ELC2242

Section #2
Chapter ( 7 )
Prof. Muhammad A. M. Islam

Eng/ Mikhail Nady Daoud E-mail : [email protected]

Research &Teaching Assistant WhatsApp : +20 1272375847
Faculty of engineering , Cairo University
Systems & Biomedical engineering department
 Microelectronic Circuits
Ch 7: Transistor Amplifiers
Introduction
7.1 Basic Principles
7.2 Small Signal Operations and Models
7.3 Basic Configurations
7.4 Biasing
7.5 Discrete-Circuit Amplifiers.

Qs: (3, 8, 10, 13, 15, 19), (24, 30, 31, 33, 35, 37, 42, 43, 50, 51, 53, 57), (60,
61, 65, 67, 68, 73, 74, 78, 80, 83, 84 , 87, 88), (92, 93, 95, 98, 103, 107,
109, 112, 114, 116), (118, 120, 121, 122, 126, 129, 131, 133, 134).3, 8,
D 7.83 A source follower is required to deliver
a 0.5-V peak sinusoid to a 2-kΩ load.
If the peak amplitude of 𝑣𝑣𝑔𝑔𝑔𝑔 is to be limited to 50 mV,
and the MOSFET transconductance parameter 𝑘𝑘𝑛𝑛 is 5 mA/V2,
what is the lowest value of 𝐼𝐼𝐷𝐷 at which the MOSFET can be
biased?
At this bias current,
what are the maximum and minimum currents that the
MOSFET will be conducting (at the positive and negative peaks
of the output sine wave)?
What must the peak amplitude of 𝑣𝑣𝑠𝑠𝑠𝑠𝑠𝑠 be?
Key Point Common-drain amplifier or source follower
Solu. 7.83 :
D 7.84 An emitter follower is required to deliver
a 0.5-V peak sinusoid to a 2-kΩ load.
If the peak amplitude of 𝑣𝑣𝑏𝑏𝑏𝑏 is to be limited to 5 mV,
what is the lowest value of 𝐼𝐼𝐸𝐸 at which the BJT can be biased?
At this bias current,
what are the maximum and minimum currents
that the BJT will be conducting (at the positive and negative
peaks of the output sine wave)?
If the resistance of the signal source is 200 k,
what value of 𝐺𝐺𝑣𝑣 is obtained?
Thus determine the required amplitude of 𝑣𝑣𝑠𝑠𝑠𝑠𝑠𝑠 .
Assume β = 100.
 Common-collector amplifier or emitter follower
Key Point
 Simple equivalent circuits for the emitter follower

Key Point
Key Point

Th´evenin
representation
of the output
of the emitter
follower
Solu. 7.84 :
7.87 For the Darlington follower in Fig. 7.48(b)
let 𝑄𝑄2 be biased at a collector current of 10 mA
and let 𝛽𝛽1 = 𝛽𝛽2 = 100.
If 𝑅𝑅𝑠𝑠𝑠𝑠𝑠𝑠 = 1 M and 𝑅𝑅𝐿𝐿 = 1 k,
find 𝐺𝐺𝑣𝑣𝑣𝑣 , 𝑅𝑅𝑜𝑜𝑜𝑜𝑜𝑜 , and 𝐺𝐺𝑣𝑣
Key Point

(a) The Darlington configuration, (b) Voltage follower using the Darlington configuration.
Key Point

Th´evenin
representation
of the output
of the emitter
follower
Solu. 7.87 :
7.48
7.88 For the general amplifier circuit
shown in Fig. P7.88
neglect the Early effect.
(a) Find expressions for
𝑣𝑣𝑐𝑐 / 𝑣𝑣𝑠𝑠𝑠𝑠𝑠𝑠 and 𝑣𝑣𝑒𝑒 / 𝑣𝑣𝑠𝑠𝑠𝑠𝑠𝑠 .

(b) If 𝑣𝑣𝑠𝑠𝑠𝑠𝑠𝑠 is disconnected

from node X,
node X is grounded,
and node Y is disconnected from ground and connected to 𝑣𝑣𝑠𝑠𝑠𝑠𝑠𝑠 ,
find the new expression for 𝑣𝑣𝑐𝑐 / 𝑣𝑣𝑠𝑠𝑠𝑠𝑠𝑠
Solu. 7.88 a :
Solu. 7.88 b :
 Microelectronic Circuits
Ch 7: Transistor Amplifiers
Introduction
7.1 Basic Principles
7.2 Small Signal Operations and Models
7.3 Basic Configurations
7.4 Biasing
7.5 Discrete-Circuit Amplifiers.

Qs: (3, 8, 10, 13, 15, 19), (24, 30, 31, 33, 35, 37, 42, 43, 50, 51, 53, 57), (60,
61, 65, 67, 68, 73, 74, 78, 80, 83, 84 , 87, 88), (92, 93, 95, 98, 103, 107,
109, 112, 114, 116), (118, 120, 121, 122, 126, 129, 131, 133, 134).3, 8,
D 7.92 Consider the classical biasing scheme
shown in Fig. 7.50(c), using a 9-V supply.
For the MOSFET, 𝑉𝑉𝑡𝑡 = 0.7 V, 𝜆𝜆 = 0,
and 𝑘𝑘𝑛𝑛 = 5 mA/𝑉𝑉 2 .
Arrange that in current is 0.2 mA, with about
one-third of the supply voltage across each
of 𝑅𝑅𝑠𝑠 and 𝑅𝑅𝑛𝑛 .
Use 22 MΩ for the larger of 𝑅𝑅𝐺𝐺1 and 𝑅𝑅𝐺𝐺2 .
What are the values of 𝑅𝑅𝐺𝐺1 , 𝑅𝑅𝐺𝐺2 , 𝑅𝑅𝑆𝑆 , and 𝑅𝑅𝐷𝐷
that you have chosen? Specify them to two
significant digits.
For your design, how far is the drain voltage
from the edge of saturation?
Key Point

Biasing using a
fixed voltage at
the gate, V , and
G

a resistance in
the source lead,
R S
Solu. 7.92 :
Solu. 7.92 . Cont. :
D 7.103 Figure P7.103 shows a variation of
the feedback-bias circuit of Fig. 7.50.
Using a 5-V supply with an NMOS transistor
for which 𝑉𝑉𝑡𝑡 = 0.8 V, 𝑘𝑘𝑛𝑛 = 8 mA/𝑉𝑉 2 , and λ=0,
provide a design that biases the transistor at
𝐼𝐼𝐷𝐷 =1 mA, with 𝑉𝑉𝐷𝐷𝐷𝐷 large enough to allow
saturation operation for a 2-V negative signal
swing at the drain.
Use 22MΩ as the largest resistor in the
feedback-bias network.
What values of 𝑅𝑅𝐷𝐷 , 𝑅𝑅𝐺𝐺1 , and 𝑅𝑅𝐺𝐺2 have you
chosen?
Specify all resistors to two significant digits.
Solu. 7.103 :
D 7.106 Consider the single-supply bias network in
Fig. 7.54(a). Provide a design using a 9-V supply in
which the supply voltage is equally split between 𝑅𝑅𝐶𝐶 ,
𝑉𝑉𝐶𝐶𝐶𝐶 , and 𝑅𝑅𝐸𝐸 with a collector current of 0.5 mA. The
transistor 𝛽𝛽 is specified to have a minimum value of 80.
Use a voltage-divider current of 𝐼𝐼𝐸𝐸 /10, or slightly
higher. Since a reasonable design should operate for
the best transistors for which 𝛽𝛽 is very high,
do your initial design with 𝛽𝛽 = ∞.
Then choose the 5% resistors (see Appendix J) required
to produce a VBB that is slightly higher than the ideal
value. Specify the values you have chosen for 𝑅𝑅𝐸𝐸 , 𝑅𝑅𝐶𝐶 ,
𝑅𝑅1 and 𝑅𝑅2 . Now, find 𝑉𝑉𝐵𝐵 , 𝑉𝑉𝐸𝐸 , 𝑉𝑉𝐶𝐶 and 𝐼𝐼𝐶𝐶 for your final
design using 𝛽𝛽= 80.
Key Point
Solu. 7.106 :
Solu. 7.106. Cont. :
D *7.112

(a) Using a 3-V power supply,

design the feedback bias circuit of Fig. 7.54
to provide 𝐼𝐼𝐶𝐶 =1 mA and 𝑉𝑉𝐶𝐶 = 𝑉𝑉𝐶𝐶𝐶𝐶 /2
for β=100.

(b) Select standard 5% resistor values,

and reevaluate 𝑉𝑉𝐶𝐶 and 𝐼𝐼𝐶𝐶 for β=100.

(c) Find 𝑉𝑉𝐶𝐶 and 𝐼𝐼𝐶𝐶 for β=∞.

(d) To improve the situation that obtains
when high-β transistors are used,
we have to arrange for an additional
current to flow through 𝑅𝑅𝐵𝐵 .
This can be achieved by connecting a
resistor between base and emitter,
as shown in Fig. P7.112.
Design this circuit for β = 100.
Use a current through 𝑅𝑅𝐵𝐵2
equal to the base current.
Now, what values of 𝑉𝑉𝐶𝐶 and 𝐼𝐼𝐶𝐶 result with
β=∞?
Key Point
Solu. 7.112 :
(d) To improve the situation that obtains
when high-β transistors are used,
we have to arrange for an additional
current to flow through R .
B

This can be achieved by connecting a

resistor between base and emitter,
as shown in Fig. P7.112.
Design this circuit for β = 100.
Use a current through RB2
equal to the base current.
Now, what values of VC and IC
result with β=∞?
Solu. 7.112 ( d ) :
Microelectronic Circuits
Ch 7: Transistor Amplifiers
Introduction
7.1 Basic Principles
7.2 Small Signal Operations and Models
7.3 Basic Configurations
7.4 Biasing
7.5 Discrete-Circuit Amplifiers.

Qs: (3, 8, 10, 13, 15, 19), (24, 30, 31, 33, 35, 37, 42, 43, 50, 51, 53, 57), (60,
61, 65, 67, 68, 73, 74, 78, 80, 83, 84 , 87, 88), (92, 93, 95, 98, 103, 107,
109, 112, 114, 116), (118, 120, 121, 122, 126, 129, 131, 133, 134).3, 8,
Thanks