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FZT951

The FZT951 is a 60V PNP medium power transistor in SOT223 packaging, featuring a high continuous collector current of -5A and a low saturation voltage. It is compliant with AEC-Q101 standards, RoHS, and is a 'Green' device, free from halogens and antimony. The document includes detailed specifications, mechanical data, and ordering information for various product configurations.
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0% found this document useful (0 votes)
38 views7 pages

FZT951

The FZT951 is a 60V PNP medium power transistor in SOT223 packaging, featuring a high continuous collector current of -5A and a low saturation voltage. It is compliant with AEC-Q101 standards, RoHS, and is a 'Green' device, free from halogens and antimony. The document includes detailed specifications, mechanical data, and ordering information for various product configurations.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Green

FZT951
60V PNP MEDIUM POWER TRANSISTOR IN SOT223

Features Mechanical Data


• BVCEO > -60V • Case: SOT223
• IC = -5A High Continuous Collector Current • Case Material: Molded Plastic. “Green” Molding Compound.
• ICM = -15A Peak Pulse Current UL Flammability Rating 94V-0
• Low Saturation Voltage VCE(SAT) < -140mV @ -1A • Moisture Sensitivity: Level 1 per J-STD-020
• RCE(SAT) = 55mΩ for a Low Equivalent On-Resistance • Terminals: Finish—Matte Tin Plated Leads, Solderable per
• hFE Specified up to -10A for a High Gain Hold-Up MIL-STD-202, Method 208
• Complementary NPN Type: FZT851 • Weight: 0.112 grams (Approximate)
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)

SOT223 C

E
Top View
Top View Device Symbol Pin-Out

Ordering Information (Notes 4 & 5)


Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
FZT951TA AEC-Q101 FZT951 7 12 1000
FZT951TC AEC-Q101 FZT951 13 12 4000
FZT951QTA Automotive FZT951 7 12 1000
FZT951QTC Automotive FZT951 13 12 4000
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information
SOT223

FZT 951 = Product Type Marking Code


YWW

FZT YWW = Date Code Marking


Y or Y = Last Digit of Year (ex: 8 = 2018)
951 WW or WW = Week Code (01–53)

FZT951 1 of 7 September 2018


Datasheet Number: DS33179 Rev. 7 - 2 www.diodes.com © Diodes Incorporated
FZT951

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)


Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -7 V
Continuous Collector Current IC -5 A
Peak Pulse Current ICM -15 A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)


Characteristic Symbol Value Unit
3.0
(Note 6)
Power Dissipation 24 W
PD
Linear Derating Factor 1.6 mW /°C
(Note 7)
12.8
(Note 6) RϴJA 42
Thermal Resistance, Junction to Ambient
(Note 7) RϴJA 78 °C/W
Thermal Resistance Junction to Lead (Note 8) RϴJL 8.8
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

ESD Ratings (Note 9)


Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge—Human Body Model ESD HBM 8000 V 3B
Electrostatic Discharge—Machine Model ESD MM 400 V C
Notes: 6. For a device mounted with the collector lead on 52mm × 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
7. Same as Note 6, except the device is mounted on 25mm × 25mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

FZT951 2 of 7 September 2018


Datasheet Number: DS33179 Rev. 7 - 2 www.diodes.com © Diodes Incorporated
FZT951

Thermal Characteristics and Derating Information

10 VCE(sat) 3.0

Max Power Dissipation (W)


-IC Collector Current (A)

Limit
2.5 52mmX52mm
single sided 2oz Cu
1 DC 2.0
1s 1.5
100ms
100m 10ms 1.0
Single Pulse. Tamb=25°C
1ms 25mmX25mm
52mmX52mm 0.5
100µs single sided 1oz Cu
single sided 2oz Cu
10m 0.0
100m 1 10 100 0 20 40 60 80 100 120 140 160
-VCE Collector-Emitter Voltage (V) Temperature (°C)
Safe Operating Area Derating Curve

52mmX52mm Single Pulse. Tamb=25°C


Max Power Dissipation (W)

40
Thermal Resistance (°C/W)

single sided 2oz Cu 52mmX52mm


100
single sided 2oz Cu
30
D=0.5
20
10
D=0.2 Single Pulse
10
D=0.05
D=0.1
0 1
100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s) Pulse Width (s)
Transient Thermal Impedance Pulse Power Dissipation

FZT951 3 of 7 September 2018


Datasheet Number: DS33179 Rev. 7 - 2 www.diodes.com © Diodes Incorporated
FZT951

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)


Characteristic Symbol Min Typ. Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -100 -140 — V IC = -100µA
Collector-Emitter Breakdown Voltage (Note 10) BVCER -100 -140 — V IC = -1µA, RB ≤ 1kΩ
Collector-Emitter Breakdown Voltage (Note 10) BVCEO -60 -90 — V IC = -10mA
Emitter-Base Breakdown Voltage BVEBO -7 -8 — V IE = -100µA
<-1 -50 nA VCB = -80V
Collector Cut-Off Current ICBO —
— -1 µA VCB = -80V, TA = +100°C
<-1 -50 nA VCE = -80V, R ≤ 1kΩ
Collector Cut-Off Current ICER —
— -1 µA VCE = -80V, TA = +100°C
Emitter Cut-Off Current IEBO — <1 -10 nA VEB = -6V
100 200 — IC = -10mA, VCE = -1V
100 200 300 IC = -2A, VCE = -1V
DC Current Transfer Static Ratio (Note 10) hFE —
75 90 — IC = -5A, VCE = -1V
10 25 — IC = -10A, VCE = -1V
— -20 -50 IC = -100mA, IB = -10mA
— -85 -140 IC = -1A, IB = -100mA
Collector-Emitter Saturation Voltage (Note 10) VCE(SAT) mV
— -155 -210 IC = -2A, IB = -200mA
— -370 -460 IC = -5A, IB = -500mA
Base-Emitter Saturation Voltage (Note 10) VBE(SAT) — -1080 -1240 mV IC = -5A, IB = -500mA
Base-Emitter Turn-On Voltage (Note 10) VBE(ON) — -935 -1070 mV IC = -5A, VCE = -1V
IC = -100mA, VCE = -10V,
Transitional Frequency (Note 10) fT — 120 — MHz
f = 50MHz
Output Capacitance COBO — 74 — pF VCB = -10V, f = 1MHz
tON — 82 — VCC = -10V, IC = -2A,
Switching Time ns
tOFF — 350 — -IB1 = IB2 = -200mA
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

FZT951 4 of 7 September 2018


Datasheet Number: DS33179 Rev. 7 - 2 www.diodes.com © Diodes Incorporated
FZT951

Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

FZT951 5 of 7 September 2018


Datasheet Number: DS33179 Rev. 7 - 2 www.diodes.com © Diodes Incorporated
FZT951

Package Outline Dimensions


Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT223 (Type DN)


D

b2
C

SOT223 (Type DN)


Dim Min Max Typ
A -- 1.70 --
E1 E A1 0.01 0.15 --
A2 1.50 1.68 1.60
Gauge
b 0.60 0.80 0.70
Plane b2 2.90 3.10 --
0.25 c 0.20 0.32 --
Seating D 6.30 6.70 --
Plane
L
E 6.70 7.30 --
e b
E1 3.30 3.70 --
e -- -- 2.30
e1 e1 -- -- 4.60
L 0.85 -- --
All Dimensions in mm
A A1

A2

Suggested Pad Layout


Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT223 (Type DN)


X1

Y1

Dimensions Value (in mm)


C 2.30
C1 Y2 C1 6.40
X 1.20
X1 3.30
Y 1.60
Y1 1.60
Y2 8.00
Y

X C

FZT951 6 of 7 September 2018


Datasheet Number: DS33179 Rev. 7 - 2 www.diodes.com © Diodes Incorporated
FZT951

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2018, Diodes Incorporated

www.diodes.com

FZT951 7 of 7 September 2018


Datasheet Number: DS33179 Rev. 7 - 2 www.diodes.com © Diodes Incorporated

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