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Esa 3

The document is an examination paper for PES University, Bangalore, for the B.Tech. I Semester course on Electronic Principles and Devices. It includes various questions covering semiconductor diodes, rectifiers, Boolean expressions, flip-flops, BJTs, and embedded systems. The assessment is structured to evaluate students' understanding of electronic principles through circuit analysis, calculations, and theoretical explanations.

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thejasmu03
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12 views2 pages

Esa 3

The document is an examination paper for PES University, Bangalore, for the B.Tech. I Semester course on Electronic Principles and Devices. It includes various questions covering semiconductor diodes, rectifiers, Boolean expressions, flip-flops, BJTs, and embedded systems. The assessment is structured to evaluate students' understanding of electronic principles through circuit analysis, calculations, and theoretical explanations.

Uploaded by

thejasmu03
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SRN

PES University, Bangalore UE20EC101


(Established under Karnataka Act No. 16 of 2013)

April 2021: END SEMESTER ASSESSMENT- B.TECH. I SEMESTER


UE20EC101 –Electronic Principles and Devices
Time: 180 mins Answer All Questions Max Marks: 100
1. a With a neat circuit diagram Explain Forward and Reverse Characteristics of a 7M
semiconductor Diode. Discuss the effect of Temperature on V-I Characteristics.
b Solve the following using second approximation for a diode. 7M

(i) Determine Vo, I1, ID1, and ID2 for the circuit shown in the Figure below.

(ii) Determine I1, I2 and V1 for the circuit shown in the Figure below

c Using Shockley’s equation, Calculate the applied voltage VD, if diode current is 5mA, 6M
thermal voltage is 26.4 mV and Reverse saturation current is 1.2nA. Consider Ideality
factor as 1.

2. a For the following Circuits, Determine the output waveform for the network and 7M
calculate the output dc level and the required PIV of each diode. Consider Ideal
Diodes.
(i) (ii)
SRN
b With a neat diagram explain working principle of Full wave Rectifier (centre-Tap) with 7M
C filter. Considering 500µF capacitor with load current of 150mA at 3% ripple
calculate the dc voltage. Assume f=50Hz.
c Determine the range of values of V i that will maintain the Zener diode in the “on” 6M
state.

3. a Simplify the given Boolean expression and Realize the same using NAND Gates only. 4M

F = XY + X(Y+Z) + Y(Y+Z)

b Write the Truth Table for Full Adder and Realize the same using 7M

(i) Basic Gates (ii) NAND Gates only.


c For the following Sequential Circuits write the Circuit diagram and Characteristic Table 9M

(i) JK Flip Flop


(ii) 4-bit Serial Input Serial Output (SISO) shift register (Consider input 1101).
(iii) 3 bit Asynchronous up-counter
4. a With a neat diagram explain Input and output V-I characteristics of NPN BJT Common 7M
Base Transistor and find the amplification factor for the following Circuit.

b Derive the Expression for Collector Current in terms of β and ICEO and Find the value 7M
of IB, α and β if IE = 1.2mA and IC = 1.15mA.
c With a neat diagram explain Cellular Communication and describe HAND-OFF 6 M
strategy.
5 a List the Characteristics of Embedded System and discuss the types of embedded 6M
systems based on Generation.
b Give the differences between Microprocessor and Microcontroller 6M

c Draw the Data Flow Model of ARM Processor and explain the same. 8M

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