Lecture 15

Illustration of meaning of word

transistor, its classification,
introduction of structure of BJT,
Explanation of current flow in BJT,
Conditions for different regions of
operation and their uses
Transistor

• Transistor is a device which transfers applied signal from

one type of resister to other type, For example signal can
be transferred from low resistor to high or from high
resistor to low resistor.

• “Transistor” (Transfer +resistor).

• Transistor is called bipolar device because its operation
depends on the interaction of majority and minority carrier
both.
Classification of Transistor
FET: Field Effect Transistor
JFET: Junction Field Effect
Transistor
MOSFET: Metal Oxide
Semiconductor Field Effect
Transistor FET and BJT Transistor
Construction of Transistor
n-p-n

p-n-p
• Emitter: It is the highest doping region in the
transistor. It supplies (emits) carrier to the base. It
supplies electron to the base in n-p-n and holes in p-n-p.

• Base: The middle part of transistor is called base. It is very

thin and lightly doped . So most of the carrier coming from
emitter passes to collector.

• Collector: Collector collect the carriers which are coming

from base. Doping of collector is heavier than base but less
than emitter.
Area profile: C > E > B
Doping profile: E > C > B
Mode or Working Regions of Transistor

• Transistor operates in three modes:

i) Active region:
• In active region emitter-base junction (JE) is forward biased
and collector -base junction (JC) is reverse biased. In this
region transistor works as an amplifier.
 ii) Saturation region:

• In this region emitter-base junction (JE) and collector -base

junction (JC) are forward biased. In this region transistor
works as a closed switch.
iii) Cut-off region:

• In this region emitter-base junction (JE) and collector -

base junction (JC) are reverse biased. In this region
transistor works as a open switch.
Operation of Transistor in Active Region
 To operate BJT in active region JEB (emitter base

junction) must be forward biased and JCB (collector base

junction) must be reverse biased.
Operation of Transistor in Active Region
 JEB is forward biased by the battery VEE by which the

depletion region will decrease and a majority carrier flow

will occur from emitter to base giving current Imajority or IE.

 So, Here, IeE is current due to electrons of emitter region

and IhB is current due to holes in base region.
Operation of Transistor in Active
Region

 In base region there is recombination between electrons

and holes due to which base current is obtained. As
number of holes in base is very small, base current is
very small.
 JCB is reverse biased by VCC. So collector current is due
to flow of minority charge carriers from both sides of the
junction. In base minority carriers are electrons left after
recombination and in collector minority carriers are
holes. So,
 Directions of all terminal currents are shown in figure and
it is clear that,
Operation of Transistor in Active Region

 Directions of all terminal currents are shown in

figure and it is clear that,
Lecture 16

Introduction of CB Configurations
of BJT: Structure, Current gain,
Input Characteristics, Output
Characteristics
Transistor Configuration or Connection

• Transistor has three terminals emitter, base and collector.

But we require four terminals to connect the transistor in a
circuit as an amplifier. Two for input and two for output.
• This is achieved by making one terminal of transistor
common to input and output.

• So, transistor has three configurations based on the

common terminal.
i) Common base configuration (CB)
ii)Common emitter configuration (CE)
iii) Common collector configuration (CC)
Common base configuration (CB)
• Input is applied between emitter and base

• Output is taken out from collector and base

• Base is common between input and output.

i) DC Current gain:
• It is the ratio of output current (IC) to the input current (IE).

IC
α=
IE

• Since IE > IC so value of α is less than 1

• Value of α ranges from .90 to .99

• So, no current gain is available in CB configuration.

Expression for Output Current
𝐈𝐂 = 𝐈𝐂 𝐌𝐚𝐣 + 𝐈𝐂𝐎
For CB ICO = ICBO ( Collecter to base current when emitte
𝐒𝐨 𝐈𝐂 = 𝐈𝐂 𝐌𝐚𝐣 + 𝐈𝐂𝐁𝐎 … … … … 1

IC(Maj
but α =
IE
IC(Maj = αIE … … … … … … 2

Using 1 and 2

𝐈𝐂 = 𝛂𝐈𝐄 + 𝐈𝐂𝐁𝐎
Input V/I Characteristics of CB Configuration

 It is graph between input current (IE) and

input voltage (VEB) at constant output voltage
(VCB). This graph is drawn for active region of
BJT.
Input V/I Characteristics of CB Configuration

 By keeping constant VCB, when forward bias at emitter

base junction is increased then graph between IB and
VEB is similar to forward characteristics of pn junction
diode. If this graph is again drawn for some higher value
of VCB a similar graph is obtained with reduced knee
voltage.
Output V/I Characteristics of CB Configuration

 It is graph between output current IC and output voltage

VCE at constant input current IE. This graph is drawn for
all three operating regions of BJT.

 To draw the graph in active region equation of output

current,
Output V/I Characteristics of CB Configuration

 Active Region: For given α and IE, IC is dependent only on I0

which is slightly dependent on VCB. So, graph of active region is
almost independent of VCB.

 Saturation Region: When the transistor is switched from

active to saturation region, a large change in collector current for
very small forward bias voltage at collector to base junction is
obtained in negative direction.

 Cut-Off Region: When both the junctions are reverse

biased, a very small collector current is obtained which is close to
horizontal axis.
Output V/I Characteristics of CB Configuration
Lecture 17

CE configuration: Structure, Current

gain, Input characteristics
Common Emitter Configuration (CE)
In this configuration input is applied between base and emitter while
output is taken out from collector and emitter. So, emitter of transistor
is common to both input and output.
i) DC Current gain:
• It is the ratio of output current (IC) to the input current (IB).
IC
β=
IB

• Since value of IB << IC. So β >>1. Therefore, current

gain is available in CE configuration

• Value of β varies from 20 to 500.

Expression for Output Current
𝐈𝐂 = 𝛂𝐈𝐄 + 𝐈𝐂𝐁𝐎 1
= 𝜷 + 1 … … … … … .2
𝑰𝑪 = 𝜶 𝑰𝑪 + 𝑰𝑩 + 𝐈𝐂𝐁𝐎 1−𝜶
[IE = IC + IB] Using equation 1 and 2
𝑰𝑪 = 𝜷𝑰𝑩 + 𝜷 + 1 𝑰𝑪𝑩𝑶
𝑰𝑪 = 𝜶𝑰𝑪 + 𝜶𝑰𝑩 + 𝐈𝐂𝐁𝐎
𝑰𝑪 = 𝜷𝑰𝑩 + 𝑰𝑪𝑬𝑶
𝑰𝑪 1 − 𝜶 = 𝜶𝑰𝑩 + 𝐈𝐂𝐁𝐎
𝜶 𝑰𝑪𝑩𝑶 Where ICEO: Collector to
𝑰𝑪 = 𝑰𝑩 + … … … 1 emitter current when base is
1−𝜶 1−𝜶
open and ICEO is given by
𝜶
𝒃𝒖𝒕 =𝜷
1−𝜶 𝑰𝑪𝑬𝑶 = 𝜷 + 1 𝑰𝑪𝑩𝑶
𝜶
+1=𝜷+1
1−𝜶
 Input V/I Characteristics of CE
Configuration

• It is graph between input current (IB) and input

voltage (VBE) at constant output voltage (VCE).

This graph is drawn for active region of BJT.

• By keeping constant VCE, when forward bias at

emitter base junction is increased then graph
between IE and VBE is similar to forward
characteristics of pn junction diode.
Input V/I Characteristics of CE
Configuration

 If this graph is again drawn for some higher value of VCE

a similar graph is obtained with increased knee voltage.
This is due to reduction in IB on increasing reverse bias
at collector base junction.


Input V/I Characteristics of CE
Configuration
Lecture 18

Output characteristics of CE Configuration,

Comparison between different configurations
of BJT on the basis of different parameters,
Numerical based on BJT
Output V/I Characteristics of CE
Configuration

• It is graph between output current IC and output voltage

VCE at constant input current IB. This graph is drawn for

all three operating regions of BJT.

• To draw the graph in active region equation of output

current,
Output V/I Characteristics of CE
Configuration
 Active Region: For given β and IB, IC is dependent on (β +1)I0 which is
more dependent on VCE than in case of CB configuration. So, graph of
active region has some slope showing change in IC on changing VCE.

 Saturation region: When the transistor is switched from active to

saturation region, a large change in collector current for very small
change in collector voltage is obtained in negative direction.

 Cut-Off Region: When both the junctions are reverse biased, a very
small collector current is obtained which is close to horizontal axis.
Output V/I Characteristics of CE
Configuration
Output V/I Characteristics of CE
Configuration
Relation between α and β

IC IC 1 1
α= 𝑎𝑛𝑑 β = = +1
IE IB 𝛼 𝛽

𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶
1 1+β
=
Dividing both sides by IC 𝛼 β

𝐼𝐸 𝐼𝐵 + 𝐼𝐶 α + αβ = β
=
𝐼𝐶 𝐼𝐶
β 1−α =α
𝐼𝐸 𝐼𝐵 𝜶
= +1 𝜷=
𝐼𝐶 𝐼𝐶 1−𝜶
Comparison of Transistor Configuration or
Connections
Ques-1 In a common base connection, the emitter current is
1mA. If the emitter circuit is open, the collector current is
50 μA. Find the total collector current. Given that α = 0.92.
Ques-2: In a common base connection, α = 0.95. The voltage drops
across 2 kΩ resistance which is connected in the collector is 2V. Find the
base current.
Lecture 19

Introduction of FET,
Classification of FET,
Introduction of JFET, Output and
Transfer characteristics of n
channel JFET
BJT has two principle
disadvantage
 It has low input impedance due to Forward biased
emitter junction.
 It has considerable noise level.
 The above problem are overcome by:
 FET has large input impedance by virtue of its construction and
biasing.
 FET is generally much less noisy than BJT

Remember:
BJT is a current controlled device
FET is a Voltage controlled device.
Introduction of FET

 A field-effect transistor (FET) is a three terminal

(namely drain, source and gate) semiconductor device in
which current conduction is by only one type of majority
carriers (electrons in case of an N-channel FET or holes
in a P-channel FET)

 It is also sometimes called the uni-polar transistor.

N- Channel JFET( Junction Field Effect Transistor)

Construction:

• A n-channel JFET have n type base.

• On both side of base two

heavily doped p regions are
formed.

• So two p-n junction is formed

which are internally
connected by a gate terminal.
Other two terminal are drain
and source.
 In JFET structure, the channel is uniformly

doped and it can be modeled as series

combination of equal resistances.

 If current is flowing from drain to source,

the voltage at upper part of the channel is

higher than the lower part.

 So if we apply VDs > 0 and VGS 0, both pn

junctions are reverse biased and very high

input impedance is achieved.

 This reverse bias voltage is not uniform and

decreases as we move downwards.

 So, a non uniform depletion region is formed

at junctions which is wider in upper part than

the lower part of the channel.

Working of n Channel JFET

Its working is divided in two parts:

(1) When VDS>0 and VGS=0
(2) When VDS>0 and VGS<0

1. When VDS>0 and VGS=0:

 Two pn junctions are reverse biased and biasing voltage
is decreasing from top to bottom. So depletion is more on
upper part of the structure than lower part.
 Electrons in channel move towards drain (positive
terminal), so a current ID from drain to source us obtained
 On increasing VDS, ID as well as reverse bias both
increases
Working of n Channel JFET
Working of n Channel JFET
 At certain value of VDS, width of depletion layer become
maximum and drain current become constant. It is called pinch
off condition
 VDS corresponding to pinch-off condition is called pinch off
voltage (VP) and constant drain current is denoted as IDSS.
 After VDS= VP, on increasing VDS, ID remains constant until
reverse breakdown.
 This condition is shown in graph of ID vs VDS at VGS=0V.

(2) When VDS>0 and VGS<0

 Now pinch off condition arrives at lower values of VDS
 The magnitude of saturation current is also smaller than the
magnitude at VGS=0V.
 This condition is shown graphically for different negative values
of VGS
Working of n Channel JFET (Drain
Characteristics)
Output Characteristics (Drain
Characteristics)

 It is graph between output current ID and output voltage VDS at

constant VGS. It can be explained from working of the structure
discussed above.
 For smaller values of VDS, ID VD. So this region of the graph is
called ohmic or linear region.
 In ohmic region the slope of the graph is dependent on VGS. So
FET can be used as voltage controlled resistance.
 After pinch off condition the drain current become constant and
this region of the graph is called saturation region.
Transfer Characteristics

 It is graph between output current ID and input voltage

VGS.
 The relation between ID and VGS can be given as:

 Above equation is also known as Shockley’s equation.

 The transfer curve can be obtained using Shockley’s
equation or from the output characteristics.
Transfer Characteristics
Transfer Characteristics

 Here two graphs are provided, with the vertical scaling in

milliamperes for each graph. One is a plot of ID versus
VDS , while the other is ID versus VGS .
 Using the drain characteristics on the right of the “y”
axis, a horizontal line can be drawn from the saturation
region of the curve denoted VGS =0 V to the ID axis. The
resulting current level for both graphs is IDSS.
 In a similar way for different values of VGS we can note
constant values of ID from output curve.
 By joining all these points curve obtained is called
transfer curve.
Transfer characteristics (From Schokley
Equation)

2
𝐕𝐆𝐒
𝐈𝐃 = 𝐈𝐃𝐒𝐒 1−
𝐕𝐏
• Let IDSS = 8 mA, VP = -4 V
a) VGS = 0V c) VGS = -2V
𝟐 𝟐
𝑽𝑮𝑺 −𝟐
𝑰𝑫 = 𝑰𝑫𝑺𝑺 𝟏− 𝑰𝑫 = 𝟖 𝟏 − = 𝟐 𝒎𝑨
𝑽𝑷 −𝟒
𝟐 d) VGS = -3V
𝟎
𝑰𝑫 = 𝟖 𝟏 − = 𝟖 𝒎𝑨 𝟐
−𝟒 −𝟑
𝑰𝑫 = 𝟖 𝟏 − = 𝟎. 𝟓 𝒎𝑨
−𝟒
b) VGS = -1V
𝟐 e)VGS = -4V
−𝟏
𝑰𝑫 = 𝟖 𝟏 − = 𝟒. 𝟓 𝒎𝑨 𝟐
−𝟒 −𝟒
𝑰𝑫 = 𝟖 𝟏 − = 𝟎 𝒎𝑨
−𝟒
Lecture 20

Use of JFET as VVR,

Different parameters of JFET,
Introduction of DMOSFET,
Output and Transfer
characterics of DMOSFET
 FET as a Voltage Variable Resistor-(VVR):

•FET is a device that is usually operated in the constant-current

portion of its output characteristics.
•But if it is operated on the region prior to pinch-off (that is where
VDS is small, say below 100 mV), it will behave as a voltage-
variable resistor (WE).
• It is due to the fact that in this region drain-to-source resistance
RDS can be controlled by varying the bias voltage VGS.
•In such applications the FET is also referred to as a voltage-
variable resistor or volatile dependent resistor.
JFET as a voltage variable resistance (VVR) or
voltage controlled resistance
JFET works as a variable resistance in ii) At VGS = -2
ohmic region. The resistance of JFET is 𝟏𝟎
𝐫𝐝 = 𝟐
= 𝟏𝟑. 𝟑𝟑𝐊Ώ
given by: −𝟐
𝟏 − −𝟒
𝐫𝐎 So JFET works as variable resistance
𝐫𝐝 = 𝟐
𝐕𝐆𝐒 or voltage-controlled resistance.
𝟏−
𝐕𝐏
Where:
ro = 10 KΏ (Resistance at VGS = 0)
i) At VGS = 0
𝟏𝟎
𝐫𝐝 = 𝟐
= 𝟏𝟎𝐊Ώ
𝟎
𝟏−
−𝟒
Different parameters of JFET

 Transconductance (gm)

 Dynamic Output Resistance

 Amplification Factor
Transconductance (gm) and Its Expression
• Transconductance (gm): It is defined the ratio of change in
drain current (ΔID) and change in gate to source voltage
(ΔVGS) at constant drain to source voltage (VDS).
• Unit of gm is Siemen.
𝜟𝑰𝑫
𝒈𝒎 = | 𝑽𝑫𝑺 = 𝑪𝒐𝒏𝒔𝒕𝒂𝒏𝒕
𝜟𝑽𝑮𝑺
𝒅𝑰𝑫
=
𝒅𝑽𝑮𝑺

Expression for transconductance (gm):

Differentiating equation 1 with respect to VGS
Dynamic Output Resistance

 This is the ratio of change of drain to source voltage

(δVDS) to the change of drain current (δID) at a constant

gate to source voltage (VGS = Constant). The ratio is
denoted as rd.
Amplification Factor

 The amplification factor is defined as the ratio of change

of drain voltage (δVDS) to change of gate voltage (δVGS)

at a constant drain current (ID = Constant).
 There is a relation between transconductance (gm) and

dynamic output resistance (rd) and that can be

established in the following way.
N-Channel Depletion Type MOSFET
Construction:
• n-channel depletion type
MOSFET have p-type
base(substrate). Then two n
region are formed.
• A thin layer of Sio2 (Silicon di
oxide) is deposited. Drain and
source are connected with
metallic contact.
• A n channel is formed between
two n regions. Gate is
insulated from n-channel by
Sio2 layer. So, IG is zero.
 Operation:
• When VDS is increased more and
more electrons move from source
to drain. So current increases. A
condition comes when current
becomes cuuent.
• This condition is called pinch-
off condition. The value of VDS
which established this condition
is called pinch-off voltage (VP).
After pinch-off current becomes
constant.
VDS = +ve and VGS = -ve

• If VGS is increased then holes in

p-type substrate moves towards
the channel.
• So, recombination process
occurs in channel. So, pinch-off
condition comes earlier and
pinch-off voltage decreases in
parabolic manner. This is called
depletion mode.
 VDS = + ve and VGS = + ve
• If positive voltage is applied at gate then electrons
in p-type substrate move towards the channel. So,
number of electrons in channel increases. This is
called enhancement mode.
Characteristics.
It has two types of characteristics.
i) Drain or output characteristics: It is the curve between drain current
(ID) and drain to source voltage (VDS), while gate to source voltage
(VGS) should be constant.
ii) Transfer characteristics:
It is the curve between drain current (ID) and gate to source voltage
(VGS), while drain to source voltage (VDS) should be constant.
Drain or Output Characteristics
Output Characteristics
(Drain Characteristics)

 It is graph between output current ID and output

voltage VDS at constant VGS. It can be explained
from working of the structure discussed above.
 For smaller values of VDS, IDVD. So this region of
the graph is called ohmic or linear region.
 In ohmic region the slope of the graph is
dependent on VGS. So MOSFET can be used as
voltage controlled resistance.
 After pinch off condition the drain current
become constant and this region of the graph is
called saturation region.
Transfer Characteristics

 It is graph between output current ID and input voltage

VGS.
 The relation between ID and VGS can be given as:

 Above equation is also known as Shockley’s equation.

 The transfer curve can be obtained using Shockley’s
equation or from the output characteristics.
Transfer Characteristics
Transfer Characteristics
 Here two graphs are provided, with the vertical scaling in
milliamperes for each graph. One is a plot of ID versus VDS , while
the other is ID versus VGS .
 Using the drain characteristics on the right of the “y” axis, a
horizontal line can be drawn from the saturation region of the
curve denoted VGS =0 V to the ID axis. The resulting current level
for both graphs is IDSS.
 In a similar way for different values of VGS we can note constant
values of ID from output curve.
 By joining all these points curve obtained is called transfer curve.
Lecture 21

Introduction of EMOSFET and its

output and transfer characteristics)
, Comparison between BJT & FET &
Comparison between JFET,
DMOSFET & EMOSFET
N-Channel Enhancement Type MOSFET

• n-channel Enhancement type

MOSFET has p type substrate.
• Then two n regions are
formed, A thin layer of Sio2
(Silicon die oxide) is
deposited.
• Drain and source are
connected with the help of
metallic contact. There is no
channel between two n
regions.
Operation:
i) VDS = + ve, VGS = 0
• If VDS is increased then
no current will flow
because the is no
channel i.e. ID = 0
ii) VDS = + Ve , VGS = +Ve
• If positive voltage is applied
at gate then electron in p
type moves towards the gate
and holes moves away from
the gate. Till 2V no channel
is formed. But after 2V
channel is formed. This 2V
is called threshold voltage
(VT). If VGS is further
increased then ID
continuously increases. This
is called enhancement
MOSFET.
It has two types of characteristics.

i) Drain or output characteristics: It is the curve

between drain current (ID) and drain to source
voltage (VDS), while gate to source voltage (VGS)
should be constant.

ii) Transfer characteristics:

It is the curve between drain current (ID) and gate to
source voltage (VGS), while drain to source voltage
(VDS) should be constant.
Output Characteristics (Drain
Characteristics)

 It is graph between output current ID and output voltage

VDS at constant VGS. It can be explained from working of
the structure discussed above.
 For smaller values of VDS, ID ∝ VD. So this region of the
graph is called ohmic or linear region.
 In ohmic region the slope of the graph is dependent on
VGS. So MOSFET can be used as voltage controlled
resistance.
 After pinch off condition the drain current become
constant and this region of the graph is called saturation
region.
Output Characteristics (Drain
Characteristics)
Transfer Characteristics
 It is graph between output current ID and input voltage
VGS.
 The relation between ID and VGS can be given as:
ID = k(VGS – VT )2
 Here k is a constant dependent on the construction of
device
 The transfer curve can be obtained using above
equation or from the output characteristics.
 Here VT is called threshold voltage. It is minimum
positive voltage required for n channel EMOSFET to
start conduction through n channel.
Transfer Characteristics
 Transfer Characteristics
 Here two graphs are provided, with the vertical scaling in
milliamperes for each graph. One is a plot of ID versus VDS , while
the other is ID versus VGS .
 Using the drain characteristics on the right of the “y” axis, a
horizontal line can be drawn from the saturation region of the
curve denoted VGS =0 V to the ID axis. The resulting current level
for both graphs is IDSS.
 In a similar way for different values of VGS we can note constant
values of ID from output curve.
 By joining all these points curve obtained is called transfer curve.
Difference Between BJT and FET(JFET, MOSFET)
S.N BJT JFET
1 It is bipolar device i.e. It is unipolar device i.e. operation
operation depends on depends only on majority carrier.
majority and minority
carrier both.
2 Current controlled device Voltage controlled device i.e. output
i.e. output is controlled by is controlled by voltage.
current.
3 Input resistance is very low. Input resistance is very high.
4 Temperature dependent Temperature independent due to
due to minority carriers. absence of minority carriers.

5 Power consumption is high. Power consumption is low.

6 More noisy Less noisy
7 Cost is low. Cost is high
Comparison between EMOSFET & DMOSFET