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Assignment - 1 ELE312

This document is an assignment for Electronics Engineering students focusing on analog circuits and MOSFET operations. It includes five questions that require calculations related to MOSFET characteristics, including threshold voltage, drain current, and circuit design. The assignment aims to deepen understanding of MOSFET behavior in various operating regions.

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34 views4 pages

Assignment - 1 ELE312

This document is an assignment for Electronics Engineering students focusing on analog circuits and MOSFET operations. It includes five questions that require calculations related to MOSFET characteristics, including threshold voltage, drain current, and circuit design. The assignment aims to deepen understanding of MOSFET behavior in various operating regions.

Uploaded by

حكم وأقوال
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Faculty of Engineering

2st Semester Electronics Engineering & Communications


2023-2024 Program
Energy Engineering Program

Analog Circuits (ELE312)


Assignmnet-1

Answer the Following Questions.

1-A particular MOSFET for which Vtn= 0.5 V and kn(W/L) = 1.6
mA/V2 is to be operated in the saturation region. If I(D) is to be 50
μA, find the required V(GS) and the minimum required V(DS).
Repeat for iD= 200 μA.

2-A particular n-channel MOSFET is measured to have a drain current


of 0.4 mA at V(GS)= V(DS)= 1 V and of 0.1 mA at V(GS)= V(DS)=
0.8 V. What are the values of kn and Vt for this device to be operated
in the saturation region?

3-An NMOS transistor, operating in the linear-resistance


region with V(DS)= 50 mV, is found to conduct 25 μA for
V(GS)= 1 V and 50 μA for V(GS)= 1.5 V. What is the apparent
value of threshold voltage Vt? If kn¯= 50 μA/V2, what is the device
W/L ratio? What current would you expect to flow with V(GS)= 2
V and V(DS)= 0.1 V? If the device is operated at V(GS)= 2 V, at
what value of V(DS) will the drain end of the MOSFET channel just
reach pinch-off, and what is the corresponding drain current?

4-The table above lists 10 different cases labeled (a) to


(j) for operating an NMOS transistor with Vt= 1 V. In each
case the voltages at the source, gate, and drain (relative to the
circuit ground) are specified. You are required to complete the
table entries. Note that if you encounter a case for which V(DS)
is negative, you should exchange the drain and source before
solving the problem. You can do this because the MOSFET
is a symmetric device.
5-Design the circuit of the Fig. to establish a drain current of 0.1 mA
and a drain voltage of +0.3 V. The MOSFET has Vt= 0.5 V,
μnCox= 400 μA/V2, L = 0.4 μm, and W = 5 μm. Specify the required
values for RS and RD.

With Best Wishes


Assiatnat Prof. Ahmed Mosaad Mabrouk
T.A. Ismael Nour El-Dien

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