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Experimental Report Electronics

The report details an experiment on the operational characteristics of a diode under reverse bias conditions, where it acts as an insulator until a breakdown voltage is reached. The procedure involved measuring reverse current and voltage with a silicon diode using a power supply and multimeter. Limitations included measurement accuracy, lack of a germanium diode, and a restricted voltage range, which could affect the results.

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0% found this document useful (0 votes)
11 views4 pages

Experimental Report Electronics

The report details an experiment on the operational characteristics of a diode under reverse bias conditions, where it acts as an insulator until a breakdown voltage is reached. The procedure involved measuring reverse current and voltage with a silicon diode using a power supply and multimeter. Limitations included measurement accuracy, lack of a germanium diode, and a restricted voltage range, which could affect the results.

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tsipabafo
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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COURSE: ELECTRICAL AND ELECTRONICS ENGINEERING

MODULE: ELECTRONICS

CODE: NDE 232

NAME: SINENKOSI MAHLALELA

STUDENT ID: 230228004

INSTRUCTOR: MR T.K DLAMINI

[email protected]
79636333
Report on Experiment 1

Reverse Bias Conditions

A diode is a 2 lead semiconductor that acts as a one way gate to electron flow. Diode
allows current to pass in only one direction. When a diode is connected to a battery holes
in the n side are forced to the left while electrons in the p-side are forced to the right. This
results in an empty zone around the pn- junction that is free of charge carries creating a
depletion region. This depletion region acts as an insulator preventing current from
flowing through the diode .When a diode is arranged in this way, itis said to be reverse
biased

Objective

The primary objective of this experiment is to observe and analyze the operational
characteristics of a diode when subjected in reverse-bias condition.
Equipment and Materials

- Diode (silicon diode)


- Power supply
- Multimeter
- Resistors 1 kΩ(for limiting current)
- Breadboard and connecting wires

The procedure involved:

- The circuit was assembled on a breadboard.


- 1 kΩ resistor was used to limit the current flow.
- Setting the power supply to varying reverse voltages from -4V to -10V.
- Measuring the reverse current and voltage across the diode.
- Recording the data systematically.
This is the circuit

Reverse bias diode circuit

Limitations

1. Measurement Accuracy: The accuracy of the measurements could be influenced


by the resolution of the multimeter used. Minor variations in the readings were
noted as the voltages approached the breakdown level.

2. Germanium diode was not provided in the lab.

3. Forward bias experiment was not done due to voltage supplies having a bias of 4V
upwards yet the barrier potential voltage of a diode is 0.7V

4. Material Aging: The diode and the voltage source used in the experiment may have
experienced some aging effects, potentially influencing its current-voltage
characteristics compared to a new diode.

5. Limited Voltage Range: The experiment was limited to a specific range of voltages
from -4V to -17V for reverse bias), which may not demonstrate the complete
characteristics of the diode, particularly near breakdown points.
Reverse-Bias Observations

• In reverse bias, the current through the diode remained minimal (close to zero)
until reaching the breakdown voltage. This illustrates the diode’s non-conductive
state and how it protects circuits from reverse polarity.
• High Dynamic Resistance the diode exhibits a very high resistance in reverse bias
effectively acting as an open circuit.
• It breakdown at High Voltage if the reverse voltage exceeds a certain threshold

Conclusion

In reverse bias, a diode blocks current under normal conditions, acting as an insulator.
However, if the reverse voltage exceeds the breakdown limit, the diode conducts
significantly, which may damage it unless it is designed for breakdown operation (like a
Zener Diode)

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