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Analog Flow 1

The document outlines an open-source analog design flow for integrated circuits, detailing the steps from schematic design and simulation to layout generation, DRC, LVS, and parasitic extraction. It emphasizes the importance of the Process Design Kit (PDK) which includes specifications for fabrication, device primitives, and simulation models. Additionally, it provides instructions for using the Magic GUI for layout design and scripting commands for efficient design processes.
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0% found this document useful (0 votes)
19 views17 pages

Analog Flow 1

The document outlines an open-source analog design flow for integrated circuits, detailing the steps from schematic design and simulation to layout generation, DRC, LVS, and parasitic extraction. It emphasizes the importance of the Process Design Kit (PDK) which includes specifications for fabrication, device primitives, and simulation models. Additionally, it provides instructions for using the Magic GUI for layout design and scripting commands for efficient design processes.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Layout and LVS

Open-Source Analog Design Flow


Specifications
Design Flow
Schematic Design
& Simulation
for Analog
Integrated
Layout Generation
Circuits
DRC & LVS

Parasitic Extraction
& Simulation

GDS

2
Fabrication and PDK

Process Design Kit:

Set of specifications of the fabrication process,


defined by the foundry. It includes:

● Available layers
● Physical and electrical properties
● Device primitives
● Simulation models
+ Set of rules that ensure manufacturability
of the design (Design Rule Check o DRC)

3
Layout
Since the vertical order of
the layers is known, it is
sufficient to represent the
design seen from above,
like a blueprint.
The shape of the polygons
drawn in the different layers
provide information of the
physical geometry and
distribution of the designed
devices.

4
Layout
Before layout
During schematic design, once
the simulations show the desired
behaviour, the (preliminary) size
of the devices are chosen.

In the following example, we consider the layout of a


CMOS inverter, with lengths L = 0.3 um and widths
Wn = 1.5 um and Wp = 4.5 um.

In the example we use Magic and work with the


iic-osic-tools Docker from JKU.

6
www.opencircuitdesign.com/magic/
Magic: GUI

Grid options DRC check Information:


technology, layer

Selection Box

Layers: left click to make


layer visible, wheel to paint
the box and right click to
Console
make layer invisible

7
Magic: commands left click lower left corner of the box
right click upper right corner of the box
‘a’ select everything in the box
Comandos: ‘b’ box information
‘c’ copy
box <x1> <y1> <x2> <y2> Choose box coordinates ‘d’ delete
paint <layer_name> Paint box ‘s’ select polygon
getcell <cell_name> Instantiate .mag file ‘m’ move
sideways Mirror horizontally ‘u’ undo
upsidedown Mirror vertically shift + ‘u’ redo
rotate [degrees] Rotate (90º by default) ‘z’ zoom in
label <name> <dir> <layer> Put label box shift + ‘z’ zoom out
source <file_name> Run .tcl script
extract Extract devices
ext2spice Convert extraction into .spice Note: all the actions in the GUI can be
save <cell_name> Save .mag file executed with commands, and written in
load <cell_name> Load .mag file .tcl scripts

8
1.0x1.5 ndiffusion 0.3x1.8 polysilicon

¿Which type is
the substrate? [ NMOS Layout
0.05
Execute magic and check technology in
the upper right corner.
¿Where are
Draw the NMOS from the image, size
the transistor W=150nm and L=30nm
terminals?
Rule Value

difftap.1 diffusion min width 0.15um

difftap.3 diff. to diff. min spacing 0.27um

poly.1a polysilicon min width 0.15um

poly.2 poly to poly min spacing 0.21um

poly.7 ndiffusion overhang of nFET 0.25um


[
0.1 difftap.2 Transistor min width 0.42um

poly.8 min poly overhang of FET 0.13um


0.2x1.2 ndcontact
0.3x1.4 locali
9
1. 2.
On the window menu, select a
0.5um grid and enable snap to grid.
Paint a 1.0um*1.5um rectangle
width ndiffusion layer.

Change the grid size to 0.05 and


paint a 0.3um*1.8um rectangle with
polysilicon.
This will generate a 0.3um*1.5um
ntransistor.
3. 4.
Paint a 0.2um*1.2um rectangle with
ndcontact on each side.

Paint a 0.3um*1.4um rectangle with


locali on each side.

Check DRC

10
PMOS Layout Scripting
A PMOS transistor has a similar construction Remembering that all actions can be
to the NMOS, except is is inside an nwell done by commands, .tcl scripts can be
and diffusions are p+ type. The required used to do layout that is easily
layers are: reproduced and changed.
nwell
pdiffusion
polysilicon
pdcontact
locali

For the example inverter we need a PMOS


with W=4.5um y L=0.3um. What about
aspect ratio?

11
Device Generator
It is not necessary to do layout manually for
each device.

12
Layout v/s Schematic
Layout v/s Schematic (LVS)
In Xschem:
- Generate .spice by pressing ‘Netlist’
- Open netlist with ‘Simulation>Edit Netlist’
- Save .spice in work directory

In Magic:
- Extract with: extract
- Configure with: ext2spice lvs
- Configure with: ext2spice subcircuit top off
- Get .spice: ext2spice

Once both netlists are in the same directory, execute netgen

netgen -batch lvs net1.spice net2.spice $PDK_PATH/libs.tech/netgen/sky130A_setup.tcl lvs.log

14
LVS log http://opencircuitdesign.com/netgen/tutorial/tutorial.html#Results

15
Post-Layout Simulation
Parasitic Netlist for LVS

extraction
extract

ext2spice cthresh 0

ext2spice rthresh 0 Netlist with parasitics


ext2spice

17

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