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Bec602 Assignment1

The document outlines an assignment for the VLSI Design and Testing course at Bearys Institute of Technology, detailing various tasks related to digital circuit design and analysis. It includes schematic drawings, explanations of components like pass transistors and transmission gates, and discussions on non-ideal effects in MOS transistors. Additionally, it covers topics such as CMOS inverter characteristics, body effect, and fabrication processes for nMOS and pwell technologies.

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suryawanshinishi
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19 views1 page

Bec602 Assignment1

The document outlines an assignment for the VLSI Design and Testing course at Bearys Institute of Technology, detailing various tasks related to digital circuit design and analysis. It includes schematic drawings, explanations of components like pass transistors and transmission gates, and discussions on non-ideal effects in MOS transistors. Additionally, it covers topics such as CMOS inverter characteristics, body effect, and fabrication processes for nMOS and pwell technologies.

Uploaded by

suryawanshinishi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Bearys Institute of Technology, Mangalore

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING


ASSIGNMENT -1
Semester: 6 Date: 03-04- 2025
Subject: VLSI DESIGN and Testing (BEC602)
1. Draw the schematic of inverter, 2input NAND gate and mention the switch
states (on/ OFF) for the various combination of inputs.
AND Draw the schematic of Y’=(A+B+C).D
2. Write a note on Pass Transistors and Transmission Gates AND Draw the
Schematic of 2X1 Multiplexer using transmission gate and explain.
3. Draw the circuit of D Latch built mux and inverters and explain the working
with waveform
4. . Draw the circuit of D ff built from mux and inverters and explain the
working with waveform AND Draw and explain MOS structure
demonstrating (a) accumulation, (b) depletion, and (c)inversion with
applied potentials
5. . Name the non ideal IV effects AND Derive the expression for Linear and
saturation current for nMOS transistor under ideal
6. . write a note on Channel Length Modulation with equation
7.. Write the non-ideal drain current in the linear and saturation region with
velocity saturation and explain AND Write the inverter summary of
operation.
8. obtain the CMOS inverter DC characteristics with graphical method
9. Sketch the stick diagram for CMOS xor gate
10. what is body effect, Write the equation for the threshold voltage and
explain each term in it
11. Consider the nMOS transistor in a 65 nm process with a nominal threshold
voltage of 0.3 V and a doping level of 8 × 1017 cm–3. The body is tied
to ground with a substrate contact. How much does the threshold
change at room temperature if the source is at 0.6 V instead of 0?
12. Demonstrate with the figure the nMOS transistor with cutoff, Linear and
Saturation regions of operations .
13. Compare CMOS and nMOS
14. Draw the conduction characteristics of MOS transistors

15. Derive the vin equation in region C for CMOS inverter


16. Write a note on Beta ration effect on inverter
17. Write a note noise margin
18. What is latch up and how to prevent it
19. Draw and explain Fabrication steps for silicon gate nMOS
20. Draw and explain pwell process in detail

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