XII - PHYSICS

MARKING SCHEME
SECTION A
1. (b) pE(1-cosθ)
2. (c)
3. (c)
4. (b)
5. (b))ꞷL > 1/Cꞷ
6. (a) sinθ ≥8/9
7. (c) X- rays
8. (C) zero
9. (b) central fringe is white and the fringe closest to the either side of the white fringe is red
10. (a) 13.6eV
11.(d) 1:21/2
12.(d)
13.(b)
14. (C)
15.(c)
16.(c)
SECTION B
1 1
17.SI unit of electric flux is Nm2/C. It is a scalar ( + )
2 2
Electric field intensity, = 3 × 103 î N/C
Magnitude of electric field intensity, = 3 × 103 N/C
Side of the square, s = 10 cm = 0.1 m
Area of the square, A = s2 = 0.01 m2
The plane of the square is parallel to the y-z plane. Hence, angle between the unit vector
normal to the plane and electric field, θ = 0°
Flux (Φ) through the plane is given by the relation,
Φ = = 3 × 103 × 0.01 × cos0° = 30 N m2/C (1)

18.I = neAvd
vd = I/n e A
Let R1 and R2 be resistances of P1& P2 and A1& A2 are their cross sectional areas respectively.
∴ R 1 = pl A1∴𝑅1 = ρ𝑙𝐴1 and R2 = ρlA2

When connected in series,

𝑣𝑑1 𝐼 𝑥 𝐴2
= = A2 :A1 (1)
𝑣𝑑2 𝐼 𝑥 𝐴1
𝑉 𝑉 𝑉 𝑉
When connected in parallel 𝑣𝑑1 = = and 𝑣𝑑2 = =
𝑅1 𝐴1 𝜌𝑙 𝑅2 𝐴2 𝜌𝑙
Hence ratio is 1:1

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19.- Number of turns (N) = 100
- Area of the coil (A) = 0.01 m²
- Rate of rotation (f) = 50 rps (revolutions per second)
- Magnetic field (B) = 0.05 T
- Resistance of the coil (R) = 30 Ω
ω=2πf
Substituting the given frequency:
ω=2π×50=100πrad/s (1/2)
The maximum induced emf in a coil can be calculated using the formula:
ϵ0=NBAω
Substituting the known values:
ϵ0=100⋅0.05⋅0.01⋅(100π) (1/2)
Calculating this step-by-step:
ϵ0=100⋅0.05=5
ϵ0=5⋅0.01=0.05
ϵ0=0.05⋅(100π)≈0.05⋅314.16≈15.7V (1/2)
The maximum current can be calculated using Ohm's law:
I0=ϵ0/R
Substituting the values:
I0=15.730≈0.524A
The maximum power generated can be calculated using the formula:
P=ϵ0⋅I0
Substituting the values:
P=15.7⋅0.524≈8.23W (1/2)
20.Difference in Binding Energy of C12 and C13 = 5MeV
Hence, difference in mass is = 0.0054u (1)
C13 nucleus has one extra neutron of mass 1.0086u as compared to C12 nucleus.
Hence the difference in atomic mass between C12 and C13 is
1.0086u – 0.0054u = 1.0032u (1)

− 13.6
21.(i) The ground state energy of an atom is = so,
𝑛2
1 1
for 𝑛 = 1 , Ground State Energy of H atom = - 13.6eV ( + )
2 2
ℎ𝑐 − 34 8
Now, 13.6 = = (6.626 × 10 × 3 × 10 ) /λ
𝜆
13.6 x 1.6 x 10 = (6.626 × 10− 34 × 3 × 108 ) /λ
-19

1 1
and hence λ = 91.1nm ( + )
2 2

(ii) R=R0A1/3
So, density of nucleus,
𝑚 𝑚𝐴 𝑚
ρ = = 4 ; Substituting for R0 we get ρ = 4
𝑉
3𝜋𝑅3 3𝜋𝑅0
3

⇒ where all are constants

⇒ Nuclear density is independent of mass number and atomic number. (1)

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 OR

(i) The radius of an atom varies as n2 (1/2)

rn = n2r0 where r0 is the Bohr radius given as 0.53A0 and rn is the radius of the nth orbit given
as 47.7 x10-11m.
47.7 x 10−11
Hence, we find n2 = = 9 and so, n = 3 (1)
0.53 x10−10
.
ii) Total Energy En= − 𝑒𝑉
n=3,
.
En = − =1.51eV
SECTION C
22.(a) Random velocity is the velocity of electrons in an electrical conductor in the absence of
electric field. It is of the order of 10 -6 m/s. It causes random motion resulting in collisions with metal
ions (1)
Drift velocity is the velocity of the electrons in an electrical conductor in the presence of
electric field. It is of the order of 10 -4 m/s. It contributes to electric current.

𝐼 𝐼
(b) Since j= and I = neAvd we get vd = or we can say
𝐴 𝑛𝑒𝐴
𝑗
vd = and so, thegraph is a straight line (1)
𝑛𝑒

23. (a) Ratio of induced voltages:

𝐼
We can recall induced voltage, emf ɛ = L so,
𝑡
ɛ1 𝐿1 3𝐿
= = =3 (1)
ɛ2 𝐿2 𝐿

(b) Ratio of currents:

Power is given by P = ɛI
𝑃1 𝐼1 ɛ2 1
= = = (1)
𝑃2 𝐼2 ɛ1 3

(c) Ratio of energy stored in the two coils:

1
Energy stored in the coil is given by U = LI2
2
1
𝐿 𝐼2
𝑈1 2 1 1 1
= 1 = 3(1/3)2 =
𝑈2 𝐿 𝐼2 3
2 2 2

24.a) Critical angle (C) is the angle of incidence for which the angle of refraction is 90 degree.
C = sin⁻¹( ) where, n₁ >n₂
Refractive index of a is =2 and Refractive index of b is =√2 (1)
Then we get,
sinC = sin90°
2 sinC = √2 and so sinC = = = sin 45°
C = 45°
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 Therefore, The critical angle for the interface is 45°. (1)
(b) The reflection of a plane wavefront by a concave mirror yields a spherical wavefront as
shown below

25.(a) Given λ = 500nm d = 0.44mm = 0.44 x 10 -3m and since dark fringe
appears directly opposite both slits and one bright in between them, we get the position of dark as
(2𝑛+1)𝜆𝐷
y = 0.22 x 10-3m = and n=0. So, we get, (1)
2𝑑
𝜆𝐷 𝑦.2𝑑 0.22 × 10−3 ×2×0.44×10−3
y= which implies D = =
2𝑑 𝜆 500×10−9
Simplifying we get D = 0.3872 m = 38.7cm (1)
(b) interference pattern (1) diffraction pattern (1)
26.(a) Einstein's photoelectric equation:
KEmax = hν- Φ
If hν< Φ, then the emitted electron's maximum kinetic energy (KE max) would be negative,
which is not physically meaningful.
Thus, ν> Φ/h for the photoelectric effect to take place. and we can also say ν 0 = Φ/h =
Threshold frequency. Thus, Einstein's photoelectric equation explains the threshold frequency
by demonstrating that only photons with a frequency greater than this can cause a
photoelectric effect which is in line with the experimental results. (1)
(b) The kinetic energy of the photoelectrons emitted depends on the (i) frequency of the
incident radiation and (ii) material of the emitter plate i.e. its work function.
(OR) (1 + 1)
During a photoelectric emission, when a photon is absorbed, it needs to provide enough
energy not just to overcome the work function (the energy required to escape the material) but
also to overcome the electrons binding energy. (ii) Electrons might lose some of their kinetic
energy due to interactions with other particles in the material before escaping.
27.(a) Higher the magnitude of stopping potential higher will be the frequency of incident
1 1
wave. Thus 𝑓1 > 𝑓2 > 𝑓3 ( + )
2 2
(b) Constant current indicates that all the emitted electrons are collected by the collector plate
and thus the current cannot increase further. The current being same for all the three waves
indicates that intensity of both the waves is the same.
(1+1)

28.(a) The potential drop across the 30 Ω resistor is given by

V = 30×10× 10-6 = 300 ×10-6 = 0.0003 V
Potential drop across the diode = 3 - 0.0003 = 2.9997 V (1)
(b) The diode is reverse-biased (1)
(c) The circuit diagram is given below: (1)

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 Intrinsic semiconductor: A pure semiconductor having no
impurity in it is called as intrinsic semiconductor. An intrinsic
semiconductor doped by a suitable impurity is called an extrinsic
semiconductor and is of two types:
(i) n-type semiconductor: When an intrinsic semiconductor say Si
or Ge is doped by an impurity of a pentavalent atom, we get a n-
type semiconductor. This pentavalent impurity is called donor
impurity (As, Sb, P etc.) (1)
(ii) p-type semiconductor: When an intrinsic semiconductor say Si
or Ge is doped by an impurity of a trivalent atom, we get a p-type
semiconductor. This trivalent impurity is called acceptor impurity
(In, Al, B etc.). (1)
Energy level diagrams: (1)

SECTION D
29. (i) option a - zero
(ii) option c – can be changed either by changing the wavelength
of incident light or by changing the separation between the
sources.
(iii) option a – fringe pattern disappears
(iv) option c – becomes narrower

30.(i) option a – paramagnetic substances

(ii) option a - decreases
(iii) option b – 2.4 x 10-4T
(iv) option a – diamagnetism
SECTION E
31.(a) The electric potential at a point is defined as the amount of work done per unit charge in
bringing a positive test charge from infinity to that point. The S.I. unit of electric potential is volt.
1 1
( + )
2 2
(b)

The total potential difference across combination is

𝑄 𝑄
V= 𝑉 + 𝑉2 = + and hence,
𝐶1 𝐶2
𝑉 1 1
= +
𝑄 𝐶1 𝐶2

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The ratio Q/V is called the equivalent capacitance C between the two capacitors which is
given by
1 1 1
= + (2)
𝐶𝑒𝑞 𝐶1 𝐶2

(c)

−𝑞

𝑄+𝑞
Position of Q is (0,0) -q is (0,4a) and +q is (3a,0)
So, the distance between Q and -q is 4a; distance between Q and +q is 3a and the distance
between +q and -q is 5a (Pythagoras theorem)
The potential energy of the system is equal to 0
𝑘𝑞𝑄 𝑘(−𝑞)𝑄 𝑘(−𝑞)𝑞
U= + + = - -
3𝑎 4𝑎 5𝑎
𝑘𝑄𝑞 𝑘𝑞2
= - =0
12𝑎 5𝑎
𝑘𝑞𝑄 𝑘𝑞2 12𝑞
So, − which gives Q = (2)
12𝑎 5𝑎 5

OR
(a)Electric dipole moment : Electric dipole moment is defined as the product of magnitude of
either charges and the distance between the positive and negative charge of the electric dipole.
(OR) The strength of any electric dipole is measured by the magnitude of its electric dipole
moment.

Electric dipole moment, p=q×2a (1)

It is a vector quantity. (1/2)
Electric Field of dipole at points on the equatorial plane :
Diagram and derivation (2)

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 (b) equipotential surface due to a dipole diagram (1)
Locating potential V = 0V (1/2)

32. (a) diagram to depict the magnetic field lines due to straight, long, parallel conductors
carrying current in opposite direction (1)

µ
Finding the expression of force per unit length 𝑓 = . (2)
The force is repulsive (1/2)

(b) Numerical :
µ0 𝐼1 𝐼2
Force on AB = 𝐹1 = × 𝑙𝐴𝐵
2𝜋𝑑

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 = 9.375 x 10-4N attractive towards XY (1/2)
µ0 𝐼1 𝐼2
Force on CD = 𝐹2 = × 𝑙𝐶𝐷
2𝜋𝑑
= 1.5625 X 10-4N repulsive away from XY (1/2)
-4
Net force on the loop F = 𝐹1 + 𝐹2 = 7.8125 x 10 and is attractive. (1/2)

OR

(a) Principle and working of moving coil galvanometer:

The basic principle of a moving coil galvanometer is that when a current carrying coil is
placed in a magnetic field, it experiences a torque. When a current I is passed through the
coil, the torque experienced is given by τ=NIABsinθ
Where N = No. of turns of the coil,
A = Area of the coil
B = Magnetic field and
θ = Angle between normal of coil and magnetic field (1+1)
Diagram (1)
(b) Increasing the current sensitivity does not necessarily increase the voltage sensitivity as
there is an increase in the resistance as well. (1)
(c) A galvanometer can be converted into a voltmeter by connecting a very high resistance in
series to the galvanometer. (1)

33.(a) Ray diagram of compound microscope (2)

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 (b) Advantages of reflecting type of telescope: (any2) (1)
Mirrors can be made bigger than lenses in size.
No chromatic aberration.
In case parabolic mirror is used, then no spherical aberration.
Some light gets blocked inside the refracting telescope, but not reflecting
telescope.
(c) sin i = 450 = = which is the angle of incidence for both the rays for the given
√ .
prism. (1/2)

sin ic = > for ray 1 (1/2)

. .

sin ic = < for ray 2

. .
Since the angle of incidence is greater than critical angle for ray 2, it will undergo TIR and the ray 1
will undergo only refraction. (1/2 )

OR

(a)

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For image by

For image by lens

Considering the two lenses to be a single lens of focal length f then,

(2)

(b) Numerical:

(2)

(c) The optical device given is a concave lens (1)

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