ZXTP2012Z
60V PNP LOW SATURATION TRANSISTOR IN SOT89
Features Mechanical Data
BVCEO > -60V Package: SOT89
IC = -4.3A High Continuous Current Package Material: Molded Plastic. “Green” Molding Compound.
RSAT = 32mΩ for a Low Equivalent On-Resistance UL Flammability Rating 94V-0
Low Saturation Voltage VCE(sat) < -65mV @ IC = -1A Moisture Sensitivity: Level 1 per J-STD-020
hFE Specified Up to -10A for High Current Gain Hold Up Terminals: Finish—Matte Tin Plated Leads, Solderable per
Complementary NPN Type: DIODES™ ZXTN2010Z MIL-STD-202, Method 208
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.05 grams (Approximate)
Halogen and Antimony Free. “Green” Device (Note 3)
An Automotive-Compliant Part is Available Under Separate
Datasheet (ZXTP2012ZQ)
Application
Emergency Lighting Circuits
Motor Driving (Including DC Fans)
Backlight Inverters
Power Switches
Gate Driving MOSFETs and IGBTs
SOT89
C
E
B C C
B
E
Top View
Top View Device Symbol Pin Out
Ordering Information (Note 4)
Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel
ZXTP2012ZTA 951 7 12 1,000
ZXTP2012Z-13R 951 13 12 4,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/
Marking Information
951 951 = Product Type Marking Code
ZXTP2012Z 1 of 7 January 2023
Document number: DS33713 Rev. 6 - 2 www.diodes.com © 2023 Copyright Diodes Incorporated. All Rights Reserved
ZXTP2012Z
Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -7 V
Base Current IB -2 A
Continuous Collector Current IC -4.3 A
Peak Pulse Current ICM -15 A
Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) 1 W
PD
Linear Derating Factor 8 mW/°C
Power Dissipation (Note 6) 1.5 W
PD
Linear Derating Factor 12 mW/°C
Power Dissipation (Note 7) 2.1 W
PD
Linear Derating Factor 16.8 mW/°C
Thermal Resistance, Junction to Ambient (Note 5) RθJA 125 °C/W
Thermal Resistance, Junction to Ambient (Note 6) RθJA 83 °C/W
Thermal Resistance, Junction to Ambient (Note 7) RθJA 60 °C/W
Thermal Resistance, Junction to Case (Note 5) RθJC 21 °C/W
Thermal Resistance, Junction to Leads (Note 8) RθJL 3.23 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 5. Minimum recommended pad layout
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR -4 PCB with high coverage of single sided 1oz copper, in still air conditions; device
measured when operating in steady state condition.
7. Same as note (6), except the device is mounted on 50mm x 50mm single sided 1oz weight copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
ZXTP2012Z 2 of 7 January 2023
Document number: DS33713 Rev. 6 - 2 www.diodes.com © 2023 Copyright Diodes Incorporated. All Rights Reserved
ZXTP2012Z
Thermal Characteristics and Derating Information
Max Power Dissipation (W)
-IC Collector Current (A)
VCE(sat)
2.0
10 Limit
50X50mm PCB
1oz copper
1.5
1 DC
1s 1.0
100ms 25X25mm PCB
100m 10ms 1oz copper
0.5
Single Pulse. T =25 C
o 1ms
A
25X25mm PCB 1oz copper 100s
10m 0.0
100m 1 10 100 0 20 40 60 80 100 120 140 160
o
-VCE Collector-Emitter Voltage (V) Temperature ( C)
Safe Operating Area Derating Curve
Thermal Resistance ( C/W)
80 Max Power Dissipation (W)
25X25mm PCB 1oz copper
o
100 Single Pulse. TA=25 C
o
60 25X25mm PCB 1oz copper
D=0.5
40
10
D=0.2 Single Pulse
20
D=0.05
D=0.1
0 1
100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s) Pulse Width (s)
Transient Thermal Impedance Pulse Power Dissipation
ZXTP2012Z 3 of 7 January 2023
Document number: DS33713 Rev. 6 - 2 www.diodes.com © 2023 Copyright Diodes Incorporated. All Rights Reserved
ZXTP2012Z
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -100 -120 — V IC = -100µA
Collector-Emitter Breakdown Voltage (Note 9) BVCER -100 -120 — V IC = -1µA, RB ≤ 1kΩ
Collector-Emitter Breakdown Voltage (Note 9) BVCEO -60 -80 — V IC = -10mA
Emitter-Base Breakdown Voltage BVEBO -7 -8.1 — V IE = -100µA
-1 -20 nA VCB = -80V
Collector Cutoff Current ICBO —
— -500 nA VCB = -80V, TA = +100°C
ICER -1 -20 nA VCB = -80V
Collector Cutoff Current —
R ≤ 1kΩ — -500 nA VCB = -80V, TA = +100°C
Emitter Cutoff Current IEBO — -1 -10 nA VEB = -6V
100 250 — IC = -10mA, VCE = -1V
100 200 300 IC = -2A, VCE = -1V
DC Current Transfer Static Ratio (Note 9) hFE —
45 90 — IC = -5A, VCE = -1V
10 25 — IC = -10A, VCE = -1V
-14 -20 IC = -100mA, I B = -10mA
-50 -65 IC = -1A, IB = -100mA
Collector-Emitter Saturation Voltage (Note 9) VCE(sat) — mV
-75 -110 IC = -2A, IB = -200mA
-160 -215 IC = -5A, IB = -500mA
Base-Emitter Saturation Voltage (Note 9) VBE(sat) — -950 -1050 mV IC = -5A, IB = -500mA
Base-Emitter Turn-on Voltage (Note 9) VBE(on) — -840 -950 mV IC = -5A, VCE = -1V
IC = -100mA, VCE = -10V,
Transitional Frequency (Note 9) fT — 120 — MHz
f = 50MHz
Output Capacitance Cobo — 48 — pF VCB = -10V, f = 1MHz
ton — 39 — VCC = -10V, IC = -1A,
Switching Time ns
toff — 370 — IB1 = -I B2 = -100mA
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
ZXTP2012Z 4 of 7 January 2023
Document number: DS33713 Rev. 6 - 2 www.diodes.com © 2023 Copyright Diodes Incorporated. All Rights Reserved
ZXTP2012Z
Typical Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
ZXTP2012Z 5 of 7 January 2023
Document number: DS33713 Rev. 6 - 2 www.diodes.com © 2023 Copyright Diodes Incorporated. All Rights Reserved
ZXTP2012Z
Package Outline Dimension
Please see https://www.diodes.com/design/support/packaging/ for the latest version.
SOT89
D1
0
.20 c
R0
SOT89
H Dim Min Max Typ
E
A 1.40 1.60 1.50
B 0.50 0.62 0.56
B1 0.42 0.54 0.48
c 0.35 0.43 0.38
B1 L
D 4.40 4.60 4.50
B
D1 1.62 1.83 1.733
e D2 1.61 1.81 1.71
D2 E 2.40 2.60 2.50
TOP VIEW
E2 2.05 2.35 2.20
e - - 1.50
8°
(4X H 3.95 4.25 4.10
)
H1
H1 2.63 2.93 2.78
E2 L 0.90 1.20 1.05
A L1 0.327 0.527 0.427
z 0.20 0.40 0.30
L1 All Dimensions in mm
D z
BOTTOM VIEW
Suggested Pad Layout
Please see https://www.diodes.com/design/support/packaging/ for the latest version.
SOT89
X2
Value
Dimensions
(in mm)
Y3 C 1.500
Y1 G 0.244
X 0.580
Y4 X G X1 0.760
X2 1.933
Y 1.730
Y Y2
Y1 3.030
Y2 1.500
Y3 0.770
X1 Y4 4.530
ZXTP2012Z 6 of 7 January 2023
Document number: DS33713 Rev. 6 - 2 www.diodes.com © 2023 Copyright Diodes Incorporated. All Rights Reserved
ZXTP2012Z
IMPORTANT NOTICE
1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH
REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
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RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’
products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications,
(c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and
functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control
techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associ ated with their
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3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein wi ll assume all risks and liabilities associated with such
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(https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
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conditions/important-notice
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© 2023 Diodes Incorporated. All Rights Reserved.
www.diodes.com
ZXTP2012Z 7 of 7 January 2023
Document number: DS33713 Rev. 6 - 2 www.diodes.com © 2023 Copyright Diodes Incorporated. All Rights Reserved
