Review Questions
No Full-name ID card Tel. Notes
1 Huỳnh Thị Thanh Tuyền QE170226 0329695375 Leader 5.6; 5.7; 5.8; 5.9
2 Nguyễn Thị Vân Thư QE170203 0849656469 5.3,5.4,5.5
3 Nguyễn Xuân Quý QE170239 0398973408 5.1, 5.2, 5.10, 5.11
4 Huỳnh Lê Trung QE170130 0775631269
5 Lê Đồng Tâm QE170103 0982799480 Decorate team exercise
5.1 What are the key properties of semiconductor memory?
→ They exhibit two stable states, which can be represented by 0 or 1, they are capable of
being written into to set the state, and they can be read to sense the state.
5.2 What are two interpretations of the term random-access memory?
→ It is memory that is volatile, and it can be data can be read from and
written to it easily and rapidly.
5.3 What is the difference between DRAM and SRAM in terms of application?
→
- SRAM is used for cache memory.
- DRAM is used for main memory.
5.4 What is the difference between DRAM and SRAM in terms of
characteristics such as speed, size, and cost?
→
- Speed: SRAM is faster.
- Size: SRAM takes more space, DRAM is denser.
- Cost: SRAM is more expensive than DRAM
5.5 Explain why one type of RAM is considered to be analog and the other
digital.
→
- DRAM: analog device because it stores charge and uses a
threshold to determine the binary value.
- SRAM: digital because it uses flip-flop logic gates
5.6 What are some applications for ROM?
→ ROM is used to store firmware software. ROM is also used to update the
firmware software of the computer. ROM is also used in electronic devices such
as keypad mobile phones, children's handheld games, VCRs, DVDs, and digital
watches.
5.7 What are the differences among EPROM, EEPROM, and flash memory?
● EPROM is read and written electrically; before a write operation, all the
storage cells must be erased to the same initial state by exposure of the
packaged chip to ultraviolet radiation. Erasure is performed by shining an
intense ultraviolet light through a window that is designed into the
memory chip.
● EEPROM is a read- mostly memory that can be written into at any time
without erasing prior contents; only the byte or bytes addressed are
updated.
● Flash memory is intermediate between EPROM and EEPROM in both
cost and functionality. Like EEPROM, flash memory uses an electrical
erasing technology. An entire flash memory can be erased in one or a few
seconds, which is much faster than EPROM. In addition, it is possible to
erase just blocks of memory rather than an entire chip. However, flash
memory does not provide byte-level erasure. Like EPROM, flash
memory uses only one transistor per bit, and so achieves the high density
(compared with EEPROM) of EPROM.
5.8 Explain the function of each pin in Figure 5.4b.
5.9 What is a parity bit?
→ A parity bit is a check bit, which is added to a block of data for error
detection purposes. It is used to validate the integrity of the data. The value of
the parity bit is assigned either 0 or 1 that makes the number of 1s in the
message block either even or odd depending upon the type of parity. Parity
check is suitable for single bit error detection only.
5.10 How is the syndrome for the Hamming code interpreted?
→ If the syndrome contains all 0s, no error has been detected. If the
syndrome contains one and only one bit set to 1, then an error has
occurred in one of the 4-check bits, and no correction is necessary. If
the syndrome contains more than one bit set to 1, then the numerical
value of the syndrome indicates the position of the data bit in error.
That bit is inverted for correction.
5.11 How does SDRAM differ from ordinary DRAM?
→ SDRAM is synchronized to an external clock signal and running at
the full speed of the processor/memory bus without imposing wait
states. DRAM is asynchronous.
