EEE 4227: Power Electronics
Introduction to Power Electronics
Contents
• Introduction to Power Electronics
• Power Electronics vs. Linear Electronics
• Power Electronic Devices
• Scopes and Applications
2
Introduction to Power Electronics
Power electronics is an enabling technology, providing the needed interface between an
electrical source and an electrical load, as depicted in the figure below. The electrical
source and the electrical load can, and often do, differ in frequency, voltage amplitudes,
and the number of phases.
The power electronics interface facilitates the transfer of power from the source to the
load by converting voltages and currents from one form to another, in which it is possible
for the source and load to reverse roles.
The controller shown in the Figure allows management of the power transfer process in
which the conversion of voltages and currents should be achieved with as high energy-
efficiency and high power density as possible.
3
Introduction to Power Electronics
Why do we need a controller/ Control parameter?
Example of Half Wave Rectification Calculate the voltage drop VDC and current IDC flowing
through a 100Ω resistor connected to a 240 Vrms
single phase half-wave rectifier as shown above. Also
calculate the average DC power consumed by the
load.
Desired output demands a control parameter as multiplication factor along with the above
regular expression of Vdc.
4
Power Electronics: History
Peter Cooper Hewitt (May 5, 1861 - August 25, 1921) was
an American electrical engineer and inventor. In 1902 Hewitt
developed the first mercury arc rectifier, which was an
efficient way of converting alternating current power to direct
current for use in electric railways, industry, and high-voltage
direct current (HVDC) power transmission.
5
Power Electronics: History
Power electronics started with the development of the mercury arc
rectifier. Invented by Peter Cooper Hewitt in 1902, it was used to convert
alternating current (AC) into direct current (DC).
In 1933 selenium rectifiers were invented.
In 1948 Shockley's invention of the bipolar junction transistor (BJT)
improved the stability and performance of transistors, and reduced costs.
By the 1950s, higher power semiconductor diodes became available and
started replacing vacuum tubes.
In 1956 the silicon controlled rectifier (SCR) was introduced by General
Electric, greatly increasing the range of power electronics applications.
By the 1960s the improved switching speed of bipolar junction
transistors had allowed for high frequency DC/DC converters. In
1976 power MOSFETs became commercially available.
In 1982 the Insulated Gate Bipolar Transistor (IGBT) was introduced.
The high-power, integrated gate-commutated thyristor (IGCT) was
introduced by ABB in 1997.
6
Power Electronics: Recent advancements
Although silicon has been the basic raw material for current power devices, wide-band gap (WBG)
materials, such as SiC, GaN, and ultimately diamond (in synthetic thin-film form), are showing great
promises. SiC devices, such as the Schottky barrier diode (1200 V/50 A), the power MOSFET (1200-V/100-
A half-bridge module), and the Junction Barrier Schottky (JBS) diode (600 V/20 A), are in market, and 25
kV IGBT has already been introduced.
Gallium nitride
7
Power Electronics: Recent advancements
Higher critical electrical field: The critical electrical field
of SiC is around 8 times higher than that of Si, which
makes SiC an excellent choice for power semiconductor
devices. A SiC semiconductor die is much thinner due to
its high dielectric strength and is doped to a much higher
level, leading to lower losses.
Higher thermal conductivity: SiC has thermal
conductivity about 3 times higher than that of silicon.
Therefore, heat dissipation by the losses can be
conducted from within the semiconductor with a much
lower temperature drop across the semiconductor
material.
WBG
Higher operating temperature: Because of its high devices
melting temperature, the SiC device can operate well over
400°C—much higher than the maximum allow-able
junction temperature of standard silicon technology
(150°C). This property results in significant cost reduction
of the cooling system since less expensive cooling
materials and methods can be used.
Higher current density: The current density of SiC is 2 to
3 times the maximum current density of silicon devices.
This property will reduce cost and will, over time, help to 8
offset some of the cost disadvantages of the SiC device.
Power Electronics: Recent advancements
Material properties of SiC and GaN in
comparison with those of silicon and diamond
SiC has higher thermal conductivity than GaN
or Si meaning that SiC devices can theoretically
operate at higher power densities than either
GaN or Si. GaN's electron mobility is higher
than SiC meaning that GaN should ultimately
be the best device for very high frequencies.
The future markets of the wide
bandgap semiconductors are shared
by GaN and SiC.
9
Power Electronics: Recent advancements
Global Power Electronics Market By Application (consumer electronics, industrial, automotive & transportation, ICT,
aerospace & Defense, and others), By Device type (power discrete, power module, and power IC), By Material (silicon
carbide, and gallium nitride), By Regional Outlook, Industry Analysis Report and Forecast, 2021 - 2027
10
Published Date: December-2021
Power Electronics vs. Linear Electronics
It is not primarily in their power handling capacities.
Linear Electronics:
It is the branch of electronics in which
we operate the devices in there active mode of
operation.
In linear electronics, we operate the transistor in
its active region which can also be called ohmic
region in which there is a relation-ship between
current and the voltage with some gain value.
This region is used in amplifiers circuits where we
want to vary the current from collector to the
emitter according to our need.
In active region, the transistor itself also draws
some power and hence causes power loss in it,
which in return decrease the efficiency of the
device.
11
Power Electronics vs. Linear Electronics
Power Electronics:
In power electronics, we deal with the cut-off and the
saturation region of the transistor. Hence the transistor
becomes a switch.
When it is in cut off region, no current flows from
collector to emitter ideally and it acts as an Off Switch.
When it is in saturation region, rated current can flow
from collector to emitter, hence act as an On Switch.
This the key difference between the mode of operation
of transistor which gives rise to a complete new field in
electronics called power electronics.
The main feature of power electronics is high efficiency
power conversion because in either On state or Off state
the power drawn by the transistor is zero (ideally), and
hence high efficient devices can be built with efficiency
as high as 96%.
12
Power Electronics vs. Linear Electronics
Ideal Switch BJT as Switch
Vce
Ic
P= Vce×Ic
13
Power Electronics vs. Linear Electronics
Comparison between Linear & Switching operations
Linear operation Switching operation
Active zone selected: Active zone avoided :
Good linearity between input/output Switching losses encountered only during
transients
Saturation & cut-off zones avoided: poor Saturation & cut-off (negative bias) zones
linearity selected: low losses
Transistor biased to operate around No concept of quiescent point
quiescent point
Common emitter, Common collector, Transistor driven directly at base - emitter
common base modes and load either on collector or emitter
14
Power Electronics vs. Linear Electronics
Example circuit Specifications: 500W DC-DC converter
Linear Electronics Solution:
Using voltage divider
Using series pass regulator
15
Power Electronics vs. Linear Electronics
Example circuit Specifications: 500W DC-DC converter
Power Electronics Solution:
16
Power Electronic Devices: Classifications
A. Switching devices
B. Triggering devices Triggering device switching device ke
control signal dibe.
Negative resistance devices are generally used to establish a more
predictable and stable trigger behavior.
Examples: UJT, PUT, Shockley diode, DIAC, SBS, Asymmetrical ac Trigger
UJT = Uni Junction Transistor
PUT = Programmable Uni Transistor 17
Power Electronics: Drivers
In any power conversion process, small
power loss is present and therefore, cost
of wasted energy along with its dissipation
as heat is important.
18
Power Electronics: Applications
19
Power Electronics: Applications
HVDC Transmission
20
Power Electronics: Key Players
Mitsubishi Electric (Japan)
Fuji Electric (Japan)
Fairchild SemiconductoR (acquired by ON Semiconductor) (USA)
Infineon (Germany)
Semikron (Germany)
ABB (Sweden)
Toshiba (Japan)
Hitachi (Japan)
Renesas Electronics (Japan)
21
Power Electronics: Key Players
22
For further queries?
[email protected]
23
