Laboratory 1:

DIODE
LAB 1
Instructor: Nguyễn Tuấn Hùng
Class: TT02
Group: 8

- Triệu Thành Vinh - 2213980

- Nguyễn Đức Minh Đăng - 2251011
- Nguyễn Trần Trúc Minh - 2251031

OBJECTIVES
➢ The purpose of this lab is to learn how to use Atlas – Silvaco TCAD Tool.
➢ We learn how to use the Atlas command language to define a semiconductor device.
➢ We examine Schottky Diode Forward Characteristic.

PREPARATION FOR LAB 1

➢ Install Silvaco Tool.
➢ Read User manual.

REFERENCE
1. Atlas User’s Manual
2. TCAD Examples

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EXPERIMENT 1
Objective: Understand how to describe an n-type or p-type semiconductor sample.

Requirement: The following code is used for defining an n-type semiconductor sample with size
LxW. Observe the result of the code.

go atlas

#Mesh definition
mesh space.mult=1.0
x.mesh loc=0 spac=0.2
x.mesh loc=2 spac=0.2
y.mesh loc=0 spac=1
y.mesh loc=10 spac=1

#Region definition
region num=1 silicon

#Electrode definition
electrode name=anode top
electrode name=cathode bottom

#Doping definition
doping n.type uniform conc=1e14

#Save to structure (str) file

save outf=experiment1.str
tonyplot experiment1.str

#Define model to simulate

model conmob fldmob srh auger bgn
solve init
method newton
log outfile=experiment1.log

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solve vanode=0 vstep=0.1 vfinal=2 name=anode
tonyplot experiment1.log

#If you want to display currents, electric field, … on the structrure

# You must save to .str file here.
quit
Instruction:
- The first part, Mesh Definition is used to define a mesh or a coordinate for drawing the structure.
This mesh is shown in Figure 1. The x-axis is defined from 0 - 2µm, space is 0.2 µm. The y-axis
is defined from 0 - 10µm, space is 1 µm.
- The second part, Region Definition is used to define a region of a semiconductor. In this
experiment, we have 1 region which is silicon (Figure 2). Hence, it is numbered 1 and the material
is silicon. If there are many regions, they must be defined by using coordinates.
- The third part, Electrode Definition is used to define the contacts of the device which are
connected to the power supply. In this part, the anode and cathode electrodes are defined at top
and bottom of region 1 (Figure 3), respectively. Therefore, this code must be right after the region
1 definition. These electrodes can be defined by using the coordinates.
- The next part, Doping Definition describes how to dope the semiconductor. The code “n.type
uniform conc=1e14” means Donor doping with concentration 1014cm-3 . The chosen doping model
is uniform (Figure 4).

Figure 1 Figure 2

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Figure 3 Figure 4
- After the structure description, all parameter are save in “experiment1.str” file. The code
“tonyplot experiment.str” is displayed the structure.
- Finally, the model statement is used to specify the following set of models: carrier concentration
dependent mobility (ccsmob) , field dependent mobility, band-gap narrowing, SRH and Auger
recombination. The two carrier model is specified here as well (carriers=2).
- The electrical simulation simply ramps the anode voltage from 0.0V to 2.0V in 0.1V steps using
the solve statement. The results of the simulation are then displayed using TonyPlot.
Note: If you want to display currents, electric field, … on the structrure, you must save .str file
after the electrical simulation step.

Check:

➢ Show two results in TonyPlot Tool: IV characteristics and structure display in 2D.

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➢ In TonyPlot Window display structure, right click and choose “Display…”. Then choose
to display: Mesh, Contours and Electrodes. Capture and explain the result.

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The graph illustrates a uniformly doped n-type region of a n-type throughout the entire device. This
means that there are more donor impurities than acceptor impurities in the simulated region.
- 0-10: This is the distance axis in microns (µm).
- Abs Net Doping: This is the absolute net doping concentration, which is the difference between the
concentration of donor impurities and acceptor impurities. A positive value indicates n-type doping
(more donors than acceptors), and a negative value indicates p-type doping (more acceptors than
donors).
- 6-15.0: This is the scale for the doping concentration on the y-axis. The net doping concentration
appears to range from 10^14 to 10^15 cm^-3
- Anode: This refers to the positively charged electrode of the diode.
- Cathode: This refers to the negatively charged electrode of the diode.
- T: This refers to the temperature of the device simulation.

Are the mesh, contours and electrodes display the same as the definition?

➢ In TonyPlot Window display IV characteristics, set the parameters of the vertical axis and
horizontal are Anode Current and Anode Voltage. Why the IV characteristic is a straight
line?

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This is because ideal resistors obey Ohm’s law, which states that the current through a conductor is
directly proportional to the voltage across it.

➢ Calculate the resistance of the sample by using the graph. Then, calculate the resistivity
and the mobility. Given the area of the current is unity. (Show the formulas and calculate
step by step).

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Resistance:

𝑉
𝑅= (𝑂ℎ𝑚′ 𝑠 𝑙𝑎𝑤)
𝐼
1.6
= = 2370370,37 Ω
6,75.10−7

Resistivity:

𝑅 2370370,37
𝑝= = = 2,37037037.1012 (Ω𝑚)
𝐿 10−6

Mobility:

1 1
µ= =
𝑒𝑛𝑝 1,602176.10−19 . 14,2.10−6 . 2,37037037.1012
= 1,854322312.1011 (𝑚2 𝑉 −1 𝑠 −1 )

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➢ Recalculate three parameters above by using the following code:

extract init infile="experiment1.log"

extract name="res" grad from curve(i."anode", v."anode") where y.val=1
extract name="rho" $res/10
extract name="mobility" 1/($res*e*n/10)

In the code, the “res” is the resistance of the sample. It is calculated from the graph at the point at
which the y-coordinate is 1( or V anode = 1V). The “rho” and “mobility” is calculated from
“res” (it is written $res in code). Students fill the red code by using the formulas above.

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EXPERIMENT 2
Objective: Understand how to describe an n-type or p-type semiconductor sample.

Requirement: Write a code to define a p-type semiconductor sample. The sample has parameters:

- L = 5μm and W = 12 μm. The spacing of x-axis and y-axis are 0.02 μm and 0.5 μm.

- Doping: Acceptor, concentrate: 2,5.1016 cm-3, uniform.

- The electrical simulation: the anode voltage from 0.0V to 2V step 0.05V.

Check:

➢ Show two results in TonyPlot Tool: IV characteristics and structure display in 2D.

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In TonyPlot Window display structure, right click and choose “Display…”. Then choose to
display: Mesh, Contours and Electrodes. Capture and explain the result.

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The graph illustrates a uniformly doped p-type region of a p-type throughout the entire device.
.green lights:The green lines with varying intensities represent different levels of doping across the
material. The intensity of the color could be proportional to the concentration of dopants.
.This is the absolute net doping concentration, which is the difference between the concentration of
donor impurities and acceptor impurities. A positive value indicates n-type doping (more donors than
acceptors), and a negative value indicates p-type doping (more acceptors than donors)
.Anode refers to the positively charged electrode of the diode, cathode refers to the negatively charged
electrode of the diode.

➢ Calculate the resistance, the resistivity and the mobility of the sample by using the graph
and by code:

𝑉 1,6
Resistance: R= 𝐼 =0,00135=1185,185(𝛺)

𝑅 1185,185
Resistivity: 𝜌= 𝐿 = =2,37037.108 (𝛺𝑚)
5.10−6

1 1
Mobility: µ = = = 1,854322602.1015 (𝑚2 𝑉 −1 𝑠 −1 )
𝑒𝑛𝑝 1,602176.10−19 .14,2.10−6 .2,37037.108

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EXPERIMENT 3
Objective: Understand how to describe a pn junction.

Requirement: Write a code to define a theory pn junction in Figure 5. The junction has parameters:
NA = 2,3.1017 cm-3 and ND = 8,5.1016 cm-3. The spacing of x-axis and y-axis are 0.1μm and 0.02μm.

Figure 5a

Figure 5b

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Instruction:

- In this experiment, there are 2 regions and 2 electrodes. These are defined by using coordinates.
The example code for this is shown:

#define region 1

region num=1 material=silicon x.min=0 x.max=5 y.min =0 y.max=4

#define anode electrode

electrode name=anode material=metal x.min=-0.2 x.max=0 y.min =0 y.max=4

- One region is doped Acceptor and one region is doped Donor. The example code for doping in
one region is shown:

#define doping

doping uniform region=1 p.type conc=2.3e17

- The electrical simulation simply ramps the anode voltage from 0.0V to 2.0V in 0.1V steps using
the solve statement.

Check:

➢ Show two results in TonyPlot Tool: IV characteristics and structure of pn junction in 2D.

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➢ In TonyPlot Window display structure, right click and choose “Display…”. Then choose
to display: Contours and Electrodes. Capture the result.

➢ On Toolbar menu, choose Tools ➔ Cutline. Draw a horizontal cutline at 2 micron. Show
the concentration allocation with respect to x-coordinate. Capture and explain why we have
this graph.

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Explanation: The graph shows the changing in concentration, the left side has higher
concentration than the right side. While outside, at the conductor part, the concentration back
to zero, because it’s a piece of metal.

➢ Right click, choose to Display Electric Field X and Y. Capture and explain the graph.

Explanation: Based on the above graph, we can see the lines of electric field of Y is
always zero, while the electric field of X has a sudden drop when it comes to the inner
regions, where the silicon are. It can be explained that why it has such graph like this due to
the high resistivity of the material, the electric field of both X and Y is blocked and return
normal after exit out to the conductor part.

➢ Then, choose to potential. Capture and explain the graph.

Explanation: Based on the below graph, we can see the line of potential (V) have a sharp
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drop at the two areas of conductor. Inside the region area, we can observe that the potential
line is gradually decreased across the region areas, from region 1, which has smaller
concentration, to region 2.

➢ From these graphs, find built-in potential, maximum electric field and width of depletion
region.

𝑘𝑇 𝑁𝑑 𝑁𝑎
Buit-in Potential: 𝑉𝑏𝑖 = ln ( )
𝑞 𝑛𝑖2

Note: If you want to display potential, electric field, … on the structrure, you must save .str file
after the electrical simulation step.

➢ In TonyPlot Window display IV characteristics, set the parameters of the vertical axis and
horizontal are Anode Current and Anode Voltage. Capture the I-V characteristic?

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EXPERIMENT 4
Objective: Understand how to describe a pn junction.
Requirement: Write a code to define a practical pn junction in Figure 6. The junction has
parameters: NA = 2,3.1017 cm-3 and ND = 8,5.1016 cm-3. Students choose the coordinate and
spacing at each axis.

The other parameters are:

- L1 = 10 μm, W1 = 12 μm.
- L2 = 4 μm, W2 = 6 μm.
- W3 = 4 μm.
- L4 = 0.2 μm.

Instruction:

- In this experiment, there are oxide region. The example code for this is shown:

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#define oxide region
region num=2 material=oxide x.min=0 x.max=5 y.min =0 y.max=4

go atlas
#Mesh definition
mesh space.mult=1.0
x.mesh loc=0 spac=1
x.mesh loc=12 spac=1
y.mesh loc=0 spac=0.2
y.mesh loc=10.4 spac=0.2

#define region donor

region num=1 material=silicon x.min=3 x.max=9 y.min =0.2 y.max=4.2

#define region acceptor

region num=2 material=silicon x.min=0 x.max=3 y.min =0.2 y.max=4.2
region num=3 material=silicon x.min=9 x.max=12 y.min =0.2 y.max=4.2
region num=4 material=silicon x.min=0 x.max=12 y.min =4.2 y.max=10.2

#define region oxide

region num=5 material=oxide x.min=0 x.max=4 y.min =0 y.max=0.2
region num=6 material=oxide x.min=8 x.max=12 y.min =0 y.max=0.2

#define anode electrode

electrode name=anode material=metal x.min=4 x.max=8 y.min =0 y.max=0.2
electrode name=cathode material=metal x.min=0 x.max=12 y.min =10.2
y.max=10

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#define doping
doping uniform region=1 p.type conc=2.3e17
doping uniform region=2 n.type conc=8.5e16
doping uniform region=3 n.type conc=8.5e16
doping uniform region=4 n.type conc=8.5e16

#Define model to simulate

model conmob fldmob srh auger bgn
solve init
method newton
log outfile=experiment3.log
solve vanode=0 vstep=0.1 vfinal=2 name=anode
tonyplot experiment3.log
#Save to structure (str) file
save outf=experiment3.str
tonyplot experiment3.str
quit

Check:

➢ Show two results in TonyPlot Tool: IV characteristics and structure of pn junction in 2D.

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➢ In TonyPlot Window display structure, right click and choose “Display…”. Then choose
to display: Contours and Electrodes. Capture the result.

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➢ On Toolbar menu, choose Tools ➔ Cutline. Draw a vertical cutline at the middle of pn
junction. Show the concentration allocation with respect to y-coordinate. Capture and
explain why we have this graph.

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Regions:

The graph should show the net doping concentration (impurity concentration) across the device,
plotted along the X-axis (position). The pn junction refers to the p-type and n-type doped regions.
Ideally, the cutline would be perfectly vertical, but depending on the mesh generation, it might
have slight inclines.

On the left side (negative X), you should see a region with a positive net doping concentration (p-
type). This corresponds to the donor region.

In the middle, there should be a narrow transition region where the net doping concentration
changes sign from positive to negative. This is the depletion region.

On the right side (positive X), you should see a region with a negative net doping concentration (n-
type). This corresponds to the acceptor region.

Doping Concentration:

The Y-axis should represent the net doping concentration (carriers per cubic centimeter, cm^-3).
The scale will vary depending on the specific doping values used in your simulation.

The p-type region will have a positive doping concentration, which should be relatively constant
throughout the region (ideally a horizontal line).

The n-type region will have a negative doping concentration, which should also be relatively
constant.

The depletion region will show a sharp decrease in net doping concentration from positive to
negative. The concentration will approach zero in the center of the depletion region.

Cutline Placement:
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The interpretation assumes the cutline is perfectly vertical and goes through the exact center of the
pn junction. If the cutline is offset slightly, the doping concentration profile might not be
symmetrical around the center.

➢ Right click, choose to Display Electric Field X and Y. Capture and explain the graph.

X-Axis:
The X-axis represents the distance (microns, µm) across the simulated device.

Y-Axis:
The Y-axis represents the electric field (E-Field) in units of Volts per centimeter (V/cm). Positive
values indicate the electric field points to the right, and negative values indicate it points to the left.

Regions:

The graph should show a clear distinction between the p-type, depletion, and n-type regions
based on the electric field profile:

P-type region (X < 3 µm): In a perfect p-type region, the electric field should be close to zero
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(flat line) because the positive charges (holes) shield any applied electric field. However, due to
numerical effects or non-uniform doping, the graph might show a slight positive or negative
electric field.

Depletion region (3 µm < X < 9 µm): This region has very low net charge carrier concentration.
The electric field should be relatively high (strong peak) in this region due to the presence
of immobile dopant ions. The electric field typically reaches its maximum value within the
depletion region.

N-type region (X > 9 µm): Similar to the p-type region, the electric field should be close to zero (flat
line) due to the negative charges (electrons) shielding the electric field. There might be a slight
positive or negative electric field depending on the doping concentration and simulation details.

Electrodes:

The electric field typically drops to near zero at the edges (X=0 µm and X=12 µm)
corresponding to the anode and cathode contacts.

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X-Axis:

The X-axis represents the distance (microns, µm) across the simulated device.
Y-Axis:

The Y-axis represents the electric field (E-Field) in units of Volts per centimeter (V/cm). Positive
values indicate the electric field points to the right, and negative values indicate it points to the left.
Regions:

The graph clearly shows the electric field profile across the p-type, depletion, and n-type regions:

P-type region (X < 3 µm): The electric field is close to zero (flat line around 0 V/cm) because the
positive charges (holes) shield any applied electric field.
Depletion region (3 µm < X < 9 µm): This region has very low net charge carrier concentration. The
electric field is relatively high (strong peak exceeding 1000 V/cm) in this region due to the presence
of immobile dopant ions. The electric field reaches its maximum value within the depletion region.
N-type region (X > 9 µm): Similar to the p-type region, the electric field is close to zero (flat line
around 0 V/cm) due to the negative charges (electrons) shielding the electric field.
Electrodes:

The electric field drops to near zero at the edges (X=0 µm and X=12 µm) corresponding to the anode
and cathode contacts, as expected.

➢ Then, choose to potential. Capture and explain the graph.

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X-Axis:

The X-axis represents the distance (microns, µm) across the simulated device.
Y-Axis:

The Y-axis represents the electric potential (Voltage) in Volts (V).

Regions:

The graph shows a clear distinction between the p-type, depletion, and n-type regions based on
the potential profile:

P-type region (X < 3 µm): The potential has a relatively constant positive value. This is because
the p-type material has a positive charge carrier concentration (holes) that contributes to a
positive electric field, resulting in a positive potential.
Depletion region (3 µm < X < 9 µm): The potential drops sharply across the depletion region.
This sharp drop reflects the high electric field in this region caused by the lack of mobile charge
carriers. The depletion region has the most significant potential change within the device.
N-type region (X > 9 µm): The potential has a relatively constant negative value. This is
because the n-type material has a negative charge carrier concentration (electrons) that
contributes to a negative electric field, resulting in a negative potential.
Electrodes:

The potential typically reaches its maximum value at the anode (X=4 µm) and its minimum
value at the cathode (X=8 µm) due to the applied voltage between these electrodes.

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➢ From these graphs, find built-in potential, maximum electric field and width of depletion

region.
Note: If you want to display potential, electric field, … on the structrure, you must save .str file
after the electrical simulation step.

➢ In TonyPlot Window display IV characteristics, set the parameters of the vertical axis and
horizontal are Anode Current and Anode Voltage. Capture the I-V characteristic?

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Semiconductor Devices Laboratory (Advanced Program)