NOVEMBER 2024

PROJECT
REPORT
DC and Small Signal
analysis of DC feedback
Small Signal bias CS FET

Submitted to:
Dr. Sanjeev Kumar Mishra

Submitted by: Arpit Sethi

ID- B223010
BRANCH - ETC
INTERNATIONAL INSTITUTE OF INFORMATION TECHNOLOGY,
BHUBANESWAR
02
AIM OF THE EXPERIMENT:
To study the DC and Small Signal analysis of DC feed-back Small
Signal bias CS FET.

APPARATUS REQUIRED:
JFET
RESISTORS
CAPACITORS
DC POWER SUPPLY
FUNCTION GENERATOR
DSO
MULTIMETER
CONNECTING WIRES

THEORY:
DC ANALYSIS:
The DC analysis of a Common-Source (CS) Field-Effect Transistor
(FET) amplifier with feedback bias involves understanding how
the DC operating point is set and maintained through feedback,
usually in a self-bias or voltage-divider bias configuration. This
process is crucial for ensuring that the FET operates in the
correct region, typically in the saturation region for
amplification.
03
Basic Concept of Feedback Biasing
In a CS FET amplifier, feedback bias is employed to stabilize
the operating point against variations in temperature or
transistor characteristics.
Feedback is typically provided through a resistor in the
source leg, providing negative feedback. This configuration
helps in maintaining a stable bias point by adjusting the
source voltage (and hence the gate-source voltage, VGS​)
according to the drain current ID​.

Biasing Arrangements
Self-Bias Configuration: In self-bias, a resistor RS​ is
connected in the source leg without additional external
biasing components at the gate, which is typically connected
to ground through a resistor RG​.
Voltage-Divider Bias: In voltage-divider bias, a resistive
divider network sets the gate voltage, offering more control
over VGS​ and stabilizing the bias point.

CIRCUIT DIAGRAM:
04
For DC analysis of a Common-Source (CS) FET amplifier with
feedback bias, two main configurations are used:
1. Self-Bias Configuration
Circuit: Gate grounded via RG​; source grounded via RS​; drain
connected to VDD​ through RD​.
Key Steps:
Gate voltage VG≈0V.
Source voltage VS=ID×RS​.
VGS=−VS.
Calculate ID​ using FET characteristic equations.
Benefits: Simple and stabilizes ID​ through feedback from RS​.
2. Voltage-Divider Bias Configuration
Circuit: Gate voltage set by resistive divider R1​ and R2​; source
grounded via RS​; drain connected to VDD via RD​.
Key Steps:
Gate voltage VG=VDD⋅(R2/(R1+R2)).
Source voltage VS=ID×RS​.
VGS=VG−VS.
Calculate ID​ using FET characteristic equations.
Benefits: More stable VGS​ and ID due to controlled VG​ and RS​
feedback.
Both configurations set a stable operating point with feedback to
maintain consistent performance.
 05
In a Common-Source (CS) FET amplifier with feedback bias, DC
analysis aims to establish a stable operating point (Q-point) by
using a feedback resistor RS in the source leg, which provides
negative feedback to stabilize the drain current ID. This feedback
biasing method helps keep the amplifier’s performance consistent
by adjusting the gate-source voltage VGS according to variations
in ID, usually caused by temperature changes or FET characteristic
shifts. Two common configurations are used: self-bias, where the
gate is grounded through a resistor RG and feedback is provided by
RS ; and voltage-divider bias, where a resistor network sets the
gate voltage, and RS further stabilizes GS. By counteracting
changes in ID, feedback bias ensures reliable operation, though it
may slightly reduce the amplifier’s gain due to the feedback
mechanism.

SMALL SIGNAL ANALYSIS:

TRANSCONDUCTANCE:
Definition: gm is the rate of change of the drain current ID with respect to
the gate-source
voltage VGS in the saturation region, given by gm = ∂ID/∂VGS
Role: gm directly influences the gain of the amplifier, as it describes how
effectively the input
signal (variation in VGS) controls the output current ID.
OUTPUT RESISTANCE:
Definition: r_ds is the small-signal output resistance of the FET,
representing the change in drain-
source voltage VDS over the change in drain current ID.
Role: It impacts the overall output impedance and gain of the amplifier. In
MOSFETs, r_ds can be
high, so it is sometimes neglected in basic analysis.
 06
INPUT RESISTANCE:
Definition: The input resistance of the amplifier is primarily determined by
the gate resistance
RG and is very high in FETs due to the gate's insulating layer.
Role: A high input resistance minimizes loading on the previous stage,
allowing more of the
input signal to reach the gate of the FET.

OUTPUT RESISTANCE:
Definition: The voltage gain of the CS FET amplifier is given by

Role: Determines the amplification level of the input signal. The negative
sign indicates a 180° phase shift between input and output in a CS
configuration

CALCULATION:
To perform calculations in small-signal analysis of a Common-Source (CS)
FET amplifier, you typically need to determine key parameters such as
transconductance (gm), voltage gain (Av​) , input and output resistance.
Here's a step-by-step guide on how to perform these calculations, along
with example formulas:
CALCULATING TRANSCONDUCTANCE:
Transconductance (gm) is calculated using the formula:

Where:
ID​ = Drain current (A)
VGS​ = Gate-source voltage (V)
Vth​ = Threshold voltage (V)
Example Calculation:

ID​= 1mA, VGS=3 V, and Vth=1 :

07

CALCULATING VOLTAGE GAIN:

The voltage gain (Av) for a CS amplifier can be calculated as:

Where R′D is the equivalent resistance in the drain circuit, often calculated as:

Example Calculation:

Now, calculate the voltage gain:

CALCULATING INPUT RESISTANCE:

The input resistance of a CS amplifier is primarily determined by the gate resistor RGR_GRG​,
which is very high (ideally infinite for FETs), and can be approximated as:

CALCULATING OUTPUT RESISTANCE:

The output resistance can be calculated as:

Example Calculation:
 IDEAL CASE: 08
Qus. For the JFET in Fig. 2, VGS (off) = – 4V and IDSS = 12 mA. Determine
the minimum value of VDD required to put the device in the constant-
current region of operation.

Fig. 2
PRACTICAL
09
CALCULATION:

COMPARISON:
The values as observed in the two cases differ slightly. These
differences arise due to various factors like Temperature at
ideal case and different temperature at different experimental
conditions,wire resistance,etc .
APPLICATIONS:
10
Here’s a brief summary of FET amplifier configurations and their
applications:

1. Common-Source (CS) Amplifier: Used as a voltage amplifier in audio

and RF circuits due to its high gain and phase inversion. Ideal for
general signal amplification in low- to mid-frequency applications.

2. Common-Drain (CD) Amplifier (Source Follower): Acts as a buffer for

impedance matching, with high input and low output impedance.
Common in audio and signal processing applications where unity gain
and no phase shift are needed.

3. Common-Gate (CG) Amplifier: Suited for high-frequency applications

like RF and microwave circuits due to its high bandwidth and low input
impedance. Used in low noise amplifiers (LNA) and communication
systems.

Each configuration is chosen based on gain, impedance, and frequency

needs.

EXAMPLE:
Common-Source (CS) Amplifier Example:

Application: Audio Preamplifier

Description: A CS amplifier is often used in audio preamps to boost

weak audio signals from sources like microphones before sending them
to further amplification stages. It provides sufficient voltage gain to
make the signal suitable for subsequent processing with moderate input
resistance to match typical audio source impedances.