Experiment 1 Instructor’s Manual

American International University- Bangladesh

Department of Electrical and Electronic Engineering
EEE 4214: Industrial Electronics Laboratory

Title: Study the characteristics of Silicon Controlled Rectifier (SCR)

Abstract:
This lab session is subjected to make the students understand the I-V characteristics of SCR
and different modes of operation. Determination of the latching current, holding current,
forward break-over voltage and the control functions of the gate terminal are also the primary
objectives of this experiment.

Introduction:

Silicon Controlled Rectifier (SCR) is a three terminal, three junctions, 4-layer, p-n-p-n
semiconductor device that allows the current to flow in one direction only. It is the member
of the thyristor family.

Structure:

Fig 1(a): Internal Fig 1(b): Symbol of Fig 1(c): Pin configuration of SCR
construction of SCR SCR

Application of the SCR:

SCR

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Theory:

I-V Characteristics of SCR:

I-V characteristic is the plot, which shows the variation of anode current w.r.t. anode voltage
at different biasing condition.

Reverse characteristics: Small leakage current called reverse blocking current flows when the
SCR is reversed biased (anode is negative w.r.t. cathode). At peak reverse voltage, reverse
current increases sharply. This is called reverse break over or reverse avalanche region.

Forward Characteristics: Small Forward leakage current flows when SCR is forward biased
(anode is positive w.r.t. cathode) and anode voltage is less than forward break over voltage.
When Anode current exceeds latching current, SCR switches ON. Anode current increases
sharply and anode voltage drops. The gate current controls the forward break over voltage.

Fig 2: I-V characteristics of SCR

Forward break over voltage (VFBO):

It is the forward anode voltage at which SCR switches ON and begins to conduct, when gate
current is zero. SCR is in the Forward Blocking Region when the forward anode voltage is
less than VFBO and little forward leakage current flows through SCR.

Fig 3: Concept Structure of VFBO when Ig =0

Gate control:

The gate terminal controls the forward break over voltage and hence the forward bias level at
which the SCR is turned ON. The higher the value of the gate current, the lower is the anode
voltage requires turning SCR ON. Once the SCR is turned ON, gate loses control and its
removal does not affect the conduction of the SCR. The anode voltage and the external load
then determine the anode current, solely.

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 Fig 4: Concept Structure of VFBO when Ig ≠0

Latching Current (IL):

Latching current is the forward anode current requires turning SCR ON. SCR remains OFF as
long as the anode current is less than the latching current.

Fig 5: Concept Structure of latching current

Holding current (IH):

The holding current is the minimum current which must pass through the SCR in order for it
to remain in the 'ON' state.

IA<IH

IA>IH
Fig 6: Concept Structure of Holding current

Pre-lab Homework: Students should follow the theory class and lab manual before coming
to lab.

Apparatus:
i. SCR (TYN 612) iv. Voltmeter (0-50V)
ii. Resistances (470 Ω, 470 Ω, 100 Ω) v. Ammeter (0-10mA)
iii. LED vi. Ammeter (0-30mA)

Precaution:
1. The circuit setup contains 220 V. Students should be cautious about this.
2. Instead of continuous gate connection, +ve gate pulse should be used. Because if the
gate pulse is kept continuous, the SCR will be overheated.

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Circuit Diagram:

Fig 7: complete experimental setup

Experimental Procedure:
To observe the terminal configuration of a thyristor, thyristor's body is generally
connected with anode terminal by the manufacture; hence, the anode terminal can be
identified with help of a multi-meter. Now, measure the resistance between other two
terminals (gate and cathode) of the thyristor. The forward-biased p-n junction of a diode
shows a low resistance than the reverse biased junction. When the AVO meter shows a low
resistance then the gate (G) terminal is the one, which connected with positive terminal of the
multi-meter battery. Connect the circuit shown in fig 7 and follow the steps below.

1. Apply the 0-30 V across the anode and cathode terminals through 570Ω (470Ω
+100Ω) resistor. The device must be on the off state with open gate.

2. Increase the gate supply voltage gradually until the thyristor turn on. Record the
minimum gate current (Ig, min) required turning on the thyristor.

3. Set the source voltage to zero volts. Adjust the gate voltage to a slightly higher value
than what is found in the step (2). Keep the gate voltage constant over the experiment.
Increase gradually the source voltage (in steps) so that the anode current (IA)
increased in steps. Just apply a +ve click (~4V) to the gate terminal after each step.
Never keep the gate terminal connected to the voltage supply. If the connection
remains continuous then SCR will be overheated. If anode current is greater than the
latching current (IL) of the device, then the device stay on even after the gate terminal
is opened.

4. Increase the anode current from the latching current level by increasing slightly the
supply voltage. Open the gate terminal. Now start reducing the anode current
gradually by adjusting the voltage source until the thyristor goes into blocking mode.
The anode current at this instant called holding current (IH).

5. For a particular gate current, increase the source voltage gradually from zero to 30
volts. Repeat the step (3) but this time does it for completing table 1. Take at least 8
discrete sets of value to draw the I-V characteristic curve of SCR. Do the step (5)
again for another gate current (Ig).

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 6. Connect the circuit shown in Figure above. Use the oscilloscope in the X-Y mode,
and then connect the point A to channel I and point B to channel II. Draw the wave-
shapes appear on the oscilloscope screen. These wave shapes represent the I-V
characteristics.

Simulation and Measurement: (Simulations are done using PSIM v9.1.1)

Fig 8: Circuit setup using PSIM v9.1.1

Part A: Determination of I-V characteristic curve of SCR

Data Table 1: Anode current on different anode voltage

Anode Voltage, Anode Current,

Vin (V)
VAK (V) IAK (mA)
0 0 0
1 0.99995 0.0001
2 1.9999 0.0002
3 2.99985 0.0003
4 3.9998 0.0004
5 4.99975 0.0005
6 5.9997 0.0006
7 1.41411 11.172
8 1.41413 13.172
9 1.41415 15.172
10 1.41417 17.12
12 1.41421 21.172
14 1.41425 25.171
16 1.41429 29.171
18 1.41433 33.2171
20 1.41437 37.171

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Plotting of I-V Characteristics:

I-V Characteristic Curve of SCR

40
35
Anode Current (mA)
30
25
20
15
10
5
0
-5 0 1 2 3 4 5 6 7
Anode to Cathode Voltage (V)

Fig 9: I-V characteristics of SCR

Result:

A. Latching current, IL = 10 mA
B. Holding current, IH = 10 mA
C. Break over voltage, VBO= 5.9997 volts

Part B: Verification of latch current to turn the SCR on corresponding to fig 9

R = 1.5 K Ohm
Vin = 10 V
IL = 6.667 mA < Ilatch = 10 mA (Set in PSIM BY double clicking on SCR)
So, SCR will be failed during turn ON

Fig 10: Waveforms to show the failure of SCR turn ON process

Fig.10 shows the failure of SCR during application of gate pulse. The latch current has been
set as10 mA. The load resistance is 1.5 K Ohm and the supply is 10 V. It is visible from the
waveforms that, the SCR cannot conduct properly due to less load current (6.667 mA) than

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latch current (10 mA). At low (0) gate pulse the voltage across the SCR is 10 V (exactly
equal to Vin) and the load voltage is 0 V.

R = 500 Ohm
Vin = 10 V; VAK = 1.414 V (Set in PSIM BY double clicking on SCR)
IL = 17.172 mA > Ilatch = 10 mA (Set in PSIM BY double clicking on SCR)
So, SCR will be turned ON

Fig 11: Waveforms to show the SCR turn ON process

Fig.11 shows the successful turn ON process of SCR during application of gate pulse. The
latch current has been set as 10 mA. The load resistance is 500 Ohm and the supply is 10 V.
It is visible from the waveforms that, the SCR conduct properly due to higher load current
(17.172 mA) than latch current (10 mA). Removal of gate pulse from SCR just after entering
conduction region cannot turn OFF the SCR. This is visible in the Fig.11 under low (0) gate
pulse condition.

Discussion:

The Data table 1 is filled with the values from the simulation setup in PSIM v9.1.1. This table
is used to draw the I-V characteristics of SCR and from that we can note Holding current,
Latching Current and Forward break-over voltage. Experimental and simulation circuits have
different setups to exploit different characteristics and data.

Conclusion:

The IV-characteristics of SCR is understood both from experimental and simulation setups.
Determination of the latching current, holding current and the control functions of the gate
terminal is noted from the I-V characteristic curve. Thus, the role of SCR in Power
electronics is hence understood.

References:

1. SCR characteristics Trainer Manual NV6530; NUIS Technologies Pvt. Ltd.,

Pardeshipura, Indore- India, <available at: www.nvistech.com>
2. “Introduction to Power electronics”. Dr. Robert Erickson, University of Colorado
Boulder and University of Colorado System.

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