Name: No.: Score: .
’15 1학기 물리전자 중간고사
[Midterm Examination]
- 주의 사항 (Notice) -
- 휴대폰 및 계산기 등 전자기기 사용 금지.
(Do not use any electronic devices.)
- 답안지 외 연습장 사용 금지.
(Do not use any paper except this problem sheets.)
- 풀이 과정 또는 답을 선택한 근거를 꼭 적을 것.
풀이 과정 또는 답에 대한 근거를 적지 않으면 감점임.
(You should describe how you got to the solution, otherwise you
may not get points.)
- True/False 문제는 답이 틀리면 3점씩 감점되니 주의할 것.
(3 points will be subtracted for every wrong answer in True/False
problems.)
Score:
1. Fill in the blanks with T if the statement is true, otherwise F. ( +3 points for right answer, -3 points for wrong answer per
each. )
① The number of nearest neighboring atoms in FCC structure is 10. _________________________________ ( )
② Arsenic is an acceptor in silicon. ____________________________________________________________ ( )
③ The carrier concentration of p-type silicon increases as temperature rises from 0K to 100K. ______________ ( )
④ The carrier concentration of insulator is lower than that of semiconductor. __________________________ ( )
⑤ The conductivity of silicon decreases as doping concentration increases. ______________________________ ( )
⑥ Under equilibrium condition, electron drift current in an n-type semiconductor flows from heavily-doped region to
moderately-doped region. _____________________________________________________________________ ( )
⑦ The minority carrier lifetime increases as the trap concentration increases. ___________________________ ( )
⑧ The valence band of silicon originates from 3s and 3p atomic orbitals. ______________________________ ( )
⑨ Impact ionization occurs only when the doping concentration is very high. ____________________________ ( )
⑩ The recombination of electron and hole in silicon mostly generates photon with the bandgap energy. _______ ( )
Score:
2. Find amorphous structure among the figures shown below. ( 3 points )
① ② ③
3. Find the atomic concentration of the crystal shown below. a =4Å ( 3 points )
① 1×1022 /cm3
② 1.25×1022 /cm3
③ 1.6×1022 /cm3
④ 6.4×1022 /cm3
⑤ 1×1023 /cm3
⑥ 1.25×1023 /cm3
⑦ 1.6×1023 /cm3
⑧ 6.4×1023 /cm3
4. A silicon wafer is uniformly doped n-type with ND = 2×1015 /cm3. At T = 550 K, what is the equilibrium
electron concentration? ni = 2×1015 /cm3 at T = 550 K. ( 5 points )
① 2×1015 /cm3 ( )
② 1 + 3 1015 / cm3 ( )
③ 1 + 2 1015 / cm3 ④ 3 10 / cm
15 3
⑤ 4×1015 / cm3 ( )
⑥ 1 + 5 1015 / cm3 ( )
⑦ 2 + 2 2 1015 / cm3 ⑧ 5 1015 / cm3
Score:
5. Find an equation that provides the hole concentration in the valence band. ( 5 points )
p = gV (E )[1 − f (E )]dE p = gV (E ) f (E )dE
EV EV
① ②
− −
p = gV (E )[1 − f (E )]dE p = gV (E ) f (E )dE
EV EV
③ ④
0 0
p = g C (E ) f (E )dE
⑤ p = g C (E )[1 − f (E )]dE ⑥
0 0
⑦ p = g C (E )[1 − f (E )]dE ⑧ p = g C (E ) f (E )dE
EC EC
6. Find the resistivity of silicon that is uniformly doped with both boron and phosphorous. Boron concentration
is 3×1015 /cm3 and phosphorous concentration is 2×1015 /cm3 respectively. ( 5 points )
① 14 Ωcm ② 10.5 Ωcm ③ 4.5 Ωcm ④ 1.35 Ωcm
⑤ 14 Ω ⑥ 10.5 Ω ⑦ 4.5 Ω ⑧ 1.35 Ω
Score:
7. Find a figure that has nothing to do with a n-type silicon. ( 4 points )
① ② ③ ④
8. The absorption coefficients of various
semiconductor materials are given in the
right figure. Find the bandgap energy of
GaAs. h = 4.14×10-15 eV·s, c = 3×108
m/s, k = 8.62×10-5 eV/K ( 5 points )
① 0.67eV
② 1.1eV
③ 1.4eV
④ 3.0eV
Score:
9. The energy band diagram of a silicon sample maintained at 300K is shown in the figure below. Answer the questions
based on the energy band diagram.
Ec
Ei
EG/4
EF
EG/4
Ev
0 L/2 L
① Sketch the electric field (E) inside the semiconductor as a function of x. ( 3 points )
0 x
L/2 L
② Find the maximum and the minimum values of the electric field inside the semiconductor . ( 4 points )
③ Sketch ln(n) versus x and find the maximum and the minimum values of ln(n). ( 3 points )
ln(n)
ln(ni)
0 x
L/2 L
Score:
10. Consider the following energy band diagram. Take the semiconductor represented to be Si maintained at 300K with
Ei – EF = EG/4 at x = 0 and EF – Ei = EG/4 at x = ±L .
① Sketch the electrostatic potential (V) inside the semiconductor as a function of x. ( 3 points )
x
-L L
② Sketch the electric field (E) inside the semiconductor as a function of x. ( 3 points )
x
-L L
③ Indicate the direction of electron drift current and diffusion current at x = ±L/2. ( 4 points )
③ x = -L/2 x = +L/2
JN.Drift
JN.Diffusion
Score:
11. A p-type silicon wafer is first illuminated for a time t >> n with light which generates GL0 electron-hole pairs per cm3-sec
uniformly throughout the volume of the silicon (GL = GL0). At time t = 0 the light intensity is increased, making GL = 3GL0
for t 0. Determine Δnp(t) for t 0. ( 5 points )
① n p (t ) = 2GL 0 n + GL 0 n exp(−t / n ) ② n p (t ) = 2GL 0 n − GL 0 n exp(−t / n )
③ n p (t ) = 3GL 0 n + GL 0 n exp(−t / n ) ④ n p (t ) = 3GL 0 n − GL 0 n exp(−t / n )
⑤ n p (t ) = 3GL 0 n + 2GL 0 n exp(−t / n ) ⑥ n p (t ) = 3GL 0 n − 2GL 0 n exp(−t / n )
⑦ n p (t ) = 4GL 0 n + GL 0 n exp(−t / n ) ⑧ n p (t ) = 4GL 0 n − GL 0 n exp(−t / n )
12. The energy band diagram of a semiconductor sample under equilibrium is shown in figure (a). Figure (b) represents
the steady state conditions with illuminations. The electron concentration increases by the illumination. Choose a
possible quasi-Fermi level for electrons (FN) under low-level-injection. ( 5 points )
Ec FN1 Ec
EF FN2
Ei Ei
FN3
FN4
Ev Ev
(a) (b)
Score:
13. As pictured in the right figure, the x = 0 end of a semi-
infinite bar of silicon with acceptor concentration of NA
= 2×1015/cm3 is kept at 300K and illuminated so as to
create Δnp0 = 1010/cm3 excess electrons at x = 0. The
wavelength of the illumination is such that no light
penetrates into the interior (x > 0) of the bar. The
lifetime of electrons and the minority carrier diffusion
length are τn and LN respectively.
① Determine the electron and hole concentrations when a steady state condition is established. ( 5 points )
ⓐ n = 5×104 + 1010exp(-x/LN) /cm3 , p = 2×1015 /cm3
ⓑ n = 5×104 + 2×1010exp(-x/LN) /cm3 , p = 2×1015 /cm3
ⓒ n = 5×104 + 5×109exp(-x/LN) /cm3 , p = 2×1015 /cm3
ⓓ n = 2×105 + 1010exp(-x/LN) /cm3 , p = 5×1014 /cm3
ⓔ n = 2×105 + 2×1010exp(-x/LN) /cm3 , p = 5×1014 /cm3
ⓕ n = 2×105 + 5×109exp(-x/LN) /cm3 , p = 5×1014 /cm3
② Find the expression of the quasi-Fermi level for electrons, FN as a function of x where Δnp(x) >> n0. ( 5 points )
ⓐ FN = Ei + kT (x/LN)
ⓑ FN = Ei – kT (x/LN)
ⓒ FN = Ei + kT ln(Δnp0) + kT (x/LN)
ⓓ FN = Ei + kT ln(Δnp0) – kT (x/LN)
ⓔ FN = Ei – kT ln(Δnp0) + kT (x/LN)
ⓕ FN = Ei – kT ln(Δnp0) – kT (x/LN)
