work
was done I’m the 19th century .the situation is no different for
semiconductor.
 Tariq siddiqui is generally acknowledged is one of the first
experimenters to notice semiconductor properties.
 ENERGY BAND DIAGRAM

An energy band diagram is a graphical representation of the energy

levels in a solid, typically a semiconductor material.

1. Valence Band (VB): Energy range where electrons are bound to

atoms.
2. Conduction Band (CB): Energy range where electrons can flow freely.
3. Forbidden Gap (Eg): Energy gap between VB and CB
 INTRINSIC SEMICONDUCTOR
Semiconductors that are chemically pure, in other words,
free from impurities are termed as intrinsic
semiconductors.
In intrinsic semiconductors, the number of excited
electrons is equal to the number of holes; n = p. They are
also termed as undoped semiconductors or i-type
semiconductors.
Silicon and germanium are examples of i-type
semiconductors. These elements belong to the IVth Group
of the periodic table and their atomic numbers are 14 and
32 respectively.

EXTRINSIC SEMICONDUCTOR
When small amount of chemical impurity is added to an intrinsic
semiconductor,then the resulting semiconductor material is known as
extrinsic semiconductor .the extrinsic semiconductor is also known as
doped semiconductor . the process of Adding impurity in the intrinsic
semiconductor is known as doping
The doping of semiconductor increases their conductivity
Based on type of doping,the extrinsic semiconductor are classified into
two types.N-type semiconductor and p-type semiconductor .when the
pentavalent impurity is added to an intrinsic semiconductor,then the
resulting semiconductor is themed as N-type semiconductor.On the
another hand when trivalent impurity is added to pure
semiconductor ,then the obtained semiconductor is known as
P-type semiconductor.

N-TYPE SEMICONDUCTOR
 Semiconductor which are obtaining by introducing
pentavalent impurity atoms are known as N – type
semiconductor.
 Examples are P,Sb,As and Bi .these elements have 5
electrons in their shell . out of which 4 electrons will
form covalent bond with neighboring atoms and 5 th
electrons will be available as current carriers.
 In N-type semiconductor current will flows due to
movement of electrons and holes but majority of
through electrons .thus the electron in N-type
semiconductor is known as majority c charge carriers
while holes as minority charge carriers.

P-TYPE SEMICONDUCTOR
 Semiconductor which are obtaining by introducing
trivalent impurity atoms are known as p – type
semiconductor.
 Examples are Ga,Al,B.these elements have 3
electrons in their valance shell which will form
covalent bond with neighboring atom .
 The fourth covalent bond will remain incomplete .a
vacancy which exists in the incomplete covalent
bond constitute a hole. The impurity atom is known
as acceptor atom.
 In P-type semiconductor current flows due movement
of electrons and holes but majority of through
holes.thus . holes in p-type semiconductor are known
as majority charge carriers while electron as minority
charge carriers.
 MASS ACTION LAW
Addition is n-type impurities decrease the number
of holes below a level.similarly,the addition of p-
type impurities decrease the number of electrons
below a level.it has been experimentally found that
under thermal equilibrium fro any semiconductor
the product of no.of holes and the no.of electrons
is constant and independent of amount of
doping .this relation is known as action law

BARRIER FORMATION IN
P-N JUNCTION DIODE
The holes of p-sides diffuses to the n-side while
the free electron’s from n-Type diffuses to the p-
type .this movement occurs because of charge
density gradient.
This leaves the negative acceptor ions on the p-
side and positive donor ions on the n-type
uncovered in the vicinity of the junction .Barrier
formation in P-N Junction Diode .this there is
negative charge on p-side and positive on n-
side.this setup potential difference across the
junction and hence an internal electric filed
directed from n-side to p-side.Equilibrium is
established when the field become large enough to
stop further diffusion of the majority charge carrier.
The region which become depleted of the mobile
charge carrier is called the depletion region .the
potential barrier across the depletion region is
called potential barrier .width of depletion region
depends upon the doping level . the higher the
doping level ,thinner will be the depletion region.

DEPLETION REGION

It is a region near the p-n junction that is

depleted of any mobile charge carrier
The depletion region depends upon

1.The type of biasing

2.Extend of doping
 POTENTIAL BARRIER (VB)
Due to accumulation of immobile ion cores in the
junction ,a potential difference is developed which
prevent the further movement of majority charge
across the junction.

P-N JUNCTION DIODE

A P-N junction is a boundary or interface between
two different types of semiconductor materials
within a single crystal structure :the P-type
semiconductor and the N-type semiconductor.
The P-type semiconductor is doped with acceptor
impurities,typically elements like boron or
aluminum ,creating an excess of “hole”or positive
charge carrier in the crystal lattice . On the other
hand,the N-type semiconductor is doped with
donor impurities,introducing an abundance of free
electron’s as major carriers.
When these two types of semiconductor P-type and
N-type are brought together to form a junction,a
region near the interface undergoes a process
called “Junction formation or”depletion region
formation”.

In the depletion region:

1.Electron diffusion: electrons form the N-type
semiconductor diffuse across the junction into the
p-type semiconductor due to their higher
concentration in the N-type material.
2. Hole diffusion: Holes from the P-type
semiconductor diffuse Into the N-type
semiconductor due to their higher concentration in
the P-type material.
CONCLUSION

Semiconductors are the backbone of modern

electronics, revolutionizing the way we live, work,
and communicate. Unique electrical properties
enable control over electrical current. Intrinsic and
extrinsic semiconductors have distinct
characteristics.Various materials (Si, Ge, GaAs) suit
different applications. Fabrication techniques
produce high-purity crystals.Doping and
implantation create regions with specific electrical
properties.

BIBLIOGRAPHY
1)WWW.Ncert.com
2) WWW.CBSE.com
3) www.icbse.com

S.NO TOPIC PAGE.NO

1. 1
INTRODUCTIO
N
 DISCOVER
 Y
2. ENERGY BAND
DIAGRAM 2
3. INTRINSIC
SEMICONDUCT 3
OR
4. EXTRINSIC
SEMICONDUCT 4
OR
5. N-TYPE
SEMICONDUCT 5
OR
6. P- TYPE
SEMICONDUCT 6
OR
7. MASS ACTION
LAW 7
8. BARRIER
FORMATION IN 7-8
P-N JUNCTION
9. DEPLETION
REGION 8
10. P-N
JUNCTION 9
DIODE
11. CONCLUSION
10
12.
BIBLIOGRAPHY 10
SEMICONDUCTOR