SWITCHING LIMITS

1. Second Breakdown
It is a destructive phenomenon that results from the current flow to a small portion of
the base, producing localized hot spots. If the energy in these hot spots is sufficient the
excessive localized heating may damage the transistor. Thus secondary breakdown is caused
by a localized thermal runaway. The SB occurs at certain combinations of voltage, current
and time. Since time is involved, the secondary breakdown is basically an energy dependent
phenomenon.
2. Forward Biased Safe Operating Area FBSOA
During turn-on and on-state conditions, the average junction temperature and second
breakdown limit the power handling capability of a transistor. The manufacturer usually
provides the FBSOA curves under specified test conditions. FBSOA indicates the I c Vce
limits of the transistor and for reliable operation the transistor must not be subjected to
greater power dissipation than that shown by the FBSOA curve.

The dc FBSOA is shown as shaded area and the expansion of the area for pulsed
operation of the BJT with shorter switching times which leads to larger FBSOA. The second
break down boundary represents the maximum permissible combinations of voltage and
current without getting into the region of ic vce plane where second breakdown may occur.
The final portion of the boundary of the FBSOA is breakdown voltage limit BVCEO .

3. Reverse Biased Safe Operating Area RBSOA

During turn-off, a high current and high voltage must be sustained by the transistor, in
most cases with the base-emitter junction reverse biased. The collector emitter voltage must
be held to a safe level at or below a specified value of collector current. The manufacturer
provide
 I c Vce limits during reverse-biased turn off as reverse biased safe area (RBSOA).

iC

ICM

VBE(off)<0

VBE(off)=0
vCE
BVCEO
BVCBO
Fig.2.8: RBSOA of a Power BJT
The area encompassed by the RBSOA is somewhat larger than FBSOA because of the
extension of the area of higher voltages than BVCEO upto BVCBO at low collector currents.

Fig.2.9: Thermal Equivalent Circuit of Transistor

5. Breakdown Voltages
A break down voltage is defined as the absolute maximum voltage between two
terminals with the third terminal open, shorted or biased in either forward or reverse
direction.
BVSUS : The maximum voltage between the collector and emitter that can be sustained across
the transistor when it is carrying substantial collector current.
BVCEO : The maximum voltage between the collector and emitter terminal with base open
circuited.
BVCBO : This is the collector to base break down voltage when emitter is open circuited.

6. Base Drive Control

This is required to optimize the base drive of transistor. Optimization is required to
increase switching speeds. t on can be reduced by allowing base current peaking during turn-
 ICS
on, F forced resulting in low forces at the beginning. After turn on, F can
IB
be increased to a sufficiently high value to maintain the transistor in quasi-saturation region.
toff can be reduced by reversing base current and allowing base current peaking during turn
off since increasing I B 2 decreases storage time.

A typical waveform for base current is shown.

IB
IB1

IBS

0 t

-IB2

Fig.2.10: Base Drive Current Waveform

Some common types of optimizing base drive of transistor are
Turn-on Control.
Turn-off Control.
Proportional Base Control.
Antisaturation Control

Turn-On Control

Fig. 2.11: Base current peaking during turn-on

When input voltage is turned on, the base current is limited by resistor R1 and
V1 VBE V1 VBE
therefore initial value of base current is I BO , I BF .
R1 R1 R2

R2
Capacitor voltage VC V1 .
R1 R2
 R1 R2
Therefore 1 C1
R1 R2

Once input voltage v B becomes zero, the base-emitter junction is reverse biased and C1
discharges through R2. The discharging time constant is 2 R2C1 . To allow sufficient
charging and discharging time, the width of base pulse must be t1 5 1 and off period of the
1 1 0.2
pulse must be t2 5 2 .The maximum switching frequency is f s .
T t1 t2 1 2

Turn-Off Control
If the input voltage is changed to during turn-off the capacitor voltage VC is added to
V2 as reverse voltage across the transistor. There will be base current peaking during turn off.
As the capacitor C1 discharges, the reverse voltage will be reduced to a steady state value, V2
. If different turn-on and turn-off characteristics are required, a turn-off circuit using
C2 , R3 & R4 may be added. The diode D1 isolates the forward base drive circuit from the
reverse base drive circuit during turn off.

Fig: 2.12. Base current peaking during turn-on and turn-off

Proportional Base Control

This type of control has advantages over the constant drive circuit. If the collector
current changes due to change in load demand, the base drive current is changed in
proportion to collector current.
When switch S1 is turned on a pulse current of short duration would flow through the base of
transistor Q1 and Q1 is turned on into saturation. Once the collector current starts to flow, a
corresponding base current is induced due to transformer action. The transistor would latch
N IC
on itself and S1 can be turned off. The turns ratio is 2 N IB . For proper operation
1

of the circuit, the magnetizing current which must be much smaller than the collector current
should be as small as possible. The switch S1 can be implemented by a small signal transistor
and additional arrangement is necessary to discharge capacitor C1 and reset the transformer
core during turn-off of the power transistor.

Fig.2.13: Proportional base drive circuit

Antisaturation Control

Fig:2.14: Collector Clamping Circuit

If a transistor is driven hard, the storage time which is proportional to the base current
increases and the switching speed is reduced. The storage time can be reduced by operating
the transistor in soft saturation rather than hard saturation. This can be accomplished by
clamping CE voltage to a pre-determined level and the collector current is given by
VCC VCM
IC .
RC

Where VCM is the clamping voltage and VCM VCE sat .

The base current which is adequate to drive the transistor hard, can be found from
VB VD1 VBE
IB I1 and the corresponding collector current is I C I L IB .
RB

Writing the loop equation for the input base circuit,

Vab VD1 VBE
 Similarly Vab VD2 VCE

Therefore VCE VBE VD1 VD2

For clamping VD1 VD2

Therefore VCE 0.7 .......

This means that the CE voltage is raised above saturation level and there are no excess
carriers in the base and storage time is reduced.

VCC VCE VCC VBE VD1 VD2

The load current is I L and the collector current
RC RC

with clamping is IC IB I1 IC IL I1 I L
1
For clamping, VD1 VD2 and this can be accomplished by connecting two or more
diodes in place of D1 . The load resistance RC should satisfy the condition IB IL ,
I B RC VCC VBE VD1 VD2 .

The clamping action thus results a reduced collector current and almost elimination of
the storage time. At the same time, a fast turn-on is accomplished.
However, due to increased VCE , the on-state power dissipation in the transistor is
increased, whereas the switching power loss is decreased.

Source : http://elearningatria.files.wordpress.com/2013/10/ece-vii-power-electronics-10ec73-notes.pdf