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Tutorial 1

The document outlines a tutorial for the course PH 574: Physics of Semiconductor Devices, led by instructor Uditendu Mukhopadhyay. It includes various problems related to semiconductor physics, such as calculating energy levels, effective mass tensors, density of states, and Fermi-level positions in different scenarios. Additionally, it discusses the behavior of n-type semiconductors under thermal equilibrium and the effects of doping concentrations on electron and hole concentrations.

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soham sawant
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20 views1 page

Tutorial 1

The document outlines a tutorial for the course PH 574: Physics of Semiconductor Devices, led by instructor Uditendu Mukhopadhyay. It includes various problems related to semiconductor physics, such as calculating energy levels, effective mass tensors, density of states, and Fermi-level positions in different scenarios. Additionally, it discusses the behavior of n-type semiconductors under thermal equilibrium and the effects of doping concentrations on electron and hole concentrations.

Uploaded by

soham sawant
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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PH 574: Physics of semiconductor devices (Tutorial 1)

Course instructor: Uditendu Mukhopadhyay


Jan. 2025
1. Consider a simple cubic lattice of lattice constant a, and of size 𝐿𝑥 , 𝐿𝑦 , and 𝐿𝑧 in x, y, and z-
directions, respectively. Within free electron approximation obtain the minimum energy
separation between levels in the valence band.
2. Obtain a general expression for the inverse of effective mass tensor at the band extrema

3. Obtain the conduction band effective density of state N c when the electron effective mass
tensor at the conduction band minimum is given by
m n1 0 0
0 mn 2 0
0 0 mn3
4. In the above problem, obtain an expression for energy density of states g (E ) around the
conduction band minimum.
5. Obtain the valence band effective density of state N v , when both the heavy and light hole
branches with effective masses m hh and mlh , respectively, are occupied with holes.
6. Compare the temperature dependence of the intrinsic Fermi-level w.r.t valance band edge for
(i) Si, (ii) Ge and (iii) GaAs in nondegenerate case.
7. Consider that a GaAs sample is in thermal equilibrium at room temperature (300 K). Note that
GaAs has the band gap energy E g =1.4 eV, electron effective mass m n = 0.067, hole effective
mass m hh = 0.5, mlh =0.076, dielectric constant  s = 13 o . Plot the concentration of electrons
and holes as a function of shallow acceptor doping concentration N a ranging from 1013 cm-3
to 1017 cm-3 for a shallow donor concentration N d of 1016 cm-3.
8. Obtain the Fermi-level position as a function of temperature for an intrinsic degenerate n-
type semiconductor.
9. Consider an n-type semiconductor, which is doped with two donors. The densities and
activation energies for the two can be expressed as N dj and E dj = E c − E dj , respectively,
where j = 1 or 2 stands for the two donor types. Obtain the electron concentration n and
Fermi-level E F as a function of temperature T . Schematically plot ln(n) vs. 𝑇profile for this
case.

10. In a semiconductor out of equilibrium, quasi-Fermi levels 𝐸𝐹𝑛 and 𝐸𝐹𝑝 are defined to calculate
electron and hole concentrations, respectively. What is the total current through the
semiconductor out of equilibrium in terms of the quasi-Fermi levels?

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