Higher Institute of Engineering and Technology

Electronics & Communication Engineering

Department

ECE 212
Electronic
Circuits 1

Dr Mohamed EL-Bouridy

[email protected]
 ECE 212
Electronic Circuits 1
Hrs /wk Grading, Tests, and Exams Hours

Credit Class
Final Final
Lecture Tutorial Lab Summery and Lab Tests
Exam Exam
HW

3 2 2 - 4
 ECE 212 : Course Contains
Chapter 1 :DC Biasing Analysis of BJT.
Chapter 2 :BJT Small Signal Analysis.
Chapter 3 :Audio Frequency Power Amplifiers.
Chapter 4 :Frequency Response of BJT Amplifiers.
Chapter 5 : Operational Amplifier .
Chapter 6:Application of Operational Amplifier.
Chapter 7: AC small signal of MOSFET.
 Chapter 1
DC Biasing Analysis of BJT
❖ Introduction.
❖ Simplified Structure and Modes of Operation.
❖Transistor α 'alpha' and β 'beta‘.
❖ Bipolar Transistor Biasing.
❖ What is Biasing Circuit?
❖ Types of Bias Circuit for Class A Amplifiers.
❖ The calculation of D.C load line and operating point
for fixed bias with emitter resistor.

1
 Chapter 1
DC Biasing Analysis of BJT

❖ The calculation of D.C load line and operating point

for collector feedback
❖ The calculation of D.C load line and operating point
for voltage divider bias.
❖ Voltage divider with AC bypass capacitor.
❖ Emitter bias with emitter resistance.
❖ Types of Coupling.

2
 Chapter 1
DC Biasing Analysis of BJT
Introduction :

❖ A bipolar junction transistor (BJT) is a type of

transistor that relies on the contact of two types
of semiconductor(N-type, and P-type).
❖ BJTs can be used as amplifiers, switches, or an
oscillators.
❖ BJTs can be found either as individual discrete
components, or in large numbers as parts of
integrated circuits.
3
 Chapter 1
DC Biasing Analysis of BJT
Introduction :
❖ Charge flow in a BJT is due to bidirectional
diffusion of charge carriers across a junction
between two regions of different charge
concentrations. The regions of a BJT are called
emitter, collector, and base.
❖ Small changes in the voltage applied across the
base–emitter terminals causes the current that
flows between the emitter and the collector to
change significantly.
4
 Chapter 1
DC Biasing Analysis of BJT

Introduction :
❖ Early transistors were made from germanium
but most modern BJTs are made from silicon. A
significant minority are also now made from
gallium arsenide, especially for very high speed
applications (HBT).
❖ BJTs come in two types, or polarities, known as
PNP and NPN

5
 Chapter 1
DC Biasing Analysis of BJT.
Simplified Structure and Modes of Operation :

6
 Chapter 1
DC Biasing Analysis of BJT.
Simplified Structure and Modes of Operation :

The operation of the NPN BJT may be explained

by considering the transistor as consisting of two
back-to-back pn junctions.
❖ The base-emitter (BE) junction
acts very much as a diode when
it is forward-biased.
❖ Note that the electron current
has been shown larger than the
hole current.
7
 Chapter 1
DC Biasing Analysis of BJT.
Simplified Structure and Modes of Operation :
❖ The reverse-biasing the base-collector (BC) junction.
❖ the electrons “emitted” by the
emitter with the BE junction
forward-biased reach the very
narrow base region, and after a
few are lost to recombination in
the base, most of these electrons
are “collected” by the collector.
IE = IB + IC
8
 Chapter 1
DC Biasing Analysis of BJT.
Simplified Structure and Modes of Operation :
❖ The reverse-biasing the base-collector (BC) junction.
IE = IB + I C
IC = β IB
Where β is a current (gain) amplification factor
Typical values of β range from 20 to 200.

9
 Chapter 1
DC Biasing Analysis of BJT.
Definition of BJT Voltages and Currents.

10
 Chapter 1
DC Biasing Analysis of BJT.
Ideal Test Circuit to Determine I–V Characteristic
of a BJT. .

11
 Chapter 1
DC Biasing Analysis of BJT.
The cutoff region, where both (BE, CB)
junctions are reverse-biased, the base current
is very small, and essentially no collector
current flows.

The active linear region, in which the

transistor can act as a linear amplifier, where
the BE junction is forward-biased and the CB
junction is reverse-biased.

The saturation region, in which both (BE, CB) junctions are forward-
biased.

12
 Chapter 1
DC Biasing Analysis of BJT.
Transistor α 'alpha' and β 'beta'

α : is the current gain for common base.

α = IC / IE

β : is the current gain for common emitter .

β = IC / IB
IE = IC + I B = β IB + IB

IE = (β + 1) IB ≈ IC for β <<
13
 Chapter 1
DC Biasing Analysis of BJT.
Transistor α 'alpha' and β 'beta'

Β = ICQ / IBQ
Β = Δ iC / Δ iB
at vce = constant

The magnitudes of βac and βdc differ,

typically by approximately 10% to 20%.
14
 Chapter 1
DC Biasing Analysis of BJT.
Bipolar Transistor Biasing
❖ The operating point of a device, also known as bias
point, quiescent point, or Q-point.
❖ The analysis or design of a transistor amplifier
requires knowledge of both the dc and ac response of
the system.

15
 Chapter 1
DC Biasing Analysis of BJT.
Purpose of the DC Biasing Circuit
1- To turn the device “ON”
2- To place it in operation in the region of its
characteristic where the device operates most linearly.
3- Proper biasing circuit which it operate in linear
region and circuit have centered Q-point or midpoint
biased
4- Improper biasing cause :
a) Distortion in the output signal
b) Produce limited or clipped at output signal

16
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:

1) Fixed bias
2) Fixed bias with emitter resistor
3) Collector-to-base bias
4) Voltage divider bias
5) Emitter bias

17
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
1) Fixed bias (Base Bias) common emitter (CE)
1st step: Locate capacitors and replace them with an
open circuit
2nd step: Locate 2 main loops which;
1- BE loop (input loop)
2- CE loop (output loop)

18
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
1) Fixed bias (Base Bias) common emitter (CE)
1st step:

19
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
1) Fixed bias (Base Bias) common emitter (CE)
2nd step:

20
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
1) Fixed bias (Base Bias) common emitter (CE)
2nd step:

21
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
1) Fixed bias (Base Bias) common emitter (CE)
2nd step:

VCC = ICRC + VCE (1.1)

VCE = VCC - ICRC (1.2) Fixed-Bias Load Line.
22
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
1) Fixed bias (Base Bias) common emitter (CE)
As a brief review of single- and double-subscript
notation recall that
since VE = 0 V

In addition, since

And VE = 0 V, then

23
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
1) Fixed bias (Base Bias) common emitter (CE)
We can calculate the operating point from theBE Loop Analysis
VCC = IBRB + VBE (1.3)
IB = (VCC – VBE)/RB (1.4)
If IC = α IE, α ≤ 1, then, IC ≈ IE, IC = β IB,
so that, IE =IC = β IB (1.5)
IBQ = (VCC – VBE)/ RB
ICQ = β IBQ (1.6)
V =V –I R
CEQ CC CQ C (1.7)
The common-emitter current gain of a transistor is an important
parameter in circuit design, and is specified on the data sheet for a
particular transistor. It is denoted as β on this page. 24
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
1) Fixed bias (Base Bias) common emitter (CE)
Circuit Values Affect the Q-Point

25
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
2) Fixed bias (Base Bias) common emitter (CE)
with Emitter Resistor

This resistor introduces negative feedback that stabilizes

(improve stability) the Q-point.
26
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
2) Fixed bias (Base Bias) common emitter (CE)
with Emitter Resistor
1st step:

27
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
2) Fixed bias (Base Bias) common emitter (CE)
with Emitter Resistor
2 nd step:

28
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
2) Fixed bias (Base Bias) common emitter (CE)
with Emitter Resistor
2 nd step:

VCC = ICRC + VCE + IERE (1.8)

Assume, IC = IE
VCC = VCE + IC (RC+RE)

VCE = VCC - IC (RC+RE) (1.9)

29
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
2) Fixed bias (Base Bias) common emitter (CE)
with Emitter Resistor
2 nd step:
The single-subscript voltage VE is the voltage from
emitter to ground and is determined by

While the voltage from collector to ground can be

determined from

30
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
2) Fixed bias (Base Bias) common emitter (CE)
with Emitter Resistor
calculating the operating point from the BE Loop
VCC = IBRB + VBE + IERE (1.10)
IE = (β + 1) IB
VCC = IBRB + VBE + (β + 1) IB RE
IBQ = (VCC – VBE) / [RB + (β + 1) RE] (1.11)
ICQ = IBQ β
Sub. From equation (1.11) in equation
(1.9), we get,
VCEQ = VCC - ICQ (RC+RE)
31
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
2) Fixed bias (Base Bias) common emitter (CE)
with Emitter Resistor
The way feedback controls the bias point is as follows. If VBE is held
constant and temperature increases, emitter current increases.
VCEQ = VCC - ICQ (RC+RE)
However, a larger IE increases the emitter voltage VE = IERE, which in
turn reduces the voltage VRB across the base resistor. A lower base-
resistor voltage drop reduces the base current, which results in less
collector current because IC = β IB. Collector current and emitter
current are related by IC = α IE with α ≈ 1, so increase in emitter
current with temperature is opposed, and operating point is kept
stable.

32
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
2) Fixed bias (Base Bias) common emitter (CE)
with Emitter Resistor
Similarly, if the transistor is replaced by another, there may be a
change in IC (corresponding to change in β-value, for example). By
VCEQ = VCC - ICQ (RC+RE)
similar process as above, the change is negated and operating point
kept stable. The circuit has the tendency to stabilize operating point
against changes in temperature and β-value. In this circuit, to keep IC
independent of β the following condition must be met:
ICQ = β (VCC – VBE) / [RB+ β RE] ≈ (VCC – VBE)/ RE If β RE >> RB

33
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
2) Fixed bias (Base Bias) common emitter (CE)
with Emitter Resistor
As β-value is fixed for a given transistor, this relation can be satisfied
either by keeping RE very large or making RB very low. If RE is of
large value, high VCC is necessary. This increases cost as well as
precautions necessary Vwhile
CEQ =handling.
VCC - ICQ (RC+RE)
If RB is low, a separateVlow
CEQ = VCC - ICQ (RC+RE)
voltage supply should be used in the base
circuit. Using two supplies of different voltages is impractical. In
addition to the above RE cause's ac feedback which reduces the
voltage gain of the amplifier.
The feedback also increases the input impedance of the amplifier
when seen from the base, which can be advantageous. Due to the
above disadvantages, this type of biasing circuit is used only with
careful consideration of the trade-offs involved. 34
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
2) Collector-to-Base Bias (Collector Feedback)
Another way to improve the stability of a bias circuit is to add a
feedback path from collector to base. In this bias circuit the
Q-point is only slightly dependent on the transistor beta, β.
VCEQ = VCC - ICQ (RC+RE)
In this form of biasing, the
base resistor RB is connected
to the collector instead of
connecting it to the DC
source (VCC).

35
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
2) Collector-to-Base Bias (Collector Feedback)
CE Loop Analysis:
VCC = IERE +VCE +I'CRC
Where IB << IC
I'C = IC +IB ≈ IC and, IC = β IB, and,
IE ≈ IC (1.12) Then,
VCC = IC (RC +RE) + VCE
Solving for VCE
VCE = VCC – IC (RC + RE) (1.13)
When VCE = 0,
ICsat = VCC/ (RC + RE), and
VCEoff = VCC at IC = 0 36
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
3) Collector-to-Base Bias (Collector Feedback)
BE Loop Analysis :
VCC = I’C RC +IBRB +VBE +IERE
From equation (1.12), the loop equation becomes:

VCC = IB (β RC + β RE + RB) + VBE

Solving for IBQ
IBQ = (VCC – VBE) / [β (RC + RE) + RB]
ICQ = β IBQ (1.14)
Sub. From equation (1.14) in equation (1.13), we can get:
VCEQ = VCC – ICQ (RC + RE)
37
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
3) Collector-to-Base Bias (Collector Feedback)
If VBE is held constant and temperature increases, then the collector
current IC increases. However, a larger IC causes the voltage drop
across resistor RC to increase, which in turn reduces the voltage VRB
across the base resistor RB. A lower base-resistor voltage drop
reduces the base current (IB), which results in fewer collectors
current (IC). Because an increase in collector current with
temperature is opposed, the operating point is kept stable.
Circuit stabilizes the operating point against variations in
temperature and β (i.e. replacement of transistor). In this circuit, to
keep IC independent of β, the following condition must be met:
ICQ = β (VCC – VBE)/ (β (RC + RE) + RB) ≈ (VCC – VBE)/ RC
Which is the case when β RC >> RB 38
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
3) Collector-to-Base Bias (Collector Feedback)
As β value is fixed (and generally unknown) for a given transistor, this
relation can be satisfied either by keeping RC fairly large or making RB
very low. If RC is large, a high VCC is necessary, which increases cost as
well as precautions necessary while handling.
If RB is low, the reverse bias of the collector–base region is small, which
limits the range of collector voltage swing that leaves the transistor in
active mode. The resistor RB causes an AC feedback, reducing the
voltage gain of the amplifier. This undesirable effect is a trade-off for
greater Q-point stability.
The feedback also decreases the input impedance of the amplifier as
seen from the base, which can be advantageous. Due to the gain
reduction from feedback, this biasing form is used only when the trade-
off for stability is warranted. 39
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
4) Voltage Divider Biasing
The voltage divider is formed using external resistors R1 and R2

40
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
4) Voltage Divider Biasing

RTh: The voltage source is replaced by a short-circuit equivalent as

shown in Fig

(1.15)

41
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
4) Voltage Divider Biasing
ETh: The voltage source VCC is returned to the network and the open-
circuit of Fig. determined as follows:

Applying the voltage-divider rule:

(1.16)

42
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
4) Voltage Divider Biasing
The simplified circuit using Thevenin Theorem

43
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
4) Voltage Divider Biasing
The 2 main loops

44
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
4) Voltage Divider Biasing
We can found the two point of D.C load line from the CE Loop Analysis

VCC = ICRC + VCE + IERE

Assume: IE ≈ IC Therefore:

VCE = VCC – IC (RC + RE) (1.17)

When VCE = 0, ICsat = VCC/ (RC + RE), and

VCEoff = VCC, at IC = 0

45
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
4) Voltage Divider Biasing
We can calculate the operating point from the BE Loop
VTH = IBRTH + VBE + IERE
IE = (1+ β) IB
VTH = IB [RTH + (1+ β) RE] + VBE

IBQ = (VTH - VBE) / [RTH + (1+ β) RE]

ICQ = β IBQ (1.18)

Sub. From equation (1.18) in equation (1.17), we get
VCEQ = VCC – ICQ (RC + RE)
46
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
4) Voltage Divider Biasing

Unlike above circuits, only one dc supply is necessary. Operating

point is almost independent of β variation. Operating point stabilized
against shift in temperature.

In this circuit, to keep IC independent of β the following condition

must be met:

ICQ = β (VTH - VBE) / (RTH + β RE) ≈ (VTH - VBE) / RE If β RE >> RTH

47
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
4) Voltage Divider Biasing
As β-value is fixed for a given transistor, this relation can be satisfied
either by keeping RE fairly large or making R1||R2 very low. If RE is of
large value, high VCC is necessary. This increases cost as well as
precautions necessary while handling.
If R1 || R2 is low, either R1 is low, or R2 is low, or both are low. A low R1
raises VB closer to VC, reducing the available swing in collector
voltage, and limiting how large RC can be made without driving the
transistor out of active mode. A low R2 lowers VBE, reducing the
allowed collector current. Lowering both resistor values draws more
current from the power supply and lowers the input resistance of the
amplifier as seen from the base.
48
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
Voltage divider with AC bypass capacitor
The standard voltage divider circuit discussed above faces a
drawback - AC feedback caused by resistor RE reduces the gain.
This can be avoided by placing a capacitor (CE) in parallel with RE,

49
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
Voltage divider with AC bypass capacitor
the gain for the amplifier without bypassing the emitter resistor is
given by: AV = - RC / (re + RE)
Maximum gain is obviously available where RE is 0Ω.
At low frequencies, with the bypass capacitor CE in its
“open circuit” equivalent state, all of RE appears in the
gain equation above, resulting in minimum gain.
As the frequency increases, the reactance of the capacitor CE will
decrease, reducing the parallel impedance of RE and CE until the
resistor RE is effectively shorted out by CE.
The result is a maximum or midband gain determined by AV = - RC / re.
50
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
5) Emitter Bias

We know that,
IBQ = (VEE – VBE)/RB
ICQ = β IBQ
VCEQ =VEE - IC RC

51
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
5) Emitter bias with emitter resistance
IBQ = (VEE – VBE) / [RB + (β +1) IB RE]
Where,
IE = (β +1) IB
IEQ = (β +1) IBQ
VEQ = VEE - IEQ RE
The operating point (IEQ) is
independent of β if RE >> RB/β

Good stability of operating point similar to voltage divider bias. This

type can only be used when a split (dual) power supply is available.
52
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
6) Types of Coupling

capacitive coupling : The coupling capacitor

transmits the amplified ac voltage to the next
stage.

transformer coupling : Here the ac voltage

is coupled through a transformer to the next
stage.

Capacitive coupling and transformer coupling are both examples of

ac coupling, which blocks the dc voltage.
53
 Chapter 1
DC Biasing Analysis of BJT.
Types of Bias Circuit for Class A Amplifiers:
6) Types of Coupling

Direct coupling : It is different

there is a direct connection between the
collector of the first transistor and the
base of the second transistor.

both the dc and the ac voltages are coupled. Since there is no lower
frequency limit, a direct-coupled amplifier is sometimes
called a dc amplifier.

54
The
End