1. For the JFET shown below, with VGS(OFF)= -4V and IDss = 12 mA.
Determine the minimum value of VDD required
to put the device in the constant-current region of operation when V GS= 0V.
2. Find VDS and VGS in the circuit shown. For the particular JFET in this circuit, the parameter values
such as gm, VGS(off) , and IDSS are such that a drain current (ID) of approximately 5 mA is produced.
given that for this particular JFET the parameter values are such that V D≅7 V.
3. Determine ID and VGS that for this particular for the JFET with voltage-divider bias in the circuit shown,
4. Determine the approximate Q-point for the JFET with voltage-divider bias in the circuits shown. Idss=12mA
and Vp=-3V. Plot the characteristic curve.
5. Determine VGS and VDS for the E-MOSFET circuit shown. Assume this particular MOSFET has minimum
values ID(ON)= 200mA at VGS=4V and VGS(TH)=2V.
6. The circuit shown below find: (a) IDQ and VDSQ (b) VDS and VS
7. The fixed bias configuration circuit shown had an operating point defined by V GSQ=-2V and IDQ=5.625mA,
with IDSS=10mA and Vp= - 8V. The value of ������=40����. Determine the following:
a. gm
b. rd
c. Zi
d. Zo
e. Av
f. Av ignoring the effects if rd
8. Dertmine I and Vout.
9. What is the required value of R for a voltage gain of 10. Determine Vout.