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Design and Implementation of An S-Band Receiver For Small Satellite Based On The Manufactured Subsystems

This article presents the design and implementation of an S-band receiver for small satellites, operating between 1.9 GHz and 3.0 GHz. The receiver features a multi-stage IF amplifier with automatic gain control, achieving a gain of 78 dB, a dynamic range of 80 dB, and a sensitivity of -110 dBm at 2.15 GHz. Its flexible structure and low-cost characteristics make it suitable for small satellites and ground stations.

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0% found this document useful (0 votes)
3 views9 pages

Design and Implementation of An S-Band Receiver For Small Satellite Based On The Manufactured Subsystems

This article presents the design and implementation of an S-band receiver for small satellites, operating between 1.9 GHz and 3.0 GHz. The receiver features a multi-stage IF amplifier with automatic gain control, achieving a gain of 78 dB, a dynamic range of 80 dB, and a sensitivity of -110 dBm at 2.15 GHz. Its flexible structure and low-cost characteristics make it suitable for small satellites and ground stations.

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ali cherif
Copyright
© © All Rights Reserved
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VNU Journal of Science: Mathematics – Physics, Vol. 40, No.

3 (2024) 77-85

Original Article
Design and Implementation of an S-band Receiver
for Small Satellite Based on the Manufactured Subsystems

Bui Thi Ha1,2,*, Nguyen Phan Kien Cuong3, Bach Gia Duong1
1
VNU University of Engineering anf Technology,144 Xuan Thuy, Cau Giay, Hanoi, Vietnam
2
Vietnam National Space Center, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Vietnam
3
Posts and Telecommunications Institute of Technology, 122 Hoang Quoc Viet, Cau Giay, Hanoi, Vietnam

Received 14 May 2024


Revised 5 June 2024; Accepted 29 July 2024

Abstract: In this work the design and implementaion of a receiver for small satellites in range of
1.9 GHz to 3.0 GHz frequency were presented. We concentrated on developing a new architecture
for receiving satellites in challenging environments and integrated some of the author’s previously
published designs. By using the protected mechanism for RF circuit of receiver, a mutil-stage in IF
amplifier and automatic gain control in IF amplifer has been designed, this receiver has a higher
gain (78 dB), a larger dynamic ranger (80 dB), a high stability and sensitivity (110 dBm) at 2.15
GHz frequency. The receiver module works well; and due to the flexible structure, easy assembly
and low-cost characteristics, it can be applied for small satellites and ground stations.
Keywords: LNA, mixer, S-band, receiver, IF amplifier.

1. Introduction*

In recent years, space technologies have become increasly impotant for developping economy –
society and security of a country. They are used in weather forecast, global positioning systems, maps,
education, science, communication, etc. Satellite technique is a part of the space technology. Normally,
a satellite has seven important subsystems, such as structure, thermal, payload, attitude determination
and control, communication, electrical power and command & data handling.
A communication subsystem provides link between satellite and ground station. It transmits
telementry data, payload data from satellite to ground station; tele-command data from ground to
satellite. The communication subsystem consists of transmitter and receiver.
________
* Corresponding author.
E-mail address: [email protected]
https//doi.org/10.25073/2588-1124/vnumap.4933
77
78 B. T. Ha, B. G. Duong / VNU Journal of Science: Mathematics – Physics, Vol. 40, No. 3 (2024) 77-85

Previous paper, authors has published a “the transmitter of Nanosatellite with new configuration”
articles. By combining heterostructure field effect transistors (HFET) and laterally diffused metal–
oxide–semiconductor (LDMOS) technology and using flexible structure and flexible control method,
this research obtained 60 dB gain power when input is -14 dBm, output power is 46 dBm (more than 25
W) in 2,1 GHz -2,3 Ghz frequency; phase noise is -80 dBc/Hz at 100 KHz offset frequency [1]. In this
paper, authors present a receiver of small satellite, which was compatible with transmitter in [1].
Each receiver has different characteristic features dependent on user’s purpose. It must respond to
requirements of the satellite system, such as noise figure, bandwidth, dynamic range, sensitivity, gain,
stability. Designer of the receiver need to understand the tradeoff between accuracy, bandwidth and
received power in the receiver, as well asto balance the targets. Comperingto the previous receiver, the
protection problem of RF circuit was interested in the design. Some designers of the low noise amplifier
(LNA) have used complementary metal-oxide-semiconductor (CMOS) technology and Electro Static
Discharge (ESD) circuit to protect against high input power. As reported in [2], the ESD protection
structure and LNA circuit were designed and implemented in 0,18 𝜇𝑚 SiGe BiCMOS technology.
However, this ESD protection structure affects the performance of radio frequency integrated circuit
(RFICs) [2]. Lin et al., [3] resolved this problem by stacking diodes with embedded silicon-controlled
rectifier (SDeSCR) and SCR-based power clamp to protect the LNA. This structure is fabricated in
CMOS technology.
Shabana has designed a satellite RF receiver at Ku-band for tropical region [4] with describing a
basic component of receiver. However, the obtained result (namely LNA with 8.9 dB gain, bandwidth
of 86 MHz) is not expectative.
Solution to low gain and narrow bandwidth is integrated in multi-stage. This novel design is a new
configuration in a module. There are protection RF circuit, multi-stage and automatic gain control. This
integrate module makes the receiver become better. There are highly sensitive, high power output,
stability operation, and larger dynamic range).
This receiver consists of a LNA, followed by Mixer + LO, IF Amplifier was integrated AGC. This
module is showed in Figure 1.

Figure 1. Block diagram of receiver module.

In this work we present a new configuration of a reciever. There are LNA with protection mechanism
and multi-stage, down conversion with PLL phase lock loop and intermediate frequency (IF) amplifier
with automactic gain control (AGC).
B. T. Ha, B. G. Duong / VNU Journal of Science: Mathematics – Physics, Vol. 40, No. 3 (2024) 77-85 79

2. Design and Simulation

2.1. Low Noise Amplifier (LNA)

A signal is received through antenna, going to Low Noise Amplifier (LNA). Here, signal is still
weak, so a signal amplitude is amplified. LNA operates well when it responds system’s requirement. A
good LNA is that has high gain and low noise figure. When deigning circuits, one need to a have good
impedance matching, good electronic components. Special PCB layout is very important.
Besides, the protection of RF circuit is nesecsary. Some methods were used in published works, f.i.
“Compact ESD protection Design for CMOS Low-Noise Amplifier”. The traditional Electro Static
Discharge (ESD) protection circuit, dual diodes (DD) with MOS-based power clamp is a traditional
onchip ESD. This method has disadvantages of large parasitic capacitance, large turn-on resistance,
large layout area and large leakage current. To overcome these disadvantages, the “Compact ESD
protection Design for CMOS Low-Noise Amplifier” used stacked diodes with embedded silicon-
controlled rectifier (SdeSCR) and SCR-based power clamp power to protect the LNA. Specially, this
protection method does not affect RF sigmal. This method was applied in CMOS technology.
In this design, LNA used PHEMT SPF-2086 of Sirenza with characteristics: frequency operation at
0.1 – 6 GHz with pHEMT GaAs FET, protection mechanism with PIN diode.
Herein, impedance matching is with quarter-wave transformer, with Zin = Z0*(2.136 + j2.199); Zout
= Z0*(0.438 + j1.099). The LNA was designed and simulated at ADS softwave. The schema is showed
in Figure 2.

Figure 2. The schematic of LNA impedance matching.

The layout and manufactured LNA is showed in Figure 3 and Figure 4.

Figure 3. Layout of LNA circuit.


80 B. T. Ha, B. G. Duong / VNU Journal of Science: Mathematics – Physics, Vol. 40, No. 3 (2024) 77-85

Figure 4. The fabricated LNA.

To optimazie LNA, two stages were integrated as shown in Figure 5.

Figure 5. Schematic of 2-stages LNA.

2.2. Mixer

Figure 6. Schematic of mixer.


B. T. Ha, B. G. Duong / VNU Journal of Science: Mathematics – Physics, Vol. 40, No. 3 (2024) 77-85 81

The mixer with output I/Q was designed and manufactured in 2019 as reported in [5]. By this module
RF signals are converted to IF ones. The mixer used LT5575; The module generates local oscillator
(LO) signals for mixer used phase lock loop (PLL) with ADF4113 and microcontroller AT89C51.
The schema of the mixer is illustrated in Figure 6. The module generating LO used phase lock loop
(PLL) is showed in the Figure 7.

Figure 7. PLL with ADF4113 and microcontroller AT89C51.

2.3. Intermediate Frequency Amplifier (IF Amplifier)

Figure 8. Schemetic of 1-stage IF amplifier.

IF amplifier is an important part of the receiver. It has main role in amplifier signal, dynamic range
and bandwidth of the receiver. Multi-stage structure and amplifier gain control mechanism were
82 B. T. Ha, B. G. Duong / VNU Journal of Science: Mathematics – Physics, Vol. 40, No. 3 (2024) 77-85

combined in this design. The IF amplifier has three stages. Each stage was designed with different
device/component. To obtain a largest gain power, it is neccessary to perform the impedance matching
at output/input of each circuit.
This design consists of three-stages amplifier: the first stage with AD8009, the second-stage with
AD8350, the third-stage with SPF3043. Figure 8 and Figure 9 show a part of the IF amplifier.

Figure 9. Board circuit of 1-stage IF amplifier.

3. Measurements Results

Low Noise Amplifier (LNA)

Figure 10. Set of measurement LNA. Figure 11. Measurement result of LNA.

By using SPF 2086 for LNA circuit, the impedance matching in input/output is designed. This
module (one stage LNA) gives 19.5 dB gain at 2.15 GHz . The noise figure is less than 1.5 dB. This
LNA has a low noise figure, high gain.
B. T. Ha, B. G. Duong / VNU Journal of Science: Mathematics – Physics, Vol. 40, No. 3 (2024) 77-85 83

Mixer

Figure 12. Set of measurement Mixer. Figure 13. Measurement result of Mixer.

By using the down converter, RF signals 2.15 GHz are converted into intermediate frequency of 100
MHz. This module combined LO phase lock loop as above design, one can make desired IF frequency.
The strength of the signal is not significantly reduced (input signal is -30 dBm, output signal is -23,1
dBm). It is also important factors for designing receiver of satellite.
IF amplifier

Figure 14. Set of measurement IF amplifier. Figure 15. Measurement result of IF amplifier.

By the IF amplifier, one can increase the power of the signal for further processing. The amplified
signal before going with input power of 40 dBm, output power is of 5.4 dBm. Losses in the
84 B. T. Ha, B. G. Duong / VNU Journal of Science: Mathematics – Physics, Vol. 40, No. 3 (2024) 77-85

cable/attenuator is 5 dBm. The measurement results proved that the designed module is a good IF
amplifier.
Integrated receiver module
The receiver module is integrated and experimentally measured, as seen in Figure 16. This module
havs I/Q channel output, large output power, low noise figure and high sensitivity. These parameters are
illustrated in Table 1. At 2,15 GHz, IF frequency of 100 MHz, gain of 78 dB, sensitivity of 110 dBm
and dynamic range of 80 dB were obtained.

Figure 16. Measurement of receiver module.

Table 1. The parameter of module receiver

Parameter
Frequency range, MHz 1875 MHz – 3000 MHz
Bandwidth, MHz 1125 MHz
IF frequency, MHz 100 MHz
P_in, dBm -70 dBm
P_out, dBm 8 dBm
Gain, dB 78 dB
Sensitivity, dBm -110 dBm
Dynamic range, dB 80 dB

4. Conclusion

In summary, we presented the design and implementaion of a receiver for small satellites in range
of 1.9 GHz to 3.0 GHz frequency. By using the protected mechanism for RF circuit of receiver, we have
designed mutil-stage in IF amplifier and automatic gain control in IF amplifer, this receiver obtain a
higher gain (78 dB), a larger dynamic ranger (80 dB), a high stability and sensitivity (110 dBm) at 2.15
GHz frequency. These results proved that this receiver module works stably and efficiently. In addition,
this module has flexible structure, easy assembly, low cost characteristics. So, it can be applied for small
satellites and ground stations.
B. T. Ha, B. G. Duong / VNU Journal of Science: Mathematics – Physics, Vol. 40, No. 3 (2024) 77-85 85

Acknowledgments

Our deep appreciation to Vietnam National Space Center (Vietnam Academy of Science and
Technology) and VNU University of Engineering and Technology (Vietnam National University,
Hanoi).

Reference
[1] B. T. Ha, T. C. Doan, Bach Gia Duong, Design and Implementation of an S-band Transmitter for Nanosatellites
with New Configuration, Indonesian Journal of Electrical Engineering and Computer Science, Vol. 25, No. 2, 2022,
pp. 1067-1077, http://doi.org/10.11591/ijeecs.v25.i2.pp1067-1077.
[2] G. Chen, X. Wang, S. Fan, H. Tang, L. Lin, A. Wang, EDS-Induced Noise to Low Noise Amplifier Circuits in
BiCMOS, Tsinghua Science and Technology, Vol. 15, No. 3, 2010, pp. 259-264, http://doi.org/1016/S1007-
0214(10)70059-6.
[3] C. Y. Lin, G. L. Huang, M. T. Lin, Compact ESD Protection Design for CMOS Low-Noise Amplifier, IEEE
Transactions on Electron Devides, Vol. 67, No. 1, pp. 33-39, http://doi.org/10.1109/TED.2019.2954739.
[4] A. A. A. Shabana, Design of a Satellite RF Receiver at Ku-band for Tropical Region, International Islamic
University Malaysia, February, 2011.
[5] B. T. Ha, T. C. Doan, N. T. Dat, B. G. Duong, Research, Design, Fabrication Receiver of Ground station for
Vietnamese Satellite at S Band with Digitalizing I/Q Channel at Intermediate Frequency, 2019 International
Conference on Advanced Technologies for Communication (ATC), Hanoi, Vietnam, 2019, pp. 179-184,
http://doi.org/10.1109/ATC.2019.8924534.
[6] D. M. Poza, Microwave Engineering, 4th ed, John Wiley & Sons.
[7] Linear Technology, LT5527 Datasheet, https://www.analog.com/media/en/technical-documentation/data-
sheets/5527fa.pdf (accessed on: April 15th, 2024).
[8] SPF-2086 Datasheet, https://www.digikey.com/htmldatasheets/production/110264/0/0/1/spf-2086tk.html
(accessed on: April 15th, 2024).
[9] L. H. Abderrahmane, M. Benyettou, M. Sweeting, Designing an S Band Receiver for LEO Applications,
Proceedings of the 11th WSEAS International Conference on Communication, Agios Nikolaos, Crete Island,
Freece, Vol. 11, pp. 306-312.
[10] K. Chang, RF and Microwave Wireless Systems, Chapter Five, Copỷight 2000 Fohn Wiley & Sons, Inc. ISBNs:
0-471-35199-7 (Hardback).
[11] B. T. Ha, B. G. Duong, Research, Design and Fabrication Microwave Modules of Receiver for NanoDragon
Satellite at S Band, VNU Journal of Science: Mathematics – Physics, Vol. 35, No. 2, 2019, pp. 50-59,
https://doi.org/10.25073/2588-1124/vnumap.4330.

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